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1. 发明授权

US07250320B2 Semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, image display device, manufacturing method thereof, illuminating device and manufacturing method thereof 失效
标题翻译：半导体发光元件及其制造方法，集成半导体发光元件及其制造方法，图像显示装置及其制造方法，照明装置及其制造方法
公开(公告)号：US07250320B2
公开(公告)日：2007-07-31
申请号：US10512131
申请日：2004-02-19
申请人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Jun Suzuki , Toyoharu Oohata
发明人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Jun Suzuki , Toyoharu Oohata
IPC分类号： H01L29/22
CPC分类号： H01L33/20 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/24 , H01L33/32 , H01L2224/48137
摘要： A semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided.An n-type GaN layer is grown on a sapphire substrate, and a growth mask of SiN, for example, is formed thereon. On the n-type GaN layer exposed through an opening in the growth mask, a six-sided steeple-shaped n-type GaN layer is selectively grown, which has inclined crystal planes each composed of a plurality of crystal planes inclined from the major surface of the sapphire substrate by different angles of inclination to exhibit a convex plane as a whole. On the n-type GaN layer, an active layer and a p-type GaN layer are grown to make a light emitting element structure. Thereafter, a p-side electrode and an n-side electrode are formed.
摘要翻译：提供半导体发光元件，其制造方法，集成半导体发光器件，其制造方法，照明器件及其制造方法。在蓝宝石衬底上生长n型GaN层，例如在其上形成SiN的生长掩模。在通过生长掩模中的开口暴露的n型GaN层上，选择性地生长六边形尖状n型GaN层，其倾斜晶面各自由从主表面倾斜的多个晶面构成的蓝宝石衬底由不同的倾斜角度整体呈现凸面。在n型GaN层上生长有源层和p型GaN层以制成发光元件结构。此后，形成p侧电极和n侧电极。

2. 发明申请

US20050145865A1 Semiconductor light emitting element and method for manufacturing same, integrated semiconductor light-emitting device and method for manufacturing same, image display and method for manufacturing same, and illuminating device and method for manufacturing same 失效
标题翻译：半导体发光元件及其制造方法，集成半导体发光器件及其制造方法，图像显示及其制造方法以及照明装置及其制造方法
公开(公告)号：US20050145865A1
公开(公告)日：2005-07-07
申请号：US10512131
申请日：2004-02-19
申请人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Jun Suzuki , Toyoharu Oohata
发明人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Jun Suzuki , Toyoharu Oohata
IPC分类号： C23C16/34 , C02F1/24 , H01L21/28 , H01L33/08 , H01L33/16 , H01L33/32 , H01L33/00
CPC分类号： H01L33/20 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/24 , H01L33/32 , H01L2224/48137
摘要： A semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided. An n-type GaN layer is grown on a sapphire substrate, and a growth mask of SiN, for example, is formed thereon. On the n-type GaN layer exposed through an opening in the growth mask, a six-sided steeple-shaped n-type GaN layer is selectively grown, which has inclined crystal planes each composed of a plurality of crystal planes inclined from the major surface of the sapphire substrate by different angles of inclination to exhibit a convex plane as a whole. On the n-type GaN layer, an active layer and a p-type GaN layer are grown to make a light emitting element structure. Thereafter, a p-side electrode and an n-side electrode are formed.
摘要翻译：提供半导体发光元件，其制造方法，集成半导体发光器件，其制造方法，照明器件及其制造方法。在蓝宝石衬底上生长n型GaN层，例如在其上形成SiN的生长掩模。在通过生长掩模中的开口暴露的n型GaN层上，选择性地生长六边形尖状n型GaN层，其倾斜晶面各自由从主表面倾斜的多个晶面构成的蓝宝石衬底由不同的倾斜角度整体呈现凸面。在n型GaN层上生长有源层和p型GaN层以制成发光元件结构。此后，形成p侧电极和n侧电极。

3. 发明申请

US20070187704A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT, MANUFACTURING METHOD THEREOF, INTEGRATED SEMICONDUCTOR LIGHT EMITTING DEVICE, MANUFACTURING METHOD THEREOF, IMAGE DISPLAY DEVICE, MANUFACTURING METHOD THEREOF, ILLUMINATING DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体发光元件及其制造方法，集成半导体发光装置及其制造方法，图像显示装置及其制造方法，照明装置及其制造方法
公开(公告)号：US20070187704A1
公开(公告)日：2007-08-16
申请号：US11691299
申请日：2007-03-26
申请人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Jun Suzuki , Toyoharu Oohata
发明人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Jun Suzuki , Toyoharu Oohata
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/24 , H01L33/32 , H01L2224/48137
摘要： A semiconductor light emitting element, manufacturing method. thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided. An n-type GaN layer is grown on a sapphire substrate, and a growth mask of SiN, for example, is formed thereon. On the n-type GaN layer exposed through an opening in the growth mask, a six-sided steeple-shaped n-type GaN layer is selectively grown, which has inclined crystal planes each composed of a plurality of crystal planes inclined from the major surface of the sapphire substrate by different angles of inclination to exhibit a convex plane as a whole. On the n-type GaN layer, an active layer and a p-type GaN layer are grown to make a light emitting element structure. Thereafter, a p-side electrode and an n-side electrode are formed.
摘要翻译：半导体发光元件，制造方法。提供集成半导体发光器件，其制造方法，照明器件及其制造方法。在蓝宝石衬底上生长n型GaN层，例如在其上形成SiN的生长掩模。在通过生长掩模中的开口暴露的n型GaN层上，选择性地生长六边形尖状n型GaN层，其倾斜晶面各自由从主表面倾斜的多个晶面构成的蓝宝石衬底，通过不同的倾斜角度整体呈现凸面。在n型GaN层上生长有源层和p型GaN层以制成发光元件结构。此后，形成p侧电极和n侧电极。

4. 发明授权

US07564064B2 Semiconductor light emitting device, an integrated semiconductor light emitting apparatus, an image display apparatus, and an illuminating apparatus having a semiconductor layer with conical crystal portion 有权
标题翻译：半导体发光器件，集成半导体发光器件，图像显示设备和具有带有锥形晶体部分的半导体层的照明设备
公开(公告)号：US07564064B2
公开(公告)日：2009-07-21
申请号：US11682770
申请日：2007-03-06
申请人： Toyoharu Oohata , Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Jun Suzuki
发明人： Toyoharu Oohata , Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Jun Suzuki
IPC分类号： H01L27/15
CPC分类号： H01L33/20 , H01L33/007 , H01L33/24
摘要： An n-type GaN layer is grown onto a sapphire substrate and a hexagonal etching mask is formed onto the n-type GaN layer as provided. The n-type GaN layer is etched to a predetermined depth by using the etching mask by the RIE method. A hexagonal prism portion whose upper surface is a C plane is formed. After the etching mask was removed, an active layer and a p-type GaN layer are sequentially grown onto the whole surface of the substrate so as to cover the hexagonal prism portion, thereby forming a light emitting device structure. After that, a p-side electrode is formed onto the p-type GaN layer of the hexagonal prism portion and an n-side electrode is formed onto the n-type GaN layer.
摘要翻译：在蓝宝石衬底上生长n型GaN层，并且在所提供的n型GaN层上形成六边形蚀刻掩模。通过使用RIE法的蚀刻掩模将n型GaN层蚀刻到预定深度。形成上表面为C面的六边形棱镜部。在除去蚀刻掩模之后，将有源层和p型GaN层依次生长到基板的整个表面上以覆盖六边形棱镜部分，从而形成发光器件结构。之后，在六边形棱镜部分的p型GaN层上形成p侧电极，在n型GaN层上形成n侧电极。

5. 发明申请

US20070190677A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT, MANUFACTURING METHOD THEREOF, INTEGRATED SEMICONDUCTOR LIGHT EMITTING DEVICE, MANUFACTURING METHOD THEREOF, IMAGE DISPLAY DEVICE, MANUFACTURING METHOD THEREOF, ILLUMINATING DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体发光元件及其制造方法，集成半导体发光装置及其制造方法，图像显示装置及其制造方法，照明装置及其制造方法
公开(公告)号：US20070190677A1
公开(公告)日：2007-08-16
申请号：US11691292
申请日：2007-03-26
申请人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Jun Suzuki , Toyoharu Oohata
发明人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Jun Suzuki , Toyoharu Oohata
IPC分类号： H01L21/00
CPC分类号： H01L33/20 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/24 , H01L33/32 , H01L2224/48137
摘要： A semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided. An n-type GaN layer is grown on a sapphire substrate, and a growth mask of SiN, for example, is formed thereon. On the n-type GaN layer exposed through an opening in the growth mask, a six-sided steeple-shaped n-type GaN layer is selectively grown, which has inclined crystal planes each composed of a plurality of crystal planes inclined from the major surface of the sapphire substrate by different angles of inclination to exhibit a convex plane as a whole. On the n-type GaN layer, an active layer and a p-type GaN layer are grown to make a light emitting element structure. Thereafter, a p-side electrode and an n-side electrode are formed.
摘要翻译：提供半导体发光元件，其制造方法，集成半导体发光器件，其制造方法，照明器件及其制造方法。在蓝宝石衬底上生长n型GaN层，例如在其上形成SiN的生长掩模。在通过生长掩模中的开口暴露的n型GaN层上，选择性地生长六边形尖状n型GaN层，其倾斜晶面各自由从主表面倾斜的多个晶面构成的蓝宝石衬底由不同的倾斜角度整体呈现凸面。在n型GaN层上生长有源层和p型GaN层以制成发光元件结构。此后，形成p侧电极和n侧电极。

6. 发明申请

US20070147453A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, ITS MANUFACTURING METHOD, INTEGRATED SEMICONDUCTOR LIGHT EMITTING APPARATUS, ITS MANUFACTURING METHOD, IMAGE DISPLAY APPARATUS, ITS MANUFACTURING METHOD, ILLUMINATING APPARATUS, AND ITS MANUFACTURING METHOD 有权
标题翻译：半导体发光装置及其制造方法，集成半导体发光装置及其制造方法，图像显示装置及其制造方法，照相装置及其制造方法
公开(公告)号：US20070147453A1
公开(公告)日：2007-06-28
申请号：US11682770
申请日：2007-03-06
申请人： Toyoharu Oohata , Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Jun Suzuki
发明人： Toyoharu Oohata , Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Jun Suzuki
IPC分类号： H01S5/00 , H01S3/04
CPC分类号： H01L33/20 , H01L33/007 , H01L33/24
摘要： An n-type GaN layer is grown onto a sapphire substrate and a hexagonal etching mask is formed onto the n-type GaN layer as provided. The n-type GaN layer is etched to a predetermined depth by using the etching mask by the RIE method. A hexagonal prism portion whose upper surface is a C plane is formed. After the etching mask was removed, an active layer and a p-type GaN layer are sequentially grown onto the whole surface of the substrate so as to cover the hexagonal prism portion, thereby forming a light emitting device structure. After that, a p-side electrode is formed onto the p-type GaN layer of the hexagonal prism portion and an n-side electrode is formed onto the n-type GaN layer.
摘要翻译：在蓝宝石衬底上生长n型GaN层，并且在所提供的n型GaN层上形成六边形蚀刻掩模。通过使用RIE法的蚀刻掩模将n型GaN层蚀刻到预定深度。形成上表面为C面的六边形棱镜部。在除去蚀刻掩模之后，将有源层和p型GaN层依次生长到基板的整个表面上以覆盖六边形棱镜部分，从而形成发光器件结构。之后，在六边形棱镜部分的p型GaN层上形成p侧电极，在n型GaN层上形成n侧电极。

7. 发明授权

US07205168B2 Semiconductor light emitting device, its manufacturing method, integrated semiconductor light emitting apparatus, its manufacturing method, illuminating apparatus, and its manufacturing method 有权
标题翻译：半导体发光器件，其制造方法，集成半导体发光装置，其制造方法，照明装置及其制造方法
公开(公告)号：US07205168B2
公开(公告)日：2007-04-17
申请号：US10494972
申请日：2003-09-08
申请人： Toyoharu Oohata , Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Jun Suzuki
发明人： Toyoharu Oohata , Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Jun Suzuki
IPC分类号： H01L21/00
CPC分类号： H01L33/20 , H01L33/007 , H01L33/24
摘要： An n-type GaN layer is grown onto a sapphire substrate and a hexagonal etching mask is formed onto the n-type GaN layer as provided. The n-type GaN layer is etched to a predetermined depth by using the etching mask by the RIE method. A hexagonal prism portion whose upper surface is a C plane is formed. After the etching mask was removed, an active layer and a p-type GaN layer are sequentially grown onto the whole surface of the substrate so as to cover the hexagonal prism portion, thereby forming a light emitting device structure. After that, a p-side electrode is formed onto the p-type GaN layer of the hexagonal prism portion and an n-side electrode is formed onto the n-type GaN layer.
摘要翻译：在蓝宝石衬底上生长n型GaN层，并且在所提供的n型GaN层上形成六边形蚀刻掩模。通过使用RIE法的蚀刻掩模将n型GaN层蚀刻到预定深度。形成上表面为C面的六边形棱镜部。在除去蚀刻掩模之后，将有源层和p型GaN层依次生长到基板的整个表面上以覆盖六边形棱镜部分，从而形成发光器件结构。之后，在六边形棱镜部分的p型GaN层上形成p侧电极，在n型GaN层上形成n侧电极。

8. 发明申请

US20080050599A1 Crystal film, crystal substrate, and semiconductor device 有权
公开(公告)号：US20080050599A1
公开(公告)日：2008-02-28
申请号：US11976246
申请日：2007-10-23
申请人： Etsuo Morita , Yousuke Murakami , Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
发明人： Etsuo Morita , Yousuke Murakami , Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
IPC分类号： B32B9/04
CPC分类号： H01L21/02538 , C30B25/02 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265
摘要： A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1 elongating from below. The threading dislocation D1 is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1 is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1 expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.

9. 发明授权

US07129107B2 Process for producing a semiconductor light-emitting device 失效
公开(公告)号：US07129107B2
公开(公告)日：2006-10-31
申请号：US11096381
申请日：2005-03-31
申请人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata , Tomoyuki Kikutani
发明人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata , Tomoyuki Kikutani
IPC分类号： H01L29/20 , H01L31/036
CPC分类号： H01L33/24 , H01L21/02381 , H01L21/02395 , H01L21/02409 , H01L21/02411 , H01L21/02521 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/0256 , H01L21/02562 , H01L21/02573 , H01L21/0262 , H01L21/02642 , H01L33/007 , H01L33/0075 , H01L33/32 , H01L2224/48137 , H01L2224/48139
摘要： Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

10. 发明授权

US07087932B2 Semiconductor light-emitting device and semiconductor light-emitting device 有权
标题翻译：半导体发光器件和半导体发光器件
公开(公告)号：US07087932B2
公开(公告)日：2006-08-08
申请号：US10088463
申请日：2001-07-18
申请人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata
发明人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata
IPC分类号： H01L29/04
CPC分类号： H01L33/24 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02576 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L33/007 , H01L33/08
摘要： A semiconductor light-emitting element is provided which has a structure that does not complicate a fabrication process, can be formed in high precision and does not invite any degradation of crystallinity. A light-emitting element is formed, which includes a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type, a clad layer of a first conduction type, an active layer and a clad layer of a second conduction type, which are formed on the selective crystal growth layer wherein the active layer is formed so that the active layer extends in parallel to different crystal planes, the active layer is larger in size than a diffusion length of a constituent atom of a mixed crystal, or the active layer has a difference in at least one of a composition and a thickness thereof, thereby forming the active layer having a number of light-emitting wavelength regions whose emission wavelengths differ from one another. The element is so arranged that an electric current or currents are chargeable into the number of light-emitting wavelength regions. Because of the structure based on the selective growth, the band gap energy varies within the same active layer, thereby forming an element or device in high precision without complicating a fabrication process.
摘要翻译：提供具有不使制造工艺复杂化的结构的半导体发光元件，可以高精度地形成，并且不会引起结晶性的劣化。形成发光元件，其包括通过选择性地生长纤锌矿型化合物半导体，第一导电类型的包覆层，有源层和第二导电类型的覆盖层而形成的选择性晶体生长层，其中形成在选择性晶体生长层上，其中形成有源层使得有源层平行于不同的晶面延伸，活性层的尺寸大于混晶的构成原子的扩散长度，或活性层的活性层层的组成和厚度中的至少一个具有差异，由此形成具有多个发光波长彼此不同的发光波长区域的有源层。元件被布置成使得电流或电流可以充电到多个发光波长区域中。由于基于选择性增长的结构，带隙能量在相同的有源层内变化，从而以高精度形成元件或器件而不会使制造过程复杂化。

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