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1. 发明授权

US06197205B1 Electrolytic solution for lithium cell and method for producing same 有权
标题翻译：锂电池用电解液及其制造方法
公开(公告)号：US06197205B1
公开(公告)日：2001-03-06
申请号：US09572887
申请日：2000-05-18
申请人： Shouichi Tsujioka , Mituo Takahata , Hisakazu Itou , Tadayuki Kawashima , Keiji Sato , Hiromi Sasaki , Sunao Yamamoto
发明人： Shouichi Tsujioka , Mituo Takahata , Hisakazu Itou , Tadayuki Kawashima , Keiji Sato , Hiromi Sasaki , Sunao Yamamoto
IPC分类号： C02F176
CPC分类号： H01M10/052 , C01D15/005 , H01M6/162 , H01M6/164 , H01M6/166 , H01M6/168 , H01M10/0566
摘要： The present invention relates to a method for producing an electrolytic solution containing a solute of lithium hexafluorophosphate. This method includes a step of (a) reacting lithium fluoride with phosphorus pentafluiride, in a nonaqueous organic solvent that is used for producing a lithium cell's electrolytic solution, thereby to form the lithium hexafluorophosphate dissolved in the solvent. According to this method, both yield and purity of the reaction product are sufficiently high, and the reaction can easily be managed. According to need, after the step (a), the nonaqueous organic solvent may be replaced with another nonaqueous organic solvent. The present invention further relates to a method for purifying an electrolytic solution used for a lithium cell. This electrolytic solution contains an acid impurity having at least one hydrogen atom in the molecule. this method includes steps of (a) adding at least one hydrogen-free halide selected from chlorides, bromides and iodides, to the electrolytic solution, such that the acid impurity is reacted with the at least one hydrogen-free halide, thereby to form at least one hydrogen halide selected from hydrogen chloride, hydrogen bromide and hydrogen iodide; and (b) purging the at least one hydrogen halide from the electrolytic solution to purify the electrolytic solution. The acid impurity concentration of the electrolytic solution is substantially reduced by this method.
摘要翻译：本发明涉及含有六氟磷酸锂的溶质的电解液的制造方法。该方法包括以下步骤：（a）在用于制备锂电池的电解液的非水有机溶剂中使氟化锂与五氟乙酸磷反应，从而形成溶解在溶剂中的六氟磷酸锂。根据该方法，反应产物的产率和纯度均足够高，反应容易。根据需要，在（a）工序之后，非水系有机溶剂可以用其他非水有机溶剂代替。本发明还涉及用于锂电池的电解液的净化方法。该电解液含有分子中具有至少一个氢原子的酸性杂质。该方法包括以下步骤：（a）将至少一种选自氯化物，溴化物和碘化物的无氢卤化物加入到电解溶液中，使得酸杂质与至少一种无氢卤化物反应，从而形成选自氯化氢，溴化氢和碘化氢中的至少一种卤化氢; 和（b）从所述电解液中清除所述至少一种卤化氢以净化所述电解液。通过该方法，电解液的酸性杂质浓度明显降低。

2. 发明授权

US06659111B1 Cleaning gas and method for cleaning vacuum treatment apparatus by flowing the cleaning gas 失效
标题翻译：清洁气体和通过使清洁气体流动来清洁真空处理装置的方法
公开(公告)号：US06659111B1
公开(公告)日：2003-12-09
申请号：US09480680
申请日：2000-01-11
申请人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi , Tadayuki Kawashima , Masahiko Matsudo , Tatsuo Hatano
发明人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi , Tadayuki Kawashima , Masahiko Matsudo , Tatsuo Hatano
IPC分类号： B08B900
CPC分类号： C23C16/4405 , C23F1/12 , H01L21/28556 , Y10S438/905
摘要： A cleaning gas includes HF gas whose concentration is greater than or equal to 1 vol % and oxygen containing gas whose concentration ranges from 0.5 to 99 vol %. The oxygen containing gas includes at least one of O2 gas, O3 gas, N2O gas, NO gas, CO gas and CO2 gas. The cleaning gas is employed to remove a deposited material generated in a vacuum treatment apparatus for producing a thin film of at least one of Ti, W, Ta, Ru, Ir, a compound thereof and an alloy thereof.
摘要翻译：清洁气体包括浓度大于或等于1体积％的HF气体和浓度范围为0.5至99体积％的含氧气体。含氧气体包括O 2气体，O 3气体，N 2 O气体，NO气体，CO气体和CO 2气体中的至少一种。采用清洁气体除去在真空处理装置中产生的沉积材料，用于制造Ti，W，Ta，Ru，Ir及其化合物及其合金中的至少一种的薄膜。

3. 发明申请

US20130032600A1 Valve For Container Filled With Halogen Gas Or Halogen Compound Gas 审中-公开
标题翻译：装有卤素气体或卤素化合物气体的集装箱阀门
公开(公告)号：US20130032600A1
公开(公告)日：2013-02-07
申请号：US13641642
申请日：2011-03-08
申请人： Tomonori Umezaki , Kenji Tanaka , Akifumi Yao , Tatsuo Miyazaki , Isamu Mori , Tadayuki Kawashima
发明人： Tomonori Umezaki , Kenji Tanaka , Akifumi Yao , Tatsuo Miyazaki , Isamu Mori , Tadayuki Kawashima
IPC分类号： F16K7/12 , F17C13/04 , F16K1/30
CPC分类号： F16K1/302 , F16J3/02 , F16K7/126 , F16K7/14 , F16K7/16 , F16K25/00 , F17C2205/0329 , F17C2205/0385 , F17C2205/0394 , F17C2223/0123 , F17C2260/036 , F17C2270/0518
摘要： A direct-touch diaphragm valve according to the present invention includes a valve body having inlet and outlet passages, a valve chamber being in communication with the inlet and outlet passages, a valve seat located around an open inner end of the inlet passage and a diaphragm arranged on the valve seat so as to hermetically seal the valve chamber and open or close the inlet and outlet passages, wherein the valve seat and the diaphragm have respective contact surfaces formed therebetween such that: such that: the contact surface of the valve seat has a surface roughness Ra of 0.1 to 10.0 μm and a curvature radius Ra of 100 to 1000 mm; and the area ratio Sb/Sa of a contact area Sb of the valve seat with the diaphragm to a gas contact surface area Sa of the diaphragm ranges from 0.2 to 10%.
摘要翻译：根据本发明的直接接触式隔膜阀包括具有入口和出口通道的阀体，与入口和出口通道连通的阀室，位于入口通道的开口内端周围的阀座和隔膜设置在所述阀座上，以便气密地密封所述阀室并打开或关闭所述入口和出口通道，其中所述阀座和所述隔膜具有形成在其间的各自的接触表面，使得：所述阀座的接触表面具有表面粗糙度Ra为0.1〜10.0μm，曲率半径Ra为100〜1000mm; 阀座与隔膜的接触面积Sb与隔膜的气体接触面积Sa的面积比Sb / Sa为0.2〜10％。

4. 发明授权

US6156930A Method for producing trifluoromethanesulfonyl chloride 有权
标题翻译：制备三氟甲磺酰氯的方法
公开(公告)号：US6156930A
公开(公告)日：2000-12-05
申请号：US472885
申请日：1999-12-28
申请人： Kaoru Mori , Takanori Hamana , Shigenori Sakai , Tadayuki Kawashima
发明人： Kaoru Mori , Takanori Hamana , Shigenori Sakai , Tadayuki Kawashima
IPC分类号： C07C303/22 , C07C309/80 , C07C309/06
CPC分类号： C07C303/22
摘要： The present invention provides a method for producing trifluoromethanesulfonyl chloride. This method includes the step of reacting trifluoromethanesulfonic acid with phosphorous trichloride and chlorine. With this method, trifluoromethanesulfonyl chloride can be easily and highly selectively produced at high yield. The reaction may be carried out at about atmospheric pressure. Furthermore, the reaction may be carried out in the presence of phosphorus oxychloride either under a pressurized condition or at about atmospheric pressure.
摘要翻译：本发明提供三氟甲磺酰氯的制造方法。该方法包括使三氟甲磺酸与三氯化磷和氯反应的步骤。通过这种方法，可以高产率容易且高选择性地制备三氟甲磺酰氯。反应可以在约大气压下进行。此外，反应可以在磷酰氯的存在下，在加压条件下或在大气压下进行。

5. 发明授权

US6147006A Cleaning gas 有权
标题翻译：清洁气体
公开(公告)号：US6147006A
公开(公告)日：2000-11-14
申请号：US479057
申请日：2000-01-07
申请人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi , Tadayuki Kawashima
发明人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi , Tadayuki Kawashima
IPC分类号： H01L21/31 , C23C16/44 , C23F1/12 , H01L21/304 , H01L21/306 , H01L21/302
CPC分类号： C23C16/4405 , H01L21/02049 , Y10S438/905
摘要： A cleaning gas which is employed to remove an unnecessary deposited material formed in a thin film forming apparatus by thermal decomposition of pentaethoxytantalum or tetraethoxysilane without damaging a reactor, tools, parts and piping of a silicon oxide film-forming apparatus or a tantalum oxide film-forming apparatus. The cleaning gas comprises HF gas and at least one of an oxygen-containing gas, a fluorine gas, a chlorine fluoride gas, a bromine fluoride gas and an iodine fluoride gas.
摘要翻译：一种清洁气体，其用于通过五乙氧基钽或四乙氧基硅烷的热分解除去形成在薄膜形成装置中的不需要的沉积材料，而不会损坏氧化硅膜形成装置或氧化钽膜形成装置的反应器，工具，部件和管道，成型装置。清洁气体包括HF气体和含氧气体，氟气，氟化氯气体，溴氟化物气体和碘化氟气体中的至少一种。

6. 发明授权

US5866059A Polycrystalline BCN substance and method of producing same 失效
标题翻译：多晶BCN物质及其制造方法
公开(公告)号：US5866059A
公开(公告)日：1999-02-02
申请号：US682234
申请日：1996-07-17
申请人： Shuzo Fujiwara , Masatake Yoshida , Yozo Kakudate , Shu Usuba , Hiroyuki Yokoi , Katsutoshi Aoki , Masayuki Kawaguchi , Tadayuki Kawashima , Katsuharu Kasami , Tamikuni Komatsu
发明人： Shuzo Fujiwara , Masatake Yoshida , Yozo Kakudate , Shu Usuba , Hiroyuki Yokoi , Katsutoshi Aoki , Masayuki Kawaguchi , Tadayuki Kawashima , Katsuharu Kasami , Tamikuni Komatsu
IPC分类号： C01B31/30 , B01J3/08 , C01B21/082 , C01B35/14 , C04B35/5831 , C06B29/16 , B29C43/56 , C01B35/00
CPC分类号： C04B35/5831 , B01J3/08 , C06B29/16 , B01J2203/066
摘要： In order to produce a new substance having a diamond crystal structure, the following steps are taken in order. First, a graphite-like substance is prepared which contains boron (B), carbon (C) and nitrogen (N) as main elements. Then, the graphite-like substance is mixed with a metal powder to produce a mixture. Then, a pressure is applied to the mixture to produce a molded body, and then an explosion pressure is applied to the molded body.
摘要翻译：为了制备具有金刚石晶体结构的新物质，按顺序进行以下步骤。首先，制备含有硼（B），碳（C）和氮（N）作为主要元素的石墨状物质。然后，将石墨状物质与金属粉末混合，制成混合物。然后，向混合物施加压力以制造成型体，然后对成形体施加爆炸压力。

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