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    • 7. 发明授权
    • Method to form a device by constructing a support element on a thin semiconductor lamina
    • 通过在薄半导体层上构造支撑元件来形成器件的方法
    • US08173452B1
    • 2012-05-08
    • US12980424
    • 2010-12-29
    • Christopher J. PettiMohamed M. HilaliTheodore SmickVenkatesan MuraliKathy J. JacksonZhiyong LiGopalakrishna Prabhu
    • Christopher J. PettiMohamed M. HilaliTheodore SmickVenkatesan MuraliKathy J. JacksonZhiyong LiGopalakrishna Prabhu
    • H01L21/00
    • H01L31/1892H01L31/0747H01L31/1864Y02E10/50
    • A semiconductor assembly is described in which a support element is constructed on a surface of a semiconductor lamina. Following formation of the thin lamina, which may have a thickness about 50 microns or less, the support element is formed, for example by plating, or by application of a precursor and curing in situ, resulting in a support element which may be, for example, metal, ceramic, polymer, etc. This is in contrast to a rigid or semi-rigid pre-formed support element which is affixed to the lamina following its formation, or to a donor wafer from which the lamina is subsequently cleaved. Fabricating the support element in situ may avoid the use of adhesives to attach the lamina to a permanent support element; such adhesives may be unable to tolerate processing temperatures and conditions required to complete the device. In some embodiments, this process flow allows the lamina to be annealed at high temperature, then to have an amorphous silicon layer formed on each face of the lamina following that anneal. A device may be formed which comprises the lamina, such as a photovoltaic cell.
    • 描述了半导体组件,其中在半导体层的表面上构造支撑元件。 形成厚度约为50微米或更小的薄层之后,例如通过镀覆或通过施加前体和原位固化来形成支撑元件,得到支撑元件,其可以用于 例如,金属,陶瓷,聚合物等。这与刚性或半刚性的预成形支撑元件形成对比,该刚性或半刚性的预成型支撑元件在其形成之后固定到层板上,或者与施加器晶片相接触,其中层板随后被切割。 原位制造支撑元件可以避免使用粘合剂将薄片附着到永久支撑元件上; 这种粘合剂可能不能容忍完成装置所需的加工温度和条件。 在一些实施例中,该工艺流程允许薄层在高温下退火,然后在该退火之后具有在层的每个表面上形成的非晶硅层。 可以形成包括层的器件,例如光伏电池。