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1. 发明授权

US07691692B2 Substrate processing apparatus and a manufacturing method of a thin film semiconductor device 失效
标题翻译：基板处理装置及薄膜半导体装置的制造方法
公开(公告)号：US07691692B2
公开(公告)日：2010-04-06
申请号：US12232433
申请日：2008-09-17
申请人： Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
发明人： Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , C23C16/303 , C23C16/345 , C23C16/402 , C23C16/54 , H01L21/02422 , H01L21/02532 , H01L21/2022 , H01L21/67155 , H01L21/67207 , H01L27/1281 , H01L29/41733 , Y10S438/905 , Y10S438/908
摘要： A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.
摘要翻译：基板处理装置包括经由可抽出的公共室彼此连接的多个可抽出的处理室，公共室设有用于在每个处理室之间输送基板的装置。更具体地，基板处理装置包括多个可排除的处理室，至少一个所述处理室通过其中的气相反应具有成膜功能，所述处理室中的至少一个具有光照射的退火功能，所述处理室中的至少一个具有加热功能。所述设备还具有公共室，所述多个可抽出的处理室通过所述公共室彼此连接，以及设置在所述公共室中的输送装置，用于在每个处理室之间输送基板。

2. 发明申请

US20090029509A1 Substrate processing apparatus and method and a manufacturing method of a thin film semiconductor device 失效
公开(公告)号：US20090029509A1
公开(公告)日：2009-01-29
申请号：US12232433
申请日：2008-09-17
申请人： Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
发明人： Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
IPC分类号： H01L21/336
CPC分类号： H01L21/02686 , C23C16/303 , C23C16/345 , C23C16/402 , C23C16/54 , H01L21/02422 , H01L21/02532 , H01L21/2022 , H01L21/67155 , H01L21/67207 , H01L27/1281 , H01L29/41733 , Y10S438/905 , Y10S438/908
摘要： A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.

3. 发明授权

US07271082B2 Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07271082B2
公开(公告)日：2007-09-18
申请号：US10164019
申请日：2002-06-07
申请人： Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
发明人： Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
IPC分类号： H01L21/20
CPC分类号： H01L21/02686 , C23C16/303 , C23C16/345 , C23C16/402 , C23C16/54 , H01L21/02422 , H01L21/02532 , H01L21/2022 , H01L21/67155 , H01L21/67207 , H01L27/1281 , H01L29/41733 , Y10S438/905 , Y10S438/908
摘要： A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.
摘要翻译：基板处理装置包括经由可抽出的公共室彼此连接的多个可抽出的处理室，公共室设有用于在每个处理室之间输送基板的装置。更具体地，基板处理装置包括多个可排除的处理室，至少一个所述处理室通过其中的气相反应具有成膜功能，所述处理室中的至少一个具有光照射的退火功能，所述处理室中的至少一个具有加热功能。所述设备还具有公共室，所述多个可抽出的处理室通过所述公共室彼此连接，以及设置在所述公共室中的输送装置，用于在每个处理室之间输送基板。

4. 发明授权

US08304350B2 Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US08304350B2
公开(公告)日：2012-11-06
申请号：US12705004
申请日：2010-02-12
申请人： Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
发明人： Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
IPC分类号： H01L21/461
CPC分类号： H01L21/02686 , C23C16/303 , C23C16/345 , C23C16/402 , C23C16/54 , H01L21/02422 , H01L21/02532 , H01L21/2022 , H01L21/67155 , H01L21/67207 , H01L27/1281 , H01L29/41733 , Y10S438/905 , Y10S438/908
摘要： A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.
摘要翻译：基板处理装置包括经由可抽出的公共室彼此连接的多个可抽出的处理室，公共室设有用于在每个处理室之间输送基板的装置。更具体地，基板处理装置包括多个可排除的处理室，至少一个所述处理室通过其中的气相反应具有成膜功能，所述处理室中的至少一个具有光照射的退火功能，所述处理室中的至少一个具有加热功能。所述设备还具有公共室，所述多个可抽出的处理室通过所述公共室彼此连接，以及设置在所述公共室中的输送装置，用于在每个处理室之间输送基板。

5. 发明授权

US07452794B2 Manufacturing method of a thin film semiconductor device 失效
标题翻译：薄膜半导体器件的制造方法
公开(公告)号：US07452794B2
公开(公告)日：2008-11-18
申请号：US11727257
申请日：2007-03-26
申请人： Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
发明人： Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , C23C16/303 , C23C16/345 , C23C16/402 , C23C16/54 , H01L21/02422 , H01L21/02532 , H01L21/2022 , H01L21/67155 , H01L21/67207 , H01L27/1281 , H01L29/41733 , Y10S438/905 , Y10S438/908
摘要： A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.
摘要翻译：基板处理装置包括经由可抽出的公共室彼此连接的多个可抽出的处理室，公共室设有用于在每个处理室之间输送基板的装置。更具体地，基板处理装置包括多个可排除的处理室，至少一个所述处理室通过其中的气相反应具有成膜功能，所述处理室中的至少一个具有光照射的退火功能，所述处理室中的至少一个具有加热功能。所述设备还具有公共室，所述多个可抽出的处理室通过所述公共室彼此连接，以及设置在所述公共室中的输送装置，用于在每个处理室之间输送基板。

6. 发明授权

US06482752B1 Substrate processing apparatus and method and a manufacturing method of a thin film semiconductor device 失效
标题翻译：基板处理装置及方法以及薄膜半导体装置的制造方法
公开(公告)号：US06482752B1
公开(公告)日：2002-11-19
申请号：US08685788
申请日：1996-07-24
申请人： Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
发明人： Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
IPC分类号： H01L21461
CPC分类号： H01L21/02686 , C23C16/303 , C23C16/345 , C23C16/402 , C23C16/54 , H01L21/02422 , H01L21/02532 , H01L21/2022 , H01L21/67155 , H01L21/67207 , H01L27/1281 , H01L29/41733 , Y10S438/905 , Y10S438/908
摘要： A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.
摘要翻译：基板处理装置包括经由可抽出的公共室彼此连接的多个可抽出的处理室，公共室设有用于在每个处理室之间输送基板的装置。更具体地，基板处理装置包括多个可排除的处理室，至少一个所述处理室通过其中的气相反应具有成膜功能，所述处理室中的至少一个具有光照射的退火功能，所述处理室中的至少一个具有加热功能。所述设备还具有公共室，所述多个可抽出的处理室通过所述公共室彼此连接，以及设置在所述公共室中的输送装置，用于在每个处理室之间输送基板。

7. 发明申请

US20070173046A1 Substrate processing apparatus and method and a manufacturing method of a thin film semiconductor device 失效
标题翻译：基板处理装置及方法以及薄膜半导体装置的制造方法
公开(公告)号：US20070173046A1
公开(公告)日：2007-07-26
申请号：US11727257
申请日：2007-03-26
申请人： Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
发明人： Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
IPC分类号： H01L21/20
CPC分类号： H01L21/02686 , C23C16/303 , C23C16/345 , C23C16/402 , C23C16/54 , H01L21/02422 , H01L21/02532 , H01L21/2022 , H01L21/67155 , H01L21/67207 , H01L27/1281 , H01L29/41733 , Y10S438/905 , Y10S438/908
摘要： A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.
摘要翻译：基板处理装置包括经由可抽出的公共室彼此连接的多个可抽出的处理室，公共室设有用于在每个处理室之间输送基板的装置。更具体地，基板处理装置包括多个可排除的处理室，至少一个所述处理室通过其中的气相反应具有成膜功能，所述处理室中的至少一个具有光照射的退火功能，所述处理室中的至少一个具有加热功能。所述设备还具有公共室，所述多个可抽出的处理室通过所述公共室彼此连接，以及设置在所述公共室中的输送装置，用于在每个处理室之间输送基板。

8. 发明授权

US06635589B2 Methods of heat treatment and heat treatment apparatus for silicon oxide films 失效
标题翻译：氧化硅膜的热处理和热处理装置的方法
公开(公告)号：US06635589B2
公开(公告)日：2003-10-21
申请号：US09286999
申请日：1999-04-07
申请人： Shunpei Yamazaki , Yasuhiko Takemura , Mitsunori Sakama , Tomohiko Sato , Satoshi Teramoto , Shigefumi Sakai
发明人： Shunpei Yamazaki , Yasuhiko Takemura , Mitsunori Sakama , Tomohiko Sato , Satoshi Teramoto , Shigefumi Sakai
IPC分类号： H01L2142
CPC分类号： H01L21/28158 , C23C14/58 , C23C16/56 , H01L29/66757 , Y10S438/909 , Y10S438/91 , Y10S438/958
摘要： Silicon oxide films which are good as gate insulation films are formed by subjecting a silicon oxide film which has been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700° C. in a dinitrogen monoxide atmosphere, or in an NH3 or N2H4 atmosphere, while irradiating with ultraviolet light, reducing the hydrogen and carbon contents in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular. Furthermore, silicon oxide films which are good as gate insulating films have been formed by subjecting silicon oxide films which have been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700° C. in an N2O atmosphere (or hydrogen nitride atmosphere) while irradiating with ultraviolet light, and then carrying out a heat treatment at 300-700° C. in a hydrogen nitride atmosphere (N2O atmosphere), and reducing the amount of hydrogen and carbon in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular.
摘要翻译：作为栅极绝缘膜良好的氧化硅膜通过在300-700℃下通过PVD法或CVD法对形成在包含硅膜的有源层上的氧化硅膜进行热处理而形成。在一氧化二氮气氛中，或在NH 3或N 2 H 4气氛中，同时用紫外线照射，降低氧化硅膜中的氢和碳含量，并将氮引入与硅膜的边界。此外，作为栅极绝缘膜良好的氧化硅膜已经通过利用PVD法或CVD法在由硅膜的活性层上形成的氧化硅膜在300-700°的温度下进行热处理而形成在氮氧化物气氛（N 2 O气氛）中在N2O气氛（或氮化氢气氛）中照射紫外线，然后在300-700℃下进行热处理，并减少氢和碳的量在氧化硅膜中，特别是将氮引入与硅膜的边界。

9. 发明授权

US5970384A Methods of heat treating silicon oxide films by irradiating ultra-violet light 失效
标题翻译：用紫外光照射氧化硅膜的方法
公开(公告)号：US5970384A
公开(公告)日：1999-10-19
申请号：US510288
申请日：1995-08-02
申请人： Shunpei Yamazaki , Yasuhiko Takemura , Mitsunori Sakama , Tomohiko Sato , Satoshi Teramoto , Shigefumi Sakai
发明人： Shunpei Yamazaki , Yasuhiko Takemura , Mitsunori Sakama , Tomohiko Sato , Satoshi Teramoto , Shigefumi Sakai
IPC分类号： H01L21/316 , C23C14/58 , C23C16/56 , H01L21/28 , H01L21/336 , H01L21/8234
CPC分类号： H01L21/28158 , C23C14/58 , C23C16/56 , H01L29/66757 , Y10S438/909 , Y10S438/91 , Y10S438/958
摘要： Silicon oxide films which are good as gate insulation films are formed by subjecting a silicon oxide film which has been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700.degree. C. in a dinitrogen monoxide atmosphere, or in an NH.sub.3 or N.sub.2 H.sub.4 atmosphere, while irradiating with ultraviolet light, reducing the hydrogen and carbon contents in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular. Furthermore, silicon oxide films which are good as gate insulating films have been formed by subjecting silicon oxide films which have been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700.degree. C. in an N.sub.2 O atmosphere (or hydrogen nitride atmosphere) while irradiating with ultraviolet light, and then carrying out a heat treatment at 300-700.degree. C. in a hydrogen nitride atmosphere (N.sub.2 O atmosphere), and reducing the amount of hydrogen and carbon in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular.
摘要翻译：作为栅极绝缘膜良好的氧化硅膜通过在300-700℃下通过PVD法或CVD法将形成在包含硅膜的有源层上的氧化硅膜进行热处理而形成。在一氧化二氮气氛中，或在NH 3或N 2 H 4气氛中，同时用紫外线照射，降低氧化硅膜中的氢和碳含量，并将氮引入与硅膜的边界。此外，作为栅极绝缘膜良好的氧化硅膜已经通过利用PVD法或CVD法在包含硅膜的有源层上形成的氧化硅膜在300-700℃下进行热处理而形成在氮氧化物气氛（或氮气氛围）中，用紫外线照射，然后在氮气气氛（N2O氛围）中在300-700℃下进行热处理，并减少氢和碳的量在氧化硅膜中，特别是将氮引入与硅膜的边界。

10. 发明授权

US08278195B2 Plasma CVD apparatus 有权
标题翻译：等离子体CVD装置
公开(公告)号：US08278195B2
公开(公告)日：2012-10-02
申请号：US13287597
申请日：2011-11-02
申请人： Shunpei Yamazaki , Toru Takayama , Mitsunori Sakama , Hisashi Abe , Hiroshi Uehara , Mika Ishiwata
发明人： Shunpei Yamazaki , Toru Takayama , Mitsunori Sakama , Hisashi Abe , Hiroshi Uehara , Mika Ishiwata
IPC分类号： H01L21/469
CPC分类号： H01J37/32477 , C23C16/4401 , C23C16/5096 , Y10S438/905
摘要： In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber 104 with a power source 113, a vacuum exhausting means 118, and a reaction gas introduction pipe 114, plasma 115 is generated in a space surrounded by an electrode 111, a substrate holder 112, and an insulator 120.
摘要翻译：在等离子体CVD装置中，防止了不必要的放电，例如电弧放电，由于附着在反应室上的膜的剥离引起的颗粒的量减少，并且在该设备的工作时间内有助于生产的时间的百分比增加同时保持设备的扩大和易于加工的性能。等离子体CVD装置被构造成使得在具有电源113，真空排气装置118和反应气体引入管114的导电反应室104中，在由电极111围绕的空间中产生等离子体115，衬底保持器 112和绝缘体120。

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