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1. 发明授权

US5815226A Electro-optical device and method of fabricating same 失效
公开(公告)号：US5815226A
公开(公告)日：1998-09-29
申请号：US808453
申请日：1997-02-28
申请人： Shunpei Yamazaki , Jun Koyama , Naoaki Yamaguchi , Katunobu Awane , Fumiaki Funada , Yoshitaka Yamamoto
发明人： Shunpei Yamazaki , Jun Koyama , Naoaki Yamaguchi , Katunobu Awane , Fumiaki Funada , Yoshitaka Yamamoto
IPC分类号： G02F1/1362 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , G02F1/1333 , G02F1/1343
CPC分类号： G02F1/136209 , G02F1/136213 , H01L27/1255 , H01L29/66757 , H01L29/78621
摘要： An active matrix liquid crystal display having a high aperture ratio is provided. Retaining capacitors are created between a black matrix and pixel electrodes via a dielectric layer made from an organic resinous material or inorganic material. Those regions of the black matrix which cover TFTs are fully utilized. Therefore, wider area can be used to display an image than heretofore. In the present invention, the difference in relative dielectric constant between different dielectric layers is employed. Therefore, retaining capacitors can be created without the need to take account of parasitic capacitance.

2. 发明授权

US06118506A Electro-optical device and method of fabricating same 有权
标题翻译：电光装置及其制造方法
公开(公告)号：US06118506A
公开(公告)日：2000-09-12
申请号：US161161
申请日：1998-09-25
申请人： Shunpei Yamazaki , Jun Koyama , Naoaki Yamaguchi , Katunobu Awane , Funiaki Funada , Yoshitaka Yamamoto
发明人： Shunpei Yamazaki , Jun Koyama , Naoaki Yamaguchi , Katunobu Awane , Funiaki Funada , Yoshitaka Yamamoto
IPC分类号： G02F1/1362 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , G02F1/1333 , G02F1/1343
CPC分类号： G02F1/136209 , G02F1/136213 , H01L27/1255 , H01L29/66757 , H01L29/78621
摘要： An active matrix liquid crystal display having a high aperture ratio is provided. Retaining capacitors are created between a black matrix and pixel electrodes via a dielectric layer made from an organic resinous material or inorganic material. Those regions of the black matrix which cover TFTs are fully utilized. Therefore, wider area can be used to display an image than heretofore. In the present invention, the difference in relative dielectric constant between different dielectric layers is employed. Therefore, retaining capacitors can be created without the need to take account of parasitic capacitance.
摘要翻译：提供了具有高开口率的有源矩阵液晶显示器。通过由有机树脂材料或无机材料制成的电介质层，在黑矩阵和像素电极之间产生保持电容。覆盖TFT的黑矩阵的那些区域被充分利用。因此，可以使用更宽的面积来显示比迄今为止的图像。在本发明中，采用不同介电层之间的相对介电常数差。因此，可以创建保持电容器，而不需要考虑寄生电容。

3. 发明授权

US5926735A Method of forming semiconductor device 失效
标题翻译：半导体器件形成方法
公开(公告)号：US5926735A
公开(公告)日：1999-07-20
申请号：US802685
申请日：1997-02-19
申请人： Shunpei Yamazaki , Naoaki Yamaguchi , Yuugo Goto , Satoshi Teramoto , Katunobu Awane , Yoshitaka Yamamoto , Toshimasa Hamada
发明人： Shunpei Yamazaki , Naoaki Yamaguchi , Yuugo Goto , Satoshi Teramoto , Katunobu Awane , Yoshitaka Yamamoto , Toshimasa Hamada
IPC分类号： H01L21/28 , H01L21/336 , H01L21/768 , H01L21/77 , H01L21/84 , H01L21/4763
CPC分类号： H01L29/66757 , H01L21/28079 , H01L21/76802 , H01L27/124
摘要： There is disclosed a manufacturing method of highly integrated circuits with thin-film transistors (TFTs) for use as peripheral driver circuitry in active-matrix liquid crystal display (LCD) panel with a pixel array each having a charge transfer control TFT, capable of facilitating formation of contact holes otherwise being difficult in cases where an anode oxide film is formed on gate electrodes of TFTs and lead wires both of which are made of anodizable metal, such as aluminum. The method includes execution of anodization while causing a resist mask to be disposed on part of the lead wire and electrode made of aluminum, thereby partly eliminating formation of the anode oxide film on the lead wire and electrode. At a later step of fabrication, each contact is formed by use of such portion that has no anode oxide film formed thereon. This may allow aluminum to be employed as lead wires while enabling easy fabrication of contacts therefor.
摘要翻译：公开了一种具有薄膜晶体管（TFT）的高度集成电路的制造方法，用作有源矩阵液晶显示器（LCD）面板中的外围驱动电路，每个像素阵列均具有电荷转移控制TFT，能够促进在由诸如铝的阳极氧化金属制成的TFT和引线的栅电极上形成阳极氧化膜的情况下，形成接触孔是困难的。该方法包括执行阳极氧化，同时使抗蚀剂掩模设置在由铝制成的引线和电极的一部分上，从而部分地消除在引线和电极上形成阳极氧化膜。在后面的制造步骤中，通过使用其上没有形成阳极氧化膜的部分形成每个接触。这可以允许使用铝作为引线，同时能够容易地制造用于其的触点。

4. 发明授权

US07675060B2 Semiconductor device and method for producing it 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07675060B2
公开(公告)日：2010-03-09
申请号：US11705710
申请日：2007-02-14
申请人： Shunpei Yamazaki , Naoaki Yamaguchi , Setsuo Nakajima
发明人： Shunpei Yamazaki , Naoaki Yamaguchi , Setsuo Nakajima
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L27/12 , H01L27/124 , H01L27/1277 , H01L27/14609 , H01L29/42384 , H01L29/4908 , H01L29/66765
摘要： Disclosed is a technique of improving the heat resistance of the aluminum gate electrode in bottom-gate-type TFT of which the active layer is made of a crystalline silicon film. A pattern of a laminate of a titanium film 102 and an aluminum film 103 is formed on a glass substrate 101. The pattern is to give a gate electrode 100. Then, the titanium film 102 is side-etched. Next, the layered substrate is heated to thereby intentionally form hillocks and whiskers on the surface of the aluminum pattern 103. Next, the aluminum pattern 103 acting as an anode is subjected to anodic oxidation to form an oxide film 105 thereon. The anodic oxidation extends to the lower edge of the aluminum pattern 103, at which the titanium layer was side-etched. Next, a gate-insulating film 106 and an amorphous silicon film are formed. A mask is formed over the pattern, which is to give the gate electrode, and then a nickel acetate solution is applied to the layered structure. Thus, nickel is kept in contact with the surface of the structure. Next, this is heated to induce crystal growth in the silicon film from the region contacted with nickel to the masked region. In the bottom-gate-type TFT thus produced, the active layer is made of a crystalline silicon film. In this process, since the anodic oxide film is formed as in FIG. 1(C), aluminum does neither melt to flow away nor diffuse away. Thus, the heat resistance of the aluminum electrode formed is improved.
摘要翻译：公开了一种提高活性层由结晶硅膜制成的底栅型TFT中的铝栅电极的耐热性的技术。在玻璃基板101上形成钛膜102和铝膜103的叠层图案。图案是给予栅电极100.然后，对钛膜102进行侧蚀刻。接下来，加热层叠基板，从而有意地在铝图案103的表面上形成小丘和晶须。接下来，将用作阳极的铝图案103进行阳极氧化以在其上形成氧化膜105。阳极氧化延伸到铝图案103的下边缘，钛层被侧蚀刻。接下来，形成栅极绝缘膜106和非晶硅膜。在图案上形成掩模，得到栅电极，然后将乙酸镍溶液施加到层状结构。因此，镍与结构的表面保持接触。接下来，将其加热以在与镍接触的区域中的硅膜中引起晶体生长至掩蔽区域。在如此制造的底栅型TFT中，有源层由结晶硅膜制成。在该方法中，由于阳极氧化膜如图1所示那样形成。如图1（C）所示，铝既不熔化，也不会流失。因此，形成的铝电极的耐热性得到改善。

5. 发明授权

US06501094B1 Semiconductor device comprising a bottom gate type thin film transistor 失效
标题翻译：半导体器件包括底栅型薄膜晶体管
公开(公告)号：US06501094B1
公开(公告)日：2002-12-31
申请号：US09095026
申请日：1998-06-09
申请人： Shunpei Yamazaki , Naoaki Yamaguchi , Setsuo Nakajima
发明人： Shunpei Yamazaki , Naoaki Yamaguchi , Setsuo Nakajima
IPC分类号： H01L2904
CPC分类号： H01L27/12 , H01L27/124 , H01L27/1277 , H01L27/14609 , H01L29/42384 , H01L29/4908 , H01L29/66765
摘要： A semiconductor device includes a bottom gate type thin film transistor, wherein the bottom gate type thin film transistor is characterized in that a gate electrode is composed of a first layer comprising titanium and a second layer comprising aluminum formed on the first layer.
摘要翻译：半导体器件包括底栅型薄膜晶体管，其中底栅型薄膜晶体管的特征在于，栅电极由形成在第一层上的由钛构成的第一层和包含铝的第二层构成。

6. 发明授权

US07192817B2 Method for manufacturing a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07192817B2
公开(公告)日：2007-03-20
申请号：US10917359
申请日：2004-08-13
申请人： Shunpei Yamazaki , Naoaki Yamaguchi , Setsuo Nakajima
发明人： Shunpei Yamazaki , Naoaki Yamaguchi , Setsuo Nakajima
IPC分类号： H01L21/84
CPC分类号： H01L27/12 , H01L27/124 , H01L27/1277 , H01L27/14609 , H01L29/42384 , H01L29/4908 , H01L29/66765
摘要： A method for manufacturing a semiconductor device including forming a gate electrode over a substrate; forming a pate insulating film over the pate electrode and over the substrate; forming a semiconductor film on the gate insulating film; providing the semiconductor film with a metal element; crystallizing the semiconductor film provided with the metal element; doping an element which is used for gettering into a portion of the crystallized semiconductor film; and heating the crystallized semiconductor film whereby the metal element contained in a channel region of the semiconductor film is gettered by the portion.
摘要翻译：一种制造半导体器件的方法，包括在衬底上形成栅电极; 在头部电极上方和基板上形成一个头部绝缘膜; 在栅极绝缘膜上形成半导体膜; 为半导体膜提供金属元素; 使设置有金属元件的半导体膜结晶化; 掺杂用于吸收到结晶半导体膜的一部分中的元素; 并加热结晶的半导体膜，由此包含在半导体膜的通道区域中的金属元素被该部分吸收。

7. 发明申请

US20070138468A1 Semiconductor device and method for producing it 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070138468A1
公开(公告)日：2007-06-21
申请号：US11705710
申请日：2007-02-14
申请人： Shunpei Yamazaki , Naoaki Yamaguchi , Setsuo Nakajima
发明人： Shunpei Yamazaki , Naoaki Yamaguchi , Setsuo Nakajima
IPC分类号： H01L31/00
CPC分类号： H01L27/12 , H01L27/124 , H01L27/1277 , H01L27/14609 , H01L29/42384 , H01L29/4908 , H01L29/66765
摘要： Disclosed is a technique of improving the heat resistance of the aluminum gate electrode in bottom-gate-type TFT of which the active layer is made of a crystalline silicon film. A pattern of a laminate of a titanium film 102 and an aluminum film 103 is formed on a glass substrate 101. The pattern is to give a gate electrode 100. Then, the titanium film 102 is side-etched. Next, the layered substrate is heated to thereby intentionally form hillocks and whiskers on the surface of the aluminum pattern 103. Next, the aluminum pattern 103 acting as an anode is subjected to anodic oxidation to form an oxide film 105 thereon. The anodic oxidation extends to the lower edge of the aluminum pattern 103, at which the titanium layer was side-etched. Next, a gate-insulating film 106 and an amorphous silicon film are formed. A mask is formed over the pattern, which is to give the gate electrode, and then a nickel acetate solution is applied to the layered structure. Thus, nickel is kept in contact with the surface of the structure. Next, this is heated to induce crystal growth in the silicon film from the region contacted with nickel to the masked region. In the bottom-gate-type TFT thus produced, the active layer is made of a crystalline silicon film. In this process, since the anodic oxide film is formed as in FIG. 1(C), aluminum does neither melt to flow away nor diffuse away. Thus, the heat resistance of the aluminum electrode formed is improved.
摘要翻译：公开了一种提高活性层由结晶硅膜制成的底栅型TFT中的铝栅电极的耐热性的技术。在玻璃基板101上形成钛膜102和铝膜103的叠层图案。图案是给予栅电极100.然后，对钛膜102进行侧蚀刻。接下来，加热层叠基板，从而有意地在铝图案103的表面上形成小丘和晶须。接下来，将用作阳极的铝图案103进行阳极氧化以在其上形成氧化膜105。阳极氧化延伸到铝图案103的下边缘，钛层被侧蚀刻。接下来，形成栅极绝缘膜106和非晶硅膜。在图案上形成掩模，得到栅电极，然后将乙酸镍溶液施加到层状结构。因此，镍与结构的表面保持接触。接下来，将其加热以在与镍接触的区域中的硅膜中引起晶体生长至掩蔽区域。在如此制造的底栅型TFT中，有源层由结晶硅膜制成。在该方法中，由于阳极氧化膜如图1所示那样形成。如图1（C）所示，铝既不熔化，也不会流失。因此，形成的铝电极的耐热性得到改善。

8. 发明申请

US20050012096A1 Semiconductor device and method for producing it 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050012096A1
公开(公告)日：2005-01-20
申请号：US10917359
申请日：2004-08-13
申请人： Shunpei Yamazaki , Naoaki Yamaguchi , Setsuo Nakajima
发明人： Shunpei Yamazaki , Naoaki Yamaguchi , Setsuo Nakajima
IPC分类号： H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/423 , H01L29/49 , H01L29/04
CPC分类号： H01L27/12 , H01L27/124 , H01L27/1277 , H01L27/14609 , H01L29/42384 , H01L29/4908 , H01L29/66765
摘要： Disclosed is a technique of improving the heat resistance of the aluminum gate electrode in bottom-gate-type TFT of which the active layer is made of a crystalline silicon film. A pattern of a laminate of a titanium film 102 and an aluminum film 103 is formed on a glass substrate 101. The pattern is to give a gate electrode 100. Then, the titanium film 102 is side-etched. Next, the layered substrate is heated to thereby intentionally form hillocks and whiskers-on the surface of the aluminum pattern 103. Next, the aluminum pattern 103 acting as an anode is subjected to anodic oxidation to form an oxide film 105 thereon. The anodic oxidation extends to the lower edge of the aluminum pattern 103, at which the titanium layer was side-etched. Next, a gate-insulating film 106 and an amorphous silicon film are formed. A mask is formed over the pattern, which is to give -the gate electrode, and then a nickel acetate solution is applied to the layered structure. Thus, nickel is kept in contact with the surface of the structure. Next, this is heated to induce crystal growth in the silicon film from the region contacted with nickel to the masked region. In the bottom-gate-type TFT thus produced, the active layer is made of a crystalline silicon film. In this process, since the anodic oxide film is formed as in FIG. 1(C), aluminum does neither melt to flow away nor diffuse away. Thus, the heat resistance of the aluminum electrode formed is improved.
摘要翻译：公开了一种提高活性层由结晶硅膜制成的底栅型TFT中的铝栅电极的耐热性的技术。在玻璃基板101上形成钛膜102和铝膜103的叠层图案。图案是给予栅电极100.然后，对钛膜102进行侧蚀刻。接着，在铝图案103的表面上，层叠基板被加热，从而有意地形成小丘和晶须。接着，将作为阳极的铝图案103进行阳极氧化，在其上形成氧化膜105。阳极氧化延伸到铝图案103的下边缘，钛层被侧蚀刻。接下来，形成栅极绝缘膜106和非晶硅膜。在图案上形成掩模，该掩模将产生栅电极，然后将乙酸镍溶液施加到层状结构。因此，镍与结构的表面保持接触。接下来，将其加热以在与镍接触的区域中的硅膜中引起晶体生长至掩蔽区域。在如此制造的底栅型TFT中，有源层由结晶硅膜制成。在该方法中，由于阳极氧化膜如图1所示那样形成。如图1（C）所示，铝既不熔化，也不会流失。因此，形成的铝电极的耐热性得到改善。

9. 发明授权

US06791111B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06791111B2
公开(公告)日：2004-09-14
申请号：US10323772
申请日：2002-12-20
申请人： Shunpei Yamazaki , Naoaki Yamaguchi , Setsuo Nakajima
发明人： Shunpei Yamazaki , Naoaki Yamaguchi , Setsuo Nakajima
IPC分类号： H01L2904
CPC分类号： H01L27/12 , H01L27/124 , H01L27/1277 , H01L27/14609 , H01L29/42384 , H01L29/4908 , H01L29/66765
摘要： The present invention relates to a display device. In particular, the display device of the present invention has a gate electrode over a substrate, the gate electrode has a lamination of a first conductive layer over the substrate and a second conductive layer on the first conductive layer; a semiconductor layer over the gate electrode with a gate insulating film interposed between; an insulating film in contact with a portion of the semiconductor layer; and at least one of source and drain electrodes formed in contact with a portion of the insulating film, where the first conductive layer does not have a tapered cross section, and the second conductive layer has a tapered cross section.
摘要翻译：本发明涉及一种显示装置。特别地，本发明的显示装置在基板上具有栅电极，栅电极具有在基板上的第一导电层和第一导电层上的第二导电层的叠层; 位于栅极电极上的半导体层，其间插入有栅极绝缘膜; 与所述半导体层的一部分接触的绝缘膜; 以及形成为与所述绝缘膜的一部分接触的源电极和漏电极中的至少一个，其中所述第一导电层不具有锥形横截面，并且所述第二导电层具有锥形横截面。

10. 发明申请

US20090289254A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090289254A1
公开(公告)日：2009-11-26
申请号：US12534382
申请日：2009-08-03
申请人： Toshimitsu Konuma , Akira Sugawara , Yukiko Uehara , Hongyong Zhang , Atsunori Suzuki , Hideto Ohnuma , Naoaki Yamaguchi , Hideomi Suzawa , Hideki Uochi , Yasuhiko Takemura
发明人： Toshimitsu Konuma , Akira Sugawara , Yukiko Uehara , Hongyong Zhang , Atsunori Suzuki , Hideto Ohnuma , Naoaki Yamaguchi , Hideomi Suzawa , Hideki Uochi , Yasuhiko Takemura
IPC分类号： H01L29/786 , H01L29/04 , H01L27/12
CPC分类号： H01L29/665 , H01L21/02145 , H01L21/02244 , H01L21/02258 , H01L21/31116 , H01L21/31144 , H01L21/31683 , H01L21/31687 , H01L21/321 , H01L27/124 , H01L27/127 , H01L29/458 , H01L29/66598 , H01L29/66757 , H01L29/78621 , H01L29/78627
摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.
摘要翻译：形成在绝缘基板源极，漏极和沟道区上的TFT，至少形成在沟道区上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。在沟道区域和漏极区域之间，提供具有较高电阻率的区域以便减小偏转电流。形成该结构的方法包括以下步骤：在栅电极侧阳极氧化栅电极以形成多孔阳极氧化膜; 使用多孔阳极氧化膜去除一部分栅极绝缘体作为掩模，使得栅极绝缘膜延伸超过栅极电极但不完全覆盖源极和漏极区域。此后，进行一个导电性元素的离子掺杂。高电阻率区域限定在栅极绝缘膜下。

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