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1. 发明专利

JP2006083260A Phosphor particle, phosphor particle dispersion, lighting device and display containing them 有权
标题翻译：磷光体颗粒，磷光体分散体，照明装置和包含它们的显示器
公开(公告)号：JP2006083260A
公开(公告)日：2006-03-30
申请号：JP2004268203
申请日：2004-09-15
申请人： Shizuo Fujita , Mitsuru Funato , Masafumi Harada , Yoichi Kawakami , Sharp Corp , シャープ株式会社 , 雅史原田 , 養一川上 , 充船戸 , 静雄藤田
发明人： MORIOKA TATSUYA , SAITO HAJIME , TANETANI MOTOTAKA , FUJITA SHIGEO , FUJITA SHIZUO , KAWAKAMI YOICHI , FUNATO MITSURU , HARADA MASAFUMI
IPC分类号： C09K11/08 , C09K11/55 , C09K11/56 , C09K11/62 , C09K11/64 , F21V3/04 , F21V8/00 , F21V9/16 , F21Y101/02 , H01L33/32 , H01L33/50
摘要： PROBLEM TO BE SOLVED: To obtain a phosphor particle having high absorption efficiency and high luminance of exciting light and a phosphor particle dispersion having excellent color rendering properties and a lighting device and a display device comprising them. SOLUTION: The phosphor particle 100 receives an exciting light 11 having an excitation energy E e , emits fluorescence, comprises a semiconductor core particle 101 having a band-gap energy E 1 and a semiconductor shell layer 102 having a band-gap energy E 2 , has relation of E 1 2 ≤E e , forms a discrete energy level having an energy between E 1 and E 2 in the semiconductor core particle 101 by coating the semiconductor core particle 101 with the semiconductor shell layer 102 and emits fluorescence based on an energy E between ground states 111c and 111v at the energy level. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：获得具有高吸收效率和高亮度的激发光的荧光体颗粒和具有优异显色性的荧光体颗粒分散体和照明装置以及包括它们的显示装置。解决方案：荧光体颗粒100接收具有激发能E E SB的激发光11，发射荧光，包括具有带隙能量E 1的半导体芯颗粒101， SB>和具有带隙能量E 2 的半导体外壳层102具有E 1 2 ≤E 1 和E 2 之间的能量的离散能级半导体外壳层102，并且基于能量级的基态111c和111v之间的能量E发射荧光。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2006083257A Phosphor and method for producing the same 有权
标题翻译：磷光体及其制造方法
公开(公告)号：JP2006083257A
公开(公告)日：2006-03-30
申请号：JP2004268169
申请日：2004-09-15
申请人： Masafumi Harada , Yoichi Kawakami , Sharp Corp , シャープ株式会社 , 雅史原田 , 養一川上
发明人： RYORIN TATSUYA , SAITO HAJIME , YUASA TAKAYUKI , TANETANI MOTOTAKA , FUJITA SHIGEO , KAWAKAMI YOICHI , HARADA MASAFUMI
IPC分类号： C09K11/06 , C09K11/08 , C09K11/62 , C09K11/64
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a new phosphor handleable in air, producible at a lower reaction temperature than conventional reaction temperatures and affording the resultant phosphor exhibiting quantum effects and to provide the phosphor obtained thereby.
SOLUTION: The phosphor is obtained by dispersing phosphor particles containing at least nitrogen as a constituent element so as to coordinate with amide groups forming peptide bonds in a polymer having the peptide bonds. The method for producing the phosphor comprises a step of mixing a phosphor particle precursor containing a metal element with diamines and a step of further mixing dicarboxylic acids forming the peptide bonds with the diamines, polycondensing the diamines with the dicarboxylic acids and synthesizing the polymer having the peptide bonds.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种可在空气中可处理的新型荧光体的制造方法，其可在比常规反应温度低的反应温度下生产，并提供产生的量子效应的荧光体，并提供由此获得的荧光体。解决方案：通过将含有至少氮作为构成元素的荧光体粒子分散，以便与具有肽键的聚合物中形成肽键的酰胺基团配位而获得荧光体。荧光体的制造方法包括将含有金属元素的荧光体粒子前体与二胺混合的步骤，以及与二胺进一步混合形成肽键的二羧酸的步骤，将二胺与二羧酸缩聚，合成具有肽键。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2009044137A Light-emitting device and phosphor 有权
标题翻译：发光装置和磷光体
公开(公告)号：JP2009044137A
公开(公告)日：2009-02-26
申请号：JP2008176504
申请日：2008-07-07
申请人： Masafumi Harada , Yoichi Kawakami , Yusuke Mori , Takatomo Sasaki , Sharp Corp , シャープ株式会社 , 考友佐々木 , 雅史原田 , 養一川上 , 勇介森
发明人： ISHIDA SHINYA , MORIOKA TATSUYA , HANAOKA DAISUKE , TANETANI MOTOTAKA , FUJITA SHIGEO , KAWAKAMI YOICHI , HARADA MASAFUMI , SASAKI TAKATOMO , MORI YUSUKE
IPC分类号： H01S5/022 , C09K11/08 , C09K11/62 , C09K11/64 , H01L33/06 , H01L33/32 , H01L33/42 , H01L33/50 , H01S5/026
CPC分类号： Y02B20/181
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting device provided with a light source for emitting primary light and a phosphor for absorbing the primary light and emitting secondary light, capable of emitting white light of high luminance, low power consumption and long service life with few damages on an environment. SOLUTION: A fluorescent material included in the phosphor provided to the light-emitting device is the particulate crystal of a III-V compound semiconductor, wherein the phosphor has three layers, and the layers are laminated so as to reduce the size of the fluorescent material from the incidence side of the primary light to the emission side thereof. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种发光装置，其具有用于发射一次光的光源和用于吸收初级光和发出次级光的荧光体，能够发出高亮度，低功耗的白光，以及使用寿命长，环境损坏少。解决方案：提供给发光器件的荧光体中包含的荧光材料是III-V族化合物半导体的颗粒状晶体，其中磷光体具有三层，并且层压以减小尺寸荧光材料从初级光的入射侧到其发射侧。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2008258171A Planar light-emitting device 审中-公开
标题翻译：平面发光器件
公开(公告)号：JP2008258171A
公开(公告)日：2008-10-23
申请号：JP2008121294
申请日：2008-05-07
申请人： Shizuo Fujita , Yoichi Kawakami , Sharp Corp , シャープ株式会社 , 養一川上 , 静雄藤田
发明人： MORIOKA TATSUYA , ISHIDA SHINYA , HANAOKA DAISUKE , TANETANI MOTOTAKA , FUJITA SHIGEO , FUJITA SHIZUO , KAWAKAMI YOICHI
IPC分类号： F21V8/00 , F21V9/40 , F21Y101/02 , H01L33/32 , H01L33/50 , H01S5/022
摘要： PROBLEM TO BE SOLVED: To provide a lighting system that facilitates setting of color balance, as well as, is high in electrical/optical conversion efficiency and luminance.
SOLUTION: This planar light emitting device is provided with a light source 11 emitting a primary light; and a wavelength conversion part 12, comprising a plurality of phosphors, each absorbing the primary light to emit secondary light, having a peak wavelength longer than the peak wavelength of the primary light. The wavelength conversion part has an absorption band where the secondary light emitted from at least one of the phosphors is absorbed by the other phosphors and is structured, such that the plurality of phosphors comprise a plurality of cells arranged, in a planar shape that does not overlap one another in the optical path direction.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种便于设置色平衡的照明系统，以及高的电/光转换效率和亮度。解决方案：该平面发光器件设置有发射初级光的光源11; 以及波长转换部12，其包括多个荧光体，每个荧光体吸收初级光以发射次级光，其峰值波长比初级光的峰值波长长。波长转换部分具有吸收带，其中从至少一个荧光体发射的二次光被另一个荧光体吸收并且被构造成使得多个荧光体包括以不平行形状排列的多个单元在光路方向上彼此重叠。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2006083217A Method for producing phosphor 有权
标题翻译：生产磷光体的方法
公开(公告)号：JP2006083217A
公开(公告)日：2006-03-30
申请号：JP2004266903
申请日：2004-09-14
申请人： Masafumi Harada , Sharp Corp , Setsuhisa Tanabe , シャープ株式会社 , 雅史原田 , 勢津久田部
发明人： RYORIN TATSUYA , SAITO HAJIME , TANETANI MOTOTAKA , YUASA TAKAYUKI , HARADA MASAFUMI , TANABE SETSUHISA
IPC分类号： C09K11/08
摘要： PROBLEM TO BE SOLVED: To provide a method with which a rare earth phosphor having improved luminous efficiency can be produced by a simpler technique than conventional techniques.
SOLUTION: The method for producing the phosphor comprises mixing a phosphor matrix precursor with an activating precursor in a synthetic solvent. The method is carried out as follows. A rare earth inorganic salt is used as the activating precursor and heating is carried out in a solvent. Thereby, the synthesis is conducted in one stage.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种通过比常规技术更简单的技术可以产生具有改善的发光效率的稀土荧光体的方法。解决方案：制造荧光体的方法包括在合成溶剂中混合磷光体基质前体与活化前体。该方法如下进行。使用稀土类无机盐作为活化前体，在溶剂中进行加热。由此，合成在一个阶段进行。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2004083653A Light emitting device, phosphor and method for producing the same 审中-公开
公开(公告)号：JP2004083653A
公开(公告)日：2004-03-18
申请号：JP2002243502
申请日：2002-08-23
申请人： Shigeo Fujita , Masafumi Harada , Yoichi Kawakami , Yusuke Mori , Takatomo Sasaki , Sharp Corp , シャープ株式会社 , 佐々木考友 , 原田雅史 , 川上養一 , 森勇介 , 藤田茂夫
发明人： ISHIDA SHINYA , MORIOKA TATSUYA , HANAOKA DAISUKE , TANETANI MOTOTAKA , FUJITA SHIGEO , KAWAKAMI YOICHI , HARADA MASAFUMI , SASAKI TAKATOMO , MORI YUSUKE
IPC分类号： B82B1/00 , B82B3/00 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C09K11/08 , C09K11/62 , C09K11/64 , H01S3/08 , H01S5/022 , H01S5/323 , H01S5/343
CPC分类号： B82Y20/00 , C09K11/0883 , C09K11/62 , H01L33/502 , H01S5/005 , H01S5/02284 , H01S5/02296 , H01S5/34333 , Y10S977/783 , Y10S977/815 , Y10S977/816
摘要： PROBLEM TO BE SOLVED: To provide a light emitting device which comprises a light source for emitting a primary light and a phosphor absorbing the primary light and emitting a secondary light and has reduced damage to the environment, high luminance, low power consumption and a long life. SOLUTION: The light emitting device is obtained by using III-V semiconductor as a material for an illuminant and comprises the fine particle crystal of the semiconductor having ≤2,800 mm 3 volume. The light emitted by the fine particle crystal depends on the volume of the crystal and the wavelength range of the secondary light is regulated by making the fine particle crystal have a volume distribution. COPYRIGHT: (C)2004,JPO

7. 发明专利

JP2004071357A Lighting device 有权
公开(公告)号：JP2004071357A
公开(公告)日：2004-03-04
申请号：JP2002229110
申请日：2002-08-06
申请人： Shigeo Fujita , Shizuo Fujita , Yoichi Kawakami , Sharp Corp , シャープ株式会社 , 川上養一 , 藤田茂夫 , 藤田静雄
发明人： MORIOKA TATSUYA , ISHIDA SHINYA , HANAOKA DAISUKE , TANETANI MOTOTAKA , FUJITA SHIGEO , FUJITA SHIZUO , KAWAKAMI YOICHI
IPC分类号： G02B6/00 , F21V5/00 , F21V5/04 , F21V7/00 , F21V7/20 , F21V8/00 , F21V9/08 , F21V29/00 , F21Y101/02 , H01L33/32 , H01L33/50 , H01L33/60 , H01L33/00
CPC分类号： A61B1/0653 , G02B6/005 , G02F2001/133614
摘要： PROBLEM TO BE SOLVED: To provide a lighting device capable of setting a color balance easily with high electro-optical conversion efficiency and high brightness.
SOLUTION: A lighting device 10 includes a light source 11 emitting a primary light, and a wavelength conversion portion 12 which absorbs the primary light and then emits a secondary light having a longer peak wavelength than that of the primary light. The wavelength conversion portion 12 is laminated in order of an optical direction from red 13, green 14, and blue phosphor 15. Thus, every secondary light emitted from respective phosphors 13 to 15 is not absorbed by the other phosphors emitting the other colors, so that white light produced by mixing the three colors is emitted from the lighting device 10.
COPYRIGHT: (C)2004,JPO

8. 发明专利

JP2008263228A Semiconductor light emitting element, and method of manufacturing the same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：JP2008263228A
公开(公告)日：2008-10-30
申请号：JP2008177951
申请日：2008-07-08
申请人： Sharp Corp , シャープ株式会社
发明人： TANETANI MOTOTAKA
IPC分类号： H01S5/323 , H01L33/22 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To prevent degradation of light emitting efficiency and deterioration of reliability when a semiconductor light emitting element is further formed on a continuous film semiconductor layer formed so as to differ in the substrate, lattice constant, or thermal expansion coefficient, using a partial growth suppressing structure. SOLUTION: This semiconductor light emitting element has a sapphire substrate, a growth suppressing structure formed on the sapphire substrate, a GaN continuous film semiconductor layer formed on the sapphire substrate and the growth suppressing structure, and an active layer which generates light formed on the GaN continuous film semiconductor layer, wherein the growth suppressing structure consists of either a groove structure or a concavo-convex structure formed in the sapphire substrate, and a surface of the GaN continuous film semiconductor layer is flat. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题为了防止在形成为不同基板，晶格常数或热膨胀系数的连续膜半导体层上进一步形成半导体发光元件时发光效率的降低和可靠性的劣化，使用部分生长抑制结构。解决方案：该半导体发光元件具有蓝宝石衬底，形成在蓝宝石衬底上的生长抑制结构，形成在蓝宝石衬底上的GaN连续膜半导体层和生长抑制结构，以及产生形成光的有源层在GaN连续膜半导体层上，其中生长抑制结构由在蓝宝石衬底中形成的凹槽结构或凹凸结构组成，并且GaN连续膜半导体层的表面是平坦的。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2007165344A Nitride semiconductor laser element, and method of manufacturing same 有权
标题翻译：氮化物半导体激光元件及其制造方法
公开(公告)号：JP2007165344A
公开(公告)日：2007-06-28
申请号：JP2005355574
申请日：2005-12-09
申请人： Sharp Corp , シャープ株式会社
发明人： OMI SUSUMU , TAKATANI KUNIHIRO , YAMASHITA FUMIO , TANETANI MOTOTAKA
IPC分类号： H01S5/042 , H01S5/22 , H01S5/343
CPC分类号： H01S5/32341 , H01S5/0202 , H01S5/0425 , H01S2301/176
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element where a p-side electrode is hard to be peeled off from a nitride semiconductor lamination at the time of cleaving a wafer, and non-uniform injection of current and a defect of a current-optical output characteristic are hard to occur, and to provide a method of manufacturing the same.
SOLUTION: An insulating film 15 and the p-side electrode 16 are formed on the nitride semiconductor lamination 20 formed on a substrate 11 in order. An end electrode protection layer 18 is formed on an upper part at a periphery of positions becoming cleavage faces 13 and 14 of the p-side electrode 16, and the wafer is obtained. Thus, the nitride semiconductor laser element 10 is perfected by cleaving the wafer. At the time of cleavage, the p-side electrode 16 is protected by the end electrode protection layer 18. Thus, it is hard to be peeled off from the nitride semiconductor lamination 20.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供在切割晶片时难以将p侧电极从氮化物半导体层压体剥离的氮化物半导体激光元件，以及电流和缺陷的不均匀注入电流光输出特性难以发生，并提供其制造方法。解决方案：在基板11上形成的氮化物半导体层叠体20上依次形成绝缘膜15和p侧电极16。端面电极保护层18形成在p侧电极16的切割面13,14的位置的周边的上部的上部，得到晶片。因此，通过切割晶片来完善氮化物半导体激光元件10。在切割时，p侧电极16被端电极保护层18保护。因此，难以从氮化物半导体层压体20剥离。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2007131527A Nitride semiconductor substrate, nitride semiconductor laser element, manufacturing method of nitride semiconductor substrate, and manufacturing method of nitride semiconductor laser element 审中-公开
标题翻译：氮化物半导体衬底，氮化物半导体激光器元件，氮化物半导体衬底的制造方法和氮化物半导体激光器元件的制造方法
公开(公告)号：JP2007131527A
公开(公告)日：2007-05-31
申请号：JP2006344919
申请日：2006-12-21
申请人： Sharp Corp , Sumitomo Electric Ind Ltd , シャープ株式会社 , 住友電気工業株式会社
发明人： YUASA TAKAYUKI , UEDA YOSHIHIRO , ITO SHIGETOSHI , TANETANI MOTOTAKA , TANI YOSHIHEI , MOTOKI KENSAKU
IPC分类号： C30B29/38 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor substrate suitable for a nitride semiconductor laser element in which crystal defects are reduced and a stress is relaxed. SOLUTION: In the nitride semiconductor substrate containing a nitride semiconductor, the following (1) a dislocation concentrated region and (2) a low dislocation region are contained. Besides, the surface of the nitride semiconductor substrate has an off-angle of 0.2°-1° from the (0001) plane. (1) A stripe-shaped high-density defect region is made a bottom and inclined planes comprising facet planes are formed at both sides of the bottom to form a V-shape, and crystal defects are concentrated at the lower part of the inclined planes by maintaining the inclined planes of the facet planes and growing to form a stripe-shaped and a variously shaped defect concentrated region. (2) The low dislocation region is a region except the dislocation concentrated region. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种适用于其中晶体缺陷减小并且应力松弛的氮化物半导体激光元件的氮化物半导体衬底。解决方案：在包含氮化物半导体的氮化物半导体衬底中，包含以下（1）位错集中区域和（2）低位错区域。此外，氮化物半导体衬底的表面与（0001）面的偏离角为0.2°-1°。（1）条状高密度缺陷区域形成为底部，并且在底部的两侧形成包括小平面的倾斜面以形成V形，并且晶体缺陷集中在倾斜平面的下部通过保持小平面的倾斜平面并生长以形成条状和各种形状的缺陷集中区域。（2）低位错区域是位错集中区域以外的区域。版权所有（C）2007，JPO＆INPIT

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