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1. 发明授权

US06852632B2 Method of polishing a multi-layer substrate 有权
标题翻译：抛光多层基材的方法
公开(公告)号：US06852632B2
公开(公告)日：2005-02-08
申请号：US10353542
申请日：2003-01-29
申请人： Shumin Wang , Vlasta Brusic Kaufman , Steven K. Grumbine , Isaac K. Cherian , Renjie Zhou
发明人： Shumin Wang , Vlasta Brusic Kaufman , Steven K. Grumbine , Isaac K. Cherian , Renjie Zhou
IPC分类号： B24B57/02 , B24D11/00 , C09G1/02 , C09K3/14 , H01L21/304 , H01L21/302 , C09K13/00
CPC分类号： C09G1/02
摘要： The invention provides a method for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) contacting the first metal layer with a polishing system comprising a liquid carrier, at least one oxidizing agent, at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, wherein the polishing additive is selected from the group consisting of pyrophosphates, condensed phosphates, phosphonic acids and salts thereof, amines, amino alcohols, amides, imines, imino acids, nitriles, nitros, thiols thioesters, thioethers, carbothiolic acids, carbothionic acids, thiocarboxylic acids, thiosalicylic acids, and mixtures thereof, and a polishing pad and/or an abrasive, and (ii) polishing the first metal layer with the system until at least a portion of the first metal layer is removed from the substrate.
摘要翻译：本发明提供了一种用于抛光一层或多层多层基材的方法，所述多层基材包括第一金属层和第二层，其包括（i）使第一金属层与包括液体载体，至少一种氧化剂至少一种抛光添加剂，其增加系统抛光至少一层基材的速率，其中所述抛光添加剂选自焦磷酸盐，缩合磷酸盐，膦酸及其盐，胺，氨基醇，酰胺，亚胺，亚氨基酸，腈，亚硝基，硫醇硫酯，硫醚，硫代硫酸，碳硫酸，硫代羧酸，硫代水杨酸及其混合物，以及抛光垫和/或磨料，和（ii）层，直到第一金属层的至少一部分从衬底去除。

2. 发明授权

US06867140B2 Method of polishing a multi-layer substrate 有权
标题翻译：抛光多层基材的方法
公开(公告)号：US06867140B2
公开(公告)日：2005-03-15
申请号：US10353512
申请日：2003-01-29
申请人： Shumin Wang , Vlasta Brusic Kaufman , Steven K. Grumbine , Isaac K. Cherian
发明人： Shumin Wang , Vlasta Brusic Kaufman , Steven K. Grumbine , Isaac K. Cherian
IPC分类号： C09G1/02 , H01L21/321 , H01L21/302
CPC分类号： H01L21/3212 , C09G1/02
摘要： The invention provides a method for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) contacting the first metal layer with a polishing system comprising a liquid carrier, at least one oxidizing agent, at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, wherein the stopping compound is a cationically charged nitrogen containing compound selected from compounds comprising amines, imines, amides, imides, and mixtures thereof, and a polishing pad and/or an abrasive, and (ii) polishing the first metal layer with the system until at least a portion of the first metal layer is removed from the substrate.
摘要翻译：本发明提供了一种用于抛光一层或多层多层基材的方法，所述多层基材包括第一金属层和第二层，其包括（i）使第一金属层与包括液体载体，至少一种氧化剂至少一种抛光添加剂，其增加系统抛光至少一层基材的速率，至少一种具有至少约30:1的第一金属层的抛光选择性的停止化合物：第二层，其至少约30:1 停止化合物是选自包含胺，亚胺，酰胺，酰亚胺及其混合物的化合物的阳离子充氮的含氮化合物，以及抛光垫和/或研磨剂，和（ii）用系统抛光第一金属层直到至少从衬底去除第一金属层的一部分。

3. 发明授权

US06855266B1 Polishing system with stopping compound and method of its use 有权
标题翻译：具有停车复合抛光系统及其使用方法
公开(公告)号：US06855266B1
公开(公告)日：2005-02-15
申请号：US09636246
申请日：2000-08-10
申请人： Shumin Wang , Vlasta Brusic Kaufman , Steven K. Grumbine , Isaac K. Cherian
发明人： Shumin Wang , Vlasta Brusic Kaufman , Steven K. Grumbine , Isaac K. Cherian
IPC分类号： C09G1/02 , H01L21/321 , C09K13/00
CPC分类号： H01L21/3212 , C09G1/02
摘要： The invention provides a system for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, (iv) at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, and (v) a polishing pad and/or an abrasive. The invention also provides a composition comprising (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive (iv) at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, to be used with (v) a polishing pad and/or an abrasive.
摘要翻译：本发明提供一种用于抛光多层基底的一层或多层的系统，其包括第一金属层和第二层，所述第二层包括（i）液体载体，（ii）至少一种氧化剂，（iii）至少一种抛光添加剂，其增加系统抛光至少一层基材的速率，（iv）至少一种具有第一金属层的抛光选择性的停止化合物：至少约30:1的第二层，和（v ）抛光垫和/或磨料。本发明还提供一种组合物，其包含（i）液体载体，（ii）至少一种氧化剂，（iii）至少一种抛光添加剂（iv）至少一种具有第一金属层的抛光选择性的停止化合物：第二至少约30:1的层，与（v）抛光垫和/或研磨剂一起使用。

4. 发明授权

US06705926B2 Boron-containing polishing system and method 有权
公开(公告)号：US06705926B2
公开(公告)日：2004-03-16
申请号：US10033152
申请日：2001-10-24
申请人： Renjie Zhou , Steven K. Grumbine , Isaac K. Cherian
发明人： Renjie Zhou , Steven K. Grumbine , Isaac K. Cherian
IPC分类号： B24D334
CPC分类号： B24B37/24 , B24B37/245 , C09G1/02 , C09K3/1463 , H01L21/3212 , Y10T156/1051
摘要： The invention provides a chemical-mechanical polishing system comprising an abrasive, a carrier, and either boric acid, or a conjugate base thereof, wherein the boric acid and conjugate base are not present together in the polishing system in a sufficient amount to act as a pH buffer, or a water-soluble boron-containing compound, or salt thereof, that is not boric acid, and a method of polishing a substrate using the chemical-mechanical polishing system.

5. 发明授权

US07311856B2 Polymeric inhibitors for enhanced planarization 有权
标题翻译：用于增强平面化的聚合物抑制剂
公开(公告)号：US07311856B2
公开(公告)日：2007-12-25
申请号：US11093806
申请日：2005-03-30
申请人： Renjie Zhou , Steven K. Grumbine , Jian Zhang , Isaac K. Cherian
发明人： Renjie Zhou , Steven K. Grumbine , Jian Zhang , Isaac K. Cherian
IPC分类号： C09K13/00 , C09K13/06 , H01L21/302
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463 , C11D1/008 , C11D1/58 , C11D11/0047 , C11D17/049
摘要： The invention provides a chemical-mechanical polishing system comprising a polishing component, a surfactant, and a liquid carrier. The invention further provides a method of chemically-mechanically polishing a substrate with the polishing system.
摘要翻译：本发明提供一种包括抛光组分，表面活性剂和液体载体的化学机械抛光系统。本发明还提供了一种用抛光系统对衬底进行化学机械抛光的方法。

6. 发明授权

US06685540B2 Polishing pad comprising particles with a solid core and polymeric shell 失效
标题翻译：抛光垫包括具有固体芯和聚合物壳的颗粒
公开(公告)号：US06685540B2
公开(公告)日：2004-02-03
申请号：US09995025
申请日：2001-11-27
申请人： Isaac K. Cherian , Sriram P. Anjur , Steven K. Grumbine
发明人： Isaac K. Cherian , Sriram P. Anjur , Steven K. Grumbine
IPC分类号： B24B100
CPC分类号： B24B37/24 , B24D3/32
摘要： The invention provides a polishing pad comprising composite particles that comprise a solid core encapsulated by a polymeric shell material, wherein the solid core comprises a material that differs from the polymeric shell material, as well as a method of polishing a substrate with such a polishing pad.
摘要翻译：本发明提供了一种包括复合颗粒的抛光垫，其包括由聚合物壳材料包封的固体芯，其中所述固体芯包括与所述聚合物壳材料不同的材料，以及用这种抛光垫抛光基材的方法。

7. 发明授权

US08497209B2 Oxidation-stabilized CMP compositions and methods 有权
标题翻译：氧化稳定的CMP组合物和方法
公开(公告)号：US08497209B2
公开(公告)日：2013-07-30
申请号：US12764268
申请日：2010-04-21
申请人： Steven K. Grumbine , Renjie Zhou , Zhan Chen , Phillip W. Carter
发明人： Steven K. Grumbine , Renjie Zhou , Zhan Chen , Phillip W. Carter
IPC分类号： H01L21/302 , H01L21/321
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463 , C23F3/04 , C23F3/06
摘要： The present invention provides a chemical-mechanical polishing (CMP) composition comprising an amino compound, a radical-forming oxidizing agent, a radical trapping agent capable of inhibiting radical-induced oxidation of the amino compound, and an aqueous carrier therefore. The radical trapping agent is a hydroxyl-substituted polyunsaturated cyclic compound, a nitrogenous compound, or a combination thereof. Optionally, the composition comprises a metal oxide abrasive (e.g., silica, alumina, titania, ceria, zirconia, or a combination of two or more of the foregoing abrasives).
摘要翻译：本发明提供一种包含氨基化合物，自由基形成氧化剂，能够抑制氨基化合物自由基诱导氧化的自由基捕获剂的化学机械抛光（CMP）组合物，以及含水载体。自由基捕获剂是羟基取代的多不饱和环状化合物，含氮化合物或其组合。任选地，组合物包含金属氧化物研磨剂（例如二氧化硅，氧化铝，二氧化钛，二氧化铈，氧化锆，或两种或更多种前述研磨剂的组合）。

8. 发明授权

US07732393B2 Oxidation-stabilized CMP compositions and methods 失效
标题翻译：氧化稳定的CMP组合物和方法
公开(公告)号：US07732393B2
公开(公告)日：2010-06-08
申请号：US11384538
申请日：2006-03-20
申请人： Steven K. Grumbine , Renjie Zhou , Zhan Chen , Phillip W. Carter
发明人： Steven K. Grumbine , Renjie Zhou , Zhan Chen , Phillip W. Carter
IPC分类号： C09G1/00
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463 , C23F3/04 , C23F3/06
摘要： The present invention provides a chemical-mechanical polishing (CMP) composition comprising an amino compound, a radical-forming oxidizing agent, a radical trapping agent capable of inhibiting radical-induced oxidation of the amino compound, and an aqueous carrier therefore. The radical trapping agent is a hydroxyl-substituted polyunsaturated cyclic compound, a nitrogenous compound, or a combination thereof. Optionally, the composition comprises a metal oxide abrasive (e.g., silica, alumina, titania, ceria, zirconia, or a combination of two or more of the foregoing abrasives). The invention further provides a method of chemically-mechanically polishing a substrate with the CMP compositions, as well as a method of enhancing the shelf-life of CMP compositions containing an amine and a radical-forming oxidizing agent, in which a radical trapping agent is added to the CMP composition.
摘要翻译：本发明提供一种包含氨基化合物，自由基形成氧化剂，能够抑制氨基化合物自由基诱导氧化的自由基捕获剂的化学机械抛光（CMP）组合物，以及含水载体。自由基捕获剂是羟基取代的多不饱和环状化合物，含氮化合物或其组合。任选地，组合物包含金属氧化物研磨剂（例如二氧化硅，氧化铝，二氧化钛，二氧化铈，氧化锆，或两种或更多种前述研磨剂的组合）。本发明还提供了用CMP组合物对基材进行化学机械抛光的方法，以及提高含有胺和自由基形成氧化剂的CMP组合物的保存期限的方法，其中自由基捕获剂是添加到CMP组合物中。

9. 发明授权

US07001253B2 Boron-containing polishing system and method 失效
公开(公告)号：US07001253B2
公开(公告)日：2006-02-21
申请号：US10801316
申请日：2004-03-16
申请人： Renjie Zhou , Steven K. Grumbine , Issac K. Cherian
发明人： Renjie Zhou , Steven K. Grumbine , Issac K. Cherian
IPC分类号： B24B1/00
CPC分类号： B24B37/24 , B24B37/245 , C09G1/02 , C09K3/1463 , H01L21/3212 , Y10T156/1051
摘要： The invention provides a chemical-mechanical polishing system comprising an abrasive, a carrier, and either boric acid, or a conjugate base thereof, wherein the boric acid and conjugate base are not present together in the polishing system in a sufficient amount to act as a pH buffer, or a water-soluble boron-containing compound, or salt thereof, that is not boric acid, and a method of polishing a substrate using the chemical-mechanical polishing system.

10. 发明授权

US06592776B1 Polishing composition for metal CMP 有权
标题翻译：金属CMP抛光组合物
公开(公告)号：US06592776B1
公开(公告)日：2003-07-15
申请号：US09609882
申请日：2000-07-05
申请人： Shumin Wang , Steven K. Grumbine , Christopher C. Streinz , Eric W. G. Hoglund
发明人： Shumin Wang , Steven K. Grumbine , Christopher C. Streinz , Eric W. G. Hoglund
IPC分类号： C09K1300
CPC分类号： C09K3/1463 , C09G1/02 , C23F3/00 , H01L21/3212
摘要： Chemical mechanical polishing compositions and slurries comprising a film forming agent and at least one silane compound wherein the compositions are useful for polishing substrate features such as copper, tantalum, and tantalum nitride features.
摘要翻译：化学机械抛光组合物和包含成膜剂和至少一种硅烷化合物的浆料，其中组合物可用于抛光基底特征如铜，钽和氮化钽的特征。

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