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1. 发明授权

US07981700B2 Semiconductor oxidation apparatus and method of producing semiconductor element 有权
标题翻译：半导体氧化装置及半导体元件的制造方法
公开(公告)号：US07981700B2
公开(公告)日：2011-07-19
申请号：US10592213
申请日：2006-02-13
申请人： Shunichi Sato , Naoto Jikutani , Akihiro Itoh , Shinya Umemoto , Yoshiaki Zenno , Takatoshi Yamamoto
发明人： Shunichi Sato , Naoto Jikutani , Akihiro Itoh , Shinya Umemoto , Yoshiaki Zenno , Takatoshi Yamamoto
IPC分类号： H01L21/00 , G01R31/26 , H01L21/76
CPC分类号： H01S5/18358 , H01S5/18313 , H01S5/2215
摘要： A semiconductor oxidation apparatus is provided with a sealable oxidation chamber defined by walls, a base provided within the oxidation chamber and configured to support a semiconductor sample, a supply part configured to supply water vapor into the oxidation chamber to oxidize a specific portion of the semiconductor sample, a monitoring window provided in one of the walls of the oxidation chamber and disposed at a position capable of confronting the semiconductor sample supported on the base, a monitoring part provided outside the oxidation chamber and capable of confronting the semiconductor sample supported on the base via the monitoring window, and an adjusting part configured to adjust a distance between the base and the monitoring part.
摘要翻译：半导体氧化装置设置有由壁限定的可密封氧化室，设置在氧化室内并配置为支撑半导体样品的基座，配置成将水蒸气供应到氧化室中以供氧化半导体特定部分的供应部分样品，设置在所述氧化室的一个壁中并设置在能够面对支撑在所述基底上的所述半导体样品的位置处的监测窗口，设置在所述氧化室外部并且能够面对所述基底上的所述半导体样品的监视部以及配置为调整基座和监视部件之间的距离的调节部件。

2. 发明申请

US20080233017A1 Semiconductor Oxidation Apparatus and Method of Producing Semiconductor Element 有权
标题翻译：半导体氧化装置及其制造方法
公开(公告)号：US20080233017A1
公开(公告)日：2008-09-25
申请号：US10592213
申请日：2006-02-13
申请人： Shunichi Sato , Naoto Jikutani , Akihiro Itoh , Shinya Umemoto , Yoshiaki Zenno , Takatoshi Yamamoto
发明人： Shunichi Sato , Naoto Jikutani , Akihiro Itoh , Shinya Umemoto , Yoshiaki Zenno , Takatoshi Yamamoto
IPC分类号： B01J19/00 , H01L21/469
CPC分类号： H01S5/18358 , H01S5/18313 , H01S5/2215
摘要： A semiconductor oxidation apparatus is provided with a sealable oxidation chamber defined by walls, a base provided within the oxidation chamber and configured to support a semiconductor sample, a supply part configured to supply water vapor into the oxidation chamber to oxidize a specific portion of the semiconductor sample, a monitoring window provided in one of the walls of the oxidation chamber and disposed at a position capable of confronting the semiconductor sample supported on the base, a monitoring part provided outside the oxidation chamber and capable of confronting the semiconductor sample supported on the base via the monitoring window, and an adjusting part configured to adjust a distance between the base and the monitoring part.
摘要翻译：半导体氧化装置设置有由壁限定的可密封氧化室，设置在氧化室内并配置为支撑半导体样品的基座，配置成将水蒸气供应到氧化室中以供氧化半导体特定部分的供应部分样品，设置在所述氧化室的一个壁中并设置在能够面对支撑在所述基底上的所述半导体样品的位置处的监测窗口，设置在所述氧化室外部并且能够面对所述基底上的所述半导体样品的监视部以及配置为调整基座和监视部件之间的距离的调节部件。

3. 发明授权

US07968362B2 Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system 有权
标题翻译：半导体发光器件，表面发射激光二极管及其制造装置，制造方法，光模块和光通信系统
公开(公告)号：US07968362B2
公开(公告)日：2011-06-28
申请号：US12408362
申请日：2009-03-20
申请人： Takashi Takahashi , Morimasa Kaminishi , Shunichi Sato , Akihiro Itoh , Naoto Jikutani
发明人： Takashi Takahashi , Morimasa Kaminishi , Shunichi Sato , Akihiro Itoh , Naoto Jikutani
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , B82Y20/00 , C23C16/301 , C23C16/54 , C30B25/02 , C30B29/40 , H01L21/02395 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02549 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L33/025 , H01L33/10 , H01L33/32 , H01S5/0014 , H01S5/02284 , H01S5/18305 , H01S5/18308 , H01S5/18311 , H01S5/18341 , H01S5/18394 , H01S5/3211 , H01S5/32366 , H01S5/343 , H01S5/34306 , H01S5/34333 , H01S2304/04
摘要： A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.
摘要翻译：半导体发光器件具有在衬底和含有氮的有源层之间包含Al的半导体层，其中在生长所述有源层之前从生长室中除去Al和氧，并且与Al一起掺入所述有源层中的氧浓度被设定为使得所述半导体发光装置能够在室温下进行连续激光振荡的电平。

4. 发明申请

US20080212636A1 Surface-Emission Laser Diode and Fabrication Process Thereof 有权
标题翻译：表面发射激光二极管及其制造工艺
公开(公告)号：US20080212636A1
公开(公告)日：2008-09-04
申请号：US10567809
申请日：2005-06-08
申请人： Shunichi Sato , Akihiro Itoh , Naoto Jikutani
发明人： Shunichi Sato , Akihiro Itoh , Naoto Jikutani
IPC分类号： H01S5/187 , H01L33/00
CPC分类号： H01S5/343 , H01S5/02284 , H01S5/0425 , H01S5/18311 , H01S5/18347 , H01S5/18383 , H01S5/2205 , H01S5/423
摘要： A surface-emission laser diode comprises a cavity region over a semiconductor substrate and includes an active layer containing at least one quantum well active layer producing a laser light and a barrier layer, a spacer layer is provided in the vicinity of the active layer and formed of at least one material, an upper and lower reflectors are provided at a top part and a bottom part of the cavity region, the cavity region and the upper and lower reflectors form a mesa structure over the semiconductor substrate, the upper and lower reflectors being formed of a semiconductor distributed Bragg reflector having a periodic change of refractive index and reflecting incident light by interference of optical waves, at least a part of the semiconductor distributed Bragg reflector is formed of a layer of small refractive index of AlxGa1-xAs (0
摘要翻译：表面发射激光二极管包括在半导体衬底上的空腔区域，并且包括含有产生激光和阻挡层的至少一个量子阱活性层的有源层，在有源层附近提供间隔层，并形成的至少一种材料，上部和下部反射器设置在空腔区域的顶部和底部，空腔区域和上部和下部反射器在半导体衬底上形成台面结构，上部和下部反射器为由折射率周期性变化并通过光波干涉反射入射光的半导体分布式布拉格反射体形成，半导体分布式布拉格反射体的至少一部分由Al x的小折射率层形成，（0 的高折射率层 > As（0 <= y

5. 发明授权

US07260137B2 Vertical-cavity surface-emission type laser diode and fabrication process thereof 有权
标题翻译：垂直腔表面发射型激光二极管及其制造工艺
公开(公告)号：US07260137B2
公开(公告)日：2007-08-21
申请号：US11338220
申请日：2006-01-23
申请人： Shunichi Sato , Takashi Takahashi , Naoto Jikutani , Morimasa Kaminishi , Akihiro Itoh
发明人： Shunichi Sato , Takashi Takahashi , Naoto Jikutani , Morimasa Kaminishi , Akihiro Itoh
IPC分类号： H01S5/183
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/18308 , H01S5/3072 , H01S5/3201 , H01S5/3211 , H01S5/3218 , H01S5/3219 , H01S5/32366 , H01S5/3403 , H01S5/34306 , H01S5/34313 , H01S5/34386 , H01S5/423
摘要： A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.
摘要翻译：垂直腔表面发射型激光二极管包括由上反射器和下反射器夹持的有源区形成的光腔，其中下反射器由分布式布拉格反射器形成，并且非光学重组消除层设置在有源区中的有源层和下反射器。

6. 发明申请

US20120263206A1 SURFACE-EMISSION LASER DIODE AND FABRICATION PROCESS THEREOF 有权
标题翻译：表面发射激光二极管及其制造工艺
公开(公告)号：US20120263206A1
公开(公告)日：2012-10-18
申请号：US13459333
申请日：2012-04-30
申请人： Shunichi SATO , Akihiro Itoh , Naoto Jikutani
发明人： Shunichi SATO , Akihiro Itoh , Naoto Jikutani
IPC分类号： H01S5/34 , H04B10/04 , G03G15/04
CPC分类号： H01S5/343 , H01S5/02284 , H01S5/0425 , H01S5/18311 , H01S5/18347 , H01S5/18383 , H01S5/2205 , H01S5/423
摘要： A surface-emission laser diode includes a GaAs substrate, a cavity region, and upper and lower reflectors provided at a top part and a bottom part of the cavity region, the upper reflector and/or the lower reflector including a semiconductor Bragg reflector, at least a part of the semiconductor distributed Bragg reflector includes a semiconductor layer containing Al, Ga and As as major components, there being provided, between the active layer and the semiconductor layer that contains Al, Ga and As as major components, a semiconductor layer containing Al, In and P as major components adjacent to the semiconductor layer that contains Al, Ga and As as major components, with an interface formed coincident to a location of a node of electric strength distribution.
摘要翻译：表面发射激光二极管包括GaAs衬底，空腔区域和设置在空腔区域的顶部和底部的上反射器和下反射器，上反射器和/或下反射器包括半导体布拉格反射器，半导体分布布拉格反射器的至少一部分包括以Al，Ga和As为主要成分的半导体层，在有源层和含有Al，Ga和As作为主要成分的半导体层之间提供含有 Al，In和P作为与Al，Ga和As作为主要成分的半导体层相邻的主要成分，其界面与电强度分布的节点的位置一致。

7. 发明申请

US20090168828A1 VERTICAL-CAVITY, SURFACE-EMISSION TYPE LASER DIODE AND FABRICATION PROCESS THEREOF 有权
标题翻译：垂直孔，表面发射型激光二极管及其制造工艺
公开(公告)号：US20090168828A1
公开(公告)日：2009-07-02
申请号：US12393701
申请日：2009-02-26
申请人： Shunichi Sato , Takashi Takahashi , Naoto Jikutani , Morimasa Kaminishi , Akihiro Itoh
发明人： Shunichi Sato , Takashi Takahashi , Naoto Jikutani , Morimasa Kaminishi , Akihiro Itoh
IPC分类号： H01S5/183
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/18308 , H01S5/3072 , H01S5/3201 , H01S5/3211 , H01S5/3218 , H01S5/3219 , H01S5/32366 , H01S5/3403 , H01S5/34306 , H01S5/34313 , H01S5/34386 , H01S5/423
摘要： A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.
摘要翻译：垂直腔表面发射型激光二极管包括由上反射器和下反射器夹持的有源区形成的光腔，其中下反射器由分布式布拉格反射器形成，并且非光学重组消除层设置在有源区中的有源层和下反射器。

8. 发明申请

US20070263689A1 Vertical-cavity, surface-emission type laser diode and fabrication process thereof 有权
标题翻译：垂直腔，表面发射型激光二极管及其制造工艺
公开(公告)号：US20070263689A1
公开(公告)日：2007-11-15
申请号：US11827818
申请日：2007-07-13
申请人： Shunichi Sato , Takashi Takahashi , Naoto Jikutani , Morimasa Kaminishi , Akihiro Itoh
发明人： Shunichi Sato , Takashi Takahashi , Naoto Jikutani , Morimasa Kaminishi , Akihiro Itoh
IPC分类号： H01S3/10
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/18308 , H01S5/3072 , H01S5/3201 , H01S5/3211 , H01S5/3218 , H01S5/3219 , H01S5/32366 , H01S5/3403 , H01S5/34306 , H01S5/34313 , H01S5/34386 , H01S5/423
摘要： A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.
摘要翻译：垂直腔表面发射型激光二极管包括由上反射器和下反射器夹持的有源区形成的光腔，其中下反射器由分布式布拉格反射器形成，并且非光学重组消除层设置在有源区中的有源层和下反射器。

9. 发明授权

US06975663B2 Surface-emission laser diode operable in the wavelength band of 1.1-7μm and optical telecommunication system using such a laser diode 有权
标题翻译：表面发射激光二极管可工作在1.1-7μm的波长带和使用这种激光二极管的光通信系统
公开(公告)号：US06975663B2
公开(公告)日：2005-12-13
申请号：US10085204
申请日：2002-02-26
申请人： Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Shunichi Sato , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi , Naoto Jikutani , Takashi Takahashi , Akihiro Itoh
发明人： Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Shunichi Sato , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi , Naoto Jikutani , Takashi Takahashi , Akihiro Itoh
IPC分类号： H01S5/022 , H01S5/183 , H01S5/323 , H01S5/42 , H01S3/08 , H01S5/00
CPC分类号： H01S5/18361 , H01L2224/48091 , H01S5/0071 , H01S5/02284 , H01S5/0262 , H01S5/0264 , H01S5/0683 , H01S5/18313 , H01S5/18358 , H01S5/32366 , H01S5/423 , H01S2301/173 , H01L2924/00014
摘要： A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 μm or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm.
摘要翻译：表面发射激光二极管包括调谐到波长为1.1μm或更长的分布布拉格反射器，其中分布布拉格反射器包括低折射率层和高折射率层的交替重复，其中异相缓冲层具有插入其间的中间折射率，厚度在5-50nm的范围内。

10. 发明授权

US08774242B2 Surface emitting laser diode, optical scanning apparatus and image forming apparatus 有权
标题翻译：表面发射激光二极管，光学扫描装置和成像装置
公开(公告)号：US08774242B2
公开(公告)日：2014-07-08
申请号：US13466217
申请日：2012-05-08
申请人： Akihiro Itoh , Kazuhiro Harasaka , Shunichi Sato , Naoto Jikutani
发明人： Akihiro Itoh , Kazuhiro Harasaka , Shunichi Sato , Naoto Jikutani
IPC分类号： H01S5/00
CPC分类号： G03G15/04072 , B82Y20/00 , G02B26/123 , H01S5/0014 , H01S5/0421 , H01S5/0655 , H01S5/18313 , H01S5/18333 , H01S5/18338 , H01S5/18355 , H01S5/18394 , H01S5/3202 , H01S5/3403 , H01S5/3436 , H01S5/423 , H01S2301/185
摘要： A surface emitting laser diode comprises a substrate, a lower reflector formed over the substrate, an active layer formed over the lower reflector, an upper reflector formed over the active layer, a current restrict structure including a current confinement region surrounded by insulation region. The current restrict structure is disposed in an upper reflector or between an active layer and the upper reflector, and an upper electrode formed over the upper reflector includes an aperture which corresponds to an emission region from which light is emitted in a first direction perpendicular to a surface of a substrate. The emission region and the current restrict structure including the current confinement region are selectively configured to obtain high single transverse mode, stabilized polarization direction, isotropic beam cross section and small divergence angle, while allowing the device to be manufactured with high yield rate.
摘要翻译：表面发射激光二极管包括衬底，形成在衬底上的下反射器，形成在下反射器上的有源层，形成在有源层上的上反射器，限流结构，包括由绝缘区包围的电流限制区。电流限制结构设置在上反射器中或有源层和上反射器之间，并且形成在上反射器上的上电极包括对应于沿与第一方向垂直的第一方向发射光的发射区域的孔基材表面。包括电流限制区域的发射区域和电流限制结构被选择性地构造成获得高单横模，稳定偏振方向，各向同性束横截面和小发散角，同时允许以高产率制造装置。

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