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    • 1. 发明授权
    • Apparatus for forming deposited film
    • 用于形成沉积膜的装置
    • US5322568A
    • 1994-06-21
    • US999548
    • 1992-12-31
    • Shunichi IshiharaJun-ichi HannaIsamu ShimizuMasaaki Hirooka
    • Shunichi IshiharaJun-ichi HannaIsamu ShimizuMasaaki Hirooka
    • C23C16/452C23C16/00
    • C23C16/452
    • An apparatus for forming a deposited film by introducing two or more kinds of gaseous starting materials for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting materials into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors including precursors under excited state, and forming a deposited film in a plurality of layers with different compositions on a substrate existing in a film forming space spatially communicated with said reaction space with the use of at least one precursor of the precursors as the feeding source for the constituent element of the deposited film, said apparatus comprising a plural number of gas introducing means of a multiple tubular structure for discharging into said reaction space said gaseous starting materials and said gaseous halogenic oxidizing agent through the discharging outlets, respectively, and permitting them to react with each other to form the precursors and means for preventing contact of precursors unnecessary for the desired film formation of the precursors with the substrate.
    • 一种用于通过将用于形成沉积膜的两种或更多种气态起始材料和具有用于所述原料的氧化作用的气态卤素氧化剂引入反应空间以在其间进行化学接触而形成沉积膜的装置,由此 形成多个前体,其包括在激发态下的前体,并且在存在于与所述反应空间空间连通的成膜空间中的基底上形成具有不同组成的多个层的沉积膜,其中使用至少一种前体 前体作为沉积膜的构成元素的进料源,所述装置包括多个多管状结构的气体引入装置,用于通过排出口将所述气态原料和所述气态卤素氧化剂排放到所述反应空间中, 并允许他们作出反应 彼此形成前体和用于防止前体与基质的所需膜形成所必需的前体接触的装置。
    • 3. 发明授权
    • Method for forming thin film multi-layer structure member
    • 薄膜多层结构件形成方法
    • US4868014A
    • 1989-09-19
    • US3054
    • 1987-01-13
    • Masahiro KanaiMasaaki HirookaJun-Ichi HannaIsamu Shimizu
    • Masahiro KanaiMasaaki HirookaJun-Ichi HannaIsamu Shimizu
    • C23C16/452G03G5/082H01L21/205H01L21/336H01L31/20
    • H01L29/66757C23C16/452G03G5/08235H01L21/02425H01L21/0245H01L21/02505H01L21/02532H01L21/02579H01L21/0262H01L31/202H01L31/204Y02E10/50
    • A method for forming a thin film multi-layer structure member having at least one of at least one kind of a semiconductor thin film controlled in valence electron and a semiconductor thin film regulated in band gap comprises the step of forming at least one layer of the semiconductor thin films on a substrate by energizing a heat-generating member constituted of either a single substance or an alloy of a transition metal element having the catalystic effect provided in a film forming space to effect heat generation, bringing a starting material (A) for deposited film formation containing at least one element of halogens and hydrogen in the molecule and a compound (B) containing an element which becomes at least one of the valence electron controller and the band gap regulator into contact with the heat-generating member under heat generating state to cause a thermal dissociation reaction to effect activation, thereby forming a precursor (X) which becomes the starting material for deposited film formation and using the precursor (X) as the feeding source for the constituent element of the thin film, and the step of forming at least one layer of other thin films by introducing a gaseous starting material (a) for deposited film formation and a gaseous halogenic oxidizing agent having the property of oxidation action for the starting material (a) into a reaction space to effect contact therebetween to thereby form chemically a plural number of precursors including precursors under excited state and using at least one precursor of the precursors as the feeding source for the constituent element of the deposited film.
    • 一种用于形成薄膜多层结构构件的方法,所述薄膜多层结构构件具有至少一种受限于价电子的半导体薄膜和在带隙中调节的半导体薄膜中的至少一种,包括形成至少一层 半导体薄膜通过对由成膜空间中具有催化作用的过渡金属元素的单一物质或合金构成的发热元件进行加热而产生发热,使起始材料(A)为 在分子中含有卤素和氢的至少一种元素的沉积膜形成物和含有成为价电子控制器和带隙调节剂中的至少一种的元素的化合物(B),其在发热下与发热元件接触 导致热解离反应进行活化,从而形成成为沉淀的起始原料的前体(X) 并且使用前体(X)作为薄膜的构成元素的供给源,以及通过引入用于沉积膜形成的气态原料(a)形成至少一层其它薄膜的步骤,以及 具有起始材料(a)的氧化作用的气态卤素氧化剂进入反应空间以实现其间的接触,由此在激发态下化学形成包含前体的多种前体,并使用至少一种前体前体作为 用于沉积膜的构成元件的馈送源。