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1. 发明申请

US20120263206A1 SURFACE-EMISSION LASER DIODE AND FABRICATION PROCESS THEREOF 有权
标题翻译：表面发射激光二极管及其制造工艺
公开(公告)号：US20120263206A1
公开(公告)日：2012-10-18
申请号：US13459333
申请日：2012-04-30
申请人： Shunichi SATO , Akihiro Itoh , Naoto Jikutani
发明人： Shunichi SATO , Akihiro Itoh , Naoto Jikutani
IPC分类号： H01S5/34 , H04B10/04 , G03G15/04
CPC分类号： H01S5/343 , H01S5/02284 , H01S5/0425 , H01S5/18311 , H01S5/18347 , H01S5/18383 , H01S5/2205 , H01S5/423
摘要： A surface-emission laser diode includes a GaAs substrate, a cavity region, and upper and lower reflectors provided at a top part and a bottom part of the cavity region, the upper reflector and/or the lower reflector including a semiconductor Bragg reflector, at least a part of the semiconductor distributed Bragg reflector includes a semiconductor layer containing Al, Ga and As as major components, there being provided, between the active layer and the semiconductor layer that contains Al, Ga and As as major components, a semiconductor layer containing Al, In and P as major components adjacent to the semiconductor layer that contains Al, Ga and As as major components, with an interface formed coincident to a location of a node of electric strength distribution.
摘要翻译：表面发射激光二极管包括GaAs衬底，空腔区域和设置在空腔区域的顶部和底部的上反射器和下反射器，上反射器和/或下反射器包括半导体布拉格反射器，半导体分布布拉格反射器的至少一部分包括以Al，Ga和As为主要成分的半导体层，在有源层和含有Al，Ga和As作为主要成分的半导体层之间提供含有 Al，In和P作为与Al，Ga和As作为主要成分的半导体层相邻的主要成分，其界面与电强度分布的节点的位置一致。

2. 发明申请

US20110128343A1 SURFACE-EMITTING LASER ELEMENT, SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNER DEVICE, AND IMAGE FORMING APPARATUS 有权
标题翻译：表面发射激光元件，表面发射激光阵列，光学扫描仪器和图像形成装置
公开(公告)号：US20110128343A1
公开(公告)日：2011-06-02
申请号：US12950365
申请日：2010-11-19
申请人： Shunichi SATO , Kazuhiro Harasaka , Naoto Jikutani
发明人： Shunichi SATO , Kazuhiro Harasaka , Naoto Jikutani
IPC分类号： B41J2/435 , H01S5/00
CPC分类号： H01S5/18394 , B82Y20/00 , H01S5/0425 , H01S5/0655 , H01S5/18311 , H01S5/18327 , H01S5/1835 , H01S5/18358 , H01S5/18369 , H01S5/18391 , H01S5/3202 , H01S5/3434 , H01S5/423 , H01S2301/18
摘要： A disclosed surface-emitting laser element includes a resonator structure having an active layer, a first semiconductor multilayer mirror and a second semiconductor multilayer mirror configured to sandwich the resonator structure having the active layer, an electrode provided around an emission region of a light-emitting surface, and a dielectric film provided in a peripheral portion within the emission region and outside a central portion of the emission region to make a reflectance of the peripheral portion lower than a reflectance of the central portion. In the surface-emitting laser element, an outer shape of a portion where the electrode provided around the emission region of the light-emitting surface is in contact with a contact layer includes corners.
摘要翻译：所公开的表面发射激光元件包括具有有源层的谐振器结构，第一半导体多层反射镜和第二半导体多层反射镜，其被配置为夹着具有有源层的谐振器结构，设置在发光区域的发射区域周围的电极表面，以及设置在发光区域的周边部分和发光区域的中心部分外的电介质膜，以使周边部分的反射率低于中心部分的反射率。在表面发射激光元件中，设置在发光面的发光区域周围的电极与接触层接触的部分的外形包括角部。

3. 发明申请

US20110115872A1 SURFACE-EMITTING LASER ELEMENT, SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNER DEVICE, AND IMAGE FORMING APPARATUS 有权
标题翻译：表面发射激光元件，表面发射激光阵列，光学扫描仪器和图像形成装置
公开(公告)号：US20110115872A1
公开(公告)日：2011-05-19
申请号：US12910262
申请日：2010-10-22
申请人： Kazuhiro HARASAKA , Shunichi SATO , Naoto JIKUTANI , Satoru SUGAWARA
发明人： Kazuhiro HARASAKA , Shunichi SATO , Naoto JIKUTANI , Satoru SUGAWARA
IPC分类号： B41J2/435 , H01S5/00 , G02B26/08 , G02B26/10
CPC分类号： H01S5/18394 , B41J2/45 , B82Y20/00 , G02B5/0833 , G02B26/124 , G02B27/0977 , G03G15/04072 , G03G15/0435 , G03G15/326 , G03G2215/0404 , H01S5/0425 , H01S5/18311 , H01S5/18327 , H01S5/1835 , H01S5/18355 , H01S5/18358 , H01S5/18369 , H01S5/18391 , H01S5/3202 , H01S5/3434 , H01S5/423 , H01S2301/166
摘要： A disclosed surface-emitting laser element includes a substrate, multiple semiconductor layers stacked on the substrate including a resonator structure including an active layer, a semiconductor multilayer mirror on the resonator structure, and a confined structure where a current passage region is enclosed by at least an oxide generated by oxidation of part of a selective oxidation layer containing aluminum, an electrode provided around an emission region, and a dielectric film provided in a peripheral portion within the emission region and outside a central portion of the emission region to make a reflectance of the peripheral portion lower than that of the central portion. The dielectric film is arranged such that a reflectance of a high-order transverse mode in a second direction is higher than that in a first direction, and a width of the current passage region in the first direction is greater than that in the second direction.
摘要翻译：所公开的表面发射激光器元件包括：衬底，层叠在衬底上的多个半导体层，包括谐振器结构，该谐振器结构包括有源层，谐振器结构上的半导体多层反射镜，以及至少包含电流通过区域的限制结构通过氧化生成的含有铝的选择性氧化层的部分的氧化物，设置在发光区域周围的电极，以及设置在发光区域的周边部分和发光区域的中心部分外的电介质膜，周边部分低于中央部分的周边部分。电介质膜被布置成使得第二方向上的高次横模的反射率高于第一方向的反射率，并且电流通过区域在第一方向上的宽度大于第二方向上的宽度。

4. 发明申请

US20150063396A1 VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, VERTICAL CAVITY SURFACE EMITTING LASER ARRAY, OPTICAL SCANNING APPARATUS, IMAGE FORMING APPARATUS, OPTICAL TRANSMISSION MODULE AND OPTICAL TRANSMISSION SYSTEM 审中-公开
标题翻译：垂直孔表面发射激光装置，垂直孔表面发射激光阵列，光学扫描装置，图像形成装置，光传输模块和光传输系统
公开(公告)号：US20150063396A1
公开(公告)日：2015-03-05
申请号：US14512592
申请日：2014-10-13
申请人： Naoto JIKUTANI , Shunichi SATO , Satoru SUGAWARA , Hiroshi MOTOMURA
发明人： Naoto JIKUTANI , Shunichi SATO , Satoru SUGAWARA , Hiroshi MOTOMURA
IPC分类号： H01S5/183
CPC分类号： H01S5/18361 , B41J2/442 , B41J2/473 , H01L33/10 , H01L33/105 , H01S5/0655 , H01S5/18308 , H01S5/18311 , H01S5/18313 , H01S5/18347 , H01S5/1835 , H01S5/18358 , H01S5/18394 , H01S5/187 , H01S5/3202 , H01S5/423 , H01S2301/166 , H01S2301/176
摘要： A disclosed vertical cavity surface emitting laser device emits light orthogonally in relation to a substrate and includes a resonator structure including an active layer; and semiconductor multilayer reflectors disposed in such a manner as to sandwich the resonator structure between them and including a confinement structure which confines an injected current and transverse modes of oscillation light at the same time. The confinement structure has an oxidized region which surrounds a current passage region. The oxidized region is formed by oxidizing a part of a selective oxidation layer which includes aluminum and includes at least an oxide. The selective oxidation layer is at least 25 nm in thickness. The semiconductor multilayer reflectors include an optical confinement reducing section which reduces optical confinement in a transverse direction. The optical confinement reducing section is disposed on the substrate side in relation to the resonator structure.
摘要翻译：所公开的垂直腔表面发射激光器装置相对于衬底正交地发光，并且包括包括有源层的谐振器结构; 以及半导体多层反射器，以将谐振器结构夹在它们之间并且包括同时限制注入的电流和横向振荡模式的约束结构的方式设置。限制结构具有围绕电流通道区域的氧化区域。通过氧化包括铝的部分选择性氧化层并至少包含一种氧化物而形成氧化区。选择性氧化层的厚度至少为25nm。半导体多层反射器包括减少横向光学限制的光限制减少部分。光限制减少部分相对于谐振器结构设置在衬底侧。

5. 发明申请

US20090303308A1 SURFACE-EMITTING LASER ELEMENT, SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNING DEVICE, AND IMAGE FORMING APPARATUS 有权
标题翻译：表面发射激光元件，表面发射激光阵列，光学扫描装置和图像形成装置
公开(公告)号：US20090303308A1
公开(公告)日：2009-12-10
申请号：US12478085
申请日：2009-06-04
申请人： Akihiro ITOH , Shunichi SATO
发明人： Akihiro ITOH , Shunichi SATO
IPC分类号： H01S5/00 , G02B26/10 , B41J2/47
CPC分类号： H01S5/18394 , G02B26/123 , H01S5/18311 , H01S5/1835 , H01S5/18355 , H01S5/3202 , H01S5/423
摘要： A surface-emitting laser element for emitting light in a direction perpendicular to a substrate, including a substrate with a normal direction of a principal plane inclining toward one direction of with respect to one direction of and a mesa structure formed on the substrate and having a narrowed structure with an oxide produced by oxidizing a part of a layer to be oxidized selectively, containing aluminum and surrounding an electric current passage area, wherein a cross-section of mesa structure being parallel to the substrate is parallel to a substrate surface and orthogonal to both one direction of and one direction of and a length in a first direction passing through a center of the electric current passage area is more than a length in a second direction parallel to a substrate surface and orthogonal to the first direction.
摘要翻译： 1.一种表面发射激光元件，用于沿垂直于衬底的方向发射光，包括基本上沿相对于<100°的一个方向向<111>倾斜的主平面的法线方向的基板和形成的台面结构并且具有通过氧化被选择性地被氧化的一部分被氧化物并且包围电流通道区域而产生的氧化物的窄结构，其中平行于衬底的台面结构的横截面平行于与<100>的一个方向和<111>的一个方向正交且通过电流通道区域的中心的沿着第一方向的长度的基板表面大于平行于基板的第二方向的长度表面并与第一方向正交。

6. 发明申请

US20130286150A1 SURFACE-EMISSION LASER ARRAY, OPTICAL SCANNING APPARATUS AND IMAGE FORMING APPARATUS 有权
标题翻译：表面发射激光阵列，光学扫描装置和图像形成装置
公开(公告)号：US20130286150A1
公开(公告)日：2013-10-31
申请号：US13930409
申请日：2013-06-28
申请人： Shunichi SATO , Akihiro ITOH , Hiroyoshi SHOUJI , Yoshinori HAYASHI , Daisuke ICHII , Kei HARA , Mitsumi FUJII
发明人： Shunichi SATO , Akihiro ITOH , Hiroyoshi SHOUJI , Yoshinori HAYASHI , Daisuke ICHII , Kei HARA , Mitsumi FUJII
IPC分类号： B41J2/45
CPC分类号： B41J2/45 , B41J2/473 , B82Y20/00 , G02B26/123 , H01S5/18311 , H01S5/18358 , H01S5/3432 , H01S5/423
摘要： A surface-emission laser array comprises a plurality of surface-emission laser diode elements arranged in the form of a two-dimensional array, wherein a plurality of straight lines drawn perpendicularly to a straight line extending in a first direction from respective centers of the plurality of surface emission laser diode elements aligned in a second direction perpendicular to the first direction, are formed with generally equal interval in the first direction, the plurality of surface-emission laser diode elements are aligned in the first direction with an interval set to a reference value, and wherein the number of the surface-emission laser diode elements aligned in the first direction is smaller than the number of the surface-emission laser diode elements aligned in the second direction.
摘要翻译：表面发射激光器阵列包括以二维阵列的形式布置的多个表面发射激光二极管元件，其中垂直于从第一方向延伸的直线绘制的多条直线从多个在与第一方向垂直的第二方向上排列的表面发射激光二极管元件在第一方向上以大致相等的间隔形成，多个表面发射激光二极管元件在第一方向上对准，间隔设置为基准并且其中在所述第一方向上排列的所述表面发射激光二极管元件的数量小于在所述第二方向上排列的所述表面发射激光二极管元件的数量。

7. 发明申请

US20130015920A1 ATOMIC OSCILLATOR AND METHOD FOR FABRICATING ATOMIC OSCILLATOR 有权
标题翻译：原子振荡器和制造原子振荡器的方法
公开(公告)号：US20130015920A1
公开(公告)日：2013-01-17
申请号：US13546531
申请日：2012-07-11
申请人： Shunichi SATO , Akihiro ITOH , Yukito SATO
发明人： Shunichi SATO , Akihiro ITOH , Yukito SATO
IPC分类号： H03B17/00 , H05K13/00
CPC分类号： G04F5/14 , H03L7/26 , Y10T29/49002
摘要： An atomic oscillator is disclosed, including an Alkaline metal cell, a light source illuminating a laser beam to the Alkaline metal cell, and a light detector detecting light passing through the Alkaline metal cell. The Alkaline metal cell includes a first member, a second member, a cell internal portion, and an Alkaline metal raw material. In the first member, a first glass substrate is bonded on a second surface of a first substrate where a first opening part is formed. In the second member, a second glass substrate is bonded to a fourth surface of a second substrate where a second opening part is formed. The cell internal portion is formed by the first opening part and the second opening part by bonding the first surface to the third surface. The Alkaline metal raw material is enclosed by the cell internal portion.
摘要翻译：公开了一种原子振荡器，其包括碱金属电池，向碱金属电池照射激光束的光源和检测通过碱金属电池的光的光检测器。碱金属电池包括第一构件，第二构件，电池内部部分和碱金属原料。在第一构件中，第一玻璃基板接合在形成第一开口部的第一基板的第二表面上。在第二构件中，将第二玻璃基板接合到形成第二开口部的第二基板的第四表面。通过将第一表面粘合到第三表面，由第一开口部和第二开口部形成电池内部。碱金属原料被电池内部包围。

8. 发明申请

US20120069416A1 SURFACE-EMISSION LASER ARRAY, OPTICAL SCANNING APPARATUS AND IMAGE FORMING APPARATUS 有权
标题翻译：表面发射激光阵列，光学扫描装置和图像形成装置
公开(公告)号：US20120069416A1
公开(公告)日：2012-03-22
申请号：US13304874
申请日：2011-11-28
申请人： Shunichi SATO , Akihiro ITOH , Hiroyoshi SHOUJI , Yoshinori HAYASHI , Daisuke ICHII , Kei HARA , Mitsumi FUJII
发明人： Shunichi SATO , Akihiro ITOH , Hiroyoshi SHOUJI , Yoshinori HAYASHI , Daisuke ICHII , Kei HARA , Mitsumi FUJII
IPC分类号： G02B26/10 , H01S5/42
CPC分类号： B41J2/45 , B41J2/473 , B82Y20/00 , G02B26/123 , H01S5/18311 , H01S5/18358 , H01S5/3432 , H01S5/423
摘要： A surface-emission laser array comprises a plurality of surface-emission laser diode elements arranged in the form of a two-dimensional array, wherein a plurality of straight lines drawn perpendicularly to a straight line extending in a first direction from respective centers of the plurality of surface emission laser diode elements aligned in a second direction perpendicular to the first direction, are formed with generally equal interval in the first direction, the plurality of surface-emission laser diode elements are aligned in the first direction with an interval set to a reference value, and wherein the number of the surface-emission laser diode elements aligned in the first direction is smaller than the number of the surface-emission laser diode elements aligned in the second direction.
摘要翻译：表面发射激光器阵列包括以二维阵列的形式布置的多个表面发射激光二极管元件，其中垂直于从第一方向延伸的直线绘制的多条直线从多个在与第一方向垂直的第二方向上排列的表面发射激光二极管元件在第一方向上以大致相等的间隔形成，多个表面发射激光二极管元件在第一方向上对准，间隔设置为基准并且其中在所述第一方向上排列的所述表面发射激光二极管元件的数量小于在所述第二方向上排列的所述表面发射激光二极管元件的数量。

9. 发明申请

US20170077340A1 COMPOUND-SEMICONDUCTOR PHOTOVOLTAIC CELL AND MANUFACTURING METHOD OF COMPOUND-SEMICONDUCTOR PHOTOVOLTAIC CELL 审中-公开
标题翻译：化合物 - 半导体光电池和复合半导体光伏电池的制造方法
公开(公告)号：US20170077340A1
公开(公告)日：2017-03-16
申请号：US15309067
申请日：2015-07-08
申请人： Shunichi SATO
发明人： Shunichi SATO
IPC分类号： H01L31/0687 , H01L31/0693
CPC分类号： H01L31/0687 , H01L31/03046 , H01L31/06875 , H01L31/0693 , H01L31/1892 , Y02E10/544 , Y02P70/521
摘要： A compound-semiconductor photovoltaic cell includes a first photoelectric conversion cell made of a first compound-semiconductor material which lattice matches with GaAs or Ge; a first tunnel junction layer arranged on a deep side farther than the first photoelectric conversion cell in a light incident direction, and including a first p-type (Alx1Ga1-x1)y1In1-y1As (0≦x1
摘要翻译：化合物半导体光伏电池包括与GaAs或Ge晶格匹配的第一化合物半导体材料制成的第一光电转换单元; 第一隧道结层，沿着光入射方向布置在比第一光电转换单元更远的深侧，并且包括第一p型（Al x Ga 1-x 1）y 1 In 1-y 1 As（0≤x1 <1,0

10. 发明申请

US20170025820A1 SURFACE EMITTING LASER, SURFACE EMITTING LASER ELEMENT AND ATOMIC OSCILLATOR 审中-公开
标题翻译：表面发射激光，表面发射激光元件和原子振荡器
公开(公告)号：US20170025820A1
公开(公告)日：2017-01-26
申请号：US15124456
申请日：2015-02-24
申请人： Ryoichiro SUZUKI , Shunichi SATO
发明人： Ryoichiro SUZUKI , Shunichi SATO
IPC分类号： H01S5/183 , G04F5/14 , H01S5/42 , H03L7/26 , H01S5/042 , H01S5/40
CPC分类号： H01S5/18377 , G04F5/145 , H01S5/0421 , H01S5/18313 , H01S5/18341 , H01S5/18358 , H01S5/4087 , H01S5/423 , H03L7/26
摘要： A surface emitting laser for emitting light with a wavelength λ includes a first reflection mirror provided on a semiconductor substrate; a resonator region including an active layer provided on the first reflection mirror; a second reflection mirror, including plural low refraction index layers and plural high refraction index layers, provided on the resonator region; a contact layer provided on the second reflection mirror; a third reflection mirror provided on the contact layer; and an electric current narrowing layer provided between the active layer and the second reflection mirror or in the second reflection mirror. Optical lengths of at least one of thicknesses of the low refraction index layers and the high refraction index layers formed between the electric current narrowing layer and the contact layer are (2N+1)×λ/4 (N=1, 2, . . . ).
摘要翻译：用于发射具有波长λ的光的表面发射激光器包括设置在半导体衬底上的第一反射镜; 包括设置在所述第一反射镜上的有源层的谐振器区域; 第二反射镜，包括设置在谐振器区域上的多个低折射率层和多个高折射率层; 设置在所述第二反射镜上的接触层; 设置在所述接触层上的第三反射镜; 以及设置在有源层和第二反射镜之间或第二反射镜中的电流变窄层。形成在电流变窄层和接触层之间的低折射率层和高折射率层中的至少一个厚度的光学长度为（2N + 1）×λ/ 4（N = 1,2，...）。。）。

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