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1. 发明申请

US20130186753A1 Titanium Target for Sputtering 有权
标题翻译：钛靶溅射
公开(公告)号：US20130186753A1
公开(公告)日：2013-07-25
申请号：US13824412
申请日：2011-10-24
申请人： Shiro Tsukamoto , Nobuhito Makino , Hideaki Fukuyo
发明人： Shiro Tsukamoto , Nobuhito Makino , Hideaki Fukuyo
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , C22C1/02 , C22C14/00 , C22F1/183 , C23C14/3414
摘要： Provided is a titanium target for sputtering having a Shore hardness Hs of 20 or more and a basal plane orientation ratio of 70% or less. In the titanium target for sputtering, the purity of titanium is 99.995 mass % or more, excluding gas components. It is an object of the present invention to provide a high-quality titanium target for sputtering, in which impurities are reduced, and which can prevent occurrence of cracking or breaking in high-power sputtering (high-rate sputtering), stabilize sputtering characteristics, and effectively suppress occurrence of particles during formation of a film.
摘要翻译：本发明提供一种肖氏硬度Hs为20以上，基面取向率为70％以下的溅射用钛靶。在用于溅射的钛靶中，钛的纯度为99.995质量％以上，不包括气体成分。本发明的目的是提供一种用于溅射的高质量钛靶，其中杂质减少，并且可以防止在大功率溅射（高速溅射）中发生破裂或断裂，稳定溅射特性，并且有效地抑制了在形成膜期间颗粒的发生。

2. 发明授权

US09068258B2 Titanium target for sputtering 有权
标题翻译：用于溅射的钛靶
公开(公告)号：US09068258B2
公开(公告)日：2015-06-30
申请号：US13824412
申请日：2011-10-24
申请人： Shiro Tsukamoto , Nobuhito Makino , Hideaki Fukuyo
发明人： Shiro Tsukamoto , Nobuhito Makino , Hideaki Fukuyo
IPC分类号： H01B1/02 , C23C14/34 , C22C14/00 , C22F1/18 , C22C1/02
CPC分类号： C23C14/3407 , C22C1/02 , C22C14/00 , C22F1/183 , C23C14/3414
摘要： Provided is a titanium target for sputtering having a Shore hardness Hs of 20 or more and a basal plane orientation ratio of 70% or less. In the titanium target for sputtering, the purity of titanium is 99.995 mass % or more, excluding gas components. It is an object of the present invention to provide a high-quality titanium target for sputtering, in which impurities are reduced, and which can prevent occurrence of cracking or breaking in high-power sputtering (high-rate sputtering), stabilize sputtering characteristics, and effectively suppress occurrence of particles during formation of a film.
摘要翻译：本发明提供一种肖氏硬度Hs为20以上，基面取向率为70％以下的溅射用钛靶。在用于溅射的钛靶中，钛的纯度为99.995质量％以上，不包括气体成分。本发明的目的是提供一种用于溅射的高质量钛靶，其中杂质减少，并且可以防止在大功率溅射（高速溅射）中发生破裂或断裂，稳定溅射特性，并且有效地抑制了在形成膜期间颗粒的发生。

3. 发明授权

US09666418B2 Titanium target for sputtering 有权
公开(公告)号：US09666418B2
公开(公告)日：2017-05-30
申请号：US14353507
申请日：2012-04-27
申请人： Shiro Tsukamoto , Nobuhito Makino , Atsushi Fukushima , Kazuto Yagi , Eiji Hino
发明人： Shiro Tsukamoto , Nobuhito Makino , Atsushi Fukushima , Kazuto Yagi , Eiji Hino
IPC分类号： C23C14/34 , H01J37/34 , C22C14/00 , C22C1/10
CPC分类号： H01J37/3426 , C22C1/10 , C22C14/00 , C23C14/3414
摘要： A high-purity titanium target for sputtering containing 0.5 to 5 mass ppm of S as an additive component, wherein the purity of the target excluding additive components and gas components is 99.995 mass percent or higher. An object of this invention is to provide a high-quality titanium target for sputtering which is free from fractures and cracks during high-power sputtering (high-rate sputtering) and is capable of stabilizing the sputtering characteristics.

4. 发明授权

US09530628B2 Titanium target for sputtering 有权
标题翻译：用于溅射的钛靶
公开(公告)号：US09530628B2
公开(公告)日：2016-12-27
申请号：US14009537
申请日：2012-02-03
申请人： Nobuhito Makino , Takeo Okabe , Shiro Tsukamoto
发明人： Nobuhito Makino , Takeo Okabe , Shiro Tsukamoto
IPC分类号： H01J37/34 , C23C14/34 , C22C14/00 , C22F1/18
CPC分类号： H01J37/3426 , C22C14/00 , C22F1/183 , C23C14/3407 , C23C14/3414 , H01J37/3429
摘要： A high-purity titanium target for sputtering, which contains, as additive components, one or more elements selected from Al, Si, S, Cl, Cr, Fe, Ni, As, Zr, Sn, Sb, B, and La in a total amount of 3 to 100 mass ppm, and of which the purity excluding additive components and gas components is 99.99 mass % or higher. An object of this invention is to provide a high-quality titanium target for sputtering, which is free from fractures and cracks during high-power sputtering (high-rate sputtering) and capable of stabilizing the sputtering characteristics.
摘要翻译：一种用于溅射的高纯度钛靶，其包含作为添加成分的一种或多种选自Al，Si，S，Cl，Cr，Fe，Ni，As，Zr，Sn，Sb，B和La中的一种元素总量为3〜100质量ppm，除添加成分和气体成分以外的纯度为99.99质量％以上。本发明的目的是提供一种用于溅射的高质量钛靶，其在高功率溅射（高速溅射）期间没有裂缝和裂纹，并且能够稳定溅射特性。

5. 发明申请

US20140027277A1 Titanium Target for Sputtering 有权
标题翻译：钛靶溅射
公开(公告)号：US20140027277A1
公开(公告)日：2014-01-30
申请号：US14009537
申请日：2012-02-03
申请人： Nobuhito Makino , Takeo Okabe , Shiro Tsukamoto
发明人： Nobuhito Makino , Takeo Okabe , Shiro Tsukamoto
IPC分类号： C23C14/14
CPC分类号： H01J37/3426 , C22C14/00 , C22F1/183 , C23C14/3407 , C23C14/3414 , H01J37/3429
摘要： A high-purity titanium target for sputtering, which contains, as additive components, one or more elements selected from Al, Si, S, Cl, Cr, Fe, Ni, As, Zr, Sn, Sb, B, and La in a total amount of 3 to 100 mass ppm, and of which the purity excluding additive components and gas components is 99.99 mass % or higher. An object of this invention is to provide a high-quality titanium target for sputtering, which is free from fractures and cracks during high-power sputtering (high-rate sputtering) and capable of stabilizing the sputtering characteristics.
摘要翻译：一种用于溅射的高纯度钛靶，其包含作为添加成分的一种或多种选自Al，Si，S，Cl，Cr，Fe，Ni，As，Zr，Sn，Sb，B和La中的一种元素总量为3〜100质量ppm，除添加成分和气体成分以外的纯度为99.99质量％以上。本发明的目的是提供一种用于溅射的高质量钛靶，其在高功率溅射（高速溅射）期间没有裂缝和裂纹，并且能够稳定溅射特性。

6. 发明申请

US20140251802A1 TITANIUM TARGET FOR SPUTTERING 有权
标题翻译： TITANIUM目标用于喷射
公开(公告)号：US20140251802A1
公开(公告)日：2014-09-11
申请号：US14353507
申请日：2012-04-27
申请人： Shiro Tsukamoto , Nobuhito Makino , Atsushi Fukushima , Kazuto Yagi , Eiji Hino
发明人： Shiro Tsukamoto , Nobuhito Makino , Atsushi Fukushima , Kazuto Yagi , Eiji Hino
IPC分类号： H01J37/34
CPC分类号： H01J37/3426 , C22C1/10 , C22C14/00 , C23C14/3414
摘要： A high-purity titanium target for sputtering containing 0.5 to 5 mass ppm of S as an additive component, wherein the purity of the target excluding additive components and gas components is 99.995 mass percent or higher. An object of this invention is to provide a high-quality titanium target for sputtering which is free from fractures and cracks during high-power sputtering (high-rate sputtering) and is capable of stabilizing the sputtering characteristics.
摘要翻译：一种用于溅射的高纯度钛靶，其含有0.5〜5质量ppm的S作为添加成分，其中，除添加成分和气体成分以外的目标的纯度为99.995质量％以上。本发明的目的是提供一种用于溅射的高质量钛靶，其在高功率溅射（高速溅射）期间没有裂缝和裂纹，并且能够稳定溅射特性。

7. 发明授权

US09951412B2 Sputtering target and/or coil, and process for producing same 有权
公开(公告)号：US09951412B2
公开(公告)日：2018-04-24
申请号：US13809189
申请日：2011-07-27
申请人： Kenichi Nagata , Nobuhito Makino
发明人： Kenichi Nagata , Nobuhito Makino
IPC分类号： C23C14/00 , C23C14/34 , C21D1/74 , C21D3/06 , C22C14/00 , C22F1/00 , C22F1/18 , C22C27/02 , H01J37/34
CPC分类号： C23C14/34 , C21D1/74 , C21D3/06 , C22C14/00 , C22C27/02 , C22F1/00 , C22F1/18 , C22F1/183 , C23C14/3414 , C23C14/3471 , H01J37/3426 , H01J37/3464 , H01J37/3491 , H01J37/3497 , Y10T29/49865
摘要： Provided is a sputtering target and/or a coil disposed at the periphery of a plasma-generating region for confining plasma. The target and/or the coil has a surface to be eroded having a hydrogen content of 500 μL/cm2 or less. In dealing with reduction in the hydrogen content of the surface of the target and/or the coil, the process of producing the target and/or the coil, in particular, the conditions for heating the surface of the target and/or the coil, which is thought to be cause of hydrogen occlusion, are appropriately regulated. As a result, hydrogen occlusion at the surface of the target can be reduced, and the degree of vacuum during sputtering can be improved. Thus, the present invention provides a target and/or a coil that has a uniform and fine structure, makes plasma stable, and allows a film to be formed with excellent uniformity and provides a method of producing the target and/or the coil.

8. 发明申请

US20140158532A1 HIGH-PURITY COPPER-MANGANESE-ALLOY SPUTTERING TARGET 审中-公开
标题翻译：高纯铜锰锰合金喷射目标
公开(公告)号：US20140158532A1
公开(公告)日：2014-06-12
申请号：US14235865
申请日：2012-09-05
申请人： Kenichi Nagata , Tomio Otsuki , Takeo Okabe , Nobuhito Makino , Atsushi Fukushima
发明人： Kenichi Nagata , Tomio Otsuki , Takeo Okabe , Nobuhito Makino , Atsushi Fukushima
IPC分类号： C23C14/14
CPC分类号： C23C14/14 , C22C9/05 , C23C14/3414 , H01J37/3426
摘要： Provided is a high-purity copper-manganese-alloy sputtering target comprising 0.05 to 20 wt. % of Mn, 2 wt ppm or less of C, and the remainder being Cu and inevitable impurities, wherein in formation of a film on a wafer by sputtering the target, the number of particles composed of C, at least one element selected from Mn, Si, and Mg, or a compound composed of C and at least one element selected from Mn, Si, and Mg and having a diameter of 0.20 μm or more is 30 or less on average. Particle generation during sputtering can be effectively suppressed by thus adding an appropriate amount of Mn element to copper and controlling the amount of carbon. In particular, a high-purity copper-manganese-alloy sputtering target that is useful for forming semiconductor copper alloy line having a self-diffusion suppression function is provided.
摘要翻译：提供了一种高纯度铜 - 锰合金溅射靶，其包含0.05-20重量％ Mn为2重量ppm以下，余量为Cu和不可避免的杂质，其中，在通过溅射靶材在晶片上形成膜时，由C组成的微粒数，选自Mn中的至少一种元素，Si和Mg，或由C和至少一种选自Mn，Si和Mg的元素组成的化合物，直径为0.20μm以上的化合物的平均值为30以下。通过向铜中添加适量的Mn元素并控制碳的量，能够有效地抑制溅射时的粒子产生。特别地，提供了可用于形成具有自扩散抑制功能的半导体铜合金线的高纯度铜 - 锰合金溅射靶。

9. 发明申请

US20140097084A1 High-Purity Copper-Manganese-Alloy Sputtering Target 有权
标题翻译：高纯度铜锰合金溅射靶
公开(公告)号：US20140097084A1
公开(公告)日：2014-04-10
申请号：US14118591
申请日：2012-09-06
申请人： Kenichi Nagata , Tomio Otsuki , Takeo Okabe , Nobuhito Makino , Atsushi Fukushima
发明人： Kenichi Nagata , Tomio Otsuki , Takeo Okabe , Nobuhito Makino , Atsushi Fukushima
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , C22C9/05 , C22F1/00 , C22F1/08
摘要： Provided is a high-purity copper-manganese-alloy sputtering target comprising 0.05 to 20 wt % of Mn and the remainder being Cu and inevitable impurities. The high-purity copper-manganese-alloy sputtering target is characterized in that the in-plane variation (CV value) in Mn concentration of the target is 3% or less. It is thus possible to form a thin film having excellent uniformity by adding an appropriate amount of a Mn element to copper and reducing the in-plane variation of the sputtering target. In particular, there is provided a high-purity copper-manganese-alloy sputtering target which is useful for improving the yield and the reliability of semiconductor products which are making progress in a degree of refinement and integration.
摘要翻译：提供了包含0.05〜20重量％的Mn，余量为Cu和不可避免的杂质的高纯度铜 - 锰合金溅射靶。高纯度铜锰合金溅射靶的特征在于靶的Mn浓度的面内变化（CV值）为3％以下。因此，通过向铜中添加适量的Mn元素并降低溅射靶的面内变化，可以形成具有优异均匀性的薄膜。特别是提供了一种高纯度的铜 - 锰合金溅射靶，其可用于提高在细化和集成度方面取得进步的半导体产品的产率和可靠性。

10. 发明申请

US20120135160A1 Method for Production of Non-Adhesive-Type Flexible Laminate 审中-公开
标题翻译：非粘合型柔性层压板的生产方法
公开(公告)号：US20120135160A1
公开(公告)日：2012-05-31
申请号：US13355603
申请日：2012-01-23
申请人： Nobuhito Makino
发明人： Nobuhito Makino
IPC分类号： B05D5/12 , B05D3/02 , B05D3/10
CPC分类号： H05K3/388 , H05K1/0346 , H05K3/381 , H05K2201/0154 , H05K2203/095 , Y10T428/12472
摘要： A non-adhesive-type flexible laminate including a polyimide film with at least one surface thereof being plasma-treated, a tie-coat layer formed on the plasma-treated surface, and a metal conductor layer fanned on the tie-coat layer is provided. A ratio (T/Rz) of a tie-coat layer thickness (T) to a 10-point mean roughness (Rz) of the plasma-treated polyimide film surface is made to be 2 or more. This improves initial adhesion, which is an indicator of adhesion strength of the non-adhesive-type flexible laminate (in particular, a two-layered, flexible laminate), and also increases adhesion of the laminate after heat aging (i.e., after being allowed to stand for 168 hours at 150° C. for 168 hours in the atmosphere). A method of manufacturing the laminate is also provided.
摘要翻译：提供一种非粘合型柔性层压体，其包括具有至少一个表面的聚酰亚胺膜进行等离子体处理，形成在等离子体处理表面上的接合层和在接合层上扇形的金属导体层。将等离子体处理的聚酰亚胺膜表面的粘结层厚度（T）与10点平均粗糙度（Rz）的比率（T / Rz）设定为2以上。这提高了初始粘合性，其是非粘合型柔性层压材料（特别是两层柔性层压材料）的粘合强度的指示剂，并且还增加了热老化后的层压体的粘附性（即，在允许之后）在大气中在150℃下放置168小时168小时）。还提供了制造层压板的方法。

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