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1. 发明申请

US20110030783A1 PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20110030783A1
公开(公告)日：2011-02-10
申请号：US12848357
申请日：2010-08-02
申请人： Shunpei YAMAZAKI , Yasuyuki ARAI , Satohiro OKAMOTO
发明人： Shunpei YAMAZAKI , Yasuyuki ARAI , Satohiro OKAMOTO
IPC分类号： H01L31/036 , H01L31/042 , H01L31/18
CPC分类号： H01L31/035209 , H01L31/03682 , H01L31/03685 , H01L31/03762 , H01L31/075 , H01L31/076 , Y02E10/545 , Y02E10/546 , Y02E10/548
摘要： To provide a photoelectric conversion device whose characteristics are sufficiently improved. The photoelectric conversion device includes: a first electrode; a unit cell having a semiconductor layer exhibiting a first conductivity type, a semiconductor layer having an effect of photoelectric conversion, and a semiconductor layer exhibiting a second conductivity type; and a second electrode. In the semiconductor layer having an effect of photoelectric conversion, crystal grains each grain diameter of which is smaller than a thickness of the semiconductor layer having an effect of photoelectric conversion are aligned in the thickness direction of the semiconductor layer having an effect of photoelectric conversion from the semiconductor layer exhibiting the first conductivity type to the semiconductor layer exhibiting the second conductivity type.
摘要翻译：提供其特性得到充分改善的光电转换装置。光电转换装置包括：第一电极; 具有表现出第一导电类型的半导体层的单元电池，具有光电转换效果的半导体层和表现出第二导电类型的半导体层; 和第二电极。在具有光电转换效果的半导体层中，其粒径小于具有光电转换效果的半导体层的厚度的晶粒在具有光电转换效果的半导体层的厚度方向上排列对具有第二导电类型的半导体层表现出第一导电类型的半导体层。

2. 发明申请

US20100307558A1 PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20100307558A1
公开(公告)日：2010-12-09
申请号：US12793294
申请日：2010-06-03
申请人： Shunpei YAMAZAKI , Satohiro OKAMOTO , Kazuo NISHI
发明人： Shunpei YAMAZAKI , Satohiro OKAMOTO , Kazuo NISHI
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L31/028 , H01L31/03682 , H01L31/03685 , H01L31/03762 , H01L31/076 , Y02E10/545 , Y02E10/546 , Y02E10/547 , Y02E10/548 , Y02E10/549 , Y02P70/521
摘要： To provide a multi junction photoelectric conversion device which can be manufactured using a simple method. The photoelectric conversion device includes a first cell provided with a photoelectric conversion function, a second cell provided with a photoelectric conversion function, and a structure body having a function of fixing the first cell and the second cell to each other and electrically connecting the first cell and the second cell to each other. A multi junction photoelectric conversion device in which sufficient conductivity between p-i-n junctions is provided and semiconductor junctions are connected in series can be provided. With this structure, it is possible to obtain sufficient electromotive force.
摘要翻译：提供可以使用简单方法制造的多结光电转换装置。光电转换装置包括具有光电转换功能的第一单元，具有光电转换功能的第二单元和具有将第一单元和第二单元彼此固定并将第一单元电连接的功能的结构体和第二个单元。可以提供其中提供p-i-n结之间的足够导电性并且半导体结串联连接的多结光电转换装置。利用这种结构，可以获得足够的电动势。

3. 发明申请

US20110193081A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110193081A1
公开(公告)日：2011-08-11
申请号：US13018879
申请日：2011-02-01
申请人： Hiromichi GODO , Yasuyuki ARAI , Satohiro OKAMOTO , Mari TERASHIMA , Eriko NISHIDA , Junpei SUGAO
发明人： Hiromichi GODO , Yasuyuki ARAI , Satohiro OKAMOTO , Mari TERASHIMA , Eriko NISHIDA , Junpei SUGAO
IPC分类号： H01L29/78
CPC分类号： H01L29/7869
摘要： An object is to provide a semiconductor device including an oxide semiconductor in which miniaturization is achieved while favorable characteristics are maintained. The semiconductor includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer, a gate insulating layer provided between the oxide semiconductor layer and the gate electrode, and an insulating layer provided in contact with the oxide semiconductor layer. A side surface of the oxide semiconductor layer is in contact with the source electrode or the drain electrode. An upper surface of the oxide semiconductor layer overlaps with the source electrode or the drain electrode with the insulating layer interposed between the oxide semiconductor layer and the source electrode or the drain electrode.
摘要翻译：本发明的目的是提供一种包括氧化物半导体的半导体器件，其中实现了小型化，同时保持了有利的特性。半导体包括与氧化物半导体层接触的氧化物半导体层，源电极和漏电极，与氧化物半导体层重叠的栅电极，设置在氧化物半导体层和栅电极之间的栅极绝缘层，以及绝缘层设置成与氧化物半导体层接触。氧化物半导体层的侧表面与源电极或漏电极接触。氧化物半导体层的上表面与源电极或漏电极重叠，绝缘层介于氧化物半导体层与源电极或漏电极之间。

4. 发明申请

US20110030901A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR SUBSTRATE MANUFACTURING APPARATUS 审中-公开
标题翻译：制造半导体基板和半导体基板制造装置的方法
公开(公告)号：US20110030901A1
公开(公告)日：2011-02-10
申请号：US12903527
申请日：2010-10-13
申请人： Akihisa SHIMOMURA , Masaki KOYAMA , Satohiro OKAMOTO
发明人： Akihisa SHIMOMURA , Masaki KOYAMA , Satohiro OKAMOTO
IPC分类号： B32B37/10
CPC分类号： H01L21/76254
摘要： An object is to provide a uniform semiconductor substrate in which defective bonding is reduced. A further object is to manufacture the semiconductor substrate with a high yield. A first substrate and a second substrate are bonded in a reduced-pressure atmosphere by placing the first substrate at a certain region surrounded by an airtight holding mechanism provided over a support to surround the certain region of a surface of the support; placing the second substrate so as to come to be in contact with the airtight holding mechanism to ensure airtightness of a space surrounded by the support, the airtight holding mechanism, and the second substrate; evacuating the space whose airtightness is secured, thereby reducing an pressure in the space; disposing the second substrate in close contact with the first substrate using difference between the pressure in the space and outside atmospheric pressure; and performing heat treatment.
摘要翻译：目的在于提供一种均匀的半导体衬底，其中不良接合被降低。另一个目的是以高产率制造半导体衬底。第一基板和第二基板通过将第一基板放置在由设置在支撑件上的气密保持机构包围的特定区域上而在减压气氛中接合，以围绕支撑体的表面的特定区域; 将第二基板放置成与气密保持机构接触，以确保由支撑体，气密保持机构和第二基板包围的空间的气密性; 疏散其气密性的空间，从而减小空间中的压力; 使用所述空间中的压力和外部大气压之间的差异将所述第二基板设置为与所述第一基板紧密接触; 并进行热处理。

5. 发明申请

US20100044713A1 LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC DEVICE PROVIDED WITH THE SAME 有权
标题翻译：液晶显示器件及其相应的电子器件
公开(公告)号：US20100044713A1
公开(公告)日：2010-02-25
申请号：US12608266
申请日：2009-10-29
申请人： Atsushi MIYAGUCHI , Satohiro OKAMOTO
发明人： Atsushi MIYAGUCHI , Satohiro OKAMOTO
IPC分类号： H01L29/04
CPC分类号： G02F1/13624 , G02F1/134363 , G02F1/1368 , G02F2001/134318 , H01L27/124 , H01L29/04 , H01L29/41733 , H01L29/66765
摘要： A liquid crystal display device provided with a thin film transistor with excellent electrical characteristics and reduced off current, for which increase in manufacturing costs can be suppressed while suppressing reduction in yield. A thin film transistor includes a gate electrode provided over a substrate; a gate insulating film provided to cover the substrate and the gate electrode; a first island-shaped semiconductor layer and a second island-shaped semiconductor layer each formed as a stack of a microcrystalline semiconductor layer and a buffer layer with a depression on an upper surface thereof, over the gate electrode with the gate insulating film interposed therebetween; a conductive semiconductor layer; and a conductive layer provided on the conductive semiconductor layer. The conductive semiconductor layer is provided between the first island-shaped semiconductor layer and the second island-shaped semiconductor layer in contact with the gate insulating film.
摘要翻译：具有薄膜晶体管的液晶显示装置，其具有优异的电特性和减小的截止电流，从而可以抑制成品率的降低，从而可以抑制制造成本的增加。薄膜晶体管包括设置在衬底上的栅电极; 设置为覆盖基板和栅电极的栅极绝缘膜; 第一岛状半导体层和第二岛状半导体层，其各自形成为微晶半导体层的堆叠和在其上表面上具有凹陷的缓冲层，栅极电极之间插入栅极绝缘膜; 导电半导体层; 以及设置在导电半导体层上的导电层。导电半导体层设置在与栅极绝缘膜接触的第一岛状半导体层和第二岛状半导体层之间。

6. 发明申请

US20090137095A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR SUBSTRATE MANUFACTURING APPARATUS 有权
标题翻译：制造半导体基板和半导体基板制造设备的方法
公开(公告)号：US20090137095A1
公开(公告)日：2009-05-28
申请号：US12275809
申请日：2008-11-21
申请人： Akihisa SHIMOMURA , Masaki KOYAMA , Satohiro OKAMOTO
发明人： Akihisa SHIMOMURA , Masaki KOYAMA , Satohiro OKAMOTO
IPC分类号： H01L21/02 , B29C65/00
CPC分类号： H01L21/76254
摘要： An object is to provide a uniform semiconductor substrate in which defective bonding is reduced. A further object is to manufacture the semiconductor substrate with a high yield. A first substrate and a second substrate are bonded in a reduced-pressure atmosphere by placing the first substrate at a certain region surrounded by an airtight holding mechanism provided over a support to surround the certain region of a surface of the support; placing the second substrate so as to come to be in contact with the airtight holding mechanism to ensure airtightness of a space surrounded by the support, the airtight holding mechanism, and the second substrate; evacuating the space whose airtightness is secured, thereby reducing an pressure in the space; disposing the second substrate in close contact with the first substrate using difference between the pressure in the space and outside atmpspheric pressure; and performing heat treatment.
摘要翻译：目的在于提供一种均匀的半导体衬底，其中不良接合被降低。另一个目的是以高产率制造半导体衬底。第一基板和第二基板通过将第一基板放置在由设置在支撑件上的气密保持机构包围的一定区域上而在减压气氛中接合，以围绕支撑体的表面的特定区域; 将第二基板放置成与气密保持机构接触，以确保由支撑体，气密保持机构和第二基板包围的空间的气密性; 疏散其气密性的空间，从而减小空间中的压力; 使用空间中的压力和外部大气压之间的差异将第二基板设置为与第一基板紧密接触; 并进行热处理。

7. 发明申请

US20100231374A1 WHEELED VEHICLE MOUNTED WITH RFID TAG, RFID TAG, SPEED MEASUREMENT SYSTEM, AND SPEED MEASUREMENT METHOD 有权
标题翻译：带有RFID标签，RFID标签，速度测量系统和速度测量方法的轮式车辆
公开(公告)号：US20100231374A1
公开(公告)日：2010-09-16
申请号：US12787921
申请日：2010-05-26
申请人： Yuta ENDO , Noriaki UTO , Satohiro OKAMOTO
发明人： Yuta ENDO , Noriaki UTO , Satohiro OKAMOTO
IPC分类号： B60Q1/54
CPC分类号： G08G1/017 , G06K17/0022 , G06K19/07749 , G08G1/052 , H04B5/0056
摘要： An RFID tag having a memory portion for holding information on a wheeled vehicle is mounted on the wheeled vehicle, and an external interrogator and the RFID tag exchange information with each other. Further, an RFID tag having a memory portion for holding information on a wheeled vehicle and a communication device for exchanging information with the MD tag are set on the wheeled vehicle. When the external interrogator and the RFID tag exchange information with each other, the communication device holds information of a situation, for example, speed information, information on date and time, and the like in the memory portion in the RFID tag.
摘要翻译：具有用于在轮式车辆上保持信息的存储部分的RFID标签安装在轮式车辆上，并且外部询问器和RFID标签彼此交换信息。此外，具有用于保持轮式车辆上的信息的存储部分和用于与MD标签交换信息的通信装置的RFID标签设置在轮式车辆上。当外部询问器和RFID标签彼此交换信息时，通信装置将RFID信息的存储部分中的信息，例如速度信息，日期和时间信息等信息保存。

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