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1. 发明授权

US07355060B2 Method for producing organosilane 有权
标题翻译：生产有机硅烷的方法
公开(公告)号：US07355060B2
公开(公告)日：2008-04-08
申请号：US10580265
申请日：2004-11-09
申请人： Tsuyoshi Ogawa , Yoshihiro Muramatsu , Mitsuya Ohashi
发明人： Tsuyoshi Ogawa , Yoshihiro Muramatsu , Mitsuya Ohashi
IPC分类号： C07F7/08
CPC分类号： C07F7/0896
摘要： By reducing an organosilane represented by the formula (1), SiXnR4-n (1) (wherein X represents a halogen or alkoxide, n represents an integer of 1-3, and R represents an alkyl group or aryl group), there is produced a corresponding organosilane represented by the formula (2), SiHnR4-n (2) (wherein n represents an integer of 1-3, and R represents an alkyl group or aryl group). In this production method, an aromatic hydrocarbon series organic solvent is used as a reaction solvent, and aluminum lithium hydride is used as a hydrogenating agent.
摘要翻译：通过还原由式（1）表示的有机硅烷，<？in-line-formula description =“In-line Formulas”end =“lead”→> SiX n R 4-n （1）<？in-line-formula description =“In-line Formulas”end =“tail”？>（其中X表示卤素或醇盐，n表示1-3的整数，R表示烷基或芳基），产生由式（2）表示的相应有机硅烷，<？in-line-formula description =“In-line Formulas”end =“lead”？> SiH n n （2）<？in-line-formula description =“In-line Formulas”end =“tail”？>（其中n表示1-3的整数， R表示烷基或芳基）。在该制造方法中，使用芳香族烃系有机溶剂作为反应溶剂，使用氢化铝锂作为氢化剂。

2. 发明申请

US20070149798A1 Method for producing organosilane 有权
标题翻译：生产有机硅烷的方法
公开(公告)号：US20070149798A1
公开(公告)日：2007-06-28
申请号：US10580265
申请日：2004-11-09
申请人： Tsuyoshi Ogawa , Yoshihiro Muramatsu , Mitsuya Ohashi
发明人： Tsuyoshi Ogawa , Yoshihiro Muramatsu , Mitsuya Ohashi
IPC分类号： C07F7/00
CPC分类号： C07F7/0896
摘要： By reducing an organosilane represented by the formula (1), SiXnR4-n (1) (wherein X represents a halogen or alkoxide, n represents an integer of 1-3, and R represents an alkyl group or aryl group), there is produced a corresponding organosilane represented by the formula (2), SiHnR4-n (2) (wherein n represents an integer of 1-3, and R represents an alkyl group or aryl group). In this production method, an aromatic hydrocarbon series organic solvent is used as a reaction solvent, and aluminum lithium hydride is used as a hydrogenating agent.
摘要翻译：通过还原由式（1）表示的有机硅烷，<？in-line-formula description =“In-line Formulas”end =“lead”→> SiX n R 4-n （1）<？in-line-formula description =“In-line Formulas”end =“tail”？>（其中X表示卤素或醇盐，n表示1-3的整数，R表示烷基或芳基），产生由式（2）表示的相应有机硅烷，<？in-line-formula description =“In-line Formulas”end =“lead”？> SiH n n （2）<？in-line-formula description =“In-line Formulas”end =“tail”？>（其中n表示1-3的整数， R表示烷基或芳基）。在该制造方法中，使用芳香族烃系有机溶剂作为反应溶剂，使用氢化铝锂作为氢化剂。

3. 发明授权

US6147006A Cleaning gas 有权
标题翻译：清洁气体
公开(公告)号：US6147006A
公开(公告)日：2000-11-14
申请号：US479057
申请日：2000-01-07
申请人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi , Tadayuki Kawashima
发明人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi , Tadayuki Kawashima
IPC分类号： H01L21/31 , C23C16/44 , C23F1/12 , H01L21/304 , H01L21/306 , H01L21/302
CPC分类号： C23C16/4405 , H01L21/02049 , Y10S438/905
摘要： A cleaning gas which is employed to remove an unnecessary deposited material formed in a thin film forming apparatus by thermal decomposition of pentaethoxytantalum or tetraethoxysilane without damaging a reactor, tools, parts and piping of a silicon oxide film-forming apparatus or a tantalum oxide film-forming apparatus. The cleaning gas comprises HF gas and at least one of an oxygen-containing gas, a fluorine gas, a chlorine fluoride gas, a bromine fluoride gas and an iodine fluoride gas.
摘要翻译：一种清洁气体，其用于通过五乙氧基钽或四乙氧基硅烷的热分解除去形成在薄膜形成装置中的不需要的沉积材料，而不会损坏氧化硅膜形成装置或氧化钽膜形成装置的反应器，工具，部件和管道，成型装置。清洁气体包括HF气体和含氧气体，氟气，氟化氯气体，溴氟化物气体和碘化氟气体中的至少一种。

4. 发明申请

US20130143112A1 Method for Producing a Lithium Hexafluorophosphate Concentrated Liquid 有权
标题翻译：生产六氟磷酸锂浓缩液的方法
公开(公告)号：US20130143112A1
公开(公告)日：2013-06-06
申请号：US13703588
申请日：2011-08-15
申请人： Meguru Oe , Keiji Sato , Mitsuya Ohashi , Toshinori Mitsui
发明人： Meguru Oe , Keiji Sato , Mitsuya Ohashi , Toshinori Mitsui
IPC分类号： H01M10/056
CPC分类号： H01M10/056 , C01D15/005 , H01M10/052 , H01M10/0563 , H01M10/0568 , H01M10/0569 , Y02E60/122 , Y02P70/54
摘要： Disclosed is a method for forming lithium hexafluorophosphate by reacting together phosphorus trichloride, chlorine and lithium chloride in a nonaqueous organic solvent and then making the reaction product formed in the solvent react with hydrogen fluoride. This method is characterized by that a lithium hexafluorophosphate concentrated liquid is obtained by conducting a filtration after making the reaction product formed in the solvent react with hydrogen fluoride and then subjecting the filtrate to a concentration by degassing. By this method, it is possible to easily produce a high-purity, lithium hexafluorophosphate concentrated liquid at a low cost.
摘要翻译：公开了通过使三氯化磷，氯和氯化锂在非水有机溶剂中反应，然后使在溶剂中形成的反应产物与氟化氢反应形成六氟磷酸锂的方法。该方法的特征在于，使得在溶剂中形成的反应产物与氟化氢反应后，通过进行过滤，然后通过脱气浓缩滤液而获得六氟磷酸锂浓缩液。通过该方法，可以容易地以低成本制造高纯度六氟磷酸锂浓缩液。

5. 发明授权

US07744769B2 Gas for removing deposit and removal method using same 有权
标题翻译：用于除去沉积物和除去方法的气体使用它
公开(公告)号：US07744769B2
公开(公告)日：2010-06-29
申请号：US11543968
申请日：2006-10-06
申请人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi
发明人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi
IPC分类号： B44C1/22 , H01L21/302
CPC分类号： C03C15/00 , C03C17/00 , C03C2218/33 , C09K13/00 , C23F4/00 , H01L21/31116 , H01L21/32136 , Y10S438/905 , Y10S438/906
摘要： The invention relates to a gas for removing deposits by a gas-solid reaction. This gas includes a hypofluorite that is defined as being a compound having at least one OF group in the molecule. Various deposits can be removed by the gas, and the gas can easily be made unharmful on the global environment after the removal of the deposits, due to the use of a hypofluorite. The gas may be a cleaning gas for cleaning, for example, the inside of an apparatus for producing semiconductor devices. This cleaning gas comprises 1-100 volume % of the hypofluorite. Alternatively, the gas of the invention may be an etching gas for removing an unwanted portion of a film deposited on a substrate. The unwanted portion can be removed by this etching gas as precisely as originally designed, due to the use of a hypofluorite. The invention further relates to a method for removing a deposit by the gas. This method includes the step (a) bringing the gas into contact with the deposit, thereby to remove the deposit by a gas-solid reaction.
摘要翻译：本发明涉及通过气 - 固反应去除沉积物的气体。该气体包括被定义为在分子中具有至少一个OF基团的化合物的次氟酸盐。各种沉积物可以被气体除去，并且由于使用次氟酸盐，在清除沉积物之后，气体可以容易地在全球环境中变得不起作用。气体可以是用于清洁的清洁气体，例如用于制造半导体器件的设备的内部。该清洁气体包含1-100体积％的次氟酸盐。或者，本发明的气体可以是用于去除沉积在基板上的膜的不希望的部分的蚀刻气体。由于使用次氟酸盐，可以通过精确地由原始设计的这种蚀刻气体除去不想要的部分。本发明还涉及一种通过气体去除沉积物的方法。该方法包括步骤（a）使气体与沉积物接触，从而通过气固反应除去沉积物。

6. 发明授权

US07168436B2 Gas for removing deposit and removal method using same 有权
标题翻译：用于除去沉积物和除去方法的气体使用它
公开(公告)号：US07168436B2
公开(公告)日：2007-01-30
申请号：US10705532
申请日：2003-11-12
申请人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi
发明人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi
IPC分类号： B08B9/00 , H01L21/00
CPC分类号： C03C15/00 , C03C17/00 , C03C2218/33 , C09K13/00 , C23F4/00 , H01L21/31116 , H01L21/32136 , Y10S438/905 , Y10S438/906
摘要： The invention relates to a gas for removing deposits by a gas-solid reaction. This gas includes a hypofluorite that is defined as being a compound having at least one OF group in the molecule. Various deposits can be removed by the gas, and the gas can easily be made unharmful on the global environment after the removal of the deposits, due to the use of a hypofluorite. The gas may be a cleaning gas for cleaning, for example, the inside of an apparatus for producing semiconductor devices. This cleaning gas comprises 1–100 volume % of the hypofluorite. Alternatively, the gas of the invention may be an etching gas for removing an unwanted portion of a film deposited on a substrate. The unwanted portion can be removed by this etching gas as precisely as originally designed, due to the use of a hypofluorite. The invention further relates to a method for removing a deposit by the gas. This method includes the step (a) bringing the gas into contact with the deposit, thereby to remove the deposit by a gas-solid reaction.
摘要翻译：本发明涉及通过气 - 固反应去除沉积物的气体。该气体包括被定义为在分子中具有至少一个OF基团的化合物的次氟酸盐。各种沉积物可以被气体除去，并且由于使用次氟酸盐，在清除沉积物之后，气体可以容易地在全球环境中变得不起作用。气体可以是用于清洁的清洁气体，例如用于制造半导体器件的设备的内部。该清洁气体包含1-100体积％的次氟酸盐。或者，本发明的气体可以是用于去除沉积在基板上的膜的不希望的部分的蚀刻气体。由于使用次氟酸盐，可以通过精确地由原始设计的这种蚀刻气体除去不想要的部分。本发明还涉及一种通过气体去除沉积物的方法。该方法包括步骤（a）使气体与沉积物接触，从而通过气固反应除去沉积物。

7. 发明授权

US07973390B2 Modifier for low dielectric constant film, and method for production thereof 有权
标题翻译：低介电常数膜用改性剂及其制造方法
公开(公告)号：US07973390B2
公开(公告)日：2011-07-05
申请号：US12518003
申请日：2007-07-11
申请人： Tsuyoshi Ogawa , Mitsuya Ohashi
发明人： Tsuyoshi Ogawa , Mitsuya Ohashi
IPC分类号： H01L21/02 , C07F7/10
CPC分类号： H01L23/5329 , H01L21/02137 , H01L21/02282 , H01L21/02337 , H01L21/31058 , H01L21/3122 , H01L2924/0002 , H01L2924/00
摘要： A modifier for lowering relative dielectric constant of a low dielectric constant film used in semiconductor devices, the modifier of the low dielectric constant film being characterized in that it contains as an effective component a silicon compound represented by formula (1) R3-nHnSiN3 (1) in which R is a C1-C4 alkyl group, and n is an integer from 0 to 3.
摘要翻译：一种用于降低半导体器件中使用的低介电常数膜的相对介电常数的改性剂，其特征在于，其包含作为有效成分的由式（1）表示的硅化合物：R3-nHnSiN3（1 ），其中R是C1-C4烷基，n是0-3的整数。

8. 发明申请

US20100323530A1 MODIFIER FOR LOW DIELECTRIC CONSTANT FILM, AND METHOD FOR PRODUCTION THEREOF 有权
标题翻译：用于低介电常数膜的改性剂及其生产方法
公开(公告)号：US20100323530A1
公开(公告)日：2010-12-23
申请号：US12518003
申请日：2007-07-11
申请人： Tsuyoshi Ogawa , Mitsuya Ohashi
发明人： Tsuyoshi Ogawa , Mitsuya Ohashi
IPC分类号： H01L21/02 , C07F7/10 , C08L83/08
CPC分类号： H01L23/5329 , H01L21/02137 , H01L21/02282 , H01L21/02337 , H01L21/31058 , H01L21/3122 , H01L2924/0002 , H01L2924/00
摘要： There is provided a modifier for lowering relative dielectric constant of a low dielectric constant film used in semiconductor devices, the modifier of the low dielectric constant film being characterized in that it contains as an effective component a silicon compound represented by formula (1) R3-nHnSiN3 (1) (R is a C1-C4 alkyl group, and n is an integer of 0-3).
摘要翻译：提供了用于降低半导体器件中使用的低介电常数膜的相对介电常数的改性剂，该低介电常数膜的改性剂的特征在于，其包含作为有效成分的由式（1）表示的硅化合物，R3- nH n SiN 3（1）（R为C1-C4烷基，n为0-3的整数）。

9. 发明授权

US5234679A Method of refining tungsten hexafluoride containing molybdenum hexafluoride as an impurity 失效
标题翻译：精制含有十五烷基硫脲的硝基二氢呋喃的方法
公开(公告)号：US5234679A
公开(公告)日：1993-08-10
申请号：US866347
申请日：1992-04-10
申请人： Takashi Suenaga , Mitsuya Ohashi , Takashi Yoneda , Yoshiyuki Kobayashi
发明人： Takashi Suenaga , Mitsuya Ohashi , Takashi Yoneda , Yoshiyuki Kobayashi
IPC分类号： C01G41/04
CPC分类号： C01G41/04
摘要： A method of refining tungsten hexafluoride containing molybdenum hexafluoride as an impurity includes the step of contacting the tungsten hexafluoride with at least one metal selected from the group consisting of Mo, W, Cu, Ni, Fe, Co, Zn, Ti, Al, Ca and Mg at a temperature ranging from 100.degree. to 500.degree. C. Molybdenum hexafluoride is efficiently removed from the tungsten hexafluoride by the method.

10. 发明授权

US09343774B2 Method for producing a lithium hexafluorophosphate concentrated liquid 有权
标题翻译：六氟磷酸锂浓缩液的制造方法
公开(公告)号：US09343774B2
公开(公告)日：2016-05-17
申请号：US13703588
申请日：2011-08-15
申请人： Meguru Oe , Keiji Sato , Mitsuya Ohashi , Toshinori Mitsui
发明人： Meguru Oe , Keiji Sato , Mitsuya Ohashi , Toshinori Mitsui
IPC分类号： C01D15/00 , H01M10/0563 , H01M10/056 , H01M10/052 , H01M10/0568 , H01M10/0569
CPC分类号： H01M10/056 , C01D15/005 , H01M10/052 , H01M10/0563 , H01M10/0568 , H01M10/0569 , Y02E60/122 , Y02P70/54
摘要： Disclosed is a method for forming lithium hexafluorophosphate by reacting together phosphorus trichloride, chlorine and lithium chloride in a nonaqueous organic solvent and then making the reaction product formed in the solvent react with hydrogen fluoride. This method is characterized by that a lithium hexafluorophosphate concentrated liquid is obtained by conducting a filtration after making the reaction product formed in the solvent react with hydrogen fluoride and then subjecting the filtrate to a concentration by degassing. By this method, it is possible to easily produce a high-purity, lithium hexafluorophosphate concentrated liquid at a low cost.
摘要翻译：公开了通过使三氯化磷，氯和氯化锂在非水有机溶剂中反应，然后使在溶剂中形成的反应产物与氟化氢反应形成六氟磷酸锂的方法。该方法的特征在于，使得在溶剂中形成的反应产物与氟化氢反应后，通过进行过滤，然后通过脱气浓缩滤液而获得六氟磷酸锂浓缩液。通过该方法，可以容易地以低成本制造高纯度六氟磷酸锂浓缩液。

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