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1. 发明授权

US5298485A Superconductive logic device 失效
标题翻译：超导逻辑器件
公开(公告)号：US5298485A
公开(公告)日：1994-03-29
申请号：US983290
申请日：1992-11-30
申请人： Shoei Kataoka , Hiroya Sato , Shuhei Tsuchimoto , Hideo Nojima , Shinji Toyoyama , Masayoshi Koba , Nobuo Hashizume , Eizo Ohno , Susumu Saitoh
发明人： Shoei Kataoka , Hiroya Sato , Shuhei Tsuchimoto , Hideo Nojima , Shinji Toyoyama , Masayoshi Koba , Nobuo Hashizume , Eizo Ohno , Susumu Saitoh
IPC分类号： H01L39/18 , H03K19/195 , H03K17/92
CPC分类号： H01L39/18 , Y10S505/858 , Y10S505/86
摘要： A logic circuit device includes a superconductive body formed of a ceramic superconductive material. The ceramic superconductive material has random grain boundaries which act as weak couplings. The ceramic superconductive material also has a magneto-resistive property. There is at least one conductor arranged near the ceramic superconductive body in order to exert a magnetic field on the ceramic superconductive body. The ceramic superconductive body changes its resistance in response to the magnetic field generated by the conductor. The ceramic superconductive body can be used as part of a logic circuit.
摘要翻译：逻辑电路器件包括由陶瓷超导材料形成的超导体。陶瓷超导材料具有作为弱耦合的随机晶界。陶瓷超导材料也具有磁阻特性。至少有一个布置在陶瓷超导体附近的导体，以便在陶瓷超导体上施加磁场。陶瓷超导体响应于导体产生的磁场而改变其电阻。陶瓷超导体可以用作逻辑电路的一部分。

2. 发明授权

US5223446A Semiconductor device with a photodetector switching device grown on a recrystallized monocrystal silicon film 失效
标题翻译：具有在再结晶单晶硅膜上生长的光电检测器开关器件的半导体器件
公开(公告)号：US5223446A
公开(公告)日：1993-06-29
申请号：US777668
申请日：1991-10-16
申请人： Toshiaki Miyajima , Shinji Toyoyama , Masayoshi Koba
发明人： Toshiaki Miyajima , Shinji Toyoyama , Masayoshi Koba
IPC分类号： H01L27/144 , H03K17/785
CPC分类号： H01L27/1443 , H03K17/785
摘要： A semiconductor device is disclosed which comprises a normally-off first MOSFET, a normally-off second MOSFET connected between the gate and source of the first MOSFET, a diode connected between the gate and source of the second MOSFET, a resistor and an optoelectric transducer array, both of which are connected in parallel with each other between the gate and drain of the second MOSFET, wherein all of the components are formed on a single semiconductor chip. Also disclosed is a semiconductor device comprising a normally-off first MOSFET, a normally-on second MOSFET connected between the gate and source of the first MOSFET, a first resistor and a diode, both of which are connected in series between the source and drain of the second MOSFET, a second resistor connected between the gate and source of the second MOSFET, an optoelectric transducer array connected between the gate of the second MOSFET and the terminal which is positioned between the first resistor and the diode, wherein all of the components are formed on a single semiconductor chip.Further disclosed is a method for manufacturing a semiconductor device comprising a normally-off first MOSFET, a normally-off second MOSFET connected between the gate and source of the first MOSFET, a diode connected between the gate and source of the second MOSFET, a resistor and an optoelectric transducer array, both of which are connected in parallel with each other between the gate and drain of the second MOSFET.
摘要翻译：公开了一种半导体器件，其包括常闭第一MOSFET，连接在第一MOSFET的栅极和源极之间的常关的第二MOSFET，连接在第二MOSFET的栅极和源极之间的二极管，电阻器和光电换能器阵列，它们都在第二MOSFET的栅极和漏极之间彼此并联连接，其中所有的部件形成在单个半导体芯片上。还公开了一种半导体器件，包括常闭第一MOSFET，连接在第一MOSFET的栅极和源极之间的常数第二MOSFET，第一电阻器和二极管，两者均串联连接在源极和漏极连接在第二MOSFET的栅极和源极之间的第二电阻器，连接在第二MOSFET的栅极和位于第一电阻器和二极管之间的端子之间的光电变换器阵列，其中所有部件形成在单个半导体芯片上。进一步公开的是一种制造半导体器件的方法，该半导体器件包括常闭第一MOSFET，连接在第一MOSFET的栅极和源极之间的常关的第二MOSFET，连接在第二MOSFET的栅极和源极之间的二极管，以及光电转换器阵列，它们都在第二MOSFET的栅极和漏极之间彼此并联连接。

3. 发明授权

US5105090A Semiconductor device with a photodetector switching device 失效
标题翻译：具有光电转换开关装置的半导体器件
公开(公告)号：US5105090A
公开(公告)日：1992-04-14
申请号：US443278
申请日：1989-11-28
申请人： Toshiaki Miyajima , Shinji Toyoyama , Masayoshi Koba
发明人： Toshiaki Miyajima , Shinji Toyoyama , Masayoshi Koba
IPC分类号： H01L27/14 , H01L27/144 , H01L31/12 , H03K17/785
CPC分类号： H03K17/785 , H01L27/1443
摘要： A semiconductor device is disclosed which comprises a normally-off first MOSFET, a normally-off second MOSFET connected between the gate and source of the first MOSFET, a diode connected between the gate and source of the second MOSFET, a resistor and an optoelectric transducer array, both of which are connected in parallel with each other between the gate and drain of the second MOSFET, wherein all of the components are formed on a single semiconductor chip. Also disclosed is a semiconductor device comprising a normally-off first MOSFET, a normally-on second MOSFET connected between the gate and source of the first MOSFET, a first resistor and a diode, both of which are connected in series between the source and drain of the second MOSFET, a second resistor connected between the gate and source of the second MOSFET, an optoelectric transducer array connected between the gate of the second MOSFET and the terminal which is positioned between the first resistor and the diode, wherein all of the components are formed on a single semiconductor chip.

4. 发明授权

US5262026A Method of manufacturing a device having a superconducting film 失效
标题翻译：制造具有超导膜的器件的方法
公开(公告)号：US5262026A
公开(公告)日：1993-11-16
申请号：US908922
申请日：1992-07-02
申请人： Hideo Nojima , Masayoshi Koba , Masaya Nagata , Hidetaka Shintaku
发明人： Hideo Nojima , Masayoshi Koba , Masaya Nagata , Hidetaka Shintaku
IPC分类号： H01L39/14 , H01L39/24 , C25D13/02 , B05D5/12
CPC分类号： H01L39/2429 , H01L39/143 , Y10S505/741
摘要： In a method for manufacturing a device having a film of high temperature superconductor, a copper substrate is used in the electrophoretic deposition as a cathode on which fine powders of superconductor should be deposited, and the fine powders deposited on the substrate are fired in the conditions that they are sintered partially.In other methods for manufacturing such a device, a desired minute pattern of electrically conductive material as a cathode in the electrophoretic deposition is formed on a substrate, and a minute pattern of fine powders is deposited according to the pattern of the cathode. Then, the fine powders are fired to form a superconductor film. Such a desired pattern of the cathode is formed by the patterning of a film of an electrically insulating substrate. Such a desired pattern of the cathode is also formed by the patterning of an electrically insulating material, applied to an electrically conductive substrate.In a further method for manufacturing such a device, a desired minute pattern of electrically conductive material as a cathode in the electrophoretic deposition is formed on a substrate, while another pattern of electrically conductive material as an anode is formed on the same substrate near the former pattern so as to keep a constant distance. The fine powders deposited on the former pattern are fired to form a superconductor film.
摘要翻译：在制造具有高温超导体膜的器件的方法中，在电泳沉积中使用铜衬底作为阴极，在其上沉积超导体的细粉末，并且沉积在衬底上的细粉末在条件下烧制它们被部分烧结。在制造这种器件的其它方法中，在基片上形成电泳沉积中作为阴极的导电材料的期望微小图案，并根据阴极的图案沉积细微粉末的微小图案。然后，烧制细粉以形成超导膜。通过图案化电绝缘基板的膜来形成阴极的这种期望的图案。阴极的这种期望图案也通过施加到导电基底上的电绝缘材料的图案形成。在制造这种器件的另一种方法中，在基片上形成作为电泳沉积中阴极的导电材料的期望的微小图案，而作为阳极的导电材料的另一图案形成在靠近前者的同一衬底上模式，以保持恒定的距离。将沉积在前一图案上的细粉末烧制以形成超导薄膜。

5. 发明授权

US5491410A Superconducting magnetic sensor having a ferromagnetic element for converging an external magnetic field 失效
标题翻译：具有用于会聚外部磁场的铁磁元件的超导磁传感器
公开(公告)号：US5491410A
公开(公告)日：1996-02-13
申请号：US993241
申请日：1992-12-17
申请人： Hideo Nojima , Hidetaka Shintaku , Masaya Nagata , Manabu Fujimoto , Masayoshi Koba
发明人： Hideo Nojima , Hidetaka Shintaku , Masaya Nagata , Manabu Fujimoto , Masayoshi Koba
IPC分类号： G01R33/00 , G01R33/035 , G01R33/09 , H01L39/22 , G01R33/06
CPC分类号： G01R33/00 , G01R33/0352 , Y10S505/845
摘要： A superconductive magnetoresistor has a substrate, a ceramic superconductive film which is formed on one face of the substrate, ferromagnetic elements for focusing an external magnetic field, and an insulating film. One of the ferromagnetic elements is integrally combined with the other face of the substrate. The other of the ferromagnetic elements is combined with the ceramic superconductive film thorough the insulating film.
摘要翻译：超导磁电阻器具有衬底，形成在衬底的一个面上的陶瓷超导膜，用于聚焦外部磁场的铁磁元件和绝缘膜。铁磁元件中的一个与基板的另一面一体地组合。另外的铁磁元件通过绝缘膜与陶瓷超导膜组合。

6. 发明授权

US5352978A Apparatus for sensing a magnetic field with a superconductive material 失效
标题翻译：用超导材料感测磁场的装置
公开(公告)号：US5352978A
公开(公告)日：1994-10-04
申请号：US34877
申请日：1993-03-19
申请人： Hideo Nojima , Hidetaka Shintaku , Masayoshi Koba
发明人： Hideo Nojima , Hidetaka Shintaku , Masayoshi Koba
IPC分类号： G01R33/035 , G01R33/06 , H01L39/12 , H01L39/16
CPC分类号： G01R33/0352 , Y10S505/701 , Y10S505/702 , Y10S505/845
摘要： An apparatus of sensing a magnetic field using a ceramic superconductor magneto-resistive element having a superconductor magneto resistive effect of non linear characteristic against the applied magnetic field, there is provided a coil for applying a bias magnetic field to the magneto-resistive element, the coil is connected to a feed back power source for supplying current for holding the output of the magneto-resistive element constant value, whereby the applied magnetic field is measured by the current supplied to the coil.There is disclosed also a device for sensing a magnetic field using a magneto-resistive element comprising a superconductor member having weak coupling grain boundaries, said device comprising means for applying A.C. bias magnetic field to said element, and means for taking out an output voltage of the element generated by application of the bias magnetic field as the signal representing the intensity of the applied magnetic field.
摘要翻译：使用具有针对所施加的磁场的非线性特性的超导体磁阻效应的陶瓷超导体磁阻元件感测磁场的装置，提供用于向磁阻元件施加偏置磁场的线圈，线圈连接到用于提供电流的反馈电源，用于保持磁阻元件的输出恒定值，由此施加的磁场由提供给线圈的电流测量。还公开了一种用于使用包括具有弱耦合晶界的超导体部件的磁阻元件来感测磁场的装置，所述装置包括用于向所述元件施加AC偏置磁场的装置，以及用于取出通过施加偏置磁场产生的元件作为表示所施加磁场强度的信号。

7. 发明授权

US5254945A Magneto-resistive superconductive device and method for sensing magnetic fields 失效
标题翻译：磁阻超导装置及感应磁场的方法
公开(公告)号：US5254945A
公开(公告)日：1993-10-19
申请号：US773765
申请日：1991-10-10
申请人： Hideo Nojima , Hidetaka Shintaku , Masayoshi Koba
发明人： Hideo Nojima , Hidetaka Shintaku , Masayoshi Koba
IPC分类号： G01R33/035 , G01R33/06
CPC分类号： G01R33/0352 , Y10S505/701 , Y10S505/702 , Y10S505/845
摘要： A method for sensing an applied magnetic field uses a superconductor element with superconductive material as a sensor. The element is cooled to its superconducting state and current is supplied to the element. An applied magnetic field is applied to the superconducting material and an output from the superconductor element is fed to a feed back power source. In the feedback power source a comparison is made between an input voltage from the superconductive element and a reference voltage. Current is applied to a coil for applying a bias magnetic field to the superconductor element based on the comparison. With this method, the input voltage and the reference voltage are made as equal as possible. A superconductive device includes a coil for applying an AC power source and a coil for applying a DC power source. The DC power source can be set at various values and the application of the DC power source, which is a bias voltage, changes the output of the superconductive element by changing the electrical wave form outputted from the superconductive element.
摘要翻译：用于感测所施加的磁场的方法使用具有超导材料的超导体元件作为传感器。元件被冷却到其超导状态，并且电流被供应到元件。对超导材料施加施加的磁场，并且将来自超导体元件的输出馈送到反馈电源。在反馈电源中，比较来自超导元件的输入电压和参考电压。基于比较，将电流施加到用于向超导体元件施加偏置磁场的线圈。使用该方法，使输入电压和参考电压尽可能相等。超导装置包括用于施加AC电源的线圈和用于施加DC电源的线圈。直流电源可以设定为各种值，并且作为偏置电压的直流电源的应用通过改变从超导元件输出的电波形来改变超导元件的输出。

8. 发明授权

US5550101A Superconducting magnetoresistive element having a plurality of weak-coupling portions and a method of fabricating the same 失效
标题翻译：具有多个弱耦合部分的超导磁阻元件及其制造方法
公开(公告)号：US5550101A
公开(公告)日：1996-08-27
申请号：US302390
申请日：1994-09-08
申请人： Masaya Nagata , Hideo Nojima , Masayoshi Koba
发明人： Masaya Nagata , Hideo Nojima , Masayoshi Koba
IPC分类号： G01R33/035 , H01L39/22 , H01L43/08
CPC分类号： H01L39/225 , H01L43/08
摘要： A superconducting magnetoresistive element has superconducting portions having a high critical current density and weak-coupling portions having a low critical current density. The superconducting portions and weak-coupling portions are alternately arranged and connected in series. The superconducting magnetoresistive element is fabricated, for example, by forming semiconductor films at a plurality of sites on a substrate in a manner that the semiconductor films are spaced from each other, then forming a superconducting thin film all over the substrate and processing the superconducting thin film into a line pattern which passes over the plurality of semiconductor films, and heat-treating the substrate to diffuse a constituent element of the semiconductor films in the superconducting thin film. Portions of the superconducting thin film overlying the semiconductor films become the weak-coupling portions and the rest portions of the superconducting thin film become the superconducting portions.
摘要翻译：超导磁阻元件具有具有高临界电流密度的超导部分和具有低临界电流密度的弱耦合部分。超导部和弱耦合部交替地串联连接。超导磁阻元件例如通过在半导体膜彼此间隔开的方式在衬底上的多个位置处形成半导体膜，然后在衬底上形成超导薄膜并加工超导薄膜薄膜变成通过多个半导体薄膜的线图案，并且对该基片进行热处理以使超导薄膜中的半导体薄膜的构成元件扩散。覆盖半导体膜的超导薄膜的部分成为弱耦合部分，超导薄膜的其余部分成为超导部分。

9. 发明授权

US5318951A Method for fabricating oxide superconducting coatings 失效
标题翻译：制造氧化物超导涂层的方法
公开(公告)号：US5318951A
公开(公告)日：1994-06-07
申请号：US17292
申请日：1993-02-12
申请人： Hidetaka Shintaku , Hideo Nojima , Masayoshi Koba , Masaya Nagata
发明人： Hidetaka Shintaku , Hideo Nojima , Masayoshi Koba , Masaya Nagata
IPC分类号： H01L39/24 , H01L39/00 , C25D13/02
CPC分类号： H01L39/2429
摘要： A copper substrate is immersed into a solution in which a Y-Ba-Cu-O series oxide superconducting fine powder is dispersed into an acetone solution and an electric field is applied thereto. A coating deposited on the copper substrate by electrophoresis is sintered with high temperature in vacuum or in an inert gas atmosphere and then subjected to heat-treatment for oxygen composition ratio in an atmosphere of oxygen or air under 500.degree. C. This method prevents occurrence of a CuO layer, which would conventionally be formed at an interface between a Y-Ba-Cu-O film and a Cu substrate disadvantageously, and moreover enables fabrication of superconducting coatings having satisfactory characteristics.
摘要翻译：将铜基材浸入其中将Y-Ba-Cu-O系氧化物超导细粉末分散在丙酮溶液中并向其施加电场的溶液中。通过电泳沉积在铜基底上的涂层在真空或惰性气体气氛中高温烧结，然后在氧气或空气气氛中在500℃下对氧组成比进行热处理。这种方法可以防止通常在Y-Ba-Cu-O膜和Cu衬底之间的界面处形成CuO层，并且还能够制造具有令人满意的特性的超导涂层。

10. 发明授权

US5219828A Method for fabricating oxide superconducting coatings 失效
标题翻译：氧化物超导涂料的制备方法
公开(公告)号：US5219828A
公开(公告)日：1993-06-15
申请号：US769459
申请日：1991-10-01
申请人： Hidetaka Shintaku , Hideo Nojima , Masayoshi Koba , Masaya Nagata
发明人： Hidetaka Shintaku , Hideo Nojima , Masayoshi Koba , Masaya Nagata
IPC分类号： H01L39/24
CPC分类号： H01L39/2429
摘要： A copper substrate is immersed into a solution in which a Y-Ba-Cu-O series oxide superconducting fine powder is dispersed into an acetone solution and an electric field is applied thereto. A coating deposited on the copper substrate by electrophoresis is sintered with high temperature in vacuum or in an inert gas atmosphere and then subjected to heat-treatment for oxygen composition ratio in an atmosphere of oxygen or air under 500.degree. C. This method prevents occurrence of a CuO layer, which would conventionally be formed at an interface between a Y-Ba-Cu-O film and a Cu substrate disadvantageously, and moreover enables fabrication of superconducting coatings having satisfactory characteristics.

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