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    • 2. 发明授权
    • Infrared detector
    • 红外探测器
    • US06777682B2
    • 2004-08-17
    • US10128570
    • 2002-04-24
    • Tomohiro IshikawaHirofumi Yagi
    • Tomohiro IshikawaHirofumi Yagi
    • G01J520
    • G01J5/08G01J5/0853G01J5/20H01L27/14649H01L27/14687
    • An infrared detector includes a semiconductor substrate having a hollow, a single crystal silicon thin film opposite the hollow at a distance from the semiconductor substrate, thermoelectric converters embedded in the single crystal silicon thin film and converting heat energy generated by infrared light irradiating the single crystal silicon thin film into an electric signal, a first connecting layer embedded in the single crystal silicon thin film and electrically connecting the thermoelectric converters to each other and a second connecting layer for transmitting the electric signal output by the thermoelectric converters to a wire in the semiconductor substrate. In the infrared detector, at least one of the first and second connecting layers is a silicon compound.
    • 红外检测器包括:半导体衬底,具有中空部分,与半导体衬底相距一定距离的中空部分的单晶硅薄膜;嵌入在单晶硅薄膜中的热电转换器,转换由照射单晶的红外光产生的热能; 将硅薄膜变成电信号,将第一连接层嵌入在单晶硅薄膜中并将热电转换器彼此电连接;以及第二连接层,用于将由热电转换器输出的电信号传输到半导体中的导线 基质。 在红外检测器中,第一和第二连接层中的至少一个是硅化合物。