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    • 3. 发明申请
    • LVDS OUTPUT DRIVER
    • LVDS输出驱动器
    • US20090167369A1
    • 2009-07-02
    • US12146723
    • 2008-06-26
    • Shiue-Shin LiuTse-Hsiang Hsu
    • Shiue-Shin LiuTse-Hsiang Hsu
    • H03K3/00
    • H03K19/018528H04L25/0276
    • An output driver is disclosed. The output driver has a pair of differential outputs coupled to a first supply voltage via a pair of load devices and comprises a current source, a pair of low voltage transistors, a pair of high voltage transistors, and a resistor. The current source has one end coupled to a second supply voltage. Each of the low voltage transistors has a first terminal coupled to the other end of the current source, a second terminal receiving a low voltage signal, and a third terminal. Each of the high voltage transistors has a first terminal coupled to the third terminal of a corresponding one of the low voltage transistors, a second terminal coupled to a bias voltage and a third terminal coupled to the output. The resistor is connected between the third terminals of the high voltage transistors.
    • 公开了一种输出驱动器。 输出驱动器具有通过一对负载装置耦合到第一电源电压的一对差分输出,并且包括电流源,一对低压晶体管,一对高压晶体管和电阻器。 电流源具有耦合到第二电源电压的一端。 每个低电压晶体管具有耦合到电流源的另一端的第一端子,接收低电压信号的第二端子和第三端子。 每个高压晶体管具有耦合到相应的一个低压晶体管的第三端子的第一端子,耦合到偏置电压的第二端子和耦合到输出端的第三端子。 电阻器连接在高压晶体管的第三端子之间。
    • 4. 发明申请
    • PHASE DETECTOR AND RELATED PHASE DETECTING METHOD THEREOF
    • 相位检测器及其相关检测方法
    • US20070047687A1
    • 2007-03-01
    • US11306413
    • 2005-12-27
    • Tse-Hsiang HsuShiue-Shin Liu
    • Tse-Hsiang HsuShiue-Shin Liu
    • H03D3/24
    • H03D13/004
    • A phase detector for detecting a phase difference between a first signal and a second signal is disclosed. The phase detector includes: a difference determining module, a phase leading/lagging determining module, and a phase determining module. The difference determining module is used for outputting a pulse having a period in which a logic level of the first signal is different from a logic level of the second signal. The phase leading/lagging determining module is used for outputting an detection signal to identify a phase leading/lagging relationship between the first signal and the second signal. The phase determining module is coupled to the difference determining module and the phase leading/lagging determining module for combining the pulse and the detection signal to output a result signal, wherein the result signal comprises difference and leading/lagging information between the first and the second signal.
    • 公开了一种用于检测第一信号和第二信号之间的相位差的相位检测器。 相位检测器包括:差分确定模块,相位前导/滞后确定模块和相位确定模块。 差分确定模块用于输出具有第一信号的逻辑电平与第二信号的逻辑电平不同的周期的脉冲。 相位前导/滞后判定模块用于输出检测信号,以识别第一信号和第二信号之间的相位前导/滞后关系。 相位确定模块耦合到差分确定模块和相位前导/滞后确定模块,用于组合脉冲和检测信号以输出结果信号,其中结果信号包括第一和第二之间的差分和前进/滞后信息 信号。
    • 5. 发明授权
    • Phase lock loop circuits
    • 锁相环电路
    • US08169265B2
    • 2012-05-01
    • US12431842
    • 2009-04-29
    • Shiue-Shin Liu
    • Shiue-Shin Liu
    • H03L7/00
    • H03L7/0893H03L7/093H03L7/099H03L2207/06
    • A phase lock loop circuit is provided. A phase frequency detector detects a phase difference between a feedback signal and a reference signal, and generates a phase error signal in response to the detected phase difference. A charge pump consists of at least one core device and outputs a current signal based on the phase error signal. An active loop filter receives and transfers the current signal into a control signal. Operating voltage of the active loop filter is higher than operating voltage of the charge pump. A controlled oscillator receives the control signal and generates an output signal in response to the control signal. A feedback divider receives the output signal to generate the feedback signal.
    • 提供锁相环电路。 相位频率检测器检测反馈信号和参考信号之间的相位差,并且响应于检测到的相位差产生相位误差信号。 电荷泵由至少一个核心装置组成,并根据相位误差信号输出电流信号。 有源环路滤波器接收并将当前信号传送到控制信号中。 有源环路滤波器的工作电压高于电荷泵的工作电压。 控制振荡器接收控制信号并响应于控制信号产生输出信号。 反馈分频器接收输出信号以产生反馈信号。
    • 6. 发明申请
    • BIAS CIRCUIT AND PHASE-LOCKED LOOP CIRCUIT USING THE SAME
    • 使用相同的偏置电路和相位锁定环路
    • US20110063002A1
    • 2011-03-17
    • US12757043
    • 2010-04-09
    • Shiue-Shin Liu
    • Shiue-Shin Liu
    • H03L7/08G05F3/02
    • G05F3/242H03L7/0995
    • A bias circuit for generating an output bias current includes a first transistor, a passive component, a second transistor, and a bias current generator. The first transistor has a first node coupled to a first reference voltage, a second node, and a control node. The passive component is coupled between the first reference voltage and the control node of the first transistor. The second transistor has a first node coupled to the control node of the first transistor, a control node coupled to the second node of the first transistor, and a second node for providing the output bias current according to a current passing through the passive component. The bias current generator is coupled to the second node of the first transistor, and implemented for providing the first transistor with a bias current.
    • 用于产生输出偏置电流的偏置电路包括第一晶体管,无源部件,第二晶体管和偏置电流发生器。 第一晶体管具有耦合到第一参考电压的第一节点,第二节点和控制节点。 无源部件耦合在第一参考电压和第一晶体管的控制节点之间。 第二晶体管具有耦合到第一晶体管的控制节点的第一节点,耦合到第一晶体管的第二节点的控制节点和用于根据通过无源部件的电流提供输出偏置电流的第二节点。 偏置电流发生器耦合到第一晶体管的第二节点,并且被实现用于向第一晶体管提供偏置电流。
    • 9. 发明授权
    • Single-electron transistor and fabrication method thereof
    • 单电子晶体管及其制造方法
    • US06894352B2
    • 2005-05-17
    • US10602890
    • 2003-06-25
    • Shu-Fen HuYung-Chun WuWen-Tai LuShiue-Shin LiuTiao-Yuan HuangTien-Sheng Chao
    • Shu-Fen HuYung-Chun WuWen-Tai LuShiue-Shin LiuTiao-Yuan HuangTien-Sheng Chao
    • H01L21/335H01L29/76H01L27/01
    • B82Y10/00H01L29/66439H01L29/7613Y10S438/947Y10S977/937
    • A method for fabricating a single-electron transistor (SET). A one dimensional channel is formed between source and drain on a silicon-on-insulator substrate, and the separated polysilicon sidewall spacer gates are formed by electron-beam lithographically etching process in a self-aligned manner. Operation of the single-electron transistor with self-aligned polysilicon sidewall spacer gates is achieved by applying external bias to the self-aligned polysilicon sidewall spacer gates to form two potential barriers and a quantum dot capable of storage charges between the two potential barriers. A metal upper gate is finally formed and biased to induce a two-dimensional electron gas (2DEG) and control the energy level of the quantum well. Accordingly, the method of the invention comprises a combination of electron beam (E-beam) lithography with multilayer-aligned direct writing technology, oxidation, and wet etching to form a nanoscale one-dimensional channel between source and drain on a silicon-on-insulator substrate.
    • 一种用于制造单电子晶体管(SET)的方法。 在绝缘体上硅衬底上的源极和漏极之间形成一维沟道,并且以自对准方式通过电子束光刻蚀工艺形成分离的多晶硅侧壁间隔栅极。 通过将外部偏置施加到自对准多晶硅侧壁间隔栅上来形成具有自对准多晶硅侧壁间隔栅极的单电子晶体管的操作,以形成两个势垒和能够在两个势垒之间存储电荷的量子点。 金属上栅极最终形成并偏置以诱导二维电子气(2DEG)并控制量子阱的能级。 因此,本发明的方法包括电子束(E-beam)光刻与多层排列直接写入技术的组合,氧化和湿蚀刻,以在硅 - 硅上形成源极和漏极之间的纳米级一维沟道 绝缘体基板。