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1. 发明授权

US5366554A Device for forming a deposited film 失效
标题翻译：用于形成沉积膜的装置
公开(公告)号：US5366554A
公开(公告)日：1994-11-22
申请号：US104497
申请日：1993-08-10
申请人： Masahiro Kanai , Masaaki Hirooka , Jun-Ichi Hanna , Isamu Shimizu
发明人： Masahiro Kanai , Masaaki Hirooka , Jun-Ichi Hanna , Isamu Shimizu
IPC分类号： C23C16/40 , C23C16/44 , C23C16/455 , C23C16/54 , G03G5/08 , C23C16/00
CPC分类号： C23C16/45563 , C23C16/402 , C23C16/455 , C23C16/54 , G03G5/08
摘要： There is disclosed a device for forming a deposited film which forms a deposited film by bringing a gaseous starting material for formation of a deposited film into contact with a gaseous oxidizing agent having the property of oxidation action on said starting material, thereby causing a chemical reaction to occur, comprising a plural number of chambers for formation of a deposited film connected to one another, said chamber having a gas releasing means having an orifice for releasing said gaseous starting material and an orifice for releasing said gaseous oxidizing agent provided respectively on both wall surfaces opposed to each other, and a support setting means which is arranged so that at least a part of its constitution may be included within the plane formed by linking mutually the gas releasing means on the both wall surfaces.
摘要翻译：公开了一种用于形成沉积膜的装置，其通过使用于形成沉积膜的气态原料与在所述原料上具有氧化作用的气态氧化剂接触形成沉积膜，从而引起化学反应包括多个用于形成彼此连接的沉积膜的室，所述室具有气体释放装置，其具有用于释放所述气态原料的孔口和用于释放分别设置在两壁上的气态氧化剂的孔口彼此相对的表面以及支撑设定装置，其布置成使得其结构的至少一部分可以包括在通过两个壁表面上的气体释放装置相互连接形成的平面内。

2. 发明授权

US4869931A Method for forming deposited films of group II-VI compounds 失效
标题翻译：形成II-VI族化合物沉积膜的方法
公开(公告)号：US4869931A
公开(公告)日：1989-09-26
申请号：US298219
申请日：1989-01-17
申请人： Masaaki Hirooka , Masahiro Kanai , Jun-Ichi Hanna , Isamu Shimizu
发明人： Masaaki Hirooka , Masahiro Kanai , Jun-Ichi Hanna , Isamu Shimizu
IPC分类号： H01L31/04 , C23C16/30 , C23C16/44 , C23C16/452 , H01L21/205 , H01L31/18
CPC分类号： H01L31/1828 , Y02E10/543
摘要： A method for forming a deposited film, which comprises introducing a gaseous starting material containing an element in the Group II of the periodic table, a starting material containing an element in the Group VI of the periodic table which are gasifiable for formation of a deposited film, and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting materials into a reaction space to effect contact therebetween to thereby chemically form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in a film-forming space by the use of at least one precursor of said precursors as the feeding source for the constituent element of the deposited film.
摘要翻译：一种形成沉积膜的方法，其包括在周期表II族中引入含有元素的气态原料，该原料含有周期表第VI族元素，其可气化以形成沉积膜和对所述原料具有氧化作用的气态卤素氧化剂进入反应空间以进行接触，从而在激发态下化学形成含有前体的多种前体，并在存在于通过使用所述前体的至少一种前体作为沉积膜的构成元素的进料源的成膜空间。

3. 发明授权

US4772570A Method for producing an electronic device having a multi-layer structure 失效
标题翻译：一种具有多层结构的电子装置的制造方法
公开(公告)号：US4772570A
公开(公告)日：1988-09-20
申请号：US946206
申请日：1986-12-24
申请人： Masahiro Kanai , Masaaki Hirooka , Jun-Ichi Hanna , Isamu Shimizu
发明人： Masahiro Kanai , Masaaki Hirooka , Jun-Ichi Hanna , Isamu Shimizu
IPC分类号： H01L31/04 , C23C16/22 , C23C16/452 , H01L21/205 , H01L21/336 , H01L29/78 , H01L29/786 , H01L21/20
CPC分类号： H01L21/0245 , C23C16/22 , C23C16/452 , H01L21/02422 , H01L21/02425 , H01L21/02505 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , Y10S438/935
摘要： A method for producing an electronic device having a multi-layer structure comprising one or more valence electron controlled semiconductor thin layers formed on a substrate comprises forming at least one of said valence electron controlled semiconductor thin layers controlled according to the plasma CVD method and forming at least one of the other constituent layers according to the method comprising introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidizing said starting material into a reaction space to effect chemical contact therebetween to thereby form a plurality of precursors including a precursor in an excited state and transferring at least one of these precursors into a film forming space communicated with the reaction space as a feed source for the constituent element of the deposited film.
摘要翻译：一种具有多层结构的电子器件的制造方法，该多层结构包括在基片上形成的一个或多个价电子受控半导体薄层，包括：根据等离子体CVD法控制的至少一个所述价电子受控半导体薄层，根据包括引入用于形成沉积膜的气态原料和具有将所述起始材料氧化成反应空间的气态卤素氧化剂的方法，至少一个其它构成层之间形成化学接触，由此形成多个前体，其包括处于激发态的前体，并将这些前体中的至少一种转移到与反应空间连通的成膜空间中，作为沉积膜的构成元素的进料源。

4. 发明授权

US4868014A Method for forming thin film multi-layer structure member 失效
标题翻译：薄膜多层结构件形成方法
公开(公告)号：US4868014A
公开(公告)日：1989-09-19
申请号：US3054
申请日：1987-01-13
申请人： Masahiro Kanai , Masaaki Hirooka , Jun-Ichi Hanna , Isamu Shimizu
发明人： Masahiro Kanai , Masaaki Hirooka , Jun-Ichi Hanna , Isamu Shimizu
IPC分类号： C23C16/452 , G03G5/082 , H01L21/205 , H01L21/336 , H01L31/20
CPC分类号： H01L29/66757 , C23C16/452 , G03G5/08235 , H01L21/02425 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L31/202 , H01L31/204 , Y02E10/50
摘要： A method for forming a thin film multi-layer structure member having at least one of at least one kind of a semiconductor thin film controlled in valence electron and a semiconductor thin film regulated in band gap comprises the step of forming at least one layer of the semiconductor thin films on a substrate by energizing a heat-generating member constituted of either a single substance or an alloy of a transition metal element having the catalystic effect provided in a film forming space to effect heat generation, bringing a starting material (A) for deposited film formation containing at least one element of halogens and hydrogen in the molecule and a compound (B) containing an element which becomes at least one of the valence electron controller and the band gap regulator into contact with the heat-generating member under heat generating state to cause a thermal dissociation reaction to effect activation, thereby forming a precursor (X) which becomes the starting material for deposited film formation and using the precursor (X) as the feeding source for the constituent element of the thin film, and the step of forming at least one layer of other thin films by introducing a gaseous starting material (a) for deposited film formation and a gaseous halogenic oxidizing agent having the property of oxidation action for the starting material (a) into a reaction space to effect contact therebetween to thereby form chemically a plural number of precursors including precursors under excited state and using at least one precursor of the precursors as the feeding source for the constituent element of the deposited film.
摘要翻译：一种用于形成薄膜多层结构构件的方法，所述薄膜多层结构构件具有至少一种受限于价电子的半导体薄膜和在带隙中调节的半导体薄膜中的至少一种，包括形成至少一层半导体薄膜通过对由成膜空间中具有催化作用的过渡金属元素的单一物质或合金构成的发热元件进行加热而产生发热，使起始材料（A）为在分子中含有卤素和氢的至少一种元素的沉积膜形成物和含有成为价电子控制器和带隙调节剂中的至少一种的元素的化合物（B），其在发热下与发热元件接触导致热解离反应进行活化，从而形成成为沉淀的起始原料的前体（X）并且使用前体（X）作为薄膜的构成元素的供给源，以及通过引入用于沉积膜形成的气态原料（a）形成至少一层其它薄膜的步骤，以及具有起始材料（a）的氧化作用的气态卤素氧化剂进入反应空间以实现其间的接触，由此在激发态下化学形成包含前体的多种前体，并使用至少一种前体前体作为用于沉积膜的构成元件的馈送源。

5. 发明授权

US5160543A Device for forming a deposited film 失效
标题翻译：用于形成沉积膜的装置
公开(公告)号：US5160543A
公开(公告)日：1992-11-03
申请号：US837601
申请日：1992-02-21
申请人： Shunichi Ishihara , Masaaki Hirooka , Jun-Ichi Hanna , Isamu Shimizu
发明人： Shunichi Ishihara , Masaaki Hirooka , Jun-Ichi Hanna , Isamu Shimizu
IPC分类号： C23C16/452 , C23C16/455 , G03G5/082 , H01L21/205 , H01L31/20
CPC分类号： C23C16/45561 , C23C16/452 , C23C16/455 , G03G5/08278 , H01L21/0237 , H01L21/02532 , H01L21/0262 , H01L31/202 , H01L31/204 , Y02E10/50 , Y02P70/521
摘要： There is disclosed a device for forming a deposited film on a substrate through utilization of chemical reaction between a gaseous starting material for a film to be formed and a gaseous halogenic oxidizing agent which has one or more gas introducing means having a multi-tubular structure with a converted tip end or having a meeting space for both the gases.
摘要翻译：公开了一种用于通过利用待形成的膜的气态原料与气态卤素氧化剂之间的化学反应在基板上形成沉积膜的装置，所述气态卤化氧化剂具有一个或多个具有多管状结构的气体引入装置，转换的尖端或两个气体具有会议空间。

6. 发明授权

US4842897A Method for forming deposited film 失效
标题翻译：沉积膜形成方法
公开(公告)号：US4842897A
公开(公告)日：1989-06-27
申请号：US947036
申请日：1986-12-29
申请人： Eiji Takeuchi , Jun-Ichi Hanna , Isamu Shimizu , Masaaki Hirooka , Akira Sakai , Masao Ueki
发明人： Eiji Takeuchi , Jun-Ichi Hanna , Isamu Shimizu , Masaaki Hirooka , Akira Sakai , Masao Ueki
IPC分类号： C23C16/452 , H01L21/205
CPC分类号： H01L21/02505 , C23C16/452 , H01L21/02422 , H01L21/02425 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： A method for forming deposited film by introducing into a reaction space a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material to effect chemical contact therebetween to thereby form a plural number of precursors including precursors under excited state, and forming said deposited film on a substrate previously position in a film forming space spatially communicated with said reaction space with the use of at least one precursor of these precursors as the feeding source for the constituent element of said deposited film, said method comprising the step of increasing the proportion of the amount of said gaseous starting material introduced relative to the amount of said gaseous halogenic oxidizing agent introduced in said reaction space.
摘要翻译：一种通过向反应空间中引入用于形成沉积膜的气态原料和具有用于所述起始材料的氧化作用的特性的气态卤素氧化剂以在其间进行化学接触从而形成多个前体，其包括在激发态的前体，并且在预先位于成膜空间中的基底上形成所述沉积膜，所述膜形成空间与所述反应空间空间连通，使用这些前体的至少一种前体作为所述沉积的构成元素的进料源所述方法包括增加相对于引入所述反应空间的所述气态卤素氧化剂的量引入的所述气态原料的量的比例的步骤。

7. 发明授权

US4812331A Method for forming deposited film containing group III or V element by generating precursors with halogenic oxidizing agent 失效
标题翻译：通过用卤素氧化剂生成前体形成含有III或V族元素的沉积膜的方法
公开(公告)号：US4812331A
公开(公告)日：1989-03-14
申请号：US942210
申请日：1986-12-16
申请人： Masaaki Hirooka , Masao Ueki , Jun-Ichi Hanna , Isamu Shimizu
发明人： Masaaki Hirooka , Masao Ueki , Jun-Ichi Hanna , Isamu Shimizu
IPC分类号： H01L31/04 , C23C16/30 , C23C16/44 , C23C16/452 , H01L21/205 , H01L31/18 , C23C16/00
CPC分类号： H01L21/02546 , C23C16/301 , H01L21/0242 , H01L21/02543 , H01L21/02549 , H01L21/0262 , H01L31/184 , Y02E10/544
摘要： A method for forming a deposited film, which comprises introducing gaseous starting materials, containing group III and/or group V compound as the constituent element for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting materials into a reaction space to effect contact therebetween to thereby form a plural number of precursors containing precursors under excited state, and forming a deposited film of a substrate existing in a film-forming space with the use of at least one precursor of said precursors as the feeding source for the constituent element of the deposited film.
摘要翻译：一种形成沉积膜的方法，包括引入含有III族和/或V族化合物的气态原料作为形成沉积膜的构成元素和具有氧化作用的气态卤化氧化剂在所述原料上进入反应空间以实现它们之间的接触，从而在激发状态下形成含有前体的多个前体，并且使用至少一种所述前体的前体形成存在于成膜空间中的基板的沉积膜作为为沉积薄膜的组成元素提供源。

8. 发明授权

US4834023A Apparatus for forming deposited film 失效
标题翻译：用于形成沉积膜的装置
公开(公告)号：US4834023A
公开(公告)日：1989-05-30
申请号：US943437
申请日：1986-12-19
申请人： Keishi Saitoh , Masaaki Hirooka , Jun-Ichi Hanna , Isamu Shimizu
发明人： Keishi Saitoh , Masaaki Hirooka , Jun-Ichi Hanna , Isamu Shimizu
IPC分类号： C23C16/44 , C23C16/455
CPC分类号： C23C16/455 , C23C16/45578
摘要： An apparatus for forming a deposited film by bringing gaseous starting materials for forming deposited film contact with a gaseous halogenic oxidizing agent which exerts oxidative effect on the starting materials, comprises, in a chamber for forming the deposited film, gas discharge means comprised of a gas discharge pipe for discharging the gaseous starting materials and a gas discharge pipe for discharging the halogenic oxidizing agent and means for disposing supports on which a plurality of cylindrical supports for depositing the film thereon are arranged around the gas discharge means.
摘要翻译：通过使用于形成沉积膜的气态原料与对原材料发挥氧化作用的气态卤素氧化剂接触形成沉积膜的装置包括在用于形成沉积膜的室中，包括气体用于排出气态原料的排出管和用于排出卤素氧化剂的气体排出管以及用于设置用于沉积其上的多个圆柱形支撑件的支撑件的装置设置在气体排出装置周围。

9. 发明授权

US4771015A Method for producing an electronic device having a multi-layer structure 失效
标题翻译：一种具有多层结构的电子装置的制造方法
公开(公告)号：US4771015A
公开(公告)日：1988-09-13
申请号：US947029
申请日：1986-12-29
申请人： Masahiro Kanai , Jun-Ichi Hanna , Isamu Shimizu
发明人： Masahiro Kanai , Jun-Ichi Hanna , Isamu Shimizu
IPC分类号： H01L31/04 , C23C16/22 , C23C16/30 , C23C16/44 , C23C16/452 , C23C16/50 , G03G5/08 , H01L21/205 , H01L21/336 , H01L29/78 , H01L29/786 , H01L21/20
CPC分类号： C23C16/452 , C23C16/22 , H01L21/02422 , H01L21/02425 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , Y10S438/935
摘要： A method for producing an electronic device having a multi-layer structure comprising one or more band gap controlled semiconductor thin layers formed on a substrate comprises forming at least one of said band gap controlled semiconductor thin layers according to the plasma CVD method and forming at least one of the other constituent layers according to the method comprising introducing a gaseous starting material for film formation and a gaseous halogenic oxidizing agent having the property of oxidizing said starting material into a reaction space to effect chemical contact therebetween to thereby form a plurality of precursors including a precursor in an excited state and transferring at least one of these precursors into a film forming space communicated with the reaction space as a feed source for the constituent element of the deposited film.
摘要翻译：一种制造具有多层结构的电子器件的方法，该多层结构包括在衬底上形成的一个或多个带隙控制半导体薄层，包括根据等离子体CVD方法形成至少一个所述带隙控制的半导体薄层，并形成至少根据包括引入用于成膜的气态起始材料和具有将所述原料氧化成反应空间的特性的气态卤素氧化剂的方法之一，以在其间进行化学接触从而形成多种前体，包括在激发态中的前体，并将这些前体中的至少一种转移到与反应空间连通的成膜空间中，作为沉积膜的构成元素的进料源。

10. 发明授权

US4818560A Method for preparation of multi-layer structure film 失效
标题翻译：多层结构薄膜的制备方法
公开(公告)号：US4818560A
公开(公告)日：1989-04-04
申请号：US945894
申请日：1986-12-24
申请人： Shunichi Ishihara , Jun-Ichi Hanna , Isamu Shimizu
发明人： Shunichi Ishihara , Jun-Ichi Hanna , Isamu Shimizu
IPC分类号： H01L31/04 , C23C16/22 , C23C16/452 , G03G5/082 , H01L21/02 , H01L21/205 , B05D3/06
CPC分类号： H01L21/02425 , C23C16/22 , C23C16/452 , H01L21/02381 , H01L21/02422 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/0262
摘要： A method for preparing a multi-layer structure film by forming a deposited film according to the chemical vapor depostion method comprises introducing a subjective starting material gas (A) which is the major flow rate component and an objective starting material gas (B) which is the minor flow rate component and hydrogen externally activated into a reaction space and controlling periodically the amount of said objective starting material gas (B) introduced to thereby form a deposited film with a multi-layer structure.
摘要翻译：通过根据化学气相沉积法形成沉积膜来制备多层结构膜的方法包括引入作为主流量分量的主要原料气体（A）和目标原料气体（B），其是小流量成分和氢外部活化成反应空间，并周期性地控制引入的所述目标原料气体（B）的量，从而形成具有多层结构的沉积膜。

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