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1. 发明授权

US06258741B1 Corrosion-resistant member 失效
标题翻译：耐腐蚀构件
公开(公告)号：US06258741B1
公开(公告)日：2001-07-10
申请号：US09201030
申请日：1998-11-30
申请人： Shoji Kohsaka , Yumiko Itoh , Hitoshi Matsunosako , Hidemi Matsumoto , Masahito Nakanishi
发明人： Shoji Kohsaka , Yumiko Itoh , Hitoshi Matsunosako , Hidemi Matsumoto , Masahito Nakanishi
IPC分类号： C04B35563
CPC分类号： C04B35/563
摘要： This invention relates to a corrosion-resistant member used in a region in which a gas or a plasma of a halogen-containing compound is used, in a process for producing semiconductors, especially a member used as jigs such as a supporter for supporting a material to be treated, or as an inner wall member in an apparatus for producing semiconductors, which has a high corrosion resistance to a fluorine type or a chlorine type corrosive gas, or a fluorine type or a chlorine type plasma. According to this invention, there are provided a corrosion-resistant member to be used ina region in which a gas or plasma of a halogen compound is used in a process of producing a semiconductor, wherein at least surface exposed to the gas or plasma is formed of a boron carbide sintered body having a relative density of at least 96% and containing 300 ppm or below, in a total amount, of an alkali metal, an alkalin earth metal and a transition metal, and a process for producing the same.
摘要翻译：本发明涉及在半导体制造方法中使用的含卤素化合物的气体或等离子体的区域中使用的耐腐蚀性构件，特别是用作支撑材料的支撑体等的构件作为对氟类或氯型腐蚀性气体或氟型或氯型等离子体具有高耐腐蚀性的半导体制造装置中的内壁部件。根据本发明，提供了在制造半导体的工艺中使用卤素化合物的气体或等离子体的区域中使用的耐腐蚀构件，其中形成至少暴露于气体或等离子体的表面的碳化硼烧结体及其制造方法，其总量相对于碱金属，碱土金属和过渡金属的相对密度为96％以上且含有300ppm以下。

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