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1. 发明申请

US20170001285A1 WRENCH WITH SLIDBALE OPERATION MEMBERS FORMING MULITPLE CLAMPING OPTIONS 审中-公开
标题翻译：带有滑动操作部件的扳手形成多重夹紧选项
公开(公告)号：US20170001285A1
公开(公告)日：2017-01-05
申请号：US14790000
申请日：2015-07-02
申请人： Shu-Min Chen
发明人： Shu-Min Chen
IPC分类号： B25B13/18
CPC分类号： B25B13/12 , B25B13/08
摘要： A wrench includes a body having two openings. The body has a chamber in which two operation members are movably located. Each operation member has a first jaw and a second jaw respectively formed on two ends thereof. The first jaws each have a first face protruding out from the first opening. The second jaws each have a second face protruding out from the second opening. Two resilient members are located in the chamber and bias the two operation members to let the two first jaws and the two second jaws are opened wide. The first and second jaws each have slots which are engaged with the lips on each of the openings. The first jaws protruding from the opening form an open wrench, and the second jaws protruding from the other opening form another open wrench.
摘要翻译：扳手包括具有两个开口的主体。主体具有一个室，其中两个操作构件可移动地定位。每个操作构件具有分别形成在其两端的第一钳口和第二钳口。第一夹爪各自具有从第一开口突出的第一面。第二钳口各自具有从第二开口突出的第二面。两个弹性构件位于腔室中并且偏置两个操作构件以使两个第一钳口和两个第二钳口打开得很宽。第一和第二钳口各自具有与每个开口上的唇缘接合的槽。从开口突出的第一个夹爪形成一个开放的扳手，而另一个开口的第二个卡爪形成另一个开放的扳手。

2. 发明授权

US08507957B2 Integrated circuit layouts with power rails under bottom metal layer 有权
标题翻译：集成电路布局与底部金属层下的电源轨
公开(公告)号：US08507957B2
公开(公告)日：2013-08-13
申请号：US13098925
申请日：2011-05-02
申请人： Yung-Chin Hou , Shyue-Shyh Lin , Li-Chun Tien , Shu-Min Chen , Pin-Dai Sue
发明人： Yung-Chin Hou , Shyue-Shyh Lin , Li-Chun Tien , Shu-Min Chen , Pin-Dai Sue
IPC分类号： H01L23/48 , H01L21/768 , H01L29/41
CPC分类号： H01L27/11807 , H01L23/5286 , H01L27/0207 , H01L2027/11881 , H01L2924/0002 , H01L2924/00
摘要： A circuit includes a semiconductor substrate; a bottom metal layer over the semiconductor substrate, wherein no additional metal layer is between the semiconductor substrate and the bottom metal layer; and a cell including a plug-level power rail under the bottom metal layer.
摘要翻译：电路包括半导体衬底; 半导体衬底上的底部金属层，其中在半导体衬底和底部金属层之间没有附加的金属层; 以及在底部金属层下方包括插头级电源轨的电池。

3. 发明授权

US08728892B2 Adaptive fin design for FinFETs 有权
标题翻译： FinFET的自适应散热片设计
公开(公告)号：US08728892B2
公开(公告)日：2014-05-20
申请号：US13101890
申请日：2011-05-05
申请人： Tsong-Hua Ou , Shu-Min Chen , Pin-Dai Sue , Li-Chun Tien , Ru-Gun Liu
发明人： Tsong-Hua Ou , Shu-Min Chen , Pin-Dai Sue , Li-Chun Tien , Ru-Gun Liu
IPC分类号： H01L21/336
CPC分类号： H01L27/0886 , G06F17/5068 , H01L21/823431 , H01L27/0924 , H01L27/11803
摘要： A method of designing a standard cell includes determining a minimum fin pitch of semiconductor fins in the standard cell, wherein the semiconductor fins are portions of FinFETs; and determining a minimum metal pitch of metal lines in a bottom metal layer over the standard cell, wherein the minimum metal pitch is greater than the minimum fin pitch. The standard cell is placed in an integrated circuit and implemented on a semiconductor wafer.
摘要翻译：设计标准单元的方法包括确定标准单元中的半导体鳍片的最小鳍间距，其中半导体鳍片是FinFET的部分; 以及确定所述标准单元上的底部金属层中的金属线的最小金属间距，其中所述最小金属间距大于所述最小鳍间距。将标准单元放置在集成电路中并在半导体晶片上实现。

4. 发明授权

US07808051B2 Standard cell without OD space effect in Y-direction 有权
标题翻译：标准电池在Y方向没有OD空间效应
公开(公告)号：US07808051B2
公开(公告)日：2010-10-05
申请号：US12345372
申请日：2008-12-29
申请人： Yung-Chin Hou , Lee-Chung Lu , Ta-Pen Guo , Li-Chun Tien , Ping Chung Li , Chun-Hui Tai , Shu-Min Chen
发明人： Yung-Chin Hou , Lee-Chung Lu , Ta-Pen Guo , Li-Chun Tien , Ping Chung Li , Chun-Hui Tai , Shu-Min Chen
IPC分类号： H01L29/76
CPC分类号： H01L27/0207 , H01L27/11807
摘要： An integrated circuit structure includes a semiconductor substrate; a first active region in the semiconductor substrate; and a second active region in the semiconductor substrate and of an opposite conductivity type than the first active region. A gate electrode strip is over the first and the second active regions and forms a first MOS device and a second MOS device with the first active region and the second active region, respectively. A first spacer bar is in the semiconductor substrate and connected to the first active region. At least a portion of the first spacer bar is adjacent to and spaced apart from a portion of the first active region. A second spacer bar is in the semiconductor substrate and connected to the second active region. At least a portion of the second spacer bar is adjacent to and spaced apart from a portion of the second active region.
摘要翻译：集成电路结构包括半导体衬底; 半导体衬底中的第一有源区; 以及在所述半导体衬底中并且具有与所述第一有源区相反的导电类型的第二有源区。栅电极条在第一和第二有源区之上，分别形成具有第一有源区和第二有源区的第一MOS器件和第二MOS器件。第一间隔棒位于半导体衬底中并与第一有源区连接。第一间隔条的至少一部分与第一有源区的一部分相邻并间隔开。第二间隔杆位于半导体衬底中并连接到第二有源区。第二间隔杆的至少一部分与第二有源区的一部分相邻并间隔开。

5. 发明授权

US09152031B2 Light source module and projection apparatus 有权
标题翻译：光源模块和投影设备
公开(公告)号：US09152031B2
公开(公告)日：2015-10-06
申请号：US13606013
申请日：2012-09-07
申请人： Ching-Chuan Wei , Shu-Min Chen , Hao-Wei Chiu , Ko-Shun Chen
发明人： Ching-Chuan Wei , Shu-Min Chen , Hao-Wei Chiu , Ko-Shun Chen
IPC分类号： G03B21/00 , G03B21/20 , G02B26/00 , G02B27/10 , G03B33/08 , G02B27/28 , H04N9/31
CPC分类号： G03B21/2073 , G02B26/008 , G02B27/1033 , G02B27/283 , G02B27/286 , G03B21/204 , G03B33/08 , H04N9/3167 , H04N9/3197
摘要： A light source module includes a light-emitting device, a wavelength conversion device and a polarization and color separation unit. The light-emitting device provides an excitation beam including a first portion beam having a first polarization direction. The wavelength conversion device includes a first wavelength conversion area and a polarization conversion area. When the first portion beam irradiates the first wavelength conversion area, the first portion beam is converted into a first color beam. When the first portion beam irradiates the polarization conversion area, the first polarization direction of the first portion beam is converted to a second polarization direction. The polarization and color separation unit is disposed between the wavelength conversion device and the light-emitting device, and transmits the first portion beam with the first polarization direction, and reflects the first portion beam with the second polarization direction and the first color beam to the same direction.
摘要翻译：光源模块包括发光器件，波长转换器件和偏振和颜色分离单元。发光装置提供包括具有第一偏振方向的第一部分光束的激发光束。波长转换装置包括第一波长转换区域和偏振转换区域。当第一部分光束照射第一波长转换区域时，第一部分光束被转换成第一彩色光束。当第一部分光束照射偏振转换区时，第一部分光束的第一偏振方向被转换为第二偏振方向。偏振和分色单元设置在波长转换装置和发光装置之间，并且透射具有第一偏振方向的第一部分光束，并将具有第二偏振方向的第一部分光束和第一彩色光束反射到同方向

6. 发明申请

US20130012362A1 HAND REHABILITATION DEVICE 有权
标题翻译：手工修复装置
公开(公告)号：US20130012362A1
公开(公告)日：2013-01-10
申请号：US13620406
申请日：2012-09-14
申请人： Ming-Shaung Ju , Chou-Ching Lin , Meng-Dar Shieh , Shu-Min Chen , Yu-Ching Lin , Yung-Nien Sun , Pin-Cheng Kung , Chia-Chun Hung , Yi-Ting Lee
发明人： Ming-Shaung Ju , Chou-Ching Lin , Meng-Dar Shieh , Shu-Min Chen , Yu-Ching Lin , Yung-Nien Sun , Pin-Cheng Kung , Chia-Chun Hung , Yi-Ting Lee
IPC分类号： A63B23/16
CPC分类号： A61H1/0285 , A61H1/0288 , A61H2201/0157 , A61H2201/123 , A61H2201/1246 , A61H2201/1638 , A61H2201/1676
摘要： A hand rehabilitation device includes a base having an arm support. A first actuator is mounted to the base and includes a first output end. A second actuator is connected to the first output end of the first actuator and includes a second output end. A handle is connected to the second output end. One of the first and second output ends rotates about an axis. The other of the first and second output ends reciprocates in a direction.
摘要翻译：手部康复装置包括具有手臂支撑件的底座。第一致动器安装到基座并且包括第一输出端。第二致动器连接到第一致动器的第一输出端并且包括第二输出端。手柄连接到第二输出端。第一和第二输出端中的一个绕轴旋转。第一和第二输出端中的另一个在一个方向上往复运动。

7. 发明申请

US20120280331A1 Adaptive Fin Design for FinFETs 有权
标题翻译： FinFET的自适应鳍设计
公开(公告)号：US20120280331A1
公开(公告)日：2012-11-08
申请号：US13101890
申请日：2011-05-05
申请人： Tsong-Hua Ou , Shu-Min Chen , Pin-Dai Sue , Li-Chun Tien , Ru-Gun Liu
发明人： Tsong-Hua Ou , Shu-Min Chen , Pin-Dai Sue , Li-Chun Tien , Ru-Gun Liu
IPC分类号： H01L29/772 , H01L21/283 , H01L21/306
CPC分类号： H01L27/0886 , G06F17/5068 , H01L21/823431 , H01L27/0924 , H01L27/11803
摘要： A method of designing a standard cell includes determining a minimum fin pitch of semiconductor fins in the standard cell, wherein the semiconductor fins are portions of FinFETs; and determining a minimum metal pitch of metal lines in a bottom metal layer over the standard cell, wherein the minimum metal pitch is greater than the minimum fin pitch. The standard cell is placed in an integrated circuit and implemented on a semiconductor wafer.
摘要翻译：设计标准单元的方法包括确定标准单元中的半导体鳍片的最小鳍间距，其中半导体鳍片是FinFET的部分; 以及确定所述标准单元上的底部金属层中的金属线的最小金属间距，其中所述最小金属间距大于所述最小鳍间距。将标准单元放置在集成电路中并在半导体晶片上实现。

8. 发明申请

US20120280287A1 Integrated Circuit Layouts with Power Rails under Bottom Metal Layer 有权
标题翻译：集成电路布局与底层金属层下的电源轨
公开(公告)号：US20120280287A1
公开(公告)日：2012-11-08
申请号：US13098925
申请日：2011-05-02
申请人： Yung-Chin Hou , Shyue-Shyh Lin , Li-Chun Tien , Shu-Min Chen , Pin-Dai Sue
发明人： Yung-Chin Hou , Shyue-Shyh Lin , Li-Chun Tien , Shu-Min Chen , Pin-Dai Sue
IPC分类号： H01L29/76 , H01L23/48
CPC分类号： H01L27/11807 , H01L23/5286 , H01L27/0207 , H01L2027/11881 , H01L2924/0002 , H01L2924/00
摘要： A circuit includes a semiconductor substrate; a bottom metal layer over the semiconductor substrate, wherein no additional metal layer is between the semiconductor substrate and the bottom metal layer; and a cell including a plug-level power rail under the bottom metal layer.
摘要翻译：电路包括半导体衬底; 半导体衬底上的底部金属层，其中在半导体衬底和底部金属层之间没有附加的金属层; 以及在底部金属层下方包括插头级电源轨的电池。

9. 发明申请

US20100078725A1 Standard Cell without OD Space Effect in Y-Direction 有权
标题翻译：标准电池在Y方向没有OD空间效应
公开(公告)号：US20100078725A1
公开(公告)日：2010-04-01
申请号：US12345372
申请日：2008-12-29
申请人： Yung-Chin Hou , Lee-Chung Lu , Ta-Pen Guo , Li-Chun Tien , Ping Chung Li , Chun-Hui Tai , Shu-Min Chen
发明人： Yung-Chin Hou , Lee-Chung Lu , Ta-Pen Guo , Li-Chun Tien , Ping Chung Li , Chun-Hui Tai , Shu-Min Chen
IPC分类号： H01L27/088 , H01L29/06
CPC分类号： H01L27/0207 , H01L27/11807
摘要： An integrated circuit structure includes a semiconductor substrate; a first active region in the semiconductor substrate; and a second active region in the semiconductor substrate and of an opposite conductivity type than the first active region. A gate electrode strip is over the first and the second active regions and forms a first MOS device and a second MOS device with the first active region and the second active region, respectively. A first spacer bar is in the semiconductor substrate and connected to the first active region. At least a portion of the first spacer bar is adjacent to and spaced apart from a portion of the first active region. A second spacer bar is in the semiconductor substrate and connected to the second active region. At least a portion of the second spacer bar is adjacent to and spaced apart from a portion of the second active region.
摘要翻译：集成电路结构包括半导体衬底; 半导体衬底中的第一有源区; 以及在所述半导体衬底中并且具有与所述第一有源区相反的导电类型的第二有源区。栅电极条在第一和第二有源区之上，分别形成具有第一有源区和第二有源区的第一MOS器件和第二MOS器件。第一间隔棒位于半导体衬底中并与第一有源区连接。第一间隔条的至少一部分与第一有源区的一部分相邻并间隔开。第二间隔杆位于半导体衬底中并连接到第二有源区。第二间隔杆的至少一部分与第二有源区的一部分相邻并间隔开。

10. 发明申请

US20050192690A1 Chip probing equipment and test modeling for next generation MES (300MM) 审中-公开
标题翻译：芯片探测设备和下一代MES（300MM）的测试建模
公开(公告)号：US20050192690A1
公开(公告)日：2005-09-01
申请号：US10788173
申请日：2004-02-26
申请人： Keng-Chia Yang , Shu-Min Chen , Larry Jann , Lieh-Jung Chen
发明人： Keng-Chia Yang , Shu-Min Chen , Larry Jann , Lieh-Jung Chen
IPC分类号： G05B19/418 , G06F19/00 , G06Q10/00
CPC分类号： G05B19/41875 , G05B2219/31372 , G05B2219/32137 , G05B2219/32205 , G05B2219/45031 , G06Q10/06 , Y02P90/12 , Y02P90/20 , Y02P90/265
摘要： A new solution in 300 mm Chip Probing (CP) Manufacturing Execution System (MES) design based on a SiView infrastructure. It models actual behavior making it possible to specify exact test program and equipment configuration. The test program, product file, and probe card are modeled into the MES infrastructure so that extra systems and tables requiring costly maintenance can be eliminated. With the required tester configuration built into the product class and tester capability status built into the test equipment's properties, real-time lot-equipment dispatching can occur according to the configuration. A modified version can be supported by I-EDA and PCMS.
摘要翻译：基于SiView基础设施的300 mm芯片探测（CP）制造执行系统（MES）设计的新解决方案。它模拟实际行为，使得可以指定精确的测试程序和设备配置。测试程序，产品文件和探针卡被建模为MES基础设施，以便可以消除需要昂贵维护的额外的系统和表。通过内置在测试设备属性中的产品类和测试仪能力状态所需的测试仪配置，可以根据配置进行实时批量设备调度。 I-EDA和PCMS可以支持修改版本。

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