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1. 发明授权

US08300857B2 Acoustic sensor 有权
标题翻译：声传感器
公开(公告)号：US08300857B2
公开(公告)日：2012-10-30
申请号：US13016436
申请日：2011-01-28
申请人： Eiichi Omura , Naoshi Ozawa , Shuichi Wakabayashi
发明人： Eiichi Omura , Naoshi Ozawa , Shuichi Wakabayashi
IPC分类号： H04R25/00
CPC分类号： B81C1/00182 , B81B2201/0257 , B81B2203/0127 , B81C2203/031 , B81C2203/036 , H01L2924/16151 , H01L2924/16152 , H04R19/005 , H04R2201/003
摘要： An acoustic sensing element has a substrate that includes a back chamber, a vibration electrode plate that is provided in a surface of the substrate while being opposite an upper surface opening of the back chamber, and a fixed electrode plate that is provided opposite the vibration electrode plate, an acoustic hole being made in the fixed electrode plate. The acoustic sensing element outputs an electric signal based on an electrostatic capacitance change generated between the vibration electrode plate and the fixed electrode plate by a displacement of the vibration electrode plate. A lower surface of the back chamber is closed into a pouched shape by the substrate.
摘要翻译：声学传感元件具有基板，该基板包括后室，设置在基板的表面中并与后室的上表面开口相对的振动电极板，以及与振动电极相对设置的固定电极板在固定电极板上形成声孔。声学传感元件通过振动电极板的位移，基于在振动电极板和固定电极板之间产生的静电电容变化而输出电信号。后室的下表面通过基底封闭成袋状。

2. 发明申请

US20110204745A1 ACOUSTIC SENSOR 有权
标题翻译：声学传感器
公开(公告)号：US20110204745A1
公开(公告)日：2011-08-25
申请号：US13016436
申请日：2011-01-28
申请人： Eiichi Omura , Naoshi Ozawa , Shuichi Wakabayashi
发明人： Eiichi Omura , Naoshi Ozawa , Shuichi Wakabayashi
IPC分类号： H02N1/08
CPC分类号： B81C1/00182 , B81B2201/0257 , B81B2203/0127 , B81C2203/031 , B81C2203/036 , H01L2924/16151 , H01L2924/16152 , H04R19/005 , H04R2201/003
摘要： An acoustic sensing element has a substrate that includes a back chamber, a vibration electrode plate that is provided in a surface of the substrate while being opposite an upper surface opening of the back chamber, and a fixed electrode plate that is provided opposite the vibration electrode plate, an acoustic hole being made in the fixed electrode plate. The acoustic sensing element outputs an electric signal based on an electrostatic capacitance change generated between the vibration electrode plate and the fixed electrode plate by a displacement of the vibration electrode plate. A lower surface of the back chamber is closed into a pouched shape by the substrate.
摘要翻译：声学传感元件具有基板，该基板包括后室，设置在基板的表面中并与后室的上表面开口相对的振动电极板，以及与振动电极相对设置的固定电极板在固定电极板上形成声孔。声学传感元件通过振动电极板的位移，基于在振动电极板和固定电极板之间产生的静电电容变化而输出电信号。后室的下表面通过基底封闭成袋状。

3. 发明申请

US20090195644A1 IMAGE FORMING APPARATUS 有权
标题翻译：图像形成装置
公开(公告)号：US20090195644A1
公开(公告)日：2009-08-06
申请号：US12362788
申请日：2009-01-30
申请人： Shuichi WAKABAYASHI , Norio NAKAMURA
发明人： Shuichi WAKABAYASHI , Norio NAKAMURA
IPC分类号： H04N13/04 , H04N9/31
CPC分类号： G02B26/085 , G02B26/101 , G03B21/00 , G09G3/02 , G09G3/2003 , H04N9/3129 , H04N9/3179 , H04N9/3185 , H04N21/478
摘要： An image forming apparatus that can form an image composed of pixels on an image forming plane such that, by suppressing density of the pixels in each portion of the image to be formed on the image forming plane from becoming ununiformity, a natural image free from distortion or deflection is observed regardless of a shape of the image forming plane even in the case where the image forming plane is viewed at any position are provided. The image forming apparatus forms includes a light emitting unit that emits the light; a light scanning unit having at least one actuator in which a movable plate having a light reflector that reflects the light emitted from the light emitting unit is rotatably provided around one rotation axis or two rotation axes which are orthogonal to each other, the actuator irradiating and scanning the light reflected on the light reflector onto the image forming plane by rotation of the movable plate; a drive pattern generating unit that generates a drive pattern of the light emitting unit, the drive pattern by which the light emitting unit can emit the light with such timing and emission time that suppress density of the pixels in each portion of the image to be formed on the image forming plane from becoming ununiformity, wherein the ununiformity in the density of the pixels would be generated due to differences between incident angles of the light to be irradiated with respect to portions of the image forming plane corresponding to the respective pixels or differences between distances from the light emitting unit to the respective portions of the image forming plane; and a controlling unit that controls operation of the light emitting unit based on the drive pattern generated by the drive pattern generating unit.
摘要翻译：一种图像形成装置，其可以形成由图像形成平面上的像素构成的图像，使得通过抑制在图像形成平面上形成的图像的每个部分中的像素的浓度变得不均匀，自然图像没有失真或者即使在设置了在任何位置观看图像形成平面的情况下也可以观察到偏转，而与图像形成平面的形状无关。图像形成装置形成包括发光的发光单元; 具有至少一个致动器的光扫描单元，其中具有反射从发光单元发射的光的光反射器的可动板围绕彼此正交的一个旋转轴或两个旋转轴可旋转地设置，致动器照射和通过可移动板的旋转将在光反射器上反射的光线扫描到图像形成平面上; 驱动图案生成单元，其生成发光单元的驱动图案，所述驱动图案，所述发光单元能够以抑制要形成的图像的每个部分中的像素的定时和发射时间发光; 在图像形成平面上变得不均匀，其中由于要照射的光的入射角相对于与各个像素相对应的图像形成平面的部分之间的差异，将产生像素密度的不均匀性，或者，从发光单元到图像形成平面的各个部分的距离; 以及控制单元，其基于由驱动模式生成单元生成的驱动模式来控制发光单元的动作。

4. 发明授权

US07569413B2 Method of forming thin film structure with tensile and compressed polysilicon layers 有权
标题翻译：用拉伸和压缩多晶硅层形成薄膜结构的方法
公开(公告)号：US07569413B2
公开(公告)日：2009-08-04
申请号：US11703444
申请日：2007-02-07
申请人： Takashi Kasai , Shuichi Wakabayashi
发明人： Takashi Kasai , Shuichi Wakabayashi
IPC分类号： H01L21/00 , H01L21/425
CPC分类号： B81B3/0072 , B81C2201/0167 , C23C16/24 , C23C16/56
摘要： A method for forming a thin film structure, which has small tensile stress due to controlled mechanical stress, and is made to be conductive, is provided. A lower film including polysilicon thin film is formed on a substrate such as Si substrate, then an impurity such as P is doped into the lower film and thermally diffused, thereby the lower film is made conductive. Then, an upper film is deposited on the lower film, the upper film including a polysilicon thin film that is simply deposited and not made to be conductive. The upper film has a tensile stress in an approximately the same level as compressive stress of the lower film, and a thin film structure as a whole, the structure including the lower film and the upper film, is adjusted to have small tensile stress.
摘要翻译：提供一种形成薄膜结构的方法，该薄膜结构由于受到机械应力的控制而具有较小的拉伸应力并且被制成导电性。在诸如Si衬底的衬底上形成包括多晶硅薄膜的下部膜，然后将诸如P的杂质掺杂到下部膜中并进行热扩散，从而使下部膜导电。然后，上膜被沉积在下膜上，上膜包括简单沉积并不导电的多晶硅薄膜。上部膜具有与下部膜的压缩应力大致相同的拉伸应力，整体上由薄膜结构体构成，包括下部膜和上部膜的结构被调整为具有较小的拉伸应力。

5. 发明申请

US20070232443A1 Speed change control device for automatic transmission and control method thereof 有权
标题翻译：用于自动变速器的变速控制装置及其控制方法
公开(公告)号：US20070232443A1
公开(公告)日：2007-10-04
申请号：US11727706
申请日：2007-03-28
申请人： Yusuke Kimura , Atsufumi Kobayashi , Tatsuo Ochiai , Shuichi Wakabayashi , Akihiro Makiyama , Ryoji Kadono
发明人： Yusuke Kimura , Atsufumi Kobayashi , Tatsuo Ochiai , Shuichi Wakabayashi , Akihiro Makiyama , Ryoji Kadono
IPC分类号： F16H61/662
CPC分类号： F16H61/66259 , F16H59/20 , F16H59/42 , F16H61/16 , F16H2061/6617 , Y10T477/62427 , Y10T477/6934 , Y10T477/693675
摘要： A speed change control device for an automatic transmission according to this invention determines whether or not a request to downshift a gear position of the transmission exists during traveling in a manual speed change mode (S1, S2), and calculates an input shaft rotation speed of the transmission following a downshift based on the downshift request (S4). When it is determined that the calculated rotation speed is higher than a rotation speed limit value (S5), the speed change control device performs a downshift to a gear position at which the input shaft rotation speed of the transmission is lower than the calculated rotation speed (S6, S8).
摘要翻译：根据本发明的用于自动变速器的变速控制装置确定在手动变速模式（S 1，S 2）的行驶期间是否存在变速档的降档请求，并计算输入轴旋转基于降档请求的降档后的传输速度（S 4）。当确定计算出的转速高于转速极限值（S 5）时，变速控制装置对变速器的输入轴转速低于所计算转速的档位进行降档速度（S 6，S 8）。

6. 发明申请

US20070196946A1 Method for forming thin film structure and thin film structure, oscillation sensor, pressure sensor, and acceleration sensor 有权
标题翻译：用于形成薄膜结构和薄膜结构的方法，振荡传感器，压力传感器和加速度传感器
公开(公告)号：US20070196946A1
公开(公告)日：2007-08-23
申请号：US11703444
申请日：2007-02-07
申请人： Takashi Kasai , Shuichi Wakabayashi
发明人： Takashi Kasai , Shuichi Wakabayashi
IPC分类号： H01L21/00
CPC分类号： B81B3/0072 , B81C2201/0167 , C23C16/24 , C23C16/56
摘要： A method for forming a thin film structure, which has small tensile stress due to controlled mechanical stress, and is made to be conductive, is provided. A lower film including polysilicon thin film is formed on a substrate such as Si substrate, then an impurity such as P is doped into the lower film and thermally diffused, thereby the lower film is made conductive. Then, an upper film is deposited on the lower film, the upper film including a polysilicon thin film that is simply deposited and not made to be conductive. The upper film has a tensile stress in an approximately the same level as compressive stress of the lower film, and a thin film structure as a whole, the structure including the lower film and the upper film, is adjusted to have small tensile stress.
摘要翻译：提供一种形成薄膜结构的方法，该薄膜结构由于受到机械应力的控制而具有较小的拉伸应力并且被制成导电性。在诸如Si衬底的衬底上形成包括多晶硅薄膜的下部膜，然后将诸如P的杂质掺杂到下部膜中并进行热扩散，从而使下部膜导电。然后，上膜被沉积在下膜上，上膜包括简单沉积并不导电的多晶硅薄膜。上部膜具有与下部膜的压缩应力大致相同的拉伸应力，整体上由薄膜结构体构成，包括下部膜和上部膜的结构被调整为具有较小的拉伸应力。

7. 发明申请

US20120257262A1 LIGHT SCANNING DEVICE AND IMAGE FORMATION APPARATUS 有权
标题翻译：光扫描装置和图像形成装置
公开(公告)号：US20120257262A1
公开(公告)日：2012-10-11
申请号：US13442264
申请日：2012-04-09
申请人： Takeshi SHIMIZU , Shuichi WAKABAYASHI
发明人： Takeshi SHIMIZU , Shuichi WAKABAYASHI
IPC分类号： H04N1/04 , G01B11/26
CPC分类号： G02B26/101 , H04N2201/04713 , H04N2201/04739
摘要： A light scanning device includes: a movable section which has a light reflection section reflecting light and oscillates around an oscillating axis and in which a maximum deflection angle thereof is variable; and a detection section which detects the maximum deflection angle of the movable section, wherein the detection section includes a light source which irradiates light toward the light reflection section, a light-receiving section which receives reflected light of the light from the light source, reflected by the light reflection section, and a displacement drive section which changes a position of the light-receiving section in accordance with the maximum deflection angle of the movable section.
摘要翻译：一种光扫描装置，包括：可动部，其具有反射光的光反射部，并且围绕振荡轴摆动，其最大偏转角可变; 以及检测部，其检测所述可动部的最大偏转角，其中，所述检测部包括向所述光反射部照射光的光源，受光部，其接收来自所述光源的光的反射光，反射以及根据可动部的最大偏转角改变受光部的位置的位移驱动部。

8. 发明申请

US20110205456A1 IMAGE FORMING APPARATUS AND REAR PROJECTION DISPLAY APPARATUS 有权
标题翻译：图像形成装置和后期投影显示装置
公开(公告)号：US20110205456A1
公开(公告)日：2011-08-25
申请号：US12968414
申请日：2010-12-15
申请人： Yasushi MIZOGUCHI , Hidekazu KOBAYASHI , Shuichi WAKABAYASHI , Taisuke YAMAUCHI , Takashi TAKEDA
发明人： Yasushi MIZOGUCHI , Hidekazu KOBAYASHI , Shuichi WAKABAYASHI , Taisuke YAMAUCHI , Takashi TAKEDA
IPC分类号： G02F1/1335 , G02F1/01 , G02B26/10
CPC分类号： G02B27/104 , G02B5/0236 , G02B5/0263 , G02B5/0289 , G02B26/085 , G02B26/101 , G02B27/145 , G02F1/133362 , G02F1/1334 , G02F1/135
摘要： An image forming apparatus includes: a screen having a display surface; and a projector that renders an image by scanning light on the display screen, wherein the screen selects, independently in respective regions of the display surface, a light transmission state in which the light is transmitted and a light diffusion state in which the light is diffused, the screen being configured such that the region where address light is irradiated is in the light diffusion state and the region where the address light is not irradiated is in the light transmission state, and the projector scans the address light on the display surface such that an area of the display surface corresponding to an image displayed on the display surface changes to the light diffusion state.
摘要翻译：一种图像形成装置，包括：具有显示面的屏幕; 以及投影仪，其通过在所述显示屏幕上扫描光而呈现图像，其中所述屏幕独立地在所述显示表面的各个区域中选择所述光被透射的透光状态和所述光被漫射的光扩散状态所述屏幕被配置为使得所述地址光被照射的区域处于所述光漫射状态，并且所述地址光未被照射的区域处于所述透光状态，并且所述投影仪扫描所述显示表面上的地址灯，使得与显示面上显示的图像对应的显示面的区域变为光扩散状态。

9. 发明授权

US07943413B2 Vibration sensor and method for manufacturing the vibration sensor 有权
标题翻译：振动传感器及制造振动传感器的方法
公开(公告)号：US07943413B2
公开(公告)日：2011-05-17
申请号：US12440127
申请日：2007-07-20
申请人： Takashi Kasai , Yasuhiro Horimoto , Fumihito Kato , Masaki Munechika , Shuichi Wakabayashi , Toshiyuki Takahashi , Masayuki Inuga
发明人： Takashi Kasai , Yasuhiro Horimoto , Fumihito Kato , Masaki Munechika , Shuichi Wakabayashi , Toshiyuki Takahashi , Masayuki Inuga
IPC分类号： H01L29/84 , H01L21/28
CPC分类号： B81C1/00182 , B81B2201/0257 , B81B2201/0285 , B81B2203/0127 , B81B2203/0353 , H04R19/005 , H04R19/04
摘要： A method for manufacturing a vibration sensor including forming a sacrifice layer at one part of a front surface of a semiconductor substrate of monocrystalline silicon with a material isotropically etched by an etchant for etching the semiconductor substrate, forming a thin film protective film with a material having resistance to the etchant on the sacrifice layer and the front surface of the semiconductor substrate at a periphery of the sacrifice layer, forming a thin film of monocrystalline silicon, polycrystalline silicon, or amorphous silicon on an upper side of the sacrifice layer, opening a backside etching window in a back surface protective film having resistance to the etchant for etching the semiconductor substrate formed on a back surface of the semiconductor substrate, forming a through-hole in the semiconductor substrate by etching the semiconductor substrate anisotropically by using crystal-oriented etching by applying the etchant from the back surface window, then etching the sacrifice layer isotropically by the etchant after the etchant reaches the front surface of the semiconductor substrate, and then etching the semiconductor substrate anisotropically by using crystal-oriented etching from a front side by the etchant spread to a space formed after the sacrifice layer is removed, and forming a holder for supporting the thin film on an upper surface of the semiconductor substrate by removing the thin film protective film partially.
摘要翻译：一种制造振动传感器的方法，包括在单晶硅的半导体衬底的前表面的一个部分处形成牺牲层，所述材料用蚀刻剂蚀刻半导体衬底的各向同性蚀刻材料，形成具有材料的薄膜保护膜在牺牲层周围的牺牲层和半导体衬底的前表面上的蚀刻剂的耐受性，在牺牲层的上侧形成单晶硅，多晶硅或非晶硅的薄膜，打开背面在形成在半导体衬底的背面上的用于蚀刻半导体衬底的蚀刻剂的表面保护膜的蚀刻窗口中，通过使用晶体取向的蚀刻通过蚀刻半导体衬底各向异性地在半导体衬底中形成通孔应用来自后表面窗口的蚀刻剂，然后蚀刻在蚀刻剂到达半导体衬底的前表面之后，通过蚀刻剂各向同性地施加牺牲层，然后通过使用晶体取向的蚀刻从蚀刻剂扩散到牺牲层之后形成的空间来各向异性蚀刻半导体衬底并且通过部分去除薄膜保护膜来形成用于在半导体衬底的上表面上支撑薄膜的保持器。

10. 发明授权

US07862474B2 Speed change control device for automatic transmission and control method thereof 有权
标题翻译：用于自动变速器的变速控制装置及其控制方法
公开(公告)号：US07862474B2
公开(公告)日：2011-01-04
申请号：US11727706
申请日：2007-03-28
申请人： Yusuke Kimura , Atsufumi Kobayashi , Tatsuo Ochiai , Shuichi Wakabayashi , Akihiro Makiyama , Ryoji Kadono
发明人： Yusuke Kimura , Atsufumi Kobayashi , Tatsuo Ochiai , Shuichi Wakabayashi , Akihiro Makiyama , Ryoji Kadono
IPC分类号： F16H61/16
CPC分类号： F16H61/66259 , F16H59/20 , F16H59/42 , F16H61/16 , F16H2061/6617 , Y10T477/62427 , Y10T477/6934 , Y10T477/693675
摘要： A speed change control device for an automatic transmission according to this invention determines whether or not a request to downshift a gear position of the transmission exists during traveling in a manual speed change mode (S1, S2), and calculates an input shaft rotation speed of the transmission following a downshift based on the downshift request (S4). When it is determined that the calculated rotation speed is higher than a rotation speed limit value (S5), the speed change control device performs a downshift to a gear position at which the input shaft rotation speed of the transmission is lower than the calculated rotation speed (S6, S8).
摘要翻译：根据本发明的用于自动变速器的变速控制装置确定在手动变速模式（S1，S2）中行驶期间是否存在对变速档进行档位降档的请求，并且计算输入轴转速基于降档请求进行降档之后的发送（S4）。当确定计算出的转速高于转速极限值（S5）时，变速控制装置对变速器的输入轴转速低于计算出的转速的档位进行降档（S6，S8）。

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