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    • 7. 发明专利
    • Semiconductor fine particle of group iii-v compound, and manufacturing method therefor
    • III-V族化合物的半导体精细颗粒及其制造方法
    • JP2009019067A
    • 2009-01-29
    • JP2007180661
    • 2007-07-10
    • Sharp Corpシャープ株式会社
    • KINOMOTO JUNICHIRYORIN TATSUYASAITO HAJIME
    • C09K11/70C09K11/08C09K11/74
    • PROBLEM TO BE SOLVED: To provide a semiconductor fine particle of a group III-V compound having high luminous efficiency, and a manufacturing method therefor. SOLUTION: This semiconductor fine particle of the group III-V compound is provided with a semiconductor fine crystal of the group III-V compound having at least one kind of the group III metal elements selected from the group comprising aluminum, gallium and indium, and having at least one kind of the group V elements selected from the group comprising phosphorous and arsenic, and an amino group, and the group V element on a surface of the semiconductor fine crystal is coupled with the nitrogen element of the amino group expressed by general formula -NR 1 (1) and/or general formula -NR 1 R 2 (2) and/or general formula -NR 1 R 2 R 3 (3), where R 1 , R 2 , R 3 are same or different, and represent each hydrogen and/or a hydrocarbon group, in the semiconductor fine particle of the group III-V compound. The present invention provides the manufacturing method therefor. COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:提供具有高发光效率的III-V族化合物的半导体微粒及其制造方法。 解决方案:III-V族化合物的这种半导体细颗粒具有III-V族化合物的半导体细晶,其具有选自铝,镓和镓的至少一种III族金属元素, 铟,并且具有选自磷和砷的组中的至少一种V族元素和氨基,并且半导体细晶的表面上的第V族元素与氨基的氮元素 由通式-NR SB(1)和/或通式-NR SB(2)表示,和/或通式 - (3)其中R SB 1,R SB 2,SB SB 在第III-V族化合物的半导体微粒中,R SB 3相同或不同,表示各个氢和/或烃基。 本发明提供了其制造方法。 版权所有(C)2009,JPO&INPIT
    • 8. 发明专利
    • Nanocrystal particle phosphor, coated nanocrystal particle phosphor and manufacturing method of the coated nanocrystal particle phosphor
    • 纳米颗粒磷光体,涂层纳米颗粒磷光体和涂层纳米颗粒磷光体的制造方法
    • JP2008094968A
    • 2008-04-24
    • JP2006278627
    • 2006-10-12
    • Sharp Corpシャープ株式会社
    • RYORIN TATSUYASAITO HAJIME
    • C09K11/08B82B1/00B82B3/00C09K11/62
    • C09K11/62C09K11/025C09K11/0883Y10S977/816Y10S977/817Y10S977/83Y10S977/834Y10T428/2991
    • PROBLEM TO BE SOLVED: To provide a nanocrystal particle phosphor which contains a group 13 nitride mixed-crystal semiconductor, is capable of controlling the mixed-crystal ratio in the group 13 nitride mixed-crystal semiconductor, has a high luminous efficiency and is excellent in reliability, a coated nanocrystal particle phosphor with an improved dispersibility, and a manufacturing method thereof. SOLUTION: The nanocrystal particle phosphor has a core/shell structure comprising a core made of a group 13 nitride semiconductor and a shell membrane which is made of the group 13 nitride mixed-crystal semiconductor and covers the core. In the coated nanocrystal particle phosphor, a modified organic molecule is bound and/or applied to the nanocrystal particle phosphor. In the manufacturing method of the coated nanocrystal particle phosphor, a mixed solution containing the core made of the group 13 nitride semiconductor, a nitride-containing compound, a compound containing a group 13 element and the modified organic molecule is heated. COPYRIGHT: (C)2008,JPO&INPIT
    • 解决的问题为了提供含有13族氮化物混晶半导体的纳米晶粒子荧光体,能够控制13族氮化物混晶半导体中的混晶比,具有高的发光效率和 其可靠性优异,分散性提高的被覆纳米晶粒子荧光体及其制造方法。 解决方案:纳米晶体颗粒磷光体具有包含由13族氮化物半导体构成的芯和由氮化硅族氮化物混晶半导体构成并覆盖该芯的壳膜的芯/壳结构。 在涂覆的纳米晶粒子荧光体中,修饰的有机分子结合和/或施加到纳米晶粒子荧光体上。 在涂覆的纳米晶粒子荧光体的制造方法中,加热含有由氮化硅族13族组成的核,含氮化物的化合物,含有第13族元素的化合物和改性有机分子的混合溶液。 版权所有(C)2008,JPO&INPIT
    • 9. 发明专利
    • Oxide semiconductor laser element
    • 氧化物半导体激光元件
    • JP2005039140A
    • 2005-02-10
    • JP2003276618
    • 2003-07-18
    • Sharp Corpシャープ株式会社
    • SAITO HAJIME
    • H01S5/347
    • PROBLEM TO BE SOLVED: To provide a highly reliable low noise oxide semiconductor laser element.
      SOLUTION: A ZnO based semiconductor laser element has a quantum well active layer 105 including a ZnO barrier layer and a Cd
      0.1 Zn
      0.9 O well layer and performs self oscillation. Stimulated emission can thereby be realized with extremely high quantum efficiency utilizing powerful exciton binding energy and since self oscillation characteristics are provided, noise and power consumption can be reduced.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供高可靠性的低噪声氧化物半导体激光元件。 解决方案:ZnO基半导体激光元件具有包括ZnO阻挡层和Cd 0.1 Zn 0.9 O阱层的量子阱有源层105,并执行自振荡 。 因此,利用强大的激子结合能,能够以极高的量子效率来实现受激发射,并且由于提供了自振动特性,可以降低噪声和功耗。 版权所有(C)2005,JPO&NCIPI