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1. 发明授权

US08765330B2 Phase shift mask for extreme ultraviolet lithography and method of fabricating same 有权
标题翻译：用于极紫外光刻的相移掩模及其制造方法
公开(公告)号：US08765330B2
公开(公告)日：2014-07-01
申请号：US13564198
申请日：2012-08-01
申请人： Chia-Tsung Shih , Pei-Chung Hsu , Shinn-Sheng Yu , Tsiao-Chen Wu , Yen-Cheng Lu , Shu-Hao Chang , Chia-Jen Chen , Hsin-Chang Lee , Anthony Yen
发明人： Chia-Tsung Shih , Pei-Chung Hsu , Shinn-Sheng Yu , Tsiao-Chen Wu , Yen-Cheng Lu , Shu-Hao Chang , Chia-Jen Chen , Hsin-Chang Lee , Anthony Yen
IPC分类号： G03F1/24 , G03F1/54
CPC分类号： G03F1/26 , G03F1/24
摘要： A mask and method of fabricating same are disclosed. In an example, a mask includes a substrate, a reflective multilayer coating disposed over the substrate, an Ag2O absorber layer disposed over the reflective multilayer coating, and a tantalum-containing absorber layer disposed over the Ag2O absorber layer. The tantalum-containing absorber layer is disposed over the Ag2O absorber layer outside a mask image region of the mask, such that the mask image region of the mask is free of the tantalum-containing absorber layer. In an example, the tantalum-containing absorber layer is disposed over the Ag2O absorber layer adjacent to the mask image region.
摘要翻译：公开了一种掩模及其制造方法。在一个示例中，掩模包括基板，设置在基板上的反射多层涂层，设置在反射多层涂层上的Ag 2 O吸收层，以及设置在Ag 2 O吸收层上的含钽吸收层。含钽吸收层设置在掩模的掩模图像区域外侧的Ag 2 O吸收体层上，使得掩模的掩模图像区域不含含钽吸收层。在一个实例中，含钽吸收层设置在与掩模图像区域相邻的Ag 2 O吸收层上。

2. 发明申请

US20140038086A1 Phase Shift Mask for Extreme Ultraviolet Lithography and Method of Fabricating Same 有权
标题翻译：用于极紫外光刻的相移掩模及其制造方法
公开(公告)号：US20140038086A1
公开(公告)日：2014-02-06
申请号：US13564198
申请日：2012-08-01
申请人： Chih-Tsung Shih , Pei-Cheng Hsu , Shinn-Sheng Yu , Tsiao-Chen Wu , Yen-Cheng Lu , Shu-Hao Chang , Chia-Jen Chen , Hsin-Chang Lee , Anthony Yen
发明人： Chih-Tsung Shih , Pei-Cheng Hsu , Shinn-Sheng Yu , Tsiao-Chen Wu , Yen-Cheng Lu , Shu-Hao Chang , Chia-Jen Chen , Hsin-Chang Lee , Anthony Yen
IPC分类号： G03F1/24 , G03F7/20
CPC分类号： G03F1/26 , G03F1/24
摘要： A mask and method of fabricating same are disclosed. In an example, a mask includes a substrate, a reflective multilayer coating disposed over the substrate, an Ag2O absorber layer disposed over the reflective multilayer coating, and a tantalum-containing absorber layer disposed over the Ag2O absorber layer. The tantalum-containing absorber layer is disposed over the Ag2O absorber layer outside a mask image region of the mask, such that the mask image region of the mask is free of the tantalum-containing absorber layer. In an example, the tantalum-containing absorber layer is disposed over the Ag2O absorber layer adjacent to the mask image region.
摘要翻译：公开了一种掩模及其制造方法。在一个示例中，掩模包括基板，设置在基板上的反射多层涂层，设置在反射多层涂层上的Ag 2 O吸收层，以及设置在Ag 2 O吸收层上的含钽吸收层。含钽吸收层设置在掩模的掩模图像区域外侧的Ag 2 O吸收体层上，使得掩模的掩模图像区域不含含钽吸收层。在一个实例中，含钽吸收层设置在与掩模图像区域相邻的Ag 2 O吸收层上。

3. 发明授权

US08877409B2 Reflective mask and method of making same 有权
标题翻译：反光罩及其制作方法
公开(公告)号：US08877409B2
公开(公告)日：2014-11-04
申请号：US13451705
申请日：2012-04-20
申请人： Pei-Cheng Hsu , Chih-Tsung Shih , Chia-Jen Chen , Tsiao-Chen Wu , Shinn-Sheng Yu , Hsin-Chang Lee , Anthony Yen
发明人： Pei-Cheng Hsu , Chih-Tsung Shih , Chia-Jen Chen , Tsiao-Chen Wu , Shinn-Sheng Yu , Hsin-Chang Lee , Anthony Yen
IPC分类号： G03F1/24
CPC分类号： G03F1/24 , G03F1/48 , H01L21/0337
摘要： A reflective mask is described. The mask includes a low thermal expansion material (LTEM) substrate, a conductive layer deposited on a first surface of the LTEM substrate, a stack of reflective multilayers (ML) deposited on a second surface of the LTEM substrate, a capping layer deposited on the stack of reflective ML, a first absorption layer deposited on the first capping layer, a main pattern, and a border ditch. The border ditch reaches to the capping layer, a second absorption layer deposited inside the border ditch, and the second absorption layer contacts the capping layer. In some instances, the border ditch crosses the capping layer and partially enters the reflective multilayer.
摘要翻译：描述了一种反光罩。掩模包括低热膨胀材料（LTEM）衬底，沉积在LTEM衬底的第一表面上的导电层，沉积在LTEM衬底的第二表面上的反射多层堆叠（ML），沉积在堆叠的反射ML，沉积在第一盖层上的第一吸收层，主图案和边界沟。边界沟到达覆盖层，沉积在边界沟内的第二吸收层，第二吸收层接触覆盖层。在一些情况下，边界沟穿过覆盖层并部分地进入反射层。

4. 发明申请

US20130280643A1 REFLECTIVE MASK AND METHOD OF MAKING SAME 有权
标题翻译：反射掩模及其制作方法
公开(公告)号：US20130280643A1
公开(公告)日：2013-10-24
申请号：US13451705
申请日：2012-04-20
申请人： Pei-Cheng Hsu , Chih-Tsung Shih , Chia-Jen Chen , Tsiao-Chen Wu , Shinn-Sheng Yu , Hsin-Chang Lee , Anthony Yen
发明人： Pei-Cheng Hsu , Chih-Tsung Shih , Chia-Jen Chen , Tsiao-Chen Wu , Shinn-Sheng Yu , Hsin-Chang Lee , Anthony Yen
IPC分类号： G03F1/24
CPC分类号： G03F1/24 , G03F1/48 , H01L21/0337
摘要： A reflective mask is described. The mask includes a low thermal expansion material (LTEM) substrate, a conductive layer deposited on a first surface of the LTEM substrate, a stack of reflective multilayers (ML) deposited on a second surface of the LTEM substrate, a capping layer deposited on the stack of reflective ML, a first absorption layer deposited on the first capping layer, a main pattern, and a border ditch. The border ditch reaches to the capping layer, the second absorption layer deposited inside the border ditch, and the second absorption layer contacts the capping layer.
摘要翻译：描述了一种反光罩。掩模包括低热膨胀材料（LTEM）衬底，沉积在LTEM衬底的第一表面上的导电层，沉积在LTEM衬底的第二表面上的反射多层堆叠（ML），沉积在堆叠的反射ML，沉积在第一盖层上的第一吸收层，主图案和边界沟。边界沟到达覆盖层，第二吸收层沉积在边界沟内，第二吸收层接触封盖层。

5. 发明申请

US20100053575A1 Thermal Control For EUV Lithography 审中-公开
标题翻译： EUV光刻热控制
公开(公告)号：US20100053575A1
公开(公告)日：2010-03-04
申请号：US12204527
申请日：2008-09-04
申请人： I-Hsiung Huang , Tsiao-Chen Wu , Hsin-Chang Lee , Anthony Yen
发明人： I-Hsiung Huang , Tsiao-Chen Wu , Hsin-Chang Lee , Anthony Yen
IPC分类号： G03B27/52
CPC分类号： G03B27/52 , G03F7/70875
摘要： A method of patterning an integrated circuit including generating a thermal profile of a reticle is provided. The thermal profile of the reticle may illustrate heat accumulation (e.g., a temperature) in a EUV reticle due an incident EUV radiation beam. The thermal profile may be determined using the pattern density of the reticle. The reticle is irradiated with a radiation beam having an extreme ultraviolet (EUV) wavelength. A thermal control profile may be generated using the thermal profile, which may define a parameter of the lithography process such as, a temperature gradient of a thermal control chuck. The thermal control profile may be downloaded to the EUV lithography tool (e.g., scanner or stepper) for use in a process. A separate thermal control profile may be provided for different reticles.
摘要翻译：提供一种图案化集成电路的方法，包括生成掩模版的热分布图。掩模版的热分布可以说明由于入射的EUV辐射束而导致的EUV掩模版中的热积聚（例如，温度）。可以使用掩模版的图案密度来确定热分布。用具有极紫外（EUV）波长的辐射束照射掩模版。可以使用热分布来产生热控制曲线，其可以限定光刻工艺的参数，例如热控制卡盘的温度梯度。可以将热控制简档下载到EUV光刻工具（例如扫描器或步进器）以用于一个过程。可以为不同的掩模版提供单独的热控制轮廓。

6. 发明授权

US08679707B2 Method of fabricating a lithography mask 有权
标题翻译：光刻掩模的制造方法
公开(公告)号：US08679707B2
公开(公告)日：2014-03-25
申请号：US13564334
申请日：2012-08-01
申请人： Hsin-Chang Lee , Yun-Yue Lin , Pei-Cheng Hsu , Chia-Jen Chen , Ta-Cheng Lien , Anthony Yen
发明人： Hsin-Chang Lee , Yun-Yue Lin , Pei-Cheng Hsu , Chia-Jen Chen , Ta-Cheng Lien , Anthony Yen
IPC分类号： G03F1/24 , G03F1/22
CPC分类号： G03F1/22 , G03F1/80
摘要： A method of fabricating an extreme ultraviolet (EUV) mask is disclosed. The method includes providing a substrate, forming a reflective multilayer (ML) over the substrate, forming a buffer layer over the reflective ML, forming an absorption layer over the buffer layer and forming a capping layer over the absorption layer. The capping layer and the absorption layer are etched to form the EUV mask.
摘要翻译：公开了一种制造极紫外（EUV）掩模的方法。该方法包括提供衬底，在衬底上形成反射多层（ML），在反射ML上形成缓冲层，在缓冲层上形成吸收层，并在吸收层上形成覆盖层。蚀刻覆盖层和吸收层以形成EUV掩模。

7. 发明申请

US20130298088A1 System and Method for Combined Intraoverlay and Defect Inspection 有权
标题翻译：组合内部和缺陷检查的系统和方法
公开(公告)号：US20130298088A1
公开(公告)日：2013-11-07
申请号：US13464116
申请日：2012-05-04
申请人： Hsin-Chang Lee , Chia-Jen Chen , Yeh Lee-Chih , Sheng-Chi Chin , Ting-Hao Hsu , Anthony Yen
发明人： Hsin-Chang Lee , Chia-Jen Chen , Yeh Lee-Chih , Sheng-Chi Chin , Ting-Hao Hsu , Anthony Yen
IPC分类号： G06F17/50
CPC分类号： G03F1/84 , G03F1/72
摘要： A method and system for measuring layer overlay and for inspecting a mask for defects unrelated to overlay utilizing a singe comprehensive tool is disclosed. An exemplary method includes receiving a mask design database that corresponds to a mask and has a die area with a mask database feature. A mask image of the mask is received, and a comprehensive inspection system compares the mask image to the mask design database in order to detect mask defects that are not related to layer alignment. The system produces mask defect information corresponding to the mask defects. The comprehensive inspection system also compares the mask image to the mask design database to determine a database-to-mask offset. From the database-to-mask offset, a mask overlay characteristic is determined.
摘要翻译：公开了一种用于测量层叠覆盖层的方法和系统，并且用于使用单个综合工具来检查与覆盖无关的缺陷的掩模。一种示例性方法包括接收对应于掩模并且具有掩模数据库特征的管芯区域的掩模设计数据库。接收掩模的掩模图像，并且综合检查系统将掩模图像与掩模设计数据库进行比较，以便检测与层对齐无关的掩模缺陷。系统产生对应于掩模缺陷的掩模缺陷信息。综合检查系统还将掩模图像与掩模设计数据库进行比较，以确定数据库对掩模偏移量。从数据库到掩码偏移，确定掩模覆盖特性。

8. 发明授权

US08709682B2 Mask and method for forming the mask 有权
标题翻译：用于形成掩模的掩模和方法
公开(公告)号：US08709682B2
公开(公告)日：2014-04-29
申请号：US13369061
申请日：2012-02-08
申请人： Chia-Jen Chen , Anthony Yen , Hsin-Chang Lee , Sheng-Chi Chin
发明人： Chia-Jen Chen , Anthony Yen , Hsin-Chang Lee , Sheng-Chi Chin
IPC分类号： G03F1/26
CPC分类号： G03F1/42 , G03F1/50 , G03F1/84
摘要： Provided is a method for reducing phase defects on many different types of semiconductor mask blanks. The method includes receiving a semiconductor mask blank substrate, creating alignment marks on the surface of the substrate, performing an inspection of the surface of the substrate to locate a plurality of surface defects, and repairing the plurality of surface defects on the surface of the substrate. A semiconductor mask is also provided that includes a repaired substrate a multilayer stack comprising a plurality of molybdenum and silicon layers, a capping layer, an absorber layer, and in some instances a photoresist layer.
摘要翻译：提供了一种用于减少许多不同类型的半导体掩模坯料上的相缺陷的方法。该方法包括：接收半导体掩模空白基板，在基板的表面上产生对准标记，对基板的表面进行检查以定位多个表面缺陷，以及修复基板表面上的多个表面缺陷。还提供了一种半导体掩模，其包括修复的衬底，包括多个钼和硅层的多层叠层，覆盖层，吸收层，并且在一些情况下为光致抗蚀剂层。

9. 发明申请

US20140038088A1 Method of Fabricating a Lithography Mask 有权
标题翻译：制作光刻面膜的方法
公开(公告)号：US20140038088A1
公开(公告)日：2014-02-06
申请号：US13564334
申请日：2012-08-01
申请人： Hsin-Chang Lee , Yun-Yue Lin , Pei-Cheng Hsu , Chia-Jen Chen , Ta-Cheng Lien , Anthony Yen
发明人： Hsin-Chang Lee , Yun-Yue Lin , Pei-Cheng Hsu , Chia-Jen Chen , Ta-Cheng Lien , Anthony Yen
IPC分类号： G03F1/24
CPC分类号： G03F1/22 , G03F1/80
摘要： A method of fabricating an extreme ultraviolet (EUV) mask is disclosed. The method includes providing a substrate, forming a reflective multilayer (ML) over the substrate, forming a buffer layer over the reflective ML, forming an absorption layer over the buffer layer and forming a capping layer over the absorption layer. The capping layer and the absorption layer are etched to form the EUV mask.
摘要翻译：公开了一种制造极紫外（EUV）掩模的方法。该方法包括提供衬底，在衬底上形成反射多层（ML），在反射ML上形成缓冲层，在缓冲层上形成吸收层，并在吸收层上形成覆盖层。蚀刻覆盖层和吸收层以形成EUV掩模。

10. 发明申请

US20130280644A1 MASK AND METHOD FOR FORMING THE SAME 有权
公开(公告)号：US20130280644A1
公开(公告)日：2013-10-24
申请号：US13451767
申请日：2012-04-20
申请人： Yun-Yue Lin , Ta-Cheng Lien , Hsin-Chang Lee , Anthony Yen , Chia-Jen Chen
发明人： Yun-Yue Lin , Ta-Cheng Lien , Hsin-Chang Lee , Anthony Yen , Chia-Jen Chen
IPC分类号： G03F1/48 , G03F1/26 , G03F1/30 , G03F1/22
CPC分类号： G03F1/48 , G03F1/22 , G03F1/26 , G03F1/30 , G03F1/32 , G03F1/50
摘要： A photomask includes a low thermal expansion material (LTEM) substrate, a patterned opaque layer over the LTEM substrate, and a patterned capping layer over the opaque layer. The patterned capping layer includes a transition metal material for suppressing haze growth, such as metal oxide, metal nitride, or metal oxynitride. The material in the capping layer reacts with a hydrogenic compound from a lithography environment to for an atomic level hydrogen passivation layer. The passivation layer has superior ability to suppress photo-induced haze defect growth on the photomask surface, to improve production cycle time and reduce the production cost.

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