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    • 1. 发明授权
    • Gas supply system for semiconductor manufacturing apparatus
    • 半导体制造装置用气体供给系统
    • US07862638B2
    • 2011-01-04
    • US12061982
    • 2008-04-03
    • Shuji MoriyaKen Nakao
    • Shuji MoriyaKen Nakao
    • B01D46/00H01L21/205
    • C23C16/4402C23C14/564Y10S55/15
    • A gas supply system according to the present invention comprises a gas filter disposed in a gas supply flow passage through which a gas is supplied to a semiconductor manufacturing apparatus and a metal component remover disposed in the gas supply flow passage downstream relative to the gas filter, which removes a volatile metal component contained in the gas flowing through the gas supply flow passage by liquefying the volatile metal component. The structure adopted in the gas supply system prevents entry of the volatile metal component, which cannot be eliminated through the gas filter, into the semiconductor manufacturing apparatus as the corrosive gas is supplied thereto by the gas supply flow passage.
    • 根据本发明的气体供给系统包括:气体过滤器,设置在气体供给流路中,通过该气体供给流路将气体供给到半导体制造装置,并且配置在气体供给流路中的金属成分去除器相对于气体过滤器下游, 其通过液化挥发性金属成分除去流过气体供给流路的气体中所含的挥发性金属成分。 气体供给系统中采用的结构防止了由气体供给流路供给腐蚀性气体而将不能通过气体过滤器排出的挥发性金属成分进入半导体制造装置。
    • 2. 发明申请
    • PLASMA PROCESS APPARATUS, PLASMA PROCESS METHOD, AND OBJECT PROCESSED BY THE PLASMA PROCESS METHOD
    • 等离子体处理装置,等离子体处理方法和等离子体处理方法的对象
    • US20090246542A1
    • 2009-10-01
    • US12410492
    • 2009-03-25
    • Ken NakaoShuji MoriyaHiroyuki Kousaka
    • Ken NakaoShuji MoriyaHiroyuki Kousaka
    • B32B15/04C23C16/513
    • H05H1/46H05H2001/4622H05H2240/10H05H2245/123Y10T428/31678
    • A disclosed plasma process apparatus includes an electromagnetic wave generator that generates electromagnetic waves; a vacuum vessel configured to be hermetically connected with an object to be processed, and evacuated to reduced pressures along with the object to be processed hermetically connected to the vacuum vessel; an electromagnetic wave guiding portion configured to guide the electromagnetic waves generated by the electromagnetic wave generator so that plasma is ignited in the vacuum vessel; a gas supplying portion configured to supply a process gas to the object to be processed hermetically connected to the vacuum vessel; an evacuation portion configured to evacuate the object to be processed hermetically connected to the vacuum vessel; and a voltage source configured to apply a predetermined voltage to the object to be processed hermetically connected to the vacuum vessel so that the plasma ignited in the vacuum vessel is guided to the object to be processed.
    • 所公开的等离子体处理装置包括产生电磁波的电磁波发生器; 真空容器,其构造成与待处理物体气密连接,并与被加工物体一起被抽空到与真空容器密封连接的被处理物体上; 电磁波引导部,被配置为引导由电磁波发生器产生的电磁波,使得等离子体在真空容器中点燃; 气体供给部构造成将处理气体供给到与真空容器密封连接的待加工对象物; 排气部,其构造成对与所述真空容器密封连接的待加工物体进行抽真空; 以及电压源,其构造成对与所述真空容器进行气密连接的待加工对象施加预定电压,使得在所述真空容器中点燃的等离子体被引导到被处理物体。
    • 3. 发明申请
    • Gas supply system and gas supply accumulation unit of semiconductor manufacturing apparatus
    • 半导体制造装置的供气系统和气体供应蓄积单元
    • US20080295963A1
    • 2008-12-04
    • US12068029
    • 2008-01-31
    • Shuji MoriyaKen Nakao
    • Shuji MoriyaKen Nakao
    • C23F1/08C23C16/00C23C14/34
    • C23C16/4402C23C16/4404C23C16/45561C30B25/14C30B31/16H01J37/3244Y02E60/34
    • A gas supply system 200 is a system that supplies a predetermined gas from a gas supply source 210 to a processing part 110 of a semiconductor manufacturing apparatus 100. The gas supply system 200 includes a gas supply passage apparatus 220 that is connected to the gas supply source 210 and the processing part 110. The gas supply passage apparatus 220 is provided with a plurality of fluid controllers (a hand valve 231, a pressure reducing valve 232, a manometer 233, a check valve 234, a first shutoff valve 235, a second shutoff valve 236, a massflow controller 237, and a gas filter 238), and passage structuring members (passage blocks 241 to 249) that are connected to positions between the respective fluid controllers 231 to 238 and form gas passages 221 to 229. The passage structuring members are made of a carbon material. Thus, when a corrosive gas is supplied to the processing part 110, mixture of a metal contaminant into a substrate to be processed W can be prevented as much as possible.
    • 气体供给系统200是将预定气体从气体供给源210供给到半导体制造装置100的处理部110的系统。气体供给系统200包括气体供给通道装置220,其与气体供给 源210和处理部110.气体供给通道装置220设置有多个流体控制器(手动阀231,减压阀232,压力计233,止回阀234,第一截止阀235, 第二截止阀236,质量流量控制器237和气体过滤器238)以及与各个流体控制器231至238之间的位置连接并形成气体通道221至229的通道结构构件(通道块241至249)。 通道结构构件由碳材料制成。 因此,当向处理部110供给腐蚀性气体时,可以尽可能地防止金属污染物混入待处理基板W。
    • 5. 发明申请
    • PROCESSING APPARATUS
    • 加工设备
    • US20120055402A1
    • 2012-03-08
    • US13262005
    • 2010-03-30
    • Shuji MoriyaToyohiko ShindoNoboru Tamura
    • Shuji MoriyaToyohiko ShindoNoboru Tamura
    • C23C16/455C23C16/48
    • C23C16/4402C23C16/448C23C16/4488C23C16/452C23C16/45561C23C16/52
    • A processing apparatus includes a gas supply passage for supplying a corrosive gas having a halogen, a part of the passage being made of a metal; a stabilization reaction unit which has an energy generator for supplying light energy or heat energy to the corrosive gas that has passed through the metallic part of the gas supply passage and/or has an obstacle configured to apply a collision energy to the corrosive gas that has passed through the metallic part of the gas supply passage, the collision energy being generated from a collision between the obstacle and said corrosive gas. A reaction for stabilizing a compound containing the metal and the halogen contained in the corrosive gas takes place by means of at least one of the light energy, heat energy, and collision energy; and a trapping unit which traps the compound stabilized in the stabilization reaction unit.
    • 一种处理装置,包括用于供给具有卤素的腐蚀性气体的气体供给通道,所述通道的一部分由金属制成; 稳定化反应单元,其具有能量发生器,用于向已经通过气体供给通道的金属部分的腐蚀性气体提供光能或热能,和/或具有构造成将碰撞能量施加到具有 通过供气通道的金属部分,碰撞能量是由障碍物和腐蚀性气体之间的碰撞产生的。 通过光能,热能和碰撞能量中的至少一种,使包含在腐蚀性气体中的金属和卤素的化合物稳定化的反应; 以及捕获稳定化反应单元中稳定化合物的捕集单元。
    • 6. 发明授权
    • Semiconductor fabrication system, and flow rate correction method and program for semiconductor fabrication system
    • 半导体制造系统,半导体制造系统的流量校正方法和程序
    • US07682843B2
    • 2010-03-23
    • US11817104
    • 2006-06-28
    • Shuji MoriyaTsuneyuki OkabeHiroyuki EbiTetsuo ShimizuHitoshi Kitagawa
    • Shuji MoriyaTsuneyuki OkabeHiroyuki EbiTetsuo ShimizuHitoshi Kitagawa
    • H01L21/66
    • G05D7/0658C23C16/455C23C16/45561C23C16/52
    • Zero point shift based on thermal siphon effect occurring actually when a substrate is processed is detected accurately and corrected suitably. The semiconductor fabrication system comprises a gas supply passage (210) for supplying gas into a heat treatment unit (110), an MFC (240) for comparing an output voltage from a detecting unit for detecting the gas flow rate of the gas supply passage with a set voltage corresponding to a preset flow rate and controlling the gas flow rate of the gas supply passage to the set flow rate, and a control unit (300). The control unit replaces gas in the MFC by gas which is to be used at least for processing a substrate before the substrate is processed, detects the output voltage from the MFC under a state where valves (230, 250) provided in the upstream and the downstream of the MFC are closed and stores the detected output voltage in a storage unit, corrects the set voltage corresponding to the flow rate of gas to be used for processing the substrate based on the output voltage from the MFC stored in the storage unit at the time of processing the substrate, and sets the corrected set voltage in the MFC.
    • 基于处理基板时实际发生的热虹吸效应的零点偏移被准确地检测并适当地校正。 半导体制造系统包括用于将气体供给到热处理单元(110)中的气体供给通道(210),MFC(240),用于将用于检测气体供应通道的气体流量的检测单元的输出电压与 与设定的流量对应的设定电压,将气体供给通路的气体流量控制为设定的流量,以及控制单元(300)。 控制单元通过在基板被处理之前至少用于处理基板的气体来替换MFC中的气体,在设置在上游的阀(230,250)的状态下检测来自MFC的输出电压, 关闭MFC的下游并将检测到的输出电压存储在存储单元中,基于来自存储在存储单元中的MFC的输出电压来校正与用于处理衬底的气体的流量对应的设定电压 处理基板的时间,并将校正的设定电压设置在MFC中。
    • 9. 发明申请
    • DEVELOPING APPARATUS
    • 开发设备
    • US20060171745A1
    • 2006-08-03
    • US11275729
    • 2006-01-26
    • Kazunari HagiwaraKenya OgawaShuji MoriyaNaoto KichijimaYasushi ShimizuKoichi Okuda
    • Kazunari HagiwaraKenya OgawaShuji MoriyaNaoto KichijimaYasushi ShimizuKoichi Okuda
    • G03G15/09
    • G03G15/0812G03G15/0914G03G2215/0634
    • A developing apparatus having a developing sleeve provided with an elastic layer on its surface, and for developing an electrostatic image formed on an image bearing member with a mono-component magnetic toner having a mean degree of circularity of 0.965 or greater, a magnet provided in the developing sleeve, and a blade for regulating the amount of the developer carried on the developing sleeve satisfies the expressions |Br|/|B|≧0.5 and Nsb/(Bs×R)≦0.5, where B [G] is magnetic flux density formed on the surface of the developing sleeve by the magnet at the contact position between the blade and the developing sleeve, Nsb [mm] is the contact width between the blade and the developing sleeve, Br [G] is a component of magnetic flux density B [G] in a direction perpendicular to the surface of the developing sleeve, Bs [rad] is a half value width of the perpendicular component of the magnetic flux density of the nearest one of the magnetic poles of the magnet to the contact position on the surface of the developing sleeve, and R [mm] is the radius of the developing sleeve.
    • 一种显影装置,具有在其表面上设置有弹性层的显影套筒,并且利用平均圆形度为0.965以上的单组分磁性调色剂在图像承载部件上形成静电图像,所述静电图像设置在 显影套筒和用于调节显影套筒上承载的显影剂量的刀片满足表达式| Br | / | B |> = 0.5和Nsb /(BsxR)<= 0.5,其中B [G]是磁通量 通过磁体在叶片和显影套筒之间的接触位置处形成在显影套筒的表面上的密度Nsb [mm]是刀片和显影套筒之间的接触宽度,Br [G]是磁通量的分量 密度B [G]在垂直于显影套筒表面的方向上,Bs [rad]是磁体的最接近的一个磁极与接触位置的磁通密度的垂直分量的半值宽度 在上 显影套筒的表面,R [mm]是显影套筒的半径。