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    • 4. 发明授权
    • Photoelectric conversion apparatus and imaging system using the same
    • 光电转换装置及使用其的成像系统
    • US08553115B2
    • 2013-10-08
    • US12957537
    • 2010-12-01
    • Yu ArishimaTakashi MatsudaToru Koizumi
    • Yu ArishimaTakashi MatsudaToru Koizumi
    • H04N5/335
    • H01L27/14887H01L27/1463H04N5/359
    • If separations between photoelectric conversion elements are different from each other, charge leaking into adjacent photoelectric conversion elements varies. A photoelectric conversion apparatus of the present invention includes a first semiconductor region that can be potential barriers against signal charge, between first and second photoelectric conversion elements. Further, the apparatus includes a second semiconductor region that has the same depth as the depth of the first semiconductor region and a width narrower than the width of the first semiconductor region and can be potential barriers against the signal charge, between the first and a third photoelectric conversion element. Moreover, the apparatus includes a third semiconductor region that can be potential barriers against the signal charge under the first semiconductor region and the second semiconductor region.
    • 如果光电转换元件之间的分离彼此不同,则泄漏到相邻光电转换元件中的电荷变化。 本发明的光电转换装置包括可在第一和第二光电转换元件之间作为抵抗信号电荷的势垒的第一半导体区域。 此外,该装置包括第二半导体区域,其具有与第一半导体区域的深度相同的深度,并且宽度比第一半导体区域的宽度窄,并且可以是抵抗信号电荷的势垒,第一和第三 光电转换元件。 此外,该装置包括第三半导体区域,该第三半导体区域可以是抵抗第一半导体区域和第二半导体区域下的信号电荷的势垒。
    • 8. 发明申请
    • PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE SAME
    • 光电转换装置和成像系统
    • US20110134270A1
    • 2011-06-09
    • US12957537
    • 2010-12-01
    • Yu ArishimaTakashi MatsudaToru Koizumi
    • Yu ArishimaTakashi MatsudaToru Koizumi
    • H04N5/228H04N5/335
    • H01L27/14887H01L27/1463H04N5/359
    • If separations between photoelectric conversion elements are different from each other, charge leaking into adjacent photoelectric conversion elements varies. A photoelectric conversion apparatus of the present invention includes a first semiconductor region that can be potential barriers against signal charge, between first and second photoelectric conversion elements. Further, the apparatus includes a second semiconductor region that has the same depth as the depth of the first semiconductor region and a width narrower than the width of the first semiconductor region and can be potential barriers against the signal charge, between the first and a third photoelectric conversion element. Moreover, the apparatus includes a third semiconductor region that can be potential barriers against the signal charge under the first semiconductor region and the second semiconductor region.
    • 如果光电转换元件之间的分离彼此不同,则泄漏到相邻光电转换元件中的电荷变化。 本发明的光电转换装置包括可在第一和第二光电转换元件之间作为抵抗信号电荷的势垒的第一半导体区域。 此外,该装置包括第二半导体区域,其具有与第一半导体区域的深度相同的深度,并且宽度比第一半导体区域的宽度窄,并且可以是抵抗信号电荷的势垒,第一和第三 光电转换元件。 此外,该装置包括第三半导体区域,该第三半导体区域可以是抵抗第一半导体区域和第二半导体区域下的信号电荷的势垒。
    • 10. 发明授权
    • Acoustic wave filter
    • 声波滤波器
    • US09231553B2
    • 2016-01-05
    • US13344274
    • 2012-01-05
    • Kazunori InoueTakashi MatsudaMichio Miura
    • Kazunori InoueTakashi MatsudaMichio Miura
    • H03H9/02H03H9/72H03H9/64
    • H03H9/02992H03H9/02952H03H9/6483H03H9/725
    • A configuration that reduces a parasitic capacitance between wires is achieved at a low cost. Disclosed is an acoustic wave filter provided with a piezoelectric substrate, resonators that include a comb-shaped electrode formed on the piezoelectric substrate, a wiring portion that is connected to the comb-shaped electrode, and a dielectric layer formed to cover the comb-shaped electrode. The wiring portion is provided with a lower layer wiring portion that is disposed in the same layer as the comb-shaped electrode and an upper layer wiring portion that is disposed on the lower layer wiring portion. The upper layer wiring portion includes a region that has a wider electrode width than the electrode width of the lower layer wiring portion.
    • 以低成本实现降低电线之间的寄生电容的结构。 公开了一种设置有压电基板的声波滤波器,包括形成在压电基板上的梳状电极的谐振器,连接到梳状电极的布线部分和形成为覆盖梳状电极的电介质层 电极。 布线部分设置有与梳状电极相同的层中的下层布线部分和布置在下层布线部分上的上层布线部分。 上层布线部分包括具有比下层布线部分的电极宽度更宽的电极宽度的区域。