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1. 发明申请

US20140048823A1 SEMICONDUCTOR STACKED BODY, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR ELEMENT 有权
标题翻译：半导体堆叠体，制造方法及半导体元件
公开(公告)号：US20140048823A1
公开(公告)日：2014-02-20
申请号：US14110417
申请日：2012-04-03
申请人： Shinkuro Sato , Akito Kuramata , Yoshikatsu Morishima , Kazuyuki Iizuka
发明人： Shinkuro Sato , Akito Kuramata , Yoshikatsu Morishima , Kazuyuki Iizuka
IPC分类号： H01L29/20
CPC分类号： H01L29/2003 , C23C16/0218 , C23C16/0227 , C23C16/0272 , C23C16/303 , C30B25/183 , C30B29/403 , H01L21/02414 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L29/267 , H01L29/7371 , H01L29/7788 , H01L29/7789 , H01L29/7827 , H01L29/8122 , H01L29/8128 , H01L29/872 , H01L33/007 , H01L33/12 , H01L33/32
摘要： A method for manufacturing a semiconductor stacked body, and a semiconductor element including the semiconductor stacked body includes a semiconductor stacked body, including a Ga203 substrate having, as a principal plane, a plane on which oxygen atoms are arranged in a hexagonal lattice, an AIN buffer layer formed on the Ga203 substrate, and a nitride semiconductor layer formed on the AIN buffer layer.
摘要翻译：一种半导体层叠体的制造方法以及具备该半导体层叠体的半导体元件，具备：半导体层叠体，具有Ga 2 O 3基板，具有作为主面的以六方晶格排列有氧原子的平面，AlN 形成在Ga 2 O 3衬底上的缓冲层，以及形成在AIN缓冲层上的氮化物半导体层。

2. 发明授权

US09153648B2 Semiconductor stacked body, method for manufacturing same, and semiconductor element 有权
标题翻译：半导体堆叠体及其制造方法以及半导体元件
公开(公告)号：US09153648B2
公开(公告)日：2015-10-06
申请号：US14110417
申请日：2012-04-03
申请人： Shinkuro Sato , Akito Kuramata , Yoshikatsu Morishima , Kazuyuki Iizuka
发明人： Shinkuro Sato , Akito Kuramata , Yoshikatsu Morishima , Kazuyuki Iizuka
IPC分类号： H01L29/20 , H01L29/267 , H01L29/737 , H01L29/778 , H01L29/78 , H01L29/812 , H01L29/872 , C23C16/02 , C23C16/30 , H01L21/02 , C30B25/18 , C30B29/40 , H01L33/00 , H01L33/12 , H01L33/32
CPC分类号： H01L29/2003 , C23C16/0218 , C23C16/0227 , C23C16/0272 , C23C16/303 , C30B25/183 , C30B29/403 , H01L21/02414 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L29/267 , H01L29/7371 , H01L29/7788 , H01L29/7789 , H01L29/7827 , H01L29/8122 , H01L29/8128 , H01L29/872 , H01L33/007 , H01L33/12 , H01L33/32
摘要： A method for manufacturing a semiconductor stacked body, and a semiconductor element including the semiconductor stacked body includes a semiconductor stacked body, including a Ga2O3 substrate having, as a principal plane, a plane on which oxygen atoms are arranged in a hexagonal lattice, an AlN buffer layer formed on the Ga2O3 substrate, and a nitride semiconductor layer formed on the AlN buffer layer.
摘要翻译：一种半导体层叠体的制造方法以及具备该半导体层叠体的半导体元件，具备：半导体层叠体，具有以二氧化硅基板为主面的半导体层叠体，所述Ga 2 O 3基板以六方晶格排列有氧原子的面为主面，形成在Ga 2 O 3衬底上的缓冲层，以及形成在AlN缓冲层上的氮化物半导体层。

3. 发明申请

US20140027770A1 SEMICONDUCTOR LAMINATE AND PROCESS FOR PRODUCTION THEREOF, AND SEMICONDUCTOR ELEMENT 审中-公开
标题翻译：半导体层压板及其制造方法及半导体元件
公开(公告)号：US20140027770A1
公开(公告)日：2014-01-30
申请号：US14110420
申请日：2012-04-03
申请人： Kazuyuki Iizuka , Yoshikatsu Morishima , Shinkuro Sato
发明人： Kazuyuki Iizuka , Yoshikatsu Morishima , Shinkuro Sato
IPC分类号： H01L29/267
CPC分类号： H01L29/267 , C23C16/0272 , C23C16/303 , C30B25/183 , C30B29/403 , H01L21/02414 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L29/2003 , H01L29/66212 , H01L29/66318 , H01L29/66462 , H01L29/872 , H01L33/007 , H01L33/12
摘要： A semiconductor laminate having small electric resistivity in the thickness direction; a process for producing the semiconductor laminate; and a semiconductor element equipped with the semiconductor laminate. include a semiconductor laminate including a Ga203 substrate; an AlGalnN buffer layer which is formed on the Ga203 substrate; a nitride semiconductor layer which is formed on the AlGalnN buffer layer and contains Si; and an Si-rich region which is formed in an area located on the AlGalnN buffer layer side in the nitride semiconductor layer and has an Si concentration of 5×1018/cm3 or more.
摘要翻译：厚度方向电阻率小的半导体层叠体; 制造半导体层叠体的方法; 以及配备有半导体层叠体的半导体元件。包括包含Ga 2 O 3衬底的半导体层叠体; 形成在Ga 2 O 3衬底上的AlGalnN缓冲层; 形成在AlGalnN缓冲层上并含有Si的氮化物半导体层; 以及形成在位于氮化物半导体层中的AlGalnN缓冲层侧的区域中的Si浓度为5×1018 / cm3以上的Si浓度区域。

4. 发明申请

US20100301362A1 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US20100301362A1
公开(公告)日：2010-12-02
申请号：US12662645
申请日：2010-04-27
申请人： Kazuyuki Iizuka , Masahiro Watanabe
发明人： Kazuyuki Iizuka , Masahiro Watanabe
IPC分类号： H01L33/46
CPC分类号： H01L33/387 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L33/42
摘要： A semiconductor light emitting element includes a group III-V compound semiconductor layer, a first main surface and a second main surface, a reflection metal film formed on the second main surface, a front surface electrode formed on the first main surface, and an ohmic contact joint part formed between the reflection metal film and the group III-V compound semiconductor layer except a region directly under the front surface electrode. The ohmic contact joint part is disposed in a side of an outer peripheral part of the semiconductor light emitting element, formed so as to surround the front surface electrode when the ohmic contact joint part is viewed from a side of the front surface electrode, and disposed so that distance from each location of outer edge parts of the front surface electrode to the ohmic contact joint part nearest to the each location becomes equal to each other.
摘要翻译：半导体发光元件包括III-V族化合物半导体层，第一主表面和第二主表面，形成在第二主表面上的反射金属膜，形成在第一主表面上的前表面电极和欧姆接触部分形成在反射金属膜和III-V族化合物半导体层之外，除了正面电极正下方的区域。欧姆接触部分设置在半导体发光元件的外周部分的一侧，当从前表面电极的一侧观察欧姆接触部分时，形成为围绕前表面电极，并且设置使得从前表面电极的外边缘部分的每个位置到最接近每个位置的欧姆接触部分的距离彼此相等。

5. 发明授权

US07569866B2 Semiconductor light-emitting device 失效
标题翻译：半导体发光装置
公开(公告)号：US07569866B2
公开(公告)日：2009-08-04
申请号：US11497379
申请日：2006-08-02
申请人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai
发明人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/30
摘要： A semiconductor light-emitting device having: a light-emitting portion formed on a semiconductor substrate, the light-emitting portion having an n-type clad layer, an active layer and a p-type clad layer; an As-based contact layer formed on the light-emitting portion, the contact layer being doped with a p-type dopant of 1×1019/cm3 or more; a current spreading layer formed on the contact layer, the current spreading layer being formed of a transparent conductive film of a metal oxide material; and a buffer layer formed between the contact layer and the p-type clad layer or formed being inserted inside of the p-type clad layer. The buffer layer is of an undoped group III/V semiconductor, and the group III/V semiconductor is of a group V element having P (phosphorus) as a main component thereof.
摘要翻译：一种半导体发光器件，具有：形成在半导体衬底上的发光部分，所述发光部分具有n型覆盖层，有源层和p型覆盖层; 形成在发光部分上的As基接触层，所述接触层掺杂有1×1019 / cm3以上的p型掺杂剂; 形成在所述接触层上的电流扩展层，所述电流扩散层由金属氧化物材料的透明导电膜形成; 以及形成在所述接触层和所述p型覆盖层之间或形成为插入所述p型覆盖层内部的缓冲层。缓冲层为未掺杂的III / V族III族半导体，III / V族半导体为具有P（磷）作为主要成分的V族元素。

6. 发明授权

US07449722B2 Semiconductor light emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：US07449722B2
公开(公告)日：2008-11-11
申请号：US11285388
申请日：2005-11-23
申请人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai , Takashi Furuya
发明人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai , Takashi Furuya
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/02 , H01L33/04 , H01L33/32
摘要： A semiconductor light emitting element has a first conductive-type cladding layer, an undoped active layer, a second conductive-type cladding layer, and a second conductive-type current spreading layer that are formed on a first conductive-type semiconductor substrate. The second conductive-type cladding layer has a first dopant suppressing layer formed at a portion in the second conductive-type cladding layer, the portion being not in contact with the active layer. The first dopant suppressing layer has a dopant concentration lower than a region in the vicinity of the first dopant suppressing layer.
摘要翻译：半导体发光元件具有形成在第一导电型半导体基板上的第一导电型包覆层，未掺杂的有源层，第二导电型覆盖层和第二导电型电流扩展层。第二导电型包覆层具有形成在第二导电型包覆层的一部分上的第一掺杂剂抑制层，该部分不与有源层接触。第一掺杂剂抑制层的掺杂剂浓度低于第一掺杂剂抑制层附近的区域。

7. 发明申请

US20060220032A1 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US20060220032A1
公开(公告)日：2006-10-05
申请号：US11165568
申请日：2005-06-24
申请人： Masahiro Arai , Taichiroo Konno , Kazuyuki Iizuka
发明人： Masahiro Arai , Taichiroo Konno , Kazuyuki Iizuka
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/14 , H01L33/30
摘要： A semiconductor light emitting device has: a semiconductor substrate; a semiconductor layer having an n-type cladding layer, an active layer, a p-type cladding layer and a p-type contact layer, wherein the p-type contact layer is made of an As-based material and located at the top of the semiconductor layer and doped with a p-type dopant at a concentration of 1×1019/cm3 or more; a current spreading layer formed on the semiconductor layer and made of a metal oxide material; and a diffusion prevention layer formed between the p-type contact layer and the p-type cladding layer. The diffusion prevention layer is made of a group III-V semiconductor that has phosphorus as a group V element and has a crystal lattice mismatch ratio of within ±0.3% to the semiconductor substrate.
摘要翻译：半导体发光器件具有：半导体衬底; 具有n型包覆层，有源层，p型覆层和p型接触层的半导体层，其中p型接触层由基于As的材料制成，位于半导体层并掺杂浓度为1×10 9 / cm 3以上的p型掺杂剂; 形成在半导体层上并由金属氧化物材料制成的电流扩展层; 以及形成在p型接触层和p型覆层之间的扩散防止层。扩散防止层由具有磷作为V族元素并且具有与半导体衬底的±0.3％以内的晶格失配比的III-V族半导体制成。

8. 发明申请

US20050042789A1 Method for producing nitride semiconductor, semiconductor wafer and semiconductor device 有权
标题翻译：氮化物半导体，半导体晶片和半导体器件的制造方法
公开(公告)号：US20050042789A1
公开(公告)日：2005-02-24
申请号：US10875101
申请日：2004-06-24
申请人： Hajime Fujikura , Kazuyuki Iizuka
发明人： Hajime Fujikura , Kazuyuki Iizuka
IPC分类号： C30B25/02 , C30B25/18 , C30B29/40 , H01L21/205 , H01L33/16 , H01L33/32 , H01L21/00
CPC分类号： H01L21/02458 , C30B25/02 , C30B25/18 , C30B29/40 , H01L21/0237 , H01L21/0242 , H01L21/0245 , H01L21/0254 , H01L21/02587 , H01L21/0262 , H01L21/02645 , H01L21/02647 , H01L21/02661
摘要： A method for producing a nitride semiconductor comprising growing at least first to third nitride semiconductor layers on a substrate; said first nitride semiconductor layer being grown at 400-600° C.; and said second and third nitride semiconductor layers being grown on said first nitride semiconductor layer at 700-1,300° C. after heat-treating said first nitride semiconductor layer at 700-1,300° C.; used as a carrier gas supplied near said substrate together with a starting material gas being a hydrogen/nitrogen mixture gas containing 63% or more by volume of hydrogen during growing said second nitride semiconductor layer, and a hydrogen/nitrogen mixture gas containing 50% or more by volume of nitrogen during growing said third nitride semiconductor layer; and said second nitride semiconductor layer being formed to a thickness of more than 1 μm.
摘要翻译：一种生产氮化物半导体的方法，包括在衬底上生长至少第一至第三氮化物半导体层; 所述第一氮化物半导体层在400-600℃下生长。并且所述第二和第三氮化物半导体层在700-1,300℃热处理所述第一氮化物半导体层之后在700-1300℃下在所述第一氮化物半导体层上生长。在生长所述第二氮化物半导体层期间用作在所述衬底附近供应的载气和起始原料气体，所述原料气体是含有63体积％或更多体积氢气的氢/氮混合气体，以及含有50％或在生长所述第三氮化物半导体层期间更多的氮的体积; 并且所述第二氮化物半导体层形成为大于1μm的厚度。

9. 发明授权

US08071992B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US08071992B2
公开(公告)日：2011-12-06
申请号：US12230234
申请日：2008-08-26
申请人： Nobuaki Kitano , Masahiro Arai , Kazuyuki Iizuka
发明人： Nobuaki Kitano , Masahiro Arai , Kazuyuki Iizuka
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/387 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light-emitting device includes a support structure, and a light-emitting structure. The support structure includes a support substrate, and a support substrate side bonding layer disposed on one surface of the support substrate. The light-emitting structure includes a light-emitting structure side bonding layer bonded to the support substrate side bonding layer, a reflection region disposed on the support substrate side bonding layer opposite the support substrate, and a semiconductor multilayer structure including a light-emitting layer disposed on the reflection region opposite the light-emitting structure side bonding layer for emitting a light with a predetermined wavelength, and a light-extraction surface disposed on the light-emitting layer opposite the reflection region for reflecting diffusely the light. The reflection region includes a transparent layer of a material with a lower refractive index than that of the semiconductor multilayer structure, and a reflection layer of a metallic material. The transparent layer has such a thickness that interference caused by multiple reflection of light inputted to the transparent layer can be suppressed.
摘要翻译：半导体发光器件包括支撑结构和发光结构。支撑结构包括支撑基板和设置在支撑基板的一个表面上的支撑基板侧接合层。发光结构包括结合到支撑基板侧接合层的发光结构侧接合层，设置在与支撑基板相对的支撑基板侧接合层上的反射区域，以及包括发光层设置在与发光结构侧接合层相对的反射区域，用于发射具有预定波长的光;以及光提取表面，设置在与反射区域相对的发光层上，用于漫反射地反射光。反射区域包括具有比半导体多层结构的折射率低的材料的透明层和金属材料的反射层。透明层具有能够抑制由输入到透明层的光的多次反射引起的干涉的厚度。

10. 发明申请

US20100078659A1 Light-emitting element 有权
标题翻译：发光元件
公开(公告)号：US20100078659A1
公开(公告)日：2010-04-01
申请号：US12585827
申请日：2009-09-25
申请人： Kazuyuki Iizuka , Masahiro Arai
发明人： Kazuyuki Iizuka , Masahiro Arai
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/387
摘要： A light-emitting element includes a semiconductor laminated structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type and an active layer sandwiched by the first and second semiconductor layers, a first electrode on one surface side of the semiconductor laminated structure, a conductive reflective layer on an other surface side of the semiconductor laminated structure for reflecting light emitted from the active layer, a contact portion partially formed between the semiconductor laminated structure and the conductive reflective layer and being in ohmic contact with the semiconductor laminated structure, and a second electrode on a part of a surface of the conductive reflective layer on the semiconductor laminated structure without contacting the semiconductor laminated structure for feeding current to the contact portion.
摘要翻译：发光元件包括半导体层叠结构，其包括第一导电类型的第一半导体层，不同于第一导电类型的第二导电类型的第二半导体层和由第一和第二半导体层夹持的有源层，在半导体层叠结构的一个表面侧的第一电极，在用于反射从有源层发射的光的半导体层叠结构的另一个表面侧上的导电反射层，部分地形成在半导体层叠结构和导电反射层之间的接触部并且与半导体层叠结构欧姆接触，并且在半导体层叠结构上的导电反射层的一部分表面上的第二电极，而不接触用于将电流馈送到接触部分的半导体层叠结构。

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