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1. 发明申请

US20110169989A1 SOLID-STATE IMAGING APPARATUS 有权
标题翻译：固态成像装置
公开(公告)号：US20110169989A1
公开(公告)日：2011-07-14
申请号：US12935313
申请日：2009-03-25
申请人： Shoji Kono , Toru Koizumi
发明人： Shoji Kono , Toru Koizumi
IPC分类号： H04N5/335 , H01L27/146
CPC分类号： H04N5/335 , H01L27/14609 , H01L27/1463 , H01L31/03529
摘要： A solid-state imaging apparatus capable of suppressing blooming and color mixing includes a plurality of pixels, each including a photoelectric converting portion and a transferring portion for transferring signal electrons from the photoelectric converting portion, wherein a plurality of the photoelectric converting portions is formed in a first conductivity type well region formed on the semiconductor substrate; a second conductivity type first impurity region is arranged between the adjacent photoelectric converting portions; a first conductivity type second impurity region having an impurity concentration higher than that of the well region is arranged between the first impurity region and each of the photoelectric converting portions; and a first conductivity type third impurity region having an impurity concentration higher than that of the well region and decreasing from the semiconductor substrate toward the surface direction of the apparatus between the semiconductor substrate and the first impurity region.
摘要翻译：能够抑制喷色和混色的固态成像装置包括多个像素，每个像素包括光电转换部分和用于从光电转换部分传送信号电子的转印部分，其中多个光电转换部分形成在形成在所述半导体基板上的第一导电型阱区; 在相邻的光电转换部之间配置第二导电型的第一杂质区域; 在第一杂质区域和每个光电转换部分之间布置具有高于阱区的杂质浓度的第一导电类型的第二杂质区; 以及第一导电型第三杂质区，其杂质浓度高于阱区的杂质浓度，并且从半导体衬底朝向半导体衬底和第一杂质区之间的器件的表面方向减小。

2. 发明授权

US08670056B2 Solid-state imaging apparatus 有权
标题翻译：固态成像装置
公开(公告)号：US08670056B2
公开(公告)日：2014-03-11
申请号：US12935313
申请日：2009-03-25
申请人： Shoji Kono , Toru Koizumi
发明人： Shoji Kono , Toru Koizumi
IPC分类号： H04N5/335
CPC分类号： H04N5/335 , H01L27/14609 , H01L27/1463 , H01L31/03529
摘要： A solid-state imaging apparatus capable of suppressing blooming and color mixing includes a plurality of pixels, each including a photoelectric converting portion and a transferring portion for transferring signal electrons from the photoelectric converting portion, wherein a plurality of the photoelectric converting portions is formed in a first conductivity type well region formed on the semiconductor substrate; a second conductivity type first impurity region is arranged between the adjacent photoelectric converting portions; a first conductivity type second impurity region having an impurity concentration higher than that of the well region is arranged between the first impurity region and each of the photoelectric converting portions; and a first conductivity type third impurity region having an impurity concentration higher than that of the well region and decreasing from the semiconductor substrate toward the surface direction of the apparatus between the semiconductor substrate and the first impurity region.
摘要翻译：能够抑制喷色和混色的固态成像装置包括多个像素，每个像素包括光电转换部分和用于从光电转换部分传送信号电子的转印部分，其中多个光电转换部分形成在形成在所述半导体基板上的第一导电型阱区; 在相邻的光电转换部之间配置第二导电型的第一杂质区域; 在第一杂质区域和每个光电转换部分之间布置具有高于阱区的杂质浓度的第一导电类型的第二杂质区; 以及第一导电型第三杂质区，其杂质浓度高于阱区的杂质浓度，并且从半导体衬底朝向半导体衬底和第一杂质区之间的器件的表面方向减小。

3. 发明授权

US08619163B2 Solid state imaging using a correction parameter for correcting a cross talk between adjacent pixels 有权
标题翻译：使用用于校正相邻像素之间的串扰的校正参数的固态成像
公开(公告)号：US08619163B2
公开(公告)日：2013-12-31
申请号：US12874119
申请日：2010-09-01
申请人： Masanori Ogura , Toru Koizumi , Satoshi Koizumi
发明人： Masanori Ogura , Toru Koizumi , Satoshi Koizumi
IPC分类号： H04N5/217 , H04N9/083
CPC分类号： H04N5/359 , H04N9/045 , H04N9/646
摘要： An image processing apparatus, for correcting a cross talk between adjacent pixels, includes: a memory unit for storing a correction parameter for reducing a cross talk signal leaked to an object pixel from an adjacent pixel, the correction parameter corresponding to a position of the object pixel; and a correcting unit for subtracting, based on the correction parameter stored in the memory unit, the cross talk signal from a pixel signal of the solid-state imaging apparatus correspondingly to a position of the pixel, wherein a number of the object pixel is at least two, and the at least two object pixels have different addresses in a horizontal direction, and different addresses in a vertical direction.
摘要翻译：一种用于校正相邻像素之间的串扰的图像处理装置，包括：存储单元，用于存储用于减少从相邻像素泄漏到对象像素的串扰信号的校正参数，对应于对象位置的校正参数像素以及校正单元，用于根据存储在存储单元中的校正参数，相对于像素的位置从固态成像设备的像素信号中减去串扰信号，其中对象像素的数量在至少两个，并且所述至少两个对象像素在水平方向上具有不同的地址，并且在垂直方向上具有不同的地址。

4. 发明授权

US08520108B2 Method for driving a photoelectric conversion device with isolation switches arranged between signal lines and amplifiers 有权
标题翻译：用于驱动设置在信号线和放大器之间的隔离开关的光电转换装置的方法
公开(公告)号：US08520108B2
公开(公告)日：2013-08-27
申请号：US13085575
申请日：2011-04-13
申请人： Masanori Ogura , Toru Koizumi , Masaru Fujimura
发明人： Masanori Ogura , Toru Koizumi , Masaru Fujimura
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/378 , H04N5/3575 , H04N5/374
摘要： A photoelectric conversion device prevents a pseudo signal caused by the parasitic capacitance of a transfer switch from being input to an amplifier. A photoelectric conversion device (50) includes a pixel (10) which outputs a signal to a signal line (107), an amplifier which amplifies the signal supplied via the signal line (107), and an isolation switch (121) inserted between a signal line (108) and the input node of the amplifier. The pixel (10) includes a photodiode, a floating diffusion (FD), a transfer switch which transfers the charge of the photodiode to the FD, and an amplification transistor which outputs a signal to a signal line (109) in accordance with the potential of the FD. The isolation switch (121) is turned off at least in a period when a transfer pulse for controlling the transfer switch of the pixel (10) transits.
摘要翻译：光电转换装置防止由转印开关的寄生电容引起的伪信号被输入到放大器。光电转换装置（50）包括向信号线（107）输出信号的像素（10），放大经由信号线（107）供给的信号的放大器和插入在信号线（107）之间的隔离开关信号线（108）和放大器的输入节点。像素（10）包括光电二极管，浮动扩散（FD），将光电二极管的电荷传送到FD的转移开关，以及根据电位将信号输出到信号线（109）的放大晶体管的FD。至少在用于控制像素（10）的转印开关的转印脉冲转移的期间，隔离开关（121）截止。

5. 发明授权

US08520102B2 Solid-state imaging apparatus 失效
标题翻译：固态成像装置
公开(公告)号：US08520102B2
公开(公告)日：2013-08-27
申请号：US13075259
申请日：2011-03-30
申请人： Masanori Ogura , Yuichiro Yamashita , Toru Koizumi
发明人： Masanori Ogura , Yuichiro Yamashita , Toru Koizumi
IPC分类号： H04N9/64 , H04N3/14 , H01L27/148
CPC分类号： H04N5/378 , H03F3/45188 , H03F2203/45646 , H04N5/357
摘要： A solid-state imaging apparatus is provided that including a plurality of amplifiers each one amplifying a signal from each one of a plurality of pixels. The amplifier including first and second field effect transistors, gate electrodes of which are connected to the same voltage node (VBL); and a first wiring connected between the voltage node and the gate electrodes of the first and second field effect transistors. The first and second field effect transistors are arranged in a direction perpendicular to a direction in which the plurality of amplifiers is arranged. Material of the first wiring has a resistivity smaller than that of the gate electrodes of the first and second field effect transistors.
摘要翻译：提供一种固态成像装置，其包括多个放大器，每个放大器从多个像素中的每一个放大信号。该放大器包括第一和第二场效应晶体管，其栅电极连接到同一电压节点（VBL）; 以及连接在第一和第二场效应晶体管的电压节点和栅电极之间的第一布线。第一和第二场效应晶体管沿与多个放大器布置的方向垂直的方向排列。第一布线的材料的电阻率小于第一和第二场效应晶体管的栅电极的电阻率。

6. 发明授权

US08476102B2 Solid state image pickup device and method for manufacturing solid state image pickup device 有权
标题翻译：固体摄像装置及固态摄像装置的制造方法
公开(公告)号：US08476102B2
公开(公告)日：2013-07-02
申请号：US13029046
申请日：2011-02-16
申请人： Hideaki Takada , Toru Koizumi , Yasuo Yamazaki , Tatsuya Ryoki
发明人： Hideaki Takada , Toru Koizumi , Yasuo Yamazaki , Tatsuya Ryoki
IPC分类号： H01L21/00
CPC分类号： H01L27/14689
摘要： A method for manufacturing a solid state image pickup device including a first active region provided with a first conversion unit, a second active region provided with a second conversion unit, and a third active region adjoining the first and the second active regions with a field region therebetween and being provided with a pixel transistor, the method including the steps of ion-implanting first conductivity type impurity ions to form a semiconductor region serving as a potential barrier against the signal carriers at a predetermined depth in the third active region and ion-implanting second conductivity type impurity ions into the third active region with energy lower than the above-described ion-implantation energy.
摘要翻译：一种固态摄像装置的制造方法，其特征在于，具备设置有第一转换部的第一有源区，设置有第二转换部的第二有源区和与所述第一有源区和所述第二有源区邻接的第三有源区，并且设置有像素晶体管，所述方法包括以下步骤：离子注入第一导电型杂质离子，以形成用作第三有源区中预定深度处的信号载流子的势垒的半导体区域和离子注入第二导电型杂质离子进入第三有源区，能量低于上述离子注入能量。

7. 发明授权

US08345133B2 Photoelectric conversion apparatus and imaging system using the same 有权
公开(公告)号：US08345133B2
公开(公告)日：2013-01-01
申请号：US12712393
申请日：2010-02-25
申请人： Takashi Matsuda , Toru Koizumi
发明人： Takashi Matsuda , Toru Koizumi
IPC分类号： H04N5/335
CPC分类号： H01L27/14621 , H01L27/1463 , H01L27/14683 , H01L27/14806
摘要： A plurality of photoelectric conversion elements including a first photoelectric conversion element, a second photoelectric conversion element, and a third photoelectric conversion element, are arranged in a photoelectric conversion apparatus of the present invention. Provided, between the first photoelectric conversion element and the second photoelectric conversion element, is a first semiconductor region of a first conductivity type and of a first width in which a signal charge is a minor charier. And, provided, between the first photoelectric conversion element and the third photoelectric conversion element, is a second semiconductor region of the first conductivity type in a higher impurity concentration and of a second width narrower than the first width at a position deeper in a semiconductor substrate rather than a depth of the first semiconductor region.

8. 发明授权

US08305472B2 Image capturing system 有权
标题翻译：图像捕获系统
公开(公告)号：US08305472B2
公开(公告)日：2012-11-06
申请号：US12039234
申请日：2008-02-28
申请人： Satoshi Suzuki , Toru Koizumi
发明人： Satoshi Suzuki , Toru Koizumi
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： G03B7/093 , H04N5/2353 , H04N5/3532 , H04N5/3575 , H04N5/374
摘要： An image capturing system includes an image sensor and a mechanical shutter. A charge accumulation operation of the pixels of each row of the image sensor starts at the end of a reset operation, and ends when the mechanical shutter sets the pixels of each row to a light shield state. The reset operation of the pixels of each row of the image sensor is performed to select rows sequentially in a first direction from an upper surface to a lower surface of a housing. The mechanical shutter ends exposure of the image sensor while causing a shutter curtain to run in the first direction, and a readout operation of the pixels of each row of the image sensor is performed to select rows sequentially in a second direction that is the reverse of the first direction.
摘要翻译：图像捕获系统包括图像传感器和机械快门。图像传感器的每行的像素的电荷累积操作在复位操作结束时开始，并且当机械快门将每行的像素设置为遮光状态时结束。执行图像传感器的每行的像素的复位操作，以从壳体的上表面到下表面沿第一方向依次选择行。机械快门在使快门帘幕沿第一方向运动的同时使图像传感器曝光，并且执行图像传感器的每行的像素的读出操作，以与第二方向相反的第二方向依次选择行第一个方向。

9. 发明授权

US08274105B2 Image pickup device and camera 有权
标题翻译：摄像设备和相机
公开(公告)号：US08274105B2
公开(公告)日：2012-09-25
申请号：US13043808
申请日：2011-03-09
申请人： Toru Koizumi
发明人： Toru Koizumi
IPC分类号： H01L31/062
CPC分类号： H01L27/14603 , H01L27/14601 , H01L27/14609 , H01L27/1463
摘要： An object is to provide a solid state image pickup device and a camera which do not worsen a sensor performance in terms of an optical property, a saturated charge amount and the like. A solid state image sensor including a pixel region having a plurality of pixels includes at least a photodiode and an amplifying portion amplifying photocharges outputted from the photodiode in the pixel region, and further includes a well electrode for taking well potential of a well region in which the amplifying portion is arranged. Between the well electrode and the photodiode, no element isolation regions by an insulation film are arranged. Moreover, on the surface of a first semiconductor region in which the photodiode stores the charges, a second semiconductor layer of a conductivity type reverse to that of the first semiconductor region is arranged.
摘要翻译：本发明的目的是提供一种在光学特性，饱和电荷量等方面不会使传感器性能恶化的固体摄像装置和照相机。包括具有多个像素的像素区域的固态图像传感器至少包括光电二极管和放大部分，放大从像素区域中的光电二极管输出的光电荷，并且还包括阱电极，用于获得阱区的良好电位，其中布置放大部分。在阱电极和光电二极管之间，没有布置绝缘膜的元件隔离区域。此外，在光电二极管存储电荷的第一半导体区域的表面上，设置与第一半导体区域相反的导电类型的第二半导体层。

10. 发明申请

US20120199726A1 IMAGING APPARATUS AND PROCESSING METHOD THEREOF 有权
标题翻译：成像装置及其处理方法
公开(公告)号：US20120199726A1
公开(公告)日：2012-08-09
申请号：US13446003
申请日：2012-04-13
申请人： Toru Koizumi
发明人： Toru Koizumi
IPC分类号： H01L27/148 , H01L27/146
CPC分类号： H04N5/3742 , H04N5/2355 , H04N5/35572 , H04N5/374 , H04N5/37457
摘要： A solid-state imaging apparatus of a dynamic range enlarged by reading out a carrier accumulated in a carrier accumulation unit at a plurality of times during a single carrier accumulation time period.
摘要翻译：通过在单个载波累积时间周期内多次读出在载波累积单元中累积的载波来扩大动态范围的固态成像装置。

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