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1. 发明申请

US20060051920A1 Information storage element, manufacturing method thereof, and memory array 失效
标题翻译：信息存储元件，其制造方法和存储器阵列
公开(公告)号：US20060051920A1
公开(公告)日：2006-03-09
申请号：US10535941
申请日：2003-11-28
申请人： Shinya Yamaguchi , Masahiko Ando , Toshikazu Shimada , Natsuki Yokoyama , Shunri Oda , Nobuyoshi Koshida
发明人： Shinya Yamaguchi , Masahiko Ando , Toshikazu Shimada , Natsuki Yokoyama , Shunri Oda , Nobuyoshi Koshida
IPC分类号： H01L21/336
CPC分类号： H01L29/7881 , G11C23/00
摘要： An information memory device capable of reading and writing of information by mechanical operation of a floating gate layer, in which a gate insulation film has a cavity (6), and a floating gate layer (5) having two stable deflection states in the cavity (6), the state stabilized by deflecting toward the channel side of transistor, and the state stabilized by deflecting toward the gate (7) side, writing and reading of information can be made by changing the stable deflection state of the floating gate layer (5) by Coulomb interactive force between the electrons (or positive holes 8) accumulated in the floating gate layer (5) and external electric field, and by reading the channel current change based on the state of the floating gate layer (5).
摘要翻译：一种能够通过机械操作读取和写入信息的信息存储装置，其中栅极绝缘膜具有空腔（6）和在空腔中具有两个稳定偏转状态的浮动栅层（5） 6），通过偏转晶体管的沟道侧稳定状态，并且通过偏向栅极（7）而稳定的状态，可以通过改变浮动栅极层（5）的稳定偏转状态来进行信息的写入和读取）通过积存在浮动栅极层（5）中的电子（或正空穴8）与外部电场之间的库仑相互作用力，并且基于浮动栅极层（5）的状态读取沟道电流变化。

2. 发明授权

US07306990B2 Information storage element, manufacturing method thereof, and memory array 失效
标题翻译：信息存储元件，其制造方法和存储器阵列
公开(公告)号：US07306990B2
公开(公告)日：2007-12-11
申请号：US10535941
申请日：2003-11-28
申请人： Shinya Yamaguchi , Masahiko Ando , Toshikazu Shimada , Natsuki Yokoyama , Shunri Oda , Nobuyoshi Koshida
发明人： Shinya Yamaguchi , Masahiko Ando , Toshikazu Shimada , Natsuki Yokoyama , Shunri Oda , Nobuyoshi Koshida
IPC分类号： H01L21/336 , H01L21/00 , H01L29/788 , H01L21/3205 , H01L21/4763 , H01L29/76
CPC分类号： H01L29/7881 , G11C23/00
摘要： An information memory device capable of reading and writing of information by mechanical operation of a floating gate layer, in which a gate insulation film has a cavity (6), and a floating gate layer (5) having two stable deflection states in the cavity (6), the state stabilized by deflecting toward the channel side of transistor, and the state stabilized by deflecting toward the gate (7) side, writing and reading of information can be made by changing the stable deflection state of the floating gate layer (5) by Coulomb interactive force between the electrons (or positive holes 8) accumulated in the floating gate layer (5) and external electric field, and by reading the channel current change based on the state of the floating gate layer (5).
摘要翻译：一种能够通过机械操作读取和写入信息的信息存储装置，其中栅极绝缘膜具有空腔（6）和在空腔中具有两个稳定偏转状态的浮动栅层（5） 6），通过偏转晶体管的沟道侧稳定状态，并且通过偏向栅极（7）而稳定的状态，可以通过改变浮动栅极层（5）的稳定偏转状态来进行信息的写入和读取）通过积存在浮动栅极层（5）中的电子（或正空穴8）与外部电场之间的库仑相互作用力，并且基于浮动栅极层（5）的状态读取沟道电流变化。

3. 发明授权

US08027776B2 Method for experimenting engine controls parts 有权
标题翻译：发动机控制部件实验方法
公开(公告)号：US08027776B2
公开(公告)日：2011-09-27
申请号：US12314545
申请日：2008-12-12
申请人： Umerujan Sawut , Shinya Yamaguchi , Buso Takigawa
发明人： Umerujan Sawut , Shinya Yamaguchi , Buso Takigawa
IPC分类号： B60T7/12
CPC分类号： F02D41/1406 , F02D41/2429 , F02D41/2464 , F02D2041/1433 , F02D2041/1437 , F02D2200/0402
摘要： Various engine control parts, which are actually attached to the engine and are necessary for engine control, are constructed in a state where electrical transmission and fuel supply are enabled in a manner similar to a case where the engine control parts are mounted on an actual engine, and model-based control is performed using numerical formulas on the same conditions as those of the actual engine on the basis of test data of the actual engine written in an electronic control unit constituting one of the engine control parts.
摘要翻译：实际上附接到发动机并且用于发动机控制所需的各种发动机控制部件被构造成以与发动机控制部件安装在实际发动机上的情况相似的方式实现电力传输和燃料供给的状态并且基于在构成发动机控制部的一个的电子控制单元中的实际发动机的试验数据的基础上，使用与实际发动机相同条件的数学公式进行基于模型的控制。

4. 发明授权

US07981701B2 Semiconductor thin film manufacturing method 有权
标题翻译：半导体薄膜制造方法
公开(公告)号：US07981701B2
公开(公告)日：2011-07-19
申请号：US11030065
申请日：2005-01-07
申请人： Mutsuko Hatano , Shinya Yamaguchi , Mikio Hongo , Akio Yazaki , Takeshi Noda
发明人： Mutsuko Hatano , Shinya Yamaguchi , Mikio Hongo , Akio Yazaki , Takeshi Noda
IPC分类号： H01L21/00
CPC分类号： H01L21/02683 , H01L21/0268 , H01L21/02691 , H01L21/2026 , H01L22/12 , H01L27/1214 , H01L27/1285 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a semiconductor thin film includes a highly sensitive inspection method for detecting lateral crystals and a crystallizing method. In the crystallizing method, the time-based pulse width of a laser SXL is modulated and an approximate band-like crystal silicon film SPSI is formed in a desired region while scanning the substrate SUB1 bidirectionally in the X and −X directions. In the inspection method, an inspection beam PRO1 is irradiated to the substrate just after the laser SXL is turned off. A protrusion TOKI will be formed on the silicon film portion where the laser SXL is turned off if the state of the silicon film is that of a lateral crystal SPSI. The inspection beam PRO1 is scattered by the protrusion TOKI and observed by a detector. If the state of the silicon film is granular crystal GGSI or aggregated film AGSI, such a protrusion TOKI is not observed.
摘要翻译：形成半导体薄膜的方法包括用于检测横向晶体的高灵敏度检测方法和结晶方法。在结晶方法中，激光SXL的基于时间的脉冲宽度被调制，并且在X和-X方向双向扫描衬底SUB1的同时，在所需区域中形成近似带状晶体硅膜SPSI。在检查方法中，在激光SXL关闭之后，将检查光束PRO1照射到基板。如果硅膜的状态是横向晶体SPSI的状态，则在硅膜部分上形成突起TOKI，其中激光SXL截止。检测光束PRO1由突出部TOKI散射并由检测器观测。如果硅膜的状态是粒状晶体GGSI或聚集膜AGSI，则不观察到这样的突起TOKI。

5. 发明申请

US20090115950A1 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US20090115950A1
公开(公告)日：2009-05-07
申请号：US12289671
申请日：2008-10-31
申请人： Yoshiaki Toyota , Shinya Yamaguchi , Kyoko Kojima , Takeshi Ishida
发明人： Yoshiaki Toyota , Shinya Yamaguchi , Kyoko Kojima , Takeshi Ishida
IPC分类号： G02F1/1333 , G02F1/13
CPC分类号： G02F1/136213 , G02F1/133555 , G02F1/136227
摘要： A liquid crystal display device is provided having a transmissive region and a reflective region in a pixel region in which a protective film is formed covering a thin film transistor over a substrate, wherein in the reflective region, an uneven surface is formed on a surface of the protective film, and a capacitor electrode which comprises a transparent conductive film and which is electrically connected to a source electrode of the thin film transistor, a first capacitor insulating film, and a reflective plate which also functions as an opposing electrode and in which the uneven surface formed on the protective film surfaces and appears with the capacitor electrode and the first capacitor insulating film therebetween are formed over the surface of the protective film, a second capacitor insulating film and a pixel electrode are formed covering the reflective region and the transmissive region.
摘要翻译：在液晶显示装置中，在形成有保护膜的像素区域中具有透光区域和反射区域，在衬底上覆盖薄膜晶体管，在反射区域中，在保护膜和电容器电极，其包括透明导电膜，并且电连接到薄膜晶体管的源电极，第一电容器绝缘膜和还用作对置电极的反射板，其中，形成在保护膜表面上的不平坦表面，并且在保护膜的表面上形成有与电容器电极和第一电容器绝缘膜之间出现的不平坦表面，形成覆盖反射区域和透射区域的第二电容器绝缘膜和像素电极。

6. 发明申请

US20080121894A1 METHOD OF MANUFACTURING DISPLAY DEVICE 有权
标题翻译：制造显示装置的方法
公开(公告)号：US20080121894A1
公开(公告)日：2008-05-29
申请号：US12021714
申请日：2008-01-29
申请人： Mikio HONGO , Sachio Uto , Mineo Nomoto , Toshihiko Nakata , Mutsuko Hatano , Shinya Yamaguchi , Makoto Ohkura
发明人： Mikio HONGO , Sachio Uto , Mineo Nomoto , Toshihiko Nakata , Mutsuko Hatano , Shinya Yamaguchi , Makoto Ohkura
IPC分类号： H01L33/00
CPC分类号： H01L29/04 , B23K26/0622 , B23K26/064 , B23K26/0648 , B23K26/066 , B23K26/0665 , B23K26/0732 , H01L21/02422 , H01L21/02532 , H01L21/02678 , H01L21/02683 , H01L21/268 , H01L27/1285 , H01L27/1296 , H01L29/66757 , H01L29/78675
摘要： A TFT device having a pixel portion and a driving circuit portion formed on a glass substrate; wherein at least the active layer (active region) of a transistor constituting said driving circuit comprises polycrystalline silicon including crystals that do not have crystal grain boundaries which cross the direction of current flow.
摘要翻译：一种具有形成在玻璃基板上的像素部分和驱动电路部分的TFT器件; 其中构成所述驱动电路的晶体管的至少有源层（有源区）包括多晶硅，其包括不具有与电流方向交叉的晶界的晶体。

7. 发明申请

US20080111134A1 SEMICONDUCTOR DEVICE, METHOD OF MAKING THE SAME AND LIQUID CRYSTAL DISPLAY DEVICE 审中-公开
标题翻译：半导体器件，其制造方法和液晶显示器件
公开(公告)号：US20080111134A1
公开(公告)日：2008-05-15
申请号：US11969488
申请日：2008-01-04
申请人： Shinya Yamaguchi , Masanobu Miyao , Nobuyuki Sugii , Seang-kee Park , Kiyokazu Nakagawa
发明人： Shinya Yamaguchi , Masanobu Miyao , Nobuyuki Sugii , Seang-kee Park , Kiyokazu Nakagawa
IPC分类号： H01L29/10 , H01L21/00
CPC分类号： H01L29/78696 , G09G3/3648 , G09G2300/0408 , H01L27/1277 , H01L27/1281 , H01L27/1296 , H01L29/04 , H01L29/045 , H01L29/41733 , H01L29/66757 , H01L29/66765 , H01L29/78666 , H01L29/78669 , H01L29/78675 , H01L29/78678
摘要： To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate. A TFT having higher electron mobility can be realized within the predetermined range of characteristic fluctuation by utilizing the semiconductor thin-film (called quasi single crystal thin-film) formed of poly-crystal grain joined with the {111} twin-boundary of Diamond structure as the channel region (namely, active region) of TFT.
摘要翻译：为了提供具有较高电子迁移率的改进的低温多晶层的TFT，并且鉴于通过利用玻璃基板实现具有大的显示面积的液晶显示装置，确保制造中的波动较小。通过利用与金刚石结构的{111}双边界结合的多晶晶粒形成的半导体薄膜（称为准单晶薄膜），可以在特定波动的预定范围内实现具有较高电子迁移率的TFT 作为TFT的沟道区域（即有源区）。

8. 发明授权

US07262821B2 LCD with first and second circuit regions each with separately optimized transistor properties 有权
标题翻译： LCD具有第一和第二电路区域，每个具有单独优化的晶体管特性
公开(公告)号：US07262821B2
公开(公告)日：2007-08-28
申请号：US10772431
申请日：2004-02-06
申请人： Mitsuharu Tai , Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Hideo Sato
发明人： Mitsuharu Tai , Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Hideo Sato
IPC分类号： G02F1/136
CPC分类号： H01L27/1296 , G02F1/13624 , G02F1/136277 , H01L27/1285 , H01L29/04 , H01L29/78621 , H01L29/78627
摘要： A large number of pixels PXL are arranged in a matrix fashion in a display region DSP on an insulating substrate. Disposed around the display region DSP are a drain-side pixel-driving circuit including a drain shift register DSR, a digital-to-analog converter circuit DAC, a drain level shifter DLS, a buffer BF and sampling switches SSW; and a gate-side pixel-driving circuit including a gate shift register GSR and a gate level shifter GLS, and various kinds of circuits. Current mobility of thin film transistors constituting a circuit region SX requiring high-speed operation of these pixel-driving circuits is improved by optimizing a combination of plural layouts, arrangements and configurations for the respective circuits to meet the specifications special for the respective circuits.
摘要翻译：大量像素PXL以矩阵方式排列在绝缘基板上的显示区域DSP中。在显示区域DSP周围设置有漏极侧像素驱动电路，其包括漏极移位寄存器DSR，数模转换器电路DAC，漏极电平移位器DLS，缓冲器BF和采样开关SSW; 以及包括栅极移位寄存器GSR和栅极电平移位器GLS的栅极侧像素驱动电路以及各种电路。构成需要这些像素驱动电路的高速操作的电路区域SX的薄膜晶体管的电流迁移率通过优化各个电路的多个布局，配置和配置的组合来满足各个电路特有的规格而得到改善。

9. 发明申请

US20070118846A1 Optical disc apparatus 失效
标题翻译：光盘装置
公开(公告)号：US20070118846A1
公开(公告)日：2007-05-24
申请号：US11593507
申请日：2006-11-07
申请人： Kazumasa Nasu , Katsunori Onishi , Takayuki Murakami , Katsuo Ichinohe , Yasuhiro Nishina , Shinya Yamaguchi , Nobuyuki Okazaki , Ryuuji Hayashi
发明人： Kazumasa Nasu , Katsunori Onishi , Takayuki Murakami , Katsuo Ichinohe , Yasuhiro Nishina , Shinya Yamaguchi , Nobuyuki Okazaki , Ryuuji Hayashi
IPC分类号： G11B17/03
CPC分类号： G11B17/056
摘要： There are provided a disc tray, a traverse unit, and a main chassis unit. The main chassis unit has a main chassis, which has, as observed when the traverse unit is in a stand-by position, a latch portion that engages with a projection portion of a sub rack and a stopper member that restricts the movement of the cam slider. The stopper member has a rotary shaft in the shape of a circular column, a lever portion which the projection portion makes contact, and a lock portion that makes contact with the cam slider and thereby restricts the sliding movement of the cam slider.
摘要翻译：提供了光盘托盘，横动单元和主机箱单元。主底盘单元具有主底盘，当横移单元处于待机位置时，其具有与副齿条的突出部分接合的闩锁部分和限制凸轮的移动的止动构件滑块止动构件具有圆柱形的旋转轴，突出部接触的杆部和与凸轮滑块接触的锁定部，从而限制凸轮滑块的滑动。

10. 发明授权

US07192852B2 Method for fabricating image display device 有权
公开(公告)号：US07192852B2
公开(公告)日：2007-03-20
申请号：US11172958
申请日：2005-07-05
申请人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
发明人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
IPC分类号： H01L21/20
CPC分类号： H01L21/02683 , G02F1/13454 , H01L21/02532 , H01L21/02609 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04
摘要： There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion of a polysilicon film formed in a drive circuit region DAR1 provided on the periphery of the pixel region PAR of the active matrix substrate SUB1 composing the image display device is irradiated and scanned with a pulse modulated laser beam or a pseudo CW laser beam to be reformed into a quasi-strip-like-crystal silicon film having a crystal boundary continuous in the scanning direction so that discrete reformed regions each composed of the quasi-strip-like-crystal silicon film are formed. In virtual tiles TL composed of the discrete reformed regions, drive circuits having active elements such as thin-film transistors or the like are formed such that the channel directions thereof coincide with the direction of crystal growth in the quasi-strip-like-crystal silicon film.

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