专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5067989A Single crystal silicon 失效
标题翻译：单晶硅
公开(公告)号：US5067989A
公开(公告)日：1991-11-26
申请号：US570680
申请日：1990-08-22
申请人： Shuji Yokota , Hirotoshi Yamagishi
发明人： Shuji Yokota , Hirotoshi Yamagishi
IPC分类号： C30B15/00 , C30B29/06 , H01L21/322
CPC分类号： C30B29/06 , C30B15/00
摘要： Single crystal silicon for a substrate of semiconductor integrated circuits is disclosed. Cu, Fe, Ni and Cr are contained as impurities in a concentration smaller than 0.1 ppta, respectively, and the total content of the impurities is less than 0.4 ppta. Oxygen-induced stacking faults are reduced to an absolute minimum.

2. 发明授权

US5834322A Heat treatment of Si single crystal 失效
标题翻译： Si单晶热处理
公开(公告)号：US5834322A
公开(公告)日：1998-11-10
申请号：US916291
申请日：1997-08-22
申请人： Izumi Fusegawa , Hirotoshi Yamagishi , Nobuyoshi Fujimaki , Yukio Karasawa
发明人： Izumi Fusegawa , Hirotoshi Yamagishi , Nobuyoshi Fujimaki , Yukio Karasawa
IPC分类号： C30B33/02 , C30B15/00 , C30B29/06 , C30B33/00 , H01L21/322
CPC分类号： C30B15/00 , C30B29/06 , C30B33/00 , C30B33/02 , H01L21/3225
摘要： The method of this invention for heat treatment of a Si single crystal grown by the Czochralski method at a speed of pull of not less than 0.8 mm/min., characterized by heat-treating at a temperature in the range of from 1,150.degree. C. to 1,280.degree. C. a wafer cut out of the Si single crystal thereby producing a Si wafer excellent in oxide film dielectric breakdown voltage characteristic due to elimination of crystal defects. Consequently, this invention ensures production of LSI in a high yield.
摘要翻译：本发明的热处理方法，用于以不低于0.8mm /分钟的拉伸速度通过切克劳斯基法生长的Si单晶进行热处理，其特征在于在1150℃的温度下进行热处理。从Si单晶切出的晶片，由此产生由于消除晶体缺陷而具有优异的氧化膜介电击穿电压特性的Si晶片。因此，本发明能够高效率地制造LSI。

3. 发明授权

US5735951A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US5735951A
公开(公告)日：1998-04-07
申请号：US673590
申请日：1996-07-01
申请人： Eiichi Iino , Kiyotaka Takano , Masanori Kimura , Koji Mizuishi , Hirotoshi Yamagishi
发明人： Eiichi Iino , Kiyotaka Takano , Masanori Kimura , Koji Mizuishi , Hirotoshi Yamagishi
IPC分类号： C30B15/00 , C30B15/14 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B15/00 , C30B15/14 , Y10S117/90 , Y10T117/1032 , Y10T117/1068
摘要： A single crystal pulling apparatus which eliminates trouble caused by an isolation valve heated to a high temperature uses a heat insulation plate provided below the isolation valve. The heat insulation plate is operated synchronously with the opening or closing of the isolation valve. The heat insulation plate prevents hot gases from coming from the lower chamber from coming into direct contact with the isolation valve. The prevention of overheating of the isolation valve provides for smooth operation and growth of a good quality single crystal.
摘要翻译：消除由加热到高温的隔离阀引起的麻烦的单晶拉制装置使用设置在隔离阀下方的隔热板。绝热板与隔离阀的打开或关闭同步运行。隔热板防止来自下部室的热气体与隔离阀直接接触。防止隔离阀过热，提供良好的单晶的平稳运行和生长。

4. 发明授权

US5720809A Crucible for pulling silicon single crystal 失效
标题翻译：坩埚用于拉硅单晶
公开(公告)号：US5720809A
公开(公告)日：1998-02-24
申请号：US510436
申请日：1995-08-02
申请人： Eiichi Iino , Kiyotaka Takano , Izumi Fusegawa , Hirotoshi Yamagishi
发明人： Eiichi Iino , Kiyotaka Takano , Izumi Fusegawa , Hirotoshi Yamagishi
IPC分类号： C30B15/02 , C30B15/12 , C30B29/06
CPC分类号： C30B15/02 , C30B15/12 , Y10S117/90 , Y10T117/1052
摘要： A double-wall crucible is disclosed which is constructed by coaxially disposing a cylindrical partition wall in an outer crucible for holding a molten mass of silicon as a raw material and operated by heating the outer crucible and meanwhile supplying the raw material silicon to the gap between the outer crucible and the cylindrical partition wall and introducing the consequently produced molten mass of silicon to the interior of the cylindrical partition wall through a passage below the level of the molten mass of silicon interconnecting the outer crucible and the inner side of the cylindrical partition wall and meanwhile pulling a single crystal bar from the molten mass of silicon in the cylindrical partition wall. In this double-wall crucible, at least the cylindrical partition wall is formed of quartz glass having a hydroxyl group (OH group) content of not more than 30 ppm. In the crucible of this invention, the produced silicon single crystal enjoys improved quality and the operation of pulling enjoys enhanced yield because the cylindrical partition wall is softened or deformed only sparingly by the intense heat emanating from the molten mass of silicon. Since the cylindrical partition wall does not readily soften or deform on exposure to the heat, the partition wall can be fixed in place with a simple construction and the whole apparatus for the operation of pulling enjoys simplicity of construction and low cost of production.
摘要翻译：公开了一种双壁坩埚，其通过在外坩埚中同轴设置圆筒形分隔壁而构成，用于将硅熔体作为原料保持，并通过加热外坩埚进行操作，同时将原料硅供应到外坩埚和圆柱形分隔壁，并将由此产生的硅熔融物质通过下列通道引导到圆筒形分隔壁的内部，该通道位于将外坩埚与圆柱形分隔壁的内侧相互连接的熔融物质层的下方同时从圆柱形分隔壁的硅熔融体中拉出单晶棒。在该双壁坩埚中，至少圆筒形分隔壁由羟基（OH基）含量为30ppm以下的石英玻璃构成。在本发明的坩埚中，所生产的硅单晶具有改进的质量，并且由于由熔融硅团发出的强烈热量，圆柱形分隔壁被轻微软化或变形，所以拉伸操作具有提高的产量。由于圆柱形分隔壁在暴露于热量时不容易软化或变形，因此能够以简单的结构将分隔壁固定就位，并且用于拉动操作的整个装置具有简单的结构和低成本的生产。

5. 发明授权

US5534112A Method for testing electrical properties of silicon single crystal 失效
标题翻译：测试硅单晶电性能的方法
公开(公告)号：US5534112A
公开(公告)日：1996-07-09
申请号：US238722
申请日：1994-05-05
申请人： Izumi Fusegawa , Hirotoshi Yamagishi , Nobuyoshi Fujimaki , Yukio Karasawa
发明人： Izumi Fusegawa , Hirotoshi Yamagishi , Nobuyoshi Fujimaki , Yukio Karasawa
IPC分类号： H01L21/66 , G01N27/92 , G01R31/26 , G01R31/28 , H01L21/306
CPC分类号： G01N27/92 , G01R31/2831 , Y10S148/06 , Y10S148/162
摘要： The evaluation of the oxide film dielectric breakdown voltage of a silicon semiconductor single crystal is caried out by cutting a wafer out of the single crystal rod, etching the surface of the wafer with the mixed solution of hydrofluoric acid and nitric acid thereby relieving the wafer of strain, then etching the surface of the wafer with the mixed solution of K.sub.2 Cr.sub.2 O.sub.7, hydrofluoric acid, and water thereby inducing occurrence of pits and scale-like patterns on the surface, determining the density of the scale-like patterns, and computing the oxide film dielectric breakdown voltage by making use of the correlating between the density of scale-like patterns and the oxide film dielectric breakdown voltage. This fact established the method of this invention to be capable of effecting an evaluation equivalent to the evaluation of the oxide film dielectric breakdown voltage of a PW wafer prepared from the single crystal rod.
摘要翻译：通过从单晶棒切割晶片，对硅半导体单晶的氧化膜介电击穿电压进行评估，用氢氟酸和硝酸的混合溶液蚀刻晶片的表面，从而使晶片然后用K2Cr2O7，氢氟酸和水的混合溶液蚀刻晶片的表面，从而在表面上引起凹坑和鳞片状图案的发生，确定鳞片状图案的密度，并计算氧化膜通过利用鳞片状图案的密度与氧化膜介质击穿电压之间的相关性，介电击穿电压。这一事实确定了本发明的方法能够进行与从单晶棒制备的PW晶片的氧化膜介电击穿电压的评估相当的评估。

6. 发明授权

US5373805A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US5373805A
公开(公告)日：1994-12-20
申请号：US961764
申请日：1992-10-15
申请人： Kiyotaka Takano , Izumi Fusegawa , Hirotoshi Yamagishi
发明人： Kiyotaka Takano , Izumi Fusegawa , Hirotoshi Yamagishi
IPC分类号： C30B15/00 , C30B15/14 , C30B15/20
CPC分类号： C30B15/00 , C30B15/14 , Y10T117/1032 , Y10T117/1056
摘要： A single crystal pulling apparatus based on Czochralski technique having a conduit for continuously supplying granular polycrystal material to the crucible and a vertical purge tube suspended centrally into the heating chamber, wherein the purge tube is vertically shiftable; a heat shield ring is connected to the lower end of the purge tube, and a cylindrical quartz partition ring made of a quartz glass containing no bubbles is held vertically by the heat shield ring in a manner such that the lower end of the quartz partition ring comes substantially lower than the lower end of the purge tube so that, by being dipped in the polycrystal melt, the partition ring isolates the interior surface of the melt from the exterior surface of the melt, over which latter the granular polycrystal material is poured.
摘要翻译：一种基于切克劳斯基技术的单晶拉制装置，其具有用于向坩埚中连续供应颗粒状多晶材料的导管和悬浮在加热室中心的垂直吹扫管，其中，吹扫管是可垂直移动的; 隔热环连接到吹扫管的下端，并且由不含气泡的石英玻璃制成的圆柱形石英隔壁由隔热环垂直地保持，使得石英隔板环的下端基本上低于吹扫管的下端，使得通过浸入多晶熔体中，分隔环将熔体的内表面与熔体的外表面隔开，在其后倾倒颗粒状多晶材料。

7. 发明授权

US5126113A Apparatus for producing czochralski-grown single crystals 失效
公开(公告)号：US5126113A
公开(公告)日：1992-06-30
申请号：US677172
申请日：1991-03-29
申请人： Hirotoshi Yamagishi , Kouji Mizuishi , Fumihiko Hasegawa
发明人： Hirotoshi Yamagishi , Kouji Mizuishi , Fumihiko Hasegawa
IPC分类号： C30B15/30
CPC分类号： C30B15/30 , Y10S117/90 , Y10S117/911 , Y10T117/1032 , Y10T117/1072
摘要： An apparatus for producing a single crystal ingot grown by the Czochralski method includes a plurality of grip arms each having a grip finger engageable with a downwardly facing engagement step formed on an upper part of the single crystal, and a ring slidably fitted around a plurality of grip arms to hold the grip arms in a closed position in which the engagement step of the single crystal is firmly gripped by the grip fingers against detachment. The apparatus having such a ring is particularly advantageous when used for the production of a heavy single crystal ingot in which the grip arms are forced to spread apart by the weight of the single crystal ingot.

8. 发明授权

US06372040B1 Single crystal growth apparatus and single crystal growth method 失效
标题翻译：单晶生长装置和单晶生长法
公开(公告)号：US06372040B1
公开(公告)日：2002-04-16
申请号：US09647848
申请日：2000-10-06
申请人： Hirotoshi Yamagishi
发明人： Hirotoshi Yamagishi
IPC分类号： G30B1520
CPC分类号： C30B15/30 , Y10T117/1032 , Y10T117/1072
摘要： In an arrangement to grip lower part of a portion with larger diameter of single crystal formed by CZ method, the present invention provides an apparatus and a method for growing and pulling up the single crystal without causing deformation or rupture and under dislocation-free and stable condition even when the portion with larger diameter is at high temperature and when the single crystal rod has heavy weight of about 400 kg and large diameter. Under the condition that a material having Shore hardness of not less than 70, Vickers hardness of not more than 100, and tensile strength of not less than 400 MPa is used as a contact member which is used on a portion of gripping members in contact with lower part of the portion with larger diameter, and when minimum diameter of a constricted portion under the portion with larger diameter is set to 12 mm or more, temperature (° C.) is controlled to satisfy the relation: W≦−(4/3)T+1270 where W (kg) is the weight of the single crystal engaged and held, and T (° C.) is temperature of gripping part of the portion with larger diameter, and the temperature T is between 500° C. and 800° C. so that the portion with larger diameter of the single crystal can be gripped under the condition of high temperature and heavy weight.
摘要翻译：在通过CZ方法形成的具有较大直径单晶的部分的下部的布置中，本发明提供了一种用于在不引起变形或破裂并且在无位错和稳定的状态下生长和拉起单晶的装置和方法即使当直径较大的部分处于高温时，并且当单晶棒的重量大约为400kg和大直径时也是如此。在肖氏硬度不低于70，维氏硬度不大于100，抗拉强度不小于400MPa的材料的条件下，作为接触构件，其用于与夹持构件接触的部分具有较大直径的部分的下部，并且当具有较大直径的部分下方的收缩部分的最小直径设定为12mm以上时，控制温度（℃）以满足以下关系：W（kg）接合并保持的单晶的重量，T（℃）是具有较大直径的部分的夹持部分的温度，并且温度T在500℃和800℃之间，使得具有较大的部分的部分可以在高温高重的条件下抓住单晶的直径。

9. 发明授权

US6117234A Single crystal growing apparatus and single crystal growing method 失效
标题翻译：单晶生长装置和单晶生长方法
公开(公告)号：US6117234A
公开(公告)日：2000-09-12
申请号：US37512
申请日：1998-03-10
申请人： Hirotoshi Yamagishi
发明人： Hirotoshi Yamagishi
IPC分类号： C30B15/30 , C30B35/00
CPC分类号： C30B15/30 , Y10S117/911 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072
摘要： The object of the present invention is to provide an apparatus and a method for preventing dropping of a single crystal having large diameter and heavy weight in a chamber with reduced pressure and for pulling it in reliable and safe manner. After a seed crystal 24a is immersed in Si melt in a quartz crucible 14, the seed crystal is pulled up, and a neck portion 1a with small diameter is formed under the seed crystal 24a, and a spherical constricted portion 1b is formed under the neck portion 1a, whereby a tip 23a of a single crystal support 23 is opened so that it does not come into contact with the constricted portion 1b under pulling operation. When a second neck portion 1c under the constricted portion 1b is moved up to a standby position of the tip 23a of the single crystal support 23, rotation of an upper chamber 12 is started, and a rotating shaft 22 is rotated clockwise, and the tip 23a of the single crystal support 23 is closed to grip a site under the constricted portion 1b and the single crystal support 23 is moved up at the same rate as that of the wire 3 by rotating a ball screw shaft 21.
摘要翻译：本发明的目的是提供一种用于防止在减压室中具有大直径和重量的单晶的脱落并以可靠和安全的方式拉动的装置和方法。在石英坩埚14中将晶种24a浸入Si熔体中之后，将籽晶拉起，在籽晶24a的下方形成小直径的颈部1a，在颈部下方形成有球状的收缩部1b 从而使单晶支撑体23的尖端23a打开，从而在拉动操作下不与收缩部1b接触。当收缩部1b下方的第二颈部1c向上移动到单晶支撑体23的尖端23a的待机位置时，上部室12的旋转开始，旋转轴22顺时针旋转，关闭单晶支撑体23a以夹持收缩部分1b下方的部位，并且通过使滚珠丝杠轴21旋转，单晶支撑体23以与线材3相同的速率向上移动。

10. 发明授权

US5688319A Method for testing electrical properties of silicon single crystal 失效
标题翻译：测试硅单晶电性能的方法
公开(公告)号：US5688319A
公开(公告)日：1997-11-18
申请号：US796385
申请日：1991-11-22
申请人： Izumi Fusegawa , Hirotoshi Yamagishi , Nobuyoshi Fujimaki , Yukio Karasawa
发明人： Izumi Fusegawa , Hirotoshi Yamagishi , Nobuyoshi Fujimaki , Yukio Karasawa
IPC分类号： H01L21/66 , G01N27/92 , G01R31/26 , G01R31/28 , C30B15/00
CPC分类号： G01N27/92 , G01R31/2831 , Y10S148/06 , Y10S148/162
摘要： The evaluation of the oxide film dielectric breakdown voltage of a silicon semiconductor single crystal is caried out by cutting a wafer out of the single crystal rod, etching the surface of the wafer with the mixed solution of hydrofluoric acid and nitric acid thereby relieving the wafer of strain, then etching the surface of the wafer with the mixed solution of K.sub.2 Cr.sub.2 O.sub.7, hydrofluoric acid, and water therby inducing occurrence of pits and scale-like patterns on the surface, determining the density of the scale-like patterns, and computing the oxide film dielectric breakdown voltage by making use of the correlating between the density of scale-like patterns and the oxide film dielectric breakdown voltage. This fact established the method of this invention to be capable of effecting an evaluation equivalent to the evaluation of the oxide film dielectric breakdown voltage of a PW wafer prepared from the single crystal rod.
摘要翻译：通过从单晶棒切割晶片，对硅半导体单晶的氧化膜介电击穿电压进行评估，用氢氟酸和硝酸的混合溶液蚀刻晶片的表面，从而使晶片然后用K2Cr2O7，氢氟酸和水的混合溶液蚀刻晶片表面，从而在表面上引起凹坑和鳞片状图案的发生，确定鳞片状图案的密度，并计算氧化膜通过利用鳞片状图案的密度与氧化膜介质击穿电压之间的相关性，介电击穿电压。这一事实确定了本发明的方法能够进行与从单晶棒制备的PW晶片的氧化膜介电击穿电压的评估相当的评估。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式