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    • 8. 发明授权
    • High-frequency semiconductor device
    • 高频半导体器件
    • US06861906B2
    • 2005-03-01
    • US10204446
    • 2001-05-11
    • Kazutomi MoriShintaro ShinjoKousei MaemuraTeruyuki ShimuraKazuhiko NakaharaTadashi Takagi
    • Kazutomi MoriShintaro ShinjoKousei MaemuraTeruyuki ShimuraKazuhiko NakaharaTadashi Takagi
    • H01L27/06H03F3/19H03F3/21H03F3/68
    • H01L27/0605H03F3/19H03F3/211H03F2203/21178
    • A high-frequency semiconductor device according to the present invention achieves improvements in degradation of noise characteristics and a reduction in gain, and an improvement in reduction in power efficiency while suppressing a concentration of a current to multifinger HBTs. In the multifinger HBTs constituting a first stage and an output stage of an amplifier 10, basic HBTs 14 that constitute the multifinger HBT 12 corresponding to the first stage, are each made up of an HBT 14a and an emitter resistor 14b connected to the corresponding emitter of the HBT 14a, whereas basic HBTs 18 that constitute the multifinger HBT 16 corresponding to the output stage, are each comprised of an HBT 18a and a base resistor 18c connected to the corresponding base of the HBT 18a. The high-frequency semiconductor device according to the present invention is useful as a high output power amplifier used in satellite communications, ground microwave communications, mobile communications, etc.
    • 根据本发明的高频半导体器件实现了噪声特性的降低和增益的降低的改善,并且在抑制电流到多焦HBT的浓度的同时,提高了功率效率的降低。 在构成放大器10的第一级和输出级的多画面HBT中,构成对应于第一级的多画面HBT 12的基本HBT 14分别由连接到相应发射极的HBT 14a和发射极电阻14b组成 而构成与输出级相对应的多功能HBT16的基本HBT 18分别由连接到HBT 18a的相应基座的HBT 18a和基极电阻18c组成。 根据本发明的高频半导体器件可用作卫星通信,地面微波通信,移动通信等中使用的高输出功率放大器。