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1. 发明授权

US4472343A Tubular film process 失效
标题翻译：管状膜工艺
公开(公告)号：US4472343A
公开(公告)日：1984-09-18
申请号：US443724
申请日：1982-11-22
申请人： Shinji Kawamura , Masato Doi
发明人： Shinji Kawamura , Masato Doi
IPC分类号： B29C47/88 , B29F3/08
CPC分类号： B29C47/8835 , B29C47/0026
摘要： A tubular film process wherein molten resin is extruded from an extrusion die into a tubular resin, blown by an internal pressure, cooling air is discharged at least at a point between the vicinity of the extrusion die and the vicinity of a bubble expansion ending point in a direction of the extrusion of the resin and in a direction opposite to the extrusion of the resin to, thereby cool the tubular resin, and the tubular resin is continuously taken up upon being cooled and solidified. The cooling air has higher flow rate in the extrusion direction. The cooling air is discharged not only in the direction of the extrusion of the resin but also in the direction opposite to the extrusion of the resin, whereby hot air stream is prevented from accompanying the flow of the resin, thus enabling to effectively cool the tubular resin.
摘要翻译：一种管状膜工艺，其中熔融树脂从挤出模头挤出成管状树脂，通过内部压力吹送，冷却空气至少在挤出模具附近和气泡膨胀终点附近的点处排出树脂的挤出方向和与树脂的挤出相反的方向，从而冷却管状树脂，并且管状树脂在冷却和固化时被连续吸收。冷却空气在挤出方向上具有较高的流速。冷却空气不仅在树脂的挤出方向上而且在与树脂的挤出相反的方向上排出，从而防止伴随树脂流动的热空气流，从而能够有效地冷却管状树脂。

2. 发明授权

US07888690B2 Image display unit with light emitting devices having a resin surrounding the light emitting devices 有权
标题翻译：图像显示单元，其具有围绕发光器件的树脂的发光器件
公开(公告)号：US07888690B2
公开(公告)日：2011-02-15
申请号：US12034415
申请日：2008-02-20
申请人： Toshiaki Iwafuchi , Toyoharu Oohata , Masato Doi
发明人： Toshiaki Iwafuchi , Toyoharu Oohata , Masato Doi
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , G02F2001/13613 , H01L21/2007 , H01L21/568 , H01L21/6835 , H01L24/16 , H01L24/24 , H01L24/81 , H01L24/82 , H01L25/0753 , H01L27/12 , H01L27/1214 , H01L27/1266 , H01L27/156 , H01L33/0079 , H01L33/0095 , H01L2221/6835 , H01L2221/68354 , H01L2221/68359 , H01L2221/68368 , H01L2224/04105 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/16245 , H01L2224/18 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73267 , H01L2224/81001 , H01L2224/81136 , H01L2224/92244 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/10329 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/3025 , H01L2924/3512 , Y10S438/982 , H01L2924/00 , H01L2224/05599
摘要： An image display unit and a method of producing the image display unit, wherein the image display unit includes an array of a plurality of light emitting devices for displaying an image, and wherein the method of producing the image display unit employs, for example, a space expanding transfer, whereby a first transfer step includes transferring the devices arrayed on a first substrate to a temporary holding member such that the devices are spaced from each other with a pitch larger than a pitch of the devices arrayed on the first substrate, a second holding step includes holding the devices on the temporary holding member, and a third transfer step includes transferring the devices held on the temporary holding member onto a second board such that the devices are spaced from each other with a pitch larger than the pitch of the devices held on the temporary holding member.
摘要翻译：一种图像显示单元和图像显示单元的制造方法，其中，所述图像显示单元包括用于显示图像的多个发光装置的阵列，并且其中，所述图像显示单元的制造方法采用例如空间膨胀转移，其中第一转移步骤包括将排列在第一衬底上的器件转移到临时保持构件，使得器件彼此间隔开，间距大于排列在第一衬底上的器件的间距，保持步骤包括将设备保持在临时保持构件上，第三传送步骤包括将保持在临时保持构件上的设备转移到第二板上，使得设备彼此间隔开，间距大于设备的间距举行临时控股成员。

3. 发明申请

US20090290337A1 MOUNTING METHOD, MOUNTED STRUCTURE, MANUFACTUREING METHOD FOR ELECTRONIC EQUIPMENT, ELECTRONIC EQUIPMENT, MANUFACTURING METHOD FOR LIGHT-EMITTING DIODE DISPLAY, AND LIGHT-EMITTING DIODE DISPLAY 有权
标题翻译：电子设备的安装方法，安装结构，制造方法，电子设备，用于发光二极管显示的制造方法和发光二极管显示
公开(公告)号：US20090290337A1
公开(公告)日：2009-11-26
申请号：US12373479
申请日：2007-06-25
申请人： Katsuhiro Tomoda , Masato Doi , Toshiya Takagishi , Toshiaki Kanemitsu
发明人： Katsuhiro Tomoda , Masato Doi , Toshiya Takagishi , Toshiaki Kanemitsu
IPC分类号： F21V9/00 , B29C39/10 , B29C39/44 , B29C41/50 , H01L21/56
CPC分类号： G09F9/33 , H01L24/32 , H01L33/52 , H01L2224/26175 , H01L2224/27013 , H01L2224/83051 , H01L2224/83143 , H01L2224/83385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01023 , H01L2924/01027 , H01L2924/01033 , H01L2924/01047 , H01L2924/01055 , H01L2924/01078 , H01L2924/01079 , H01L2924/10349 , H01L2924/12041 , H01L2924/12042 , H01L2924/12043 , H01L2924/14 , H01L2924/1461 , H01L2924/15156 , H01L2924/15788 , H05K3/305 , H01L2924/00
摘要： Provided is a mounting method making it possible to, when an object such as an element, or more particularly, a microscopic object is mounted on a substrate, achieve mounting readily and reliably with high positional precision by: forming an element holding layer 12, which is made of a material whose viscosity can be controlled, on a substrate 11; controlling the viscosity of a first part 12a of the element holding layer 12, which includes a mounting region for an element, into a viscosity making the element naturally movable, and controlling the viscosity of a second part 12b of the element holding layer 12 outside the first part 12a into a viscosity making the element naturally immovable; and after mounting one element 13 in the first part 12a, controlling the viscosity of the first part 12a into the viscosity making the element 13 naturally immovable.
摘要翻译：提供了一种安装方法，使得当诸如元件的物体，或更具体地，微观物体被安装在基板上时，通过以下方式实现安装：通过以下方式实现安装：通过形成元件保持层12，可以容易且可靠地以高位置精度进行安装在基板11上由可以控制粘度的材料制成; 将包含元件安装区域的元件保持层12的第一部分12a的粘度控制成使该元件自然移动的粘度，并将元件保持层12的第二部分12b的粘度控制在第一部分12a成为使该元素自然不动的粘度; 并且在第一部分12a中安装一个元件13之后，将第一部分12a的粘度控制成使得元件13自然不可移动的粘度。

4. 发明申请

US20080050599A1 Crystal film, crystal substrate, and semiconductor device 有权
公开(公告)号：US20080050599A1
公开(公告)日：2008-02-28
申请号：US11976246
申请日：2007-10-23
申请人： Etsuo Morita , Yousuke Murakami , Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
发明人： Etsuo Morita , Yousuke Murakami , Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
IPC分类号： B32B9/04
CPC分类号： H01L21/02538 , C30B25/02 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265
摘要： A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1 elongating from below. The threading dislocation D1 is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1 is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1 expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.

5. 发明授权

US07250320B2 Semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, image display device, manufacturing method thereof, illuminating device and manufacturing method thereof 失效
标题翻译：半导体发光元件及其制造方法，集成半导体发光元件及其制造方法，图像显示装置及其制造方法，照明装置及其制造方法
公开(公告)号：US07250320B2
公开(公告)日：2007-07-31
申请号：US10512131
申请日：2004-02-19
申请人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Jun Suzuki , Toyoharu Oohata
发明人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Jun Suzuki , Toyoharu Oohata
IPC分类号： H01L29/22
CPC分类号： H01L33/20 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/24 , H01L33/32 , H01L2224/48137
摘要： A semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided.An n-type GaN layer is grown on a sapphire substrate, and a growth mask of SiN, for example, is formed thereon. On the n-type GaN layer exposed through an opening in the growth mask, a six-sided steeple-shaped n-type GaN layer is selectively grown, which has inclined crystal planes each composed of a plurality of crystal planes inclined from the major surface of the sapphire substrate by different angles of inclination to exhibit a convex plane as a whole. On the n-type GaN layer, an active layer and a p-type GaN layer are grown to make a light emitting element structure. Thereafter, a p-side electrode and an n-side electrode are formed.
摘要翻译：提供半导体发光元件，其制造方法，集成半导体发光器件，其制造方法，照明器件及其制造方法。在蓝宝石衬底上生长n型GaN层，例如在其上形成SiN的生长掩模。在通过生长掩模中的开口暴露的n型GaN层上，选择性地生长六边形尖状n型GaN层，其倾斜晶面各自由从主表面倾斜的多个晶面构成的蓝宝石衬底由不同的倾斜角度整体呈现凸面。在n型GaN层上生长有源层和p型GaN层以制成发光元件结构。此后，形成p侧电极和n侧电极。

6. 发明授权

US07129107B2 Process for producing a semiconductor light-emitting device 失效
公开(公告)号：US07129107B2
公开(公告)日：2006-10-31
申请号：US11096381
申请日：2005-03-31
申请人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata , Tomoyuki Kikutani
发明人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata , Tomoyuki Kikutani
IPC分类号： H01L29/20 , H01L31/036
CPC分类号： H01L33/24 , H01L21/02381 , H01L21/02395 , H01L21/02409 , H01L21/02411 , H01L21/02521 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/0256 , H01L21/02562 , H01L21/02573 , H01L21/0262 , H01L21/02642 , H01L33/007 , H01L33/0075 , H01L33/32 , H01L2224/48137 , H01L2224/48139
摘要： Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

7. 发明授权

US07087932B2 Semiconductor light-emitting device and semiconductor light-emitting device 有权
标题翻译：半导体发光器件和半导体发光器件
公开(公告)号：US07087932B2
公开(公告)日：2006-08-08
申请号：US10088463
申请日：2001-07-18
申请人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata
发明人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata
IPC分类号： H01L29/04
CPC分类号： H01L33/24 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02576 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L33/007 , H01L33/08
摘要： A semiconductor light-emitting element is provided which has a structure that does not complicate a fabrication process, can be formed in high precision and does not invite any degradation of crystallinity. A light-emitting element is formed, which includes a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type, a clad layer of a first conduction type, an active layer and a clad layer of a second conduction type, which are formed on the selective crystal growth layer wherein the active layer is formed so that the active layer extends in parallel to different crystal planes, the active layer is larger in size than a diffusion length of a constituent atom of a mixed crystal, or the active layer has a difference in at least one of a composition and a thickness thereof, thereby forming the active layer having a number of light-emitting wavelength regions whose emission wavelengths differ from one another. The element is so arranged that an electric current or currents are chargeable into the number of light-emitting wavelength regions. Because of the structure based on the selective growth, the band gap energy varies within the same active layer, thereby forming an element or device in high precision without complicating a fabrication process.
摘要翻译：提供具有不使制造工艺复杂化的结构的半导体发光元件，可以高精度地形成，并且不会引起结晶性的劣化。形成发光元件，其包括通过选择性地生长纤锌矿型化合物半导体，第一导电类型的包覆层，有源层和第二导电类型的覆盖层而形成的选择性晶体生长层，其中形成在选择性晶体生长层上，其中形成有源层使得有源层平行于不同的晶面延伸，活性层的尺寸大于混晶的构成原子的扩散长度，或活性层的活性层层的组成和厚度中的至少一个具有差异，由此形成具有多个发光波长彼此不同的发光波长区域的有源层。元件被布置成使得电流或电流可以充电到多个发光波长区域中。由于基于选择性增长的结构，带隙能量在相同的有源层内变化，从而以高精度形成元件或器件而不会使制造过程复杂化。

8. 发明申请

US20060169997A1 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US20060169997A1
公开(公告)日：2006-08-03
申请号：US11329589
申请日：2006-01-10
申请人： Jun Suzuki , Masato Doi , Hiroyuki Okuyama , Goshi Biwa
发明人： Jun Suzuki , Masato Doi , Hiroyuki Okuyama , Goshi Biwa
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , Y10S257/918
摘要： A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes a laminated semiconductor structure portion composed of at least a first conductivity type first cladding layer, an active layer and a second conductivity type second cladding layer, wherein an outer peripheral surface of this laminated semiconductor structure portion is formed as a curved surface shape which is protrusively curved or bent with respect to the outside of the laminated direction.
摘要翻译：提供了一种半导体发光器件。半导体发光装置包括由至少第一导电型第一包层，有源层和第二导电型第二包层构成的层叠半导体结构部，其中，该层叠半导体结构部的外周面形成为相对于层叠方向的外侧突出地弯曲或弯曲的曲面形状。

9. 发明授权

US07002183B2 Semiconductor light emitting device having a semiconductor layer formed by selective growth 失效
标题翻译：具有通过选择性生长形成的半导体层的半导体发光器件
公开(公告)号：US07002183B2
公开(公告)日：2006-02-21
申请号：US11077452
申请日：2005-03-09
申请人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata
发明人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , H01J63/04 , H01J63/06 , H01S5/227 , H01S5/2272 , H01S5/32341
摘要： Semiconductor light emitting devices are provided. The semiconductor light emitting device includes a base body, a selection mask having a stripe-shaped opening portion, the selection mask being formed on the base body, a semiconductor layer formed by selective growth from the opening portion in such a manner as to have a ridge line substantially parallel to long-sides of the opening portion, and a first conductive type cladding layer, an active layer, and a second conductive type cladding layer, which are formed on the semiconductor layer.
摘要翻译：提供半导体发光器件。半导体发光器件包括基体，具有条形开口部分的选择掩模，形成在基体上的选择掩模，通过从开口部分选择性地生长形成的半导体层，大致平行于开口部分的长边的脊线，以及形成在半导体层上的第一导电型包覆层，有源层和第二导电型包覆层。

10. 发明申请

US20050161661A1 Semiconductor light emitting device 失效
公开(公告)号：US20050161661A1
公开(公告)日：2005-07-28
申请号：US11077452
申请日：2005-03-09
申请人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata
发明人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata
IPC分类号： G09F9/33 , H01L33/08 , H01L33/24 , H01L33/32 , H01L33/36 , H01S5/042 , H01S5/227 , H01S5/323 , H01S5/40 , H01L29/06
CPC分类号： H01L33/24 , H01J63/04 , H01J63/06 , H01S5/227 , H01S5/2272 , H01S5/32341
摘要： Semiconductor light emitting devices are provided. The semiconductor light emitting device includes a base body, a selection mask having a stripe-shaped opening portion, the selection mask being formed on the base body, a semiconductor layer formed by selective growth from the opening portion in such a manner as to have a ridge line substantially parallel to long-sides of the opening portion, and a first conductive type cladding layer, an active layer, and a second conductive type cladding layer, which are formed on the semiconductor layer.

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