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1. 发明授权

US06730447B2 Manufacturing system in electronic devices 失效
标题翻译：电子设备制造系统
公开(公告)号：US06730447B2
公开(公告)日：2004-05-04
申请号：US10092486
申请日：2002-03-08
申请人： Shinichi Ito , Tatsuhiko Higashiki , Hiroshi Ikegami , Nobuo Hayasaka
发明人： Shinichi Ito , Tatsuhiko Higashiki , Hiroshi Ikegami , Nobuo Hayasaka
IPC分类号： G03C500
CPC分类号： G03F7/70633 , B23K26/04 , B23K26/042 , B23K2101/40 , G03F9/7076 , Y10S430/146 , Y10T29/413
摘要： A laser processing apparatus comprises a laser oscillator for producing a laser beam to selectively remove part of a substrate to be processed, a scanning system for applying the laser beam to an arbitrary position of the substrate and incident means for applying the laser beam to the substrate substantially at right angle.
摘要翻译：激光加工装置包括：激光振荡器，用于产生激光束以选择性地去除待处理的基板的一部分，用于将激光束施加到基板的任意位置的扫描系统和用于将激光束施加到基板的入射装置基本上是直角。

2. 发明授权

US06475285B2 Deposition apparatus 失效
标题翻译：沉积装置
公开(公告)号：US06475285B2
公开(公告)日：2002-11-05
申请号：US09817196
申请日：2001-03-27
申请人： Hiroshi Ikegami , Nobuo Hayasaka , Shinichi Ito , Katsuya Okumura
发明人： Hiroshi Ikegami , Nobuo Hayasaka , Shinichi Ito , Katsuya Okumura
IPC分类号： C23C1600
CPC分类号： B05C5/005
摘要： A deposition apparatus includes a chemical discharging nozzle for continuously discharging chemicals to a substrate to be processed, a gas spraying section arranged below the chemical discharging nozzle, for spraying gas on the chemicals discharged from the chemical discharging nozzle and changing an orbit of the chemicals by pressure of the gas, a chemical collecting section for collecting the chemicals the orbit of which is changed by the gas spraying section, the chemical collecting section being arranged so as to interpose the chemicals between the gas spraying section and the chemical collecting section, and a moving section for moving the chemical discharging nozzle and the substrate relatively with each other. The gas spraying section includes a laser oscillator for emitting a laser beam, and a gas generating film that generates the gas when heated and gasified by the laser beam emitted from the laser oscillator.
摘要翻译：沉积设备包括用于将化学品连续地排放到待处理基板的化学物质排放喷嘴，设置在化学物质排放喷嘴下方的气体喷射部分，用于将化学物质排出喷嘴上排出的化学物质喷射并改变化学品的轨道气体的压力，用于收集由气体喷射部分改变其轨道的化学物质的化学收集部分，化学收集部分布置成将气体喷射部分和化学收集部分之间的化学物质介入，使所述化学物质排出喷嘴和所述基板彼此相对移动的移动部。气体喷射部分包括用于发射激光束的激光振荡器，以及当由激光振荡器发射的激光束被加热和气化时产生气体的气体发生膜。

3. 发明授权

US06828684B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06828684B2
公开(公告)日：2004-12-07
申请号：US10392967
申请日：2003-03-21
申请人： Hiroshi Ikegami , Rempei Nakata , Takashi Yoda , Nobuo Hayasaka , Yoshimi Hisatsune
发明人： Hiroshi Ikegami , Rempei Nakata , Takashi Yoda , Nobuo Hayasaka , Yoshimi Hisatsune
IPC分类号： H01L2348
CPC分类号： H01L23/53238 , H01L21/0217 , H01L21/02274 , H01L21/02307 , H01L21/02315 , H01L21/3122 , H01L21/76838 , H01L24/11 , H01L2224/13099 , H01L2224/45144 , H01L2224/45147 , H01L2924/00011 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/04953 , H01L2924/12042 , H01L2924/19043 , H01L2924/30105 , Y10S438/959 , H01L2924/00 , H01L2924/01005 , H01L2924/01004 , H01L2924/00014
摘要： There is provided a semiconductor device including a semiconductor substrate and a conductive layer above the semiconductor substrate, wherein the conductive layer contains copper, a surface region of the conductive layer contains at least one of C—H bonds and C—C bonds, and a total amount of C atoms forming the C—H bonds and C atoms forming the C—C bonds in the surface region is 30 atomic % or more of a whole amount of elements in the surface region.
摘要翻译：提供一种半导体器件，其包括半导体衬底和在半导体衬底之上的导电层，其中导电层包含铜，导电层的表面区域包含CH键和CC键中的至少一个，并且总量C 形成CH键的原子和在表面区域中形成CC键的C原子在表面区域中的元素的总量为30原子％以上。

4. 发明授权

US06376894B1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06376894B1
公开(公告)日：2002-04-23
申请号：US09525107
申请日：2000-03-14
申请人： Hiroshi Ikegami , Keiichi Sasaki , Nobuo Hayasaka
发明人： Hiroshi Ikegami , Keiichi Sasaki , Nobuo Hayasaka
IPC分类号： H01L2900
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： There is provided a semiconductor device in which redundancy fuses formed in an upper layer wiring region can be cut without damaging an underlying Si substrate or adjacent regions. The semiconductor device comprises a lower layer wiring formed within an interlayer insulating film on the Si substrate, and an upper layer metal wiring made of Al, Cu or the like, formed above the lower layer wiring and connected thereto through a via metal, wherein the redundancy fuses are formed in the same wiring layer as the upper layer metal wiring. For cutting a fuse by irradiating with a laser having a wavelength in a range of 1,000 to 1,100 nm and a beam diameter D (&mgr;m), the fuse may be designed to have a film thickness T (&mgr;m) and a width W (&mgr;m) which satisfy T≦(−0.15 (D+2&sgr;)+0.46) exp (2W), where &sgr; (&mgr;m) is an alignment accuracy of the center of the laser beam to the center of the fuse, with the result that the fuse formed in the same wiring layer as the upper layer metal wiring can be cut without damaging the Si substrate, an adjacent fuse and the upper layer metal wiring.
摘要翻译：提供了一种半导体器件，其中可以切割形成在上层布线区域中的冗余熔丝而不损坏下面的Si衬底或相邻区域。半导体器件包括形成在Si衬底上的层间绝缘膜内的下层布线和由Al，Cu等制成的上层金属布线，其形成在下层布线的上方并通过通孔金属连接，冗余熔丝形成在与上层金属布线相同的布线层中。为了通过用波长在1000至1100nm的波长和光束直径D（母体）的激光照射来切割熔丝，可以将熔丝设计成具有膜厚T（mum）和宽度W（mum）其满足T <=（ - 0.15（D + 2sigma）+0.46）exp（2W），其中σ（mum）是激光束的中心对熔丝的中心的对准精度，结果是熔丝形成在与上层金属布线相同的布线层中，不会损坏Si基板，相邻的熔丝和上层金属布线。

5. 发明授权

US06709966B1 Semiconductor device, its manufacturing process, position matching mark, pattern forming method and pattern forming device 失效
标题翻译：半导体器件，其制造工艺，位置匹配标记，图案形成方法和图案形成装置
公开(公告)号：US06709966B1
公开(公告)日：2004-03-23
申请号：US09606152
申请日：2000-06-29
申请人： Yoshimi Hisatsune , Keiichi Sasaki , Hiroshi Ikegami , Mie Matsuo , Nobuo Hayasaka , Katsuya Okumura
发明人： Yoshimi Hisatsune , Keiichi Sasaki , Hiroshi Ikegami , Mie Matsuo , Nobuo Hayasaka , Katsuya Okumura
IPC分类号： H01L2144
CPC分类号： H01L24/81 , H01L21/6835 , H01L21/76877 , H01L24/11 , H01L24/13 , H01L24/742 , H01L2224/11003 , H01L2224/1132 , H01L2224/1183 , H01L2224/13099 , H01L2224/13111 , H01L2224/16 , H01L2224/81121 , H01L2224/81136 , H01L2224/81801 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01009 , H01L2924/01013 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15787 , H05K3/207 , H05K3/4007 , H05K2201/0367 , H05K2201/083 , H05K2203/0113 , H05K2203/104 , H01L2924/00012 , H01L2924/00 , H01L2224/0401
摘要： A semiconductor device comprising the bump containing magnetic body, magnetic body, the bump including non-magnetic body for at least partially covering the magnetic body, mixture of magnetic particles and non-magnetic particles and the bump including baked magnetic particles and baked non-magnetic particles.
摘要翻译：一种半导体器件，包括包括磁体的磁体，磁体，包括用于至少部分地覆盖磁体的非磁性体的凸起，磁性粒子和非磁性粒子的混合物以及包含焙烧磁性粒子的凸块和烘烤的非磁性体粒子。

6. 发明授权

US06566261B2 Semiconductor device and method of manufacturing the same 失效
公开(公告)号：US06566261B2
公开(公告)日：2003-05-20
申请号：US09946601
申请日：2001-09-06
申请人： Hiroshi Ikegami , Rempei Nakata , Takashi Yoda , Nobuo Hayasaka , Yoshimi Hisatsune
发明人： Hiroshi Ikegami , Rempei Nakata , Takashi Yoda , Nobuo Hayasaka , Yoshimi Hisatsune
IPC分类号： H01L2144
CPC分类号： H01L23/53238 , H01L21/0217 , H01L21/02274 , H01L21/02307 , H01L21/02315 , H01L21/3122 , H01L21/76838 , H01L24/11 , H01L2224/13099 , H01L2224/45144 , H01L2224/45147 , H01L2924/00011 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/04953 , H01L2924/12042 , H01L2924/19043 , H01L2924/30105 , Y10S438/959 , H01L2924/00 , H01L2924/01005 , H01L2924/01004 , H01L2924/00014
摘要： There is provided a semiconductor device including a semiconductor substrate and a conductive layer above the semiconductor substrate, wherein the conductive layer contains copper, a surface region of the conductive layer contains at least one of C—H bonds and C—C bonds, and a total amount of C atoms forming the C—H bonds and C atoms forming the C—C bonds in the surface region is 30 atomic % or more of a whole amount of elements in the surface region.

7. 发明授权

US06720522B2 Apparatus and method for laser beam machining, and method for manufacturing semiconductor devices using laser beam machining 失效
标题翻译：用于激光束加工的装置和方法，以及使用激光束加工制造半导体器件的方法
公开(公告)号：US06720522B2
公开(公告)日：2004-04-13
申请号：US09983683
申请日：2001-10-25
申请人： Hiroshi Ikegami , Nobuo Hayasaka
发明人： Hiroshi Ikegami , Nobuo Hayasaka
IPC分类号： B23K2600
CPC分类号： H01L21/76898 , B23K26/0732 , B23K26/0738 , B23K26/082 , B23K26/1224 , B23K26/16 , B23K26/361 , B23K26/40 , B23K2101/40 , B23K2103/50 , C23F1/18 , H01L21/268 , H01L21/30604 , H01L21/32131 , H01L21/32134
摘要： In a laser beam machining method, a liquid, through which a laser beam can be transmitted, is supplied to the target surface of an object to be processed. A laser beam is guided to the target surface through the liquid. The laser beam processes the target surface under the application of ultrasonic vibration.
摘要翻译：在激光束加工方法中，可以将激光束透射的液体供给到待处理物体的目标表面。激光束通过液体被引导到目标表面。激光束在超声波振动的应用下处理目标表面。

8. 发明授权

US08283755B2 Multichip semiconductor device, chip therefor and method of formation thereof 有权
标题翻译：多芯片半导体器件，芯片及其形成方法
公开(公告)号：US08283755B2
公开(公告)日：2012-10-09
申请号：US13067180
申请日：2011-05-13
申请人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
发明人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
IPC分类号： H01L29/40
CPC分类号： H01L23/642 , H01L21/76898 , H01L23/367 , H01L23/481 , H01L25/0655 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/0557 , H01L2224/06181 , H01L2224/13025 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2225/06572 , H01L2225/06589 , H01L2225/1023 , H01L2225/1058 , H01L2924/01046 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/13091 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/1532 , H01L2924/15331 , H01L2924/00
摘要： A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.
摘要翻译：公开了一种多芯片半导体器件，其中堆叠芯片，每个芯片包括形成在顶部的半导体衬底和电路部件，以及形成在半导体衬底的顶部上的层间绝缘膜。至少一个芯片具有穿过半导体衬底和层间绝缘膜的通孔中形成的金属的连接插头。具有连接插头的芯片通过该连接插头与另一个芯片电连接。

9. 发明授权

US08174093B2 Multichip semiconductor device, chip therefor and method of formation thereof 有权
公开(公告)号：US08174093B2
公开(公告)日：2012-05-08
申请号：US12926104
申请日：2010-10-26
申请人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
发明人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
IPC分类号： H01L29/40
CPC分类号： H01L23/642 , H01L21/76898 , H01L23/367 , H01L23/481 , H01L25/0655 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/0557 , H01L2224/06181 , H01L2224/13025 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2225/06572 , H01L2225/06589 , H01L2225/1023 , H01L2225/1058 , H01L2924/01046 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/13091 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/1532 , H01L2924/15331 , H01L2924/00
摘要： A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.

10. 发明申请

US20110215443A1 Multichip semiconductor device, chip therefor and method of formation thereof 有权
公开(公告)号：US20110215443A1
公开(公告)日：2011-09-08
申请号：US13067180
申请日：2011-05-13
申请人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
发明人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
IPC分类号： H01L29/41
CPC分类号： H01L23/642 , H01L21/76898 , H01L23/367 , H01L23/481 , H01L25/0655 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/0557 , H01L2224/06181 , H01L2224/13025 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2225/06572 , H01L2225/06589 , H01L2225/1023 , H01L2225/1058 , H01L2924/01046 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/13091 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/1532 , H01L2924/15331 , H01L2924/00
摘要： A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.

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