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    • 2. 发明授权
    • Silicon nitride-silicon carbide composite sintered material and
manufacturing thereof
    • 氮化硅 - 碳化硅复合烧结材料及其制造
    • US5523267A
    • 1996-06-04
    • US276596
    • 1994-07-18
    • Kouichi TanakaMasaki TerazonoMasahiro SatohMasahito NakanishiHideki UchimuraShoji Kousaka
    • Kouichi TanakaMasaki TerazonoMasahiro SatohMasahito NakanishiHideki UchimuraShoji Kousaka
    • C04B35/565C04B35/575C04B35/584C04B35/593C04B35/567
    • C04B35/593C04B35/575
    • A silicon nitride-silicon carbide composite sintered material which comprises 100 parts by weight of a silicon nitride component containing 92 to 99.5 mol % of silicon nitride including excessive oxygen and 0.5 to 8 mol % of the elements of Group IIIa in the Periodic Table as corresponding oxides thereof and 1 to 100 parts by weight of a silicon carbide component in a dispersed state, wherein the silicon nitride component has an average particle size of 1 .mu.m or less and an average aspect ratio of 2 to 10, and the silicon carbide component has an average particle size of 1 .mu.m or less, moreover, the total amount of Al, Mg, Ca respectively contained in the sintered material as calculated as oxides thereof is 0.5% by weight or less, and a manufacturing method thereof.According to the above-mentioned composite sintered material, it becomes possible to suppress deterioration of strength at 1400.degree. C. and realize excellent creep properties. Therefore, the composite sintered material is applicable not only to structural materials for heat engines such as gas turbines and turbo-rotors but also to other heat resistant materials for various uses.
    • 一种氮化硅 - 碳化硅复合烧结材料,其包含100重量份的包含92至99.5摩尔%的包含过量氧的氮化硅和0.5至8摩尔%的元素周期表中的IIIa族的元素的氮化硅组分, 氧化物和1〜100重量份的分散状态的碳化硅成分,其中,氮化硅成分的平均粒径为1μm以下,平均纵横比为2〜10,碳化硅成分 具有1μm以下的平均粒径,此外,以氧化物计算的烧结体中所含的Al,Mg,Ca的总量为0.5重量%以下,其制造方法。 根据上述复合烧结材料,可以抑制1400℃强度的劣化,实现优异的蠕变性能。 因此,复合烧结体不仅适用于燃气轮机,涡轮转子等发动机的结构材料,还适用于各种用途的其他耐热材料。
    • 3. 发明授权
    • Corrosion-resistant member
    • 耐腐蚀构件
    • US06258741B1
    • 2001-07-10
    • US09201030
    • 1998-11-30
    • Shoji KohsakaYumiko ItohHitoshi MatsunosakoHidemi MatsumotoMasahito Nakanishi
    • Shoji KohsakaYumiko ItohHitoshi MatsunosakoHidemi MatsumotoMasahito Nakanishi
    • C04B35563
    • C04B35/563
    • This invention relates to a corrosion-resistant member used in a region in which a gas or a plasma of a halogen-containing compound is used, in a process for producing semiconductors, especially a member used as jigs such as a supporter for supporting a material to be treated, or as an inner wall member in an apparatus for producing semiconductors, which has a high corrosion resistance to a fluorine type or a chlorine type corrosive gas, or a fluorine type or a chlorine type plasma. According to this invention, there are provided a corrosion-resistant member to be used ina region in which a gas or plasma of a halogen compound is used in a process of producing a semiconductor, wherein at least surface exposed to the gas or plasma is formed of a boron carbide sintered body having a relative density of at least 96% and containing 300 ppm or below, in a total amount, of an alkali metal, an alkalin earth metal and a transition metal, and a process for producing the same.
    • 本发明涉及在半导体制造方法中使用的含卤素化合物的气体或等离子体的区域中使用的耐腐蚀性构件,特别是用作支撑材料的支撑体等的构件 作为对氟类或氯型腐蚀性气体或氟型或氯型等离子体具有高耐腐蚀性的半导体制造装置中的内壁部件。 根据本发明,提供了在制造半导体的工艺中使用卤素化合物的气体或等离子体的区域中使用的耐腐蚀构件,其中形成至少暴露于气体或等离子体的表面 的碳化硼烧结体及其制造方法,其总量相对于碱金属,碱土金属和过渡金属的相对密度为96%以上且含有300ppm以下。