会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Light scanning device and image forming device
    • 光扫描装置和成像装置
    • US08665501B2
    • 2014-03-04
    • US13467476
    • 2012-05-09
    • Takeshi ShimizuShuichi Wakabayashi
    • Takeshi ShimizuShuichi Wakabayashi
    • H04N1/04
    • G02B26/101H04N2201/04713H04N2201/04739
    • A light scanning device includes a movable section having a light reflecting section adapted to reflect light, oscillating around an oscillation axis, and having a variable magnitude of a maximum deflection angle of the oscillating, and a detection section adapted to detect the maximum deflection angle of the movable section, and the detection section includes a light source adapted to emit light to the light reflecting section, a light receiving section adapted to receive reflected light, which is the light emitted from the light source and then reflected by the light reflecting section, and a displacement driving section adapted to change a position of the light source in accordance with the maximum deflection angle of the movable section.
    • 一种光扫描装置,包括具有光反射部分的可动部分,所述光反射部分适于反射围绕振荡轴摆动的光,并且具有可变幅度的振荡的最大偏转角;以及检测部分,其适于检测最大偏转角 所述可动部和所述检测部包括适于向所述光反射部发射光的光源,适于接收作为从所述光源发射的光然后被所述光反射部反射的反射光的受光部, 以及位移驱动部,其适于根据所述可动部的最大偏转角来改变所述光源的位置。
    • 4. 发明授权
    • Vibration sensor and method for manufacturing the vibration sensor
    • 振动传感器及制造振动传感器的方法
    • US07943413B2
    • 2011-05-17
    • US12440127
    • 2007-07-20
    • Takashi KasaiYasuhiro HorimotoFumihito KatoMasaki MunechikaShuichi WakabayashiToshiyuki TakahashiMasayuki Inuga
    • Takashi KasaiYasuhiro HorimotoFumihito KatoMasaki MunechikaShuichi WakabayashiToshiyuki TakahashiMasayuki Inuga
    • H01L29/84H01L21/28
    • B81C1/00182B81B2201/0257B81B2201/0285B81B2203/0127B81B2203/0353H04R19/005H04R19/04
    • A method for manufacturing a vibration sensor including forming a sacrifice layer at one part of a front surface of a semiconductor substrate of monocrystalline silicon with a material isotropically etched by an etchant for etching the semiconductor substrate, forming a thin film protective film with a material having resistance to the etchant on the sacrifice layer and the front surface of the semiconductor substrate at a periphery of the sacrifice layer, forming a thin film of monocrystalline silicon, polycrystalline silicon, or amorphous silicon on an upper side of the sacrifice layer, opening a backside etching window in a back surface protective film having resistance to the etchant for etching the semiconductor substrate formed on a back surface of the semiconductor substrate, forming a through-hole in the semiconductor substrate by etching the semiconductor substrate anisotropically by using crystal-oriented etching by applying the etchant from the back surface window, then etching the sacrifice layer isotropically by the etchant after the etchant reaches the front surface of the semiconductor substrate, and then etching the semiconductor substrate anisotropically by using crystal-oriented etching from a front side by the etchant spread to a space formed after the sacrifice layer is removed, and forming a holder for supporting the thin film on an upper surface of the semiconductor substrate by removing the thin film protective film partially.
    • 一种制造振动传感器的方法,包括在单晶硅的半导体衬底的前表面的一个部分处形成牺牲层,所述材料用蚀刻剂蚀刻半导体衬底的各向同性蚀刻材料,形成具有材料的薄膜保护膜 在牺牲层周围的牺牲层和半导体衬底的前表面上的蚀刻剂的耐受性,在牺牲层的上侧形成单晶硅,多晶硅或非晶硅的薄膜,打开背面 在形成在半导体衬底的背面上的用于蚀刻半导体衬底的蚀刻剂的表面保护膜的蚀刻窗口中,通过使用晶体取向的蚀刻通过蚀刻半导体衬底各向异性地在半导体衬底中形成通孔 应用来自后表面窗口的蚀刻剂,然后蚀刻 在蚀刻剂到达半导体衬底的前表面之后,通过蚀刻剂各向同性地施加牺牲层,然后通过使用晶体取向的蚀刻从蚀刻剂扩散到牺牲层之后形成的空间来各向异性蚀刻半导体衬底 并且通过部分去除薄膜保护膜来形成用于在半导体衬底的上表面上支撑薄膜的保持器。
    • 6. 发明申请
    • VIBRATION SENSOR AND METHOD FOR MANUFACTURING THE VIBRATION SENSOR
    • 振动传感器及制造振动传感器的方法
    • US20100038734A1
    • 2010-02-18
    • US12440127
    • 2007-07-20
    • Takashi KasaiYasuhiro HorimotoFumihito KatoMasaki MunechikaShuichi WakabayashiToshiyuki TakahashiMasayuki Inuga
    • Takashi KasaiYasuhiro HorimotoFumihito KatoMasaki MunechikaShuichi WakabayashiToshiyuki TakahashiMasayuki Inuga
    • H01L29/84H01L21/28
    • B81C1/00182B81B2201/0257B81B2201/0285B81B2203/0127B81B2203/0353H04R19/005H04R19/04
    • A method for manufacturing a vibration sensor including forming a sacrifice layer at one part of a front surface of a semiconductor substrate of monocrystalline silicon with a material isotropically etched by an etchant for etching the semiconductor substrate, forming a thin film protective film with a material having resistance to the etchant on the sacrifice layer and the front surface of the semiconductor substrate at a periphery of the sacrifice layer, forming a thin film of monocrystalline silicon, polycrystalline silicon, or amorphous silicon on an upper side of the sacrifice layer, opening a backside etching window in a back surface protective film having resistance to the etchant for etching the semiconductor substrate formed on a back surface of the semiconductor substrate, forming a through-hole in the semiconductor substrate by etching the semiconductor substrate anisotropically by using crystal-oriented etching by applying the etchant from the back surface window, then etching the sacrifice layer isotropically by the etchant after the etchant reaches the front surface of the semiconductor substrate, and then etching the semiconductor substrate anisotropically by using crystal-oriented etching from a front side by the etchant spread to a space formed after the sacrifice layer is removed, and forming a holder for supporting the thin film on an upper surface of the semiconductor substrate by removing the thin film protective film partially.
    • 一种制造振动传感器的方法,包括在单晶硅的半导体衬底的前表面的一个部分处形成牺牲层,所述材料用蚀刻剂蚀刻半导体衬底的各向同性蚀刻材料,形成具有材料的薄膜保护膜 在牺牲层周围的牺牲层和半导体衬底的前表面上的蚀刻剂的耐受性,在牺牲层的上侧形成单晶硅,多晶硅或非晶硅的薄膜,打开背面 在形成在半导体衬底的背面上的用于蚀刻半导体衬底的蚀刻剂的表面保护膜的蚀刻窗口中,通过使用晶体取向的蚀刻通过蚀刻半导体衬底各向异性地在半导体衬底中形成通孔 应用来自后表面窗口的蚀刻剂,然后蚀刻 在蚀刻剂到达半导体衬底的前表面之后,通过蚀刻剂各向同性地施加牺牲层,然后通过使用晶体取向的蚀刻从蚀刻剂扩散到牺牲层之后形成的空间来各向异性蚀刻半导体衬底 并且通过部分去除薄膜保护膜来形成用于在半导体衬底的上表面上支撑薄膜的保持器。