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1. 发明授权

US09371578B2 Tantalum coil for sputtering and method for processing the coil 有权
标题翻译：用于溅射的钽线圈和用于处理线圈的方法
公开(公告)号：US09371578B2
公开(公告)日：2016-06-21
申请号：US13581843
申请日：2011-03-14
申请人： Shiro Tsukamoto
发明人： Shiro Tsukamoto
IPC分类号： C23C14/34 , C23C14/56 , H01J37/34
CPC分类号： C23C14/564 , C23C14/34 , C23C14/3471 , H01J37/34 , H01J37/3447
摘要： Provided is a tantalum coil for sputtering disposed between a substrate and a sputtering target, wherein the tantalum coil has irregularities so that the surface roughness Rz of the tantalum coil is 150 μm or more and the number of threads is 15 to 30 TPI (Threads per inch) in a transverse direction and 10 to 30 TPI in a vertical direction. An object of the present invention is to take measures to prevent the sputtered grains accumulated on the surface of a tantalum coil from flaking so as to prevent the generation of particles and arcing that is caused by the flaking of the sputtered grains accumulated on the surface of the coil disposed between a substrate and a sputtering target, and the adhesion of the scattered flakes onto the substrate surface; and thereby to provide a technology of improving the quality and productivity of electronic components and stably providing semiconductor elements and devices.
摘要翻译：提供一种设置在基板和溅射靶之间的用于溅射的钽线圈，其中钽线圈具有不规则性，使得钽线圈的表面粗糙度Rz为150μm以上，线数为15〜30TPI（线数英寸），在垂直方向上为10〜30TPI。本发明的目的是采取措施来防止积聚在钽线圈表面上的溅射的颗粒剥落，以防止由堆积在表面上的溅射的颗粒的剥落引起的颗粒和电弧的产生设置在基板和溅射靶之间的线圈以及散射的薄片粘附到基板表面上; 从而提供提高电子元件的质量和生产率并稳定地提供半导体元件和器件的技术。

2. 发明授权

US09328411B2 Ytterbium sputtering target and method of producing said target 有权
标题翻译：镱溅射靶及其制造方法
公开(公告)号：US09328411B2
公开(公告)日：2016-05-03
申请号：US12594492
申请日：2009-02-05
申请人： Shiro Tsukamoto
发明人： Shiro Tsukamoto
IPC分类号： C23C14/34 , C22F1/00 , C22F1/02 , C22F1/16
CPC分类号： C23C14/3414 , C22F1/00 , C22F1/02 , C22F1/16
摘要： Provided is a method of producing an ytterbium sputtering target, wherein an ytterbium target material having Vickers hardness (Hv) of the material surface of 15 or more and 40 or less is prepared in advance, and a surface of the ytterbium target material having the foregoing surface hardness is subject to final finish processing by way of machining. With the ytterbium sputtering target, present invention aims to remarkably reduce the irregularities (gouges) on the target surface after the final finish processing of the target material, and to inhibit the generation of particles during sputtering.
摘要翻译：提供一种制造镱溅射靶的方法，其中预先制备具有15以上且40以下的材料表面的维氏硬度（Hv）的镱靶材，并且具有上述的镱靶材的表面表面硬度通过加工进行最终精加工。利用镱溅射靶，本发明旨在显着地减少目标材料的最终精加工后的目标表面上的不规则（凿孔），并且抑制溅射期间颗粒的产生。

3. 发明申请

US20140027277A1 Titanium Target for Sputtering 有权
标题翻译：钛靶溅射
公开(公告)号：US20140027277A1
公开(公告)日：2014-01-30
申请号：US14009537
申请日：2012-02-03
申请人： Nobuhito Makino , Takeo Okabe , Shiro Tsukamoto
发明人： Nobuhito Makino , Takeo Okabe , Shiro Tsukamoto
IPC分类号： C23C14/14
CPC分类号： H01J37/3426 , C22C14/00 , C22F1/183 , C23C14/3407 , C23C14/3414 , H01J37/3429
摘要： A high-purity titanium target for sputtering, which contains, as additive components, one or more elements selected from Al, Si, S, Cl, Cr, Fe, Ni, As, Zr, Sn, Sb, B, and La in a total amount of 3 to 100 mass ppm, and of which the purity excluding additive components and gas components is 99.99 mass % or higher. An object of this invention is to provide a high-quality titanium target for sputtering, which is free from fractures and cracks during high-power sputtering (high-rate sputtering) and capable of stabilizing the sputtering characteristics.
摘要翻译：一种用于溅射的高纯度钛靶，其包含作为添加成分的一种或多种选自Al，Si，S，Cl，Cr，Fe，Ni，As，Zr，Sn，Sb，B和La中的一种元素总量为3〜100质量ppm，除添加成分和气体成分以外的纯度为99.99质量％以上。本发明的目的是提供一种用于溅射的高质量钛靶，其在高功率溅射（高速溅射）期间没有裂缝和裂纹，并且能够稳定溅射特性。

4. 发明申请

US20130186753A1 Titanium Target for Sputtering 有权
标题翻译：钛靶溅射
公开(公告)号：US20130186753A1
公开(公告)日：2013-07-25
申请号：US13824412
申请日：2011-10-24
申请人： Shiro Tsukamoto , Nobuhito Makino , Hideaki Fukuyo
发明人： Shiro Tsukamoto , Nobuhito Makino , Hideaki Fukuyo
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , C22C1/02 , C22C14/00 , C22F1/183 , C23C14/3414
摘要： Provided is a titanium target for sputtering having a Shore hardness Hs of 20 or more and a basal plane orientation ratio of 70% or less. In the titanium target for sputtering, the purity of titanium is 99.995 mass % or more, excluding gas components. It is an object of the present invention to provide a high-quality titanium target for sputtering, in which impurities are reduced, and which can prevent occurrence of cracking or breaking in high-power sputtering (high-rate sputtering), stabilize sputtering characteristics, and effectively suppress occurrence of particles during formation of a film.
摘要翻译：本发明提供一种肖氏硬度Hs为20以上，基面取向率为70％以下的溅射用钛靶。在用于溅射的钛靶中，钛的纯度为99.995质量％以上，不包括气体成分。本发明的目的是提供一种用于溅射的高质量钛靶，其中杂质减少，并且可以防止在大功率溅射（高速溅射）中发生破裂或断裂，稳定溅射特性，并且有效地抑制了在形成膜期间颗粒的发生。

5. 发明申请

US20100044223A1 Ytterbium Sputtering Target and Method of Producing said Target 有权
标题翻译：镱溅射靶和生产所述靶的方法
公开(公告)号：US20100044223A1
公开(公告)日：2010-02-25
申请号：US12594492
申请日：2009-02-05
申请人： Shiro Tsukamoto
发明人： Shiro Tsukamoto
IPC分类号： C23C14/34 , C21D9/00
CPC分类号： C23C14/3414 , C22F1/00 , C22F1/02 , C22F1/16
摘要： Provided is a method of producing an ytterbium sputtering target, wherein an ytterbium target material having Vickers hardness (Hv) of the material surface of 15 or more and 40 or less is prepared in advance, and a surface of the ytterbium target material having the foregoing surface hardness is subject to final finish processing by way of machining. With the ytterbium sputtering target, present invention aims to remarkably reduce the irregularities (gouges) on the target surface after the final finish processing of the target material, and to inhibit the generation of particles during sputtering.
摘要翻译：提供一种制造镱溅射靶的方法，其中预先制备具有15以上且40以下的材料表面的维氏硬度（Hv）的镱靶材，并且具有上述的镱靶材的表面表面硬度通过加工进行最终精加工。利用镱溅射靶，本发明旨在显着地减少目标材料的最终精加工后的目标表面上的不规则（凿孔），并且抑制溅射期间颗粒的产生。

6. 发明申请

US20090090621A1 Erbium Sputtering Target and Manufacturing Method 审中-公开
标题翻译：铒溅射靶和制造方法
公开(公告)号：US20090090621A1
公开(公告)日：2009-04-09
申请号：US12137856
申请日：2008-06-12
申请人： Shiro Tsukamoto
发明人： Shiro Tsukamoto
IPC分类号： C23C14/34 , C22F1/16
CPC分类号： C22B9/04 , C22B59/00 , C22C1/002 , C22F1/16 , C23C14/3414
摘要： Technology for efficiently and stably providing an erbium sputtering target with low generation of particles during sputtering and capable of achieving favorable uniformity of the sputtered film, as well as a method for manufacturing such an erbium sputtering target is provided. More specifically, an erbium sputtering target is manufactured by forging and heat treatment, wherein the target purity is 3N5 or higher, and the average grain size of crystals observed in the target structure is 1 to 20 mm. The method of manufacturing an erbium sputtering target includes the steps of subjecting a vacuum-cast ingot having a purity of 3N5 or higher to constant temperature forging within a temperature range of 1100 to 1200° C., subsequently subjecting the forged target material to heat treatment at a temperature of 800 to 1200° C., adjusting the target purity to be 3N5 or higher and the average grain size of the target structure to be 1 to 20 mm, and cutting this out to obtain a target.
摘要翻译：提供了用于在溅射期间有效且稳定地提供具有低产生颗粒的铒溅射靶并且能够实现溅射膜的良好均匀性的技术以及制造这种铒溅射靶的方法。更具体地，通过锻造和热处理制造铒溅射靶，其中目标纯度为3N5以上，目标结构中观察到的结晶的平均粒径为1〜20mm。制造铒溅射靶的方法包括以下步骤：在1100〜1200℃的温度范围内对纯度为3N5以上的真空铸造锭进行恒温锻造，然后对锻造的靶材进行热处理在800〜1200℃的温度下，将目标纯度调整为3N5以上，将目标结构的平均粒径调整为1〜20mm，切断，得到目标。

7. 发明授权

US09666418B2 Titanium target for sputtering 有权
公开(公告)号：US09666418B2
公开(公告)日：2017-05-30
申请号：US14353507
申请日：2012-04-27
申请人： Shiro Tsukamoto , Nobuhito Makino , Atsushi Fukushima , Kazuto Yagi , Eiji Hino
发明人： Shiro Tsukamoto , Nobuhito Makino , Atsushi Fukushima , Kazuto Yagi , Eiji Hino
IPC分类号： C23C14/34 , H01J37/34 , C22C14/00 , C22C1/10
CPC分类号： H01J37/3426 , C22C1/10 , C22C14/00 , C23C14/3414
摘要： A high-purity titanium target for sputtering containing 0.5 to 5 mass ppm of S as an additive component, wherein the purity of the target excluding additive components and gas components is 99.995 mass percent or higher. An object of this invention is to provide a high-quality titanium target for sputtering which is free from fractures and cracks during high-power sputtering (high-rate sputtering) and is capable of stabilizing the sputtering characteristics.

8. 发明授权

US09530628B2 Titanium target for sputtering 有权
标题翻译：用于溅射的钛靶
公开(公告)号：US09530628B2
公开(公告)日：2016-12-27
申请号：US14009537
申请日：2012-02-03
申请人： Nobuhito Makino , Takeo Okabe , Shiro Tsukamoto
发明人： Nobuhito Makino , Takeo Okabe , Shiro Tsukamoto
IPC分类号： H01J37/34 , C23C14/34 , C22C14/00 , C22F1/18
CPC分类号： H01J37/3426 , C22C14/00 , C22F1/183 , C23C14/3407 , C23C14/3414 , H01J37/3429
摘要： A high-purity titanium target for sputtering, which contains, as additive components, one or more elements selected from Al, Si, S, Cl, Cr, Fe, Ni, As, Zr, Sn, Sb, B, and La in a total amount of 3 to 100 mass ppm, and of which the purity excluding additive components and gas components is 99.99 mass % or higher. An object of this invention is to provide a high-quality titanium target for sputtering, which is free from fractures and cracks during high-power sputtering (high-rate sputtering) and capable of stabilizing the sputtering characteristics.
摘要翻译：一种用于溅射的高纯度钛靶，其包含作为添加成分的一种或多种选自Al，Si，S，Cl，Cr，Fe，Ni，As，Zr，Sn，Sb，B和La中的一种元素总量为3〜100质量ppm，除添加成分和气体成分以外的纯度为99.99质量％以上。本发明的目的是提供一种用于溅射的高质量钛靶，其在高功率溅射（高速溅射）期间没有裂缝和裂纹，并且能够稳定溅射特性。

9. 发明申请

US20110308940A1 Lanthanum Target for Sputtering 有权
标题翻译：镧靶溅射
公开(公告)号：US20110308940A1
公开(公告)日：2011-12-22
申请号：US13148324
申请日：2010-03-17
申请人： Shiro Tsukamoto , Tomio Otsuki
发明人： Shiro Tsukamoto , Tomio Otsuki
IPC分类号： C23C14/14 , C22C28/00 , C23C14/34
CPC分类号： C23C14/3414 , B21J1/025 , B21J1/04 , C22F1/16 , H01J37/3426
摘要： Provided are a lanthanum target for sputtering which has a recrystallized structure with an average crystal grain size of 100 μm or less and has no spotty macro patterns on the surface; and a method of producing a lanthanum target for sputtering, wherein lanthanum is melted and cast to produce an ingot, the ingot is subject to knead forging at a temperature of 300 to 500° C. and subsequently subject to hot upset forging to form the shape into a rough target shape, and this is additionally subject to machining to obtain a target. This invention aims to offer technology for efficiently and stably providing a lanthanum target for sputtering which has no spotty macro patterns on the surface, and a method of producing the same.
摘要翻译：提供了具有平均晶粒尺寸为100μm以下的再结晶结构的溅射用镧靶，并且在表面上没有斑点的宏观图案; 以及制造用于溅射的镧靶的方法，其中熔融并铸造镧以制造锭，将锭在300至500℃的温度下进行揉搓锻造，随后经受热镦锻以形成形状成为粗略的目标形状，并且另外需要加工以获得目标。本发明的目的在于提供一种用于有效且稳定地提供表面上没有斑点的宏观图案的用于溅射的镧靶的技术及其制造方法。

10. 发明申请

US20110290644A1 Lanthanum Target for Sputtering 有权
标题翻译：镧靶溅射
公开(公告)号：US20110290644A1
公开(公告)日：2011-12-01
申请号：US13147837
申请日：2010-03-17
申请人： Shiro Tsukamoto , Tomio Otsuki
发明人： Shiro Tsukamoto , Tomio Otsuki
IPC分类号： C23C14/14 , B22D21/00 , B22D7/00 , B22D25/02
CPC分类号： C23C14/3414 , B22D21/00 , C22C28/00 , C22F1/16 , C23C14/08
摘要： Provided are a lanthanum target for sputtering which has a Vickers hardness of 60 or more and no spotty macro patterns on the surface, and a method of producing a lanthanum target for sputtering, wherein lanthanum is melted and cast to produce an ingot, the ingot is subject to knead forging at a temperature of 300 to 500° C. and subsequently subject to upset forging at 300 to 500° C. to form the shape into a rough target shape, and this is additionally subject to machining to obtain a target. This invention aims to offer technology for efficiently and stably providing a lanthanum target for sputtering that has no spotty macro patterns on the surface, and a method of producing the same.
摘要翻译：本发明提供一种维氏硬度为60以上的维氏硬度的铼靶，表面上没有斑点的宏观图案，以及制造用于溅射的镧靶的方法，其中将镧熔融并铸造以生产锭，该锭为在300〜500℃的温度下进行揉搓锻造，然后在300〜500℃下进行镦锻，形成粗略的目标形状，另外进行机械加工以获得目标。本发明的目的在于提供一种用于有效且稳定地提供在表面上没有斑点的宏观图案的用于溅射的镧靶的技术及其制造方法。

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