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1. 发明授权

US08841047B2 Extreme ultraviolet lithography process and mask 有权
标题翻译：极紫外光刻工艺和面膜
公开(公告)号：US08841047B2
公开(公告)日：2014-09-23
申请号：US13437099
申请日：2012-04-02
申请人： Shinn-Sheng Yu , Yen-Cheng Lu , Anthony Yen
发明人： Shinn-Sheng Yu , Yen-Cheng Lu , Anthony Yen
IPC分类号： G03F1/00
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/48 , G03F1/58 , G03F7/7015 , G03F7/70191
摘要： A process of an extreme ultraviolet lithography (EUVL) is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask with multiple states. Different states of the EUV mask are assigned to adjacent polygons and a field. The EUV mask is exposed by a nearly on-axis illumination (ONI) with partial coherence σ less than 0.3 to produce diffracted lights and non-diffracted lights. Most of the non-diffracted lights are removed. The diffracted lights and the not removed non-diffracted lights are collected and directed to expose a target by a projection optics box.
摘要翻译：公开了一种极紫外光刻（EUVL）的方法。该方法包括接收具有多种状态的极紫外（EUV）掩模。 EUV掩模的不同状态被分配给相邻的多边形和一个场。 EUV掩模由具有部分相干性的几乎轴向照明（ONI）暴露; 小于0.3以产生衍射光和非衍射光。大部分非衍射光被去除。衍射光和未被去除的非衍射光被收集并引导以通过投影光学盒曝光目标。

2. 发明申请

US20140038090A1 Extreme Ultraviolet Lithography Mask and Multilayer Deposition Method for Fabricating Same 有权
标题翻译：极紫外光刻面和多层沉积方法制作相同
公开(公告)号：US20140038090A1
公开(公告)日：2014-02-06
申请号：US13567900
申请日：2012-08-06
申请人： Yen-Cheng Lu , Shinn-Sheng Yu , Anthony Yen
发明人： Yen-Cheng Lu , Shinn-Sheng Yu , Anthony Yen
IPC分类号： G03F1/24 , G03F7/20
CPC分类号： G03F1/24 , G03F1/52
摘要： A mask, method of fabricating same, and method of using same are disclosed. In an example, a mask includes a substrate and a reflective multilayer coating deposited over the substrate. The reflective multilayer coating is formed by positioning the substrate such that an angle α is formed between a normal line of the substrate and particles landing on the substrate and rotating the substrate about an axis that is parallel with a landing direction of the particles. In an example, reflective multilayer coating includes a first layer and a second layer deposited over the first layer. A phase defect region of the reflective multilayer coating includes a first deformation in the first layer at a first location, and a second deformation in the second layer at a second location, the second location laterally displaced from the first location.
摘要翻译：公开了一种掩模，其制造方法及其使用方法。在一个示例中，掩模包括沉积在衬底上的衬底和反射多层涂层。反射多层涂层通过定位基板形成，使得在基板的法线和着陆在基板上的颗粒之间形成角度α，并使基板围绕与颗粒的着陆方向平行的轴线旋转。在一个实例中，反射多层涂层包括沉积在第一层上的第一层和第二层。反射多层涂层的相缺陷区域包括在第一位置处的第一层中的第一变形，以及在第二位置处的第二层中的第二变形，第二位置从第一位置横向移位。

3. 发明授权

US08628897B1 Extreme ultraviolet lithography process and mask 有权
标题翻译：极紫外光刻工艺和面膜
公开(公告)号：US08628897B1
公开(公告)日：2014-01-14
申请号：US13542458
申请日：2012-07-05
申请人： Yen-Cheng Lu , Shinn-Sheng Yu , Anthony Yen
发明人： Yen-Cheng Lu , Shinn-Sheng Yu , Anthony Yen
IPC分类号： G03F1/24 , G03F1/22
CPC分类号： G03F1/24
摘要： A process of an extreme ultraviolet lithography (EUVL) is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask with multiple states. Different states of the EUV mask are assigned to adjacent polygons and adjacent sub-resolution polygons. The EUV mask is exposed by a nearly on-axis illumination (ONI) with partial coherence σ less than 0.3 to produce diffracted lights and non-diffracted lights. Most of the non-diffracted lights are removed. The diffracted lights and the not removed non-diffracted lights are collected and directed to expose a target by a projection optics box.
摘要翻译：公开了一种极紫外光刻（EUVL）的方法。该方法包括接收具有多种状态的极紫外（EUV）掩模。 EUV掩模的不同状态被分配给相邻的多边形和相邻的子分辨率多边形。 EUV掩模由几乎在轴上的照明（ONI）曝光，部分相干sigma小于0.3，产生衍射光和非衍射光。大部分非衍射光被去除。衍射光和未被去除的非衍射光被收集并引导以通过投影光学盒曝光目标。

4. 发明申请

US20140011120A1 EXTREME ULTRAVIOLET LITHOGRAPHY PROCESS AND MASK 有权
标题翻译：极致超紫外线光刻工艺和掩模
公开(公告)号：US20140011120A1
公开(公告)日：2014-01-09
申请号：US13542458
申请日：2012-07-05
申请人： Yen-Cheng Lu , Shinn-Sheng Yu , Anthony Yen
发明人： Yen-Cheng Lu , Shinn-Sheng Yu , Anthony Yen
IPC分类号： G03F1/24 , G03F7/20
CPC分类号： G03F1/24
摘要： A process of an extreme ultraviolet lithography (EUVL) is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask with multiple states. Different states of the EUV mask are assigned to adjacent polygons and adjacent sub-resolution polygons. The EUV mask is exposed by a nearly on-axis illumination (ONI) with partial coherence σ less than 0.3 to produce diffracted lights and non-diffracted lights. Most of the non-diffracted lights are removed. The diffracted lights and the not removed non-diffracted lights are collected and directed to expose a target by a projection optics box.
摘要翻译：公开了一种极紫外光刻（EUVL）的方法。该方法包括接收具有多种状态的极紫外（EUV）掩模。 EUV掩模的不同状态被分配给相邻的多边形和相邻的子分辨率多边形。 EUV掩模由几乎在轴上的照明（ONI）曝光，部分相干sigma小于0.3，产生衍射光和非衍射光。大部分非衍射光被去除。衍射光和未被去除的非衍射光被收集并引导以通过投影光学盒曝光目标。

5. 发明申请

US20130260288A1 EXTREME ULTRAVIOLET LITHOGRAPHY PROCESS AND MASK 有权
标题翻译：极致超紫外线光刻工艺和掩模
公开(公告)号：US20130260288A1
公开(公告)日：2013-10-03
申请号：US13437099
申请日：2012-04-02
申请人： Shinn-Sheng Yu , Yen-Cheng Lu , Anthony Yen
发明人： Shinn-Sheng Yu , Yen-Cheng Lu , Anthony Yen
IPC分类号： G03F1/24 , G03F7/20
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/48 , G03F1/58 , G03F7/7015 , G03F7/70191
摘要： A process of an extreme ultraviolet lithography (EUVL) is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask with multiple states. Different states of the EUV mask are assigned to adjacent polygons and a field. The EUV mask is exposed by a nearly on-axis illumination (ONI) with partial coherence σ less than 0.3 to produce diffracted lights and non-diffracted lights. Most of the non-diffracted lights are removed. The diffracted lights and the not removed non-diffracted lights are collected and directed to expose a target by a projection optics box.
摘要翻译：公开了一种极紫外光刻（EUVL）的方法。该方法包括接收具有多种状态的极紫外（EUV）掩模。 EUV掩模的不同状态被分配给相邻的多边形和一个场。 EUV掩模由几乎在轴上的照明（ONI）曝光，部分相干sigma小于0.3，产生衍射光和非衍射光。大部分非衍射光被去除。衍射光和未被去除的非衍射光被收集并引导以通过投影光学盒曝光目标。

6. 发明申请

US20140038086A1 Phase Shift Mask for Extreme Ultraviolet Lithography and Method of Fabricating Same 有权
标题翻译：用于极紫外光刻的相移掩模及其制造方法
公开(公告)号：US20140038086A1
公开(公告)日：2014-02-06
申请号：US13564198
申请日：2012-08-01
申请人： Chih-Tsung Shih , Pei-Cheng Hsu , Shinn-Sheng Yu , Tsiao-Chen Wu , Yen-Cheng Lu , Shu-Hao Chang , Chia-Jen Chen , Hsin-Chang Lee , Anthony Yen
发明人： Chih-Tsung Shih , Pei-Cheng Hsu , Shinn-Sheng Yu , Tsiao-Chen Wu , Yen-Cheng Lu , Shu-Hao Chang , Chia-Jen Chen , Hsin-Chang Lee , Anthony Yen
IPC分类号： G03F1/24 , G03F7/20
CPC分类号： G03F1/26 , G03F1/24
摘要： A mask and method of fabricating same are disclosed. In an example, a mask includes a substrate, a reflective multilayer coating disposed over the substrate, an Ag2O absorber layer disposed over the reflective multilayer coating, and a tantalum-containing absorber layer disposed over the Ag2O absorber layer. The tantalum-containing absorber layer is disposed over the Ag2O absorber layer outside a mask image region of the mask, such that the mask image region of the mask is free of the tantalum-containing absorber layer. In an example, the tantalum-containing absorber layer is disposed over the Ag2O absorber layer adjacent to the mask image region.
摘要翻译：公开了一种掩模及其制造方法。在一个示例中，掩模包括基板，设置在基板上的反射多层涂层，设置在反射多层涂层上的Ag 2 O吸收层，以及设置在Ag 2 O吸收层上的含钽吸收层。含钽吸收层设置在掩模的掩模图像区域外侧的Ag 2 O吸收体层上，使得掩模的掩模图像区域不含含钽吸收层。在一个实例中，含钽吸收层设置在与掩模图像区域相邻的Ag 2 O吸收层上。

7. 发明授权

US08765330B2 Phase shift mask for extreme ultraviolet lithography and method of fabricating same 有权
标题翻译：用于极紫外光刻的相移掩模及其制造方法
公开(公告)号：US08765330B2
公开(公告)日：2014-07-01
申请号：US13564198
申请日：2012-08-01
申请人： Chia-Tsung Shih , Pei-Chung Hsu , Shinn-Sheng Yu , Tsiao-Chen Wu , Yen-Cheng Lu , Shu-Hao Chang , Chia-Jen Chen , Hsin-Chang Lee , Anthony Yen
发明人： Chia-Tsung Shih , Pei-Chung Hsu , Shinn-Sheng Yu , Tsiao-Chen Wu , Yen-Cheng Lu , Shu-Hao Chang , Chia-Jen Chen , Hsin-Chang Lee , Anthony Yen
IPC分类号： G03F1/24 , G03F1/54
CPC分类号： G03F1/26 , G03F1/24
摘要： A mask and method of fabricating same are disclosed. In an example, a mask includes a substrate, a reflective multilayer coating disposed over the substrate, an Ag2O absorber layer disposed over the reflective multilayer coating, and a tantalum-containing absorber layer disposed over the Ag2O absorber layer. The tantalum-containing absorber layer is disposed over the Ag2O absorber layer outside a mask image region of the mask, such that the mask image region of the mask is free of the tantalum-containing absorber layer. In an example, the tantalum-containing absorber layer is disposed over the Ag2O absorber layer adjacent to the mask image region.
摘要翻译：公开了一种掩模及其制造方法。在一个示例中，掩模包括基板，设置在基板上的反射多层涂层，设置在反射多层涂层上的Ag 2 O吸收层，以及设置在Ag 2 O吸收层上的含钽吸收层。含钽吸收层设置在掩模的掩模图像区域外侧的Ag 2 O吸收体层上，使得掩模的掩模图像区域不含含钽吸收层。在一个实例中，含钽吸收层设置在与掩模图像区域相邻的Ag 2 O吸收层上。

8. 发明授权

US08785084B2 Method for mask fabrication and repair 有权
标题翻译：掩模制造和修理方法
公开(公告)号：US08785084B2
公开(公告)日：2014-07-22
申请号：US13602916
申请日：2012-09-04
申请人： Yen-Cheng Lu , Shinn-Sheng Yu , Anthony Yen
发明人： Yen-Cheng Lu , Shinn-Sheng Yu , Anthony Yen
IPC分类号： G03F1/72 , G03F1/84 , G03F1/24
CPC分类号： G03F1/24 , G03F1/72
摘要： A method for repairing phase defects for an extreme ultraviolet (EUV) mask is disclosed. The method includes receiving a patterned EUV mask with at least one phase-defect region, determining location and size of the phase-defect region, depositing an absorber material to cover the phase-defect region and removing a portion of the patterned absorption layer near the phase-defect region in the patterned EUV mask to form an absorber-absent region.
摘要翻译：公开了用于修复极紫外（EUV）掩模的相缺陷的方法。该方法包括接收具有至少一个相位缺陷区域的图案化EUV掩模，确定相缺陷区域的位置和尺寸，沉积吸收材料以覆盖相缺陷区域并且去除图案化吸收层附近的一部分图案化的EUV掩模中的相缺陷区域以形成不存在吸收体的区域。

9. 发明申请

US20140065521A1 METHOD FOR MASK FABRICATION AND REPAIR 有权
标题翻译：面膜制作和修复方法
公开(公告)号：US20140065521A1
公开(公告)日：2014-03-06
申请号：US13602916
申请日：2012-09-04
申请人： Yen-Cheng Lu , Shinn-Sheng Yu , Anthony Yen
发明人： Yen-Cheng Lu , Shinn-Sheng Yu , Anthony Yen
IPC分类号： G03F1/24
CPC分类号： G03F1/24 , G03F1/72
摘要： A method for repairing phase defects for an extreme ultraviolet (EUV) mask is disclosed. The method includes receiving a patterned EUV mask with at least one phase-defect region, determining location and size of the phase-defect region, depositing an absorber material to cover the phase-defect region and removing a portion of the patterned absorption layer near the phase-defect region in the patterned EUV mask to form an absorber-absent region.
摘要翻译：公开了用于修复极紫外（EUV）掩模的相缺陷的方法。该方法包括接收具有至少一个相位缺陷区域的图案化EUV掩模，确定相缺陷区域的位置和尺寸，沉积吸收材料以覆盖相缺陷区域并且去除图案化吸收层附近的一部分图案化的EUV掩模中的相缺陷区域以形成不存在吸收体的区域。

10. 发明授权

US08828625B2 Extreme ultraviolet lithography mask and multilayer deposition method for fabricating same 有权
标题翻译：极紫外光刻掩模及其制造方法
公开(公告)号：US08828625B2
公开(公告)日：2014-09-09
申请号：US13567900
申请日：2012-08-06
申请人： Yen-Cheng Lu , Shinn-Sheng Yu , Anthony Yen
发明人： Yen-Cheng Lu , Shinn-Sheng Yu , Anthony Yen
IPC分类号： G03F7/16 , G03F1/24
CPC分类号： G03F1/24 , G03F1/52
摘要： A mask, method of fabricating same, and method of using same are disclosed. In an example, a mask includes a substrate and a reflective multilayer coating deposited over the substrate. The reflective multilayer coating is formed by positioning the substrate such that an angle α is formed between a normal line of the substrate and particles landing on the substrate and rotating the substrate about an axis that is parallel with a landing direction of the particles. In an example, reflective multilayer coating includes a first layer and a second layer deposited over the first layer. A phase defect region of the reflective multilayer coating includes a first deformation in the first layer at a first location, and a second deformation in the second layer at a second location, the second location laterally displaced from the first location.
摘要翻译：公开了一种掩模，其制造方法及其使用方法。在一个示例中，掩模包括沉积在衬底上的衬底和反射多层涂层。反射多层涂层通过定位基板而形成，使得在基板的法线和着陆在基板上的颗粒之间形成角度α，并使基板围绕与颗粒的着陆方向平行的轴线旋转。在一个实例中，反射多层涂层包括沉积在第一层上的第一层和第二层。反射多层涂层的相缺陷区域包括在第一位置处的第一层中的第一变形，以及在第二位置处的第二层中的第二变形，第二位置从第一位置横向移位。

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