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1. 发明授权

US08419995B2 Imprint method 有权
标题翻译：印记法
公开(公告)号：US08419995B2
公开(公告)日：2013-04-16
申请号：US12563461
申请日：2009-09-21
申请人： Ikuo Yoneda , Kentaro Matsunaga , Yukiko Kikuchi , Yoshihisa Kawamura , Eishi Shiobara , Shinichi Ito , Tetsuro Nakasugi , Hirokazu Kato
发明人： Ikuo Yoneda , Kentaro Matsunaga , Yukiko Kikuchi , Yoshihisa Kawamura , Eishi Shiobara , Shinichi Ito , Tetsuro Nakasugi , Hirokazu Kato
IPC分类号： B28B11/08 , B29C35/08
CPC分类号： B29C37/0003 , B29C35/0888 , B29C37/006 , B29C59/022 , B29C2035/0822 , B29C2035/0827 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： An imprint method includes applying a light curable resin on a substrate to be processed, the substrate including first and second regions on which the light curable resin is applied, contacting an imprint mold with the light curable resin, curing the light curable resin by irradiating the light curable resin with light passing through the imprint mold, generating gas by performing a predetermined process to the light curable resin applied on a region of the substrate, the region including at least the first region, wherein an amount of gas generated from the light curable resin applied on the first region is larger than an amount of gas generated from the light curable resin of the second region, and forming a pattern by separating the imprint mold from the light curable resin after the gas being generated.
摘要翻译：压印方法包括将光固化树脂施加在待加工的基板上，所述基板包括施加有光固化树脂的第一和第二区域，使印模与光固化树脂接触，通过照射光固化树脂来固化光固化树脂光固化树脂，其光通过压印模具，通过对施加在基板的区域上的光固化树脂进行预定处理产生气体，该区域至少包括第一区域，其中从光可固化施加在第一区域上的树脂大于由第二区域的光固化树脂产生的气体的量，并且在产生气体之后通过从光固化树脂分离压印模具来形成图案。

2. 发明授权

US07968272B2 Semiconductor device manufacturing method to form resist pattern 失效
标题翻译：形成抗蚀剂图案的半导体器件制造方法
公开(公告)号：US07968272B2
公开(公告)日：2011-06-28
申请号：US11600198
申请日：2006-11-16
申请人： Daisuke Kawamura , Eishi Shiobara , Tomoyuki Takeishi , Kei Hayasaki , Yasunobu Onishi , Shinichi Ito , Tatsuhiko Higashiki
发明人： Daisuke Kawamura , Eishi Shiobara , Tomoyuki Takeishi , Kei Hayasaki , Yasunobu Onishi , Shinichi Ito , Tatsuhiko Higashiki
IPC分类号： G03C5/04
CPC分类号： G03F7/70925 , G03F7/70341
摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.
摘要翻译：本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的，待处理衬底的端部。在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为最接近被处理衬底。在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。

3. 发明授权

US07779777B2 Substrate processing apparatus and method 失效
标题翻译：基板加工装置及方法
公开(公告)号：US07779777B2
公开(公告)日：2010-08-24
申请号：US12466525
申请日：2009-05-15
申请人： Eishi Shiobara , Hirokazu Kato , Seiro Miyoshi , Shinichi Ito
发明人： Eishi Shiobara , Hirokazu Kato , Seiro Miyoshi , Shinichi Ito
IPC分类号： B05B15/02 , B05B3/00 , B05B1/28 , B05B13/02
CPC分类号： H01L21/67253 , H01L21/67051 , H01L21/6715
摘要： A substrate-processing apparatus includes a sample table which mounts thereon a to-be-processed substrate, a first line which supplies a chemical solution, a second line which supplies a cleaning liquid, a three-way valve connected to the first and second lines and configured to select one of the first and second lines, a filter provided across the first line upstream of the three-way valve, and configured to eliminate a foreign material from the chemical solution, and a nozzle provided downstream of the three-way valve and configured to discharge the chemical solution or the cleaning liquid when the first or second line is selected via the three-way valve. The three-way valve selects the first line when the substrate is coated with the chemical solution, and selects the second line in other cases.
摘要翻译：基板处理装置包括安装在被处理基板上的样品台，供给化学溶液的第一管线，供给清洗液的第二管线，与第一管路和第二管路连接的三通阀并且构造成选择第一和第二管线中的一个，设置在三通阀上游的第一线上的过滤器，并且被配置为从化学溶液中除去异物，以及设置在三通阀下游的喷嘴并且构造成当通过三通阀选择第一或第二管线时，排出化学溶液或清洗液体。当基材涂有化学溶液时，三通阀选择第一行，在其他情况下选择第二行。

4. 发明授权

US07687227B2 Resist pattern forming method and manufacturing method of semiconductor device 失效
标题翻译：半导体器件的抗蚀图案形成方法和制造方法
公开(公告)号：US07687227B2
公开(公告)日：2010-03-30
申请号：US11316898
申请日：2005-12-27
申请人： Eishi Shiobara , Daisuke Kawamura , Yasunobu Onishi , Shinichi Ito
发明人： Eishi Shiobara , Daisuke Kawamura , Yasunobu Onishi , Shinichi Ito
IPC分类号： G03F7/26
CPC分类号： G03F7/11 , G03F7/2041
摘要： According to an aspect of the invention, there is provided a resist pattern forming method of forming a resist pattern by immersion exposure, comprising forming a resist film on a substrate to be treated, a contact angle between the resist film and an immersion liquid being a first angle, forming a first cover film on the resist film, a contact angle between the first cover film and the immersion liquid being a second angle which is larger than the first angle, forming a second cover film on the first cover film, a contact angle between the second cover film and the immersion liquid being a third angle which is smaller than the second angle, and forming a latent image on the resist film by the immersion exposure.
摘要翻译：根据本发明的一个方面，提供了一种通过浸渍曝光形成抗蚀剂图案的抗蚀剂图案形成方法，包括在待处理的基底上形成抗蚀剂膜，所述抗蚀剂膜和浸渍液体之间的接触角为第一角度，在抗蚀剂膜上形成第一覆盖膜，第一覆盖膜和浸渍液体之间的接触角是大于第一角度的第二角度，在第一覆盖膜上形成第二覆盖膜，接触第二覆盖膜和浸液之间的角度是比第二角度小的第三角度，并且通过浸渍曝光在抗蚀剂膜上形成潜像。

5. 发明授权

US07662546B2 Apparatus for processing substrate and method of processing the same 失效
标题翻译：基板处理装置及其处理方法
公开(公告)号：US07662546B2
公开(公告)日：2010-02-16
申请号：US11304549
申请日：2005-12-16
申请人： Kenji Kawano , Shinichi Ito , Eishi Shiobara , Daisuke Kawamura , Kei Hayasaki
发明人： Kenji Kawano , Shinichi Ito , Eishi Shiobara , Daisuke Kawamura , Kei Hayasaki
IPC分类号： H05B3/68
CPC分类号： H01L21/6715 , B05C5/0254 , B05C11/08 , G03F7/168 , G03F7/3021 , G03F7/38 , G03F7/70358 , G03F7/70558 , H01L21/67109 , H01L21/67115
摘要： A heating apparatus for a substrate to be processed with a coating film has a chamber with an inner space, a heating plate heating the substrate to be processed in the inner space, and a partition member. The heating plate has a support surface which supports the substrate to be processed within the chamber. The partition member is arranged in the chamber so as to face the support surface. The partition member partitions the inner space into first and second spaces, and has a plurality of pores which allow the first and second spaces to communicate with each other. The support surface of the heating plate is set in the first space. An air stream formation mechanism forming an air stream is arranged in the second space. This mechanism discharges a substance evaporated from the photoresist film.
摘要翻译：用涂膜处理的基板的加热装置具有内部空间的室，在内部空间中加热被处理基板的加热板和分隔构件。加热板具有支撑表面，该支撑表面支撑在腔室内待处理的基底。分隔构件布置在腔室中以面向支撑表面。分隔构件将内部空间分隔成第一和第二空间，并且具有允许第一和第二空间彼此连通的多个孔。加热板的支撑表面设置在第一空间中。形成空气流的气流形成机构设置在第二空间中。该机理将从光致抗蚀剂膜蒸发的物质排出。

6. 发明申请

US20070128554A1 Semiconductor device manufacturing method to form resist pattern, and substrate processing apparatus 失效
标题翻译：形成抗蚀剂图案的半导体器件制造方法以及基板处理装置
公开(公告)号：US20070128554A1
公开(公告)日：2007-06-07
申请号：US11600198
申请日：2006-11-16
申请人： Daisuke Kawamura , Eishi Shiobara , Tomoyuki Takeishi , Kei Hayasaki , Yasunobu Onishi , Shinichi Ito , Tatsuhiko Higashiki
发明人： Daisuke Kawamura , Eishi Shiobara , Tomoyuki Takeishi , Kei Hayasaki , Yasunobu Onishi , Shinichi Ito , Tatsuhiko Higashiki
IPC分类号： G03F7/20
CPC分类号： G03F7/70925 , G03F7/70341
摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.
摘要翻译：本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的，待处理衬底的端部。在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为最接近被处理衬底。在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。

7. 发明授权

US07009148B2 Method of processing a substrate, heating apparatus, and method of forming a pattern 失效
标题翻译：处理基板的方法，加热装置以及形成图案的方法
公开(公告)号：US07009148B2
公开(公告)日：2006-03-07
申请号：US10682419
申请日：2003-10-10
申请人： Kenji Kawano , Shinichi Ito , Eishi Shiobara
发明人： Kenji Kawano , Shinichi Ito , Eishi Shiobara
IPC分类号： F27B5/14
CPC分类号： H01L21/67115 , G03F7/0042 , G03F7/0392 , G03F7/38 , H01L21/0273 , H01L21/67109
摘要： A method of processing a substrate, comprising forming a chemically amplified resist film on a substrate, irradiating energy beams to the chemically amplified resist film to form a latent image therein, carrying out heat treatment with respect to the chemically amplified resist film, heating treatment being carried out in a manner of relatively moving a heating section for heating the chemically amplified resist film and the substrate forming a gas stream flowing reverse to the relatively moving direction of the heating section between the lower surface of the heating section and the chemically amplified resist film.
摘要翻译：一种处理衬底的方法，包括在衬底上形成化学放大的抗蚀剂膜，将能量束照射到化学放大的抗蚀剂膜上以在其中形成潜像，对化学放大的抗蚀剂膜进行热处理，加热处理为以相对移动加热部分的方式进行加热，该加热部分用于加热化学放大的抗蚀剂膜和形成在加热部分的下表面和化学放大型抗蚀剂膜之间形成与加热部分的相对移动方向相反的方向流动的气流。

8. 发明授权

US08080429B2 Evaluation method for chemical solution, qualification method for chemical solution and method for manufacturing semiconductor device 有权
标题翻译：化学溶液的评价方法，化学溶液的鉴定方法以及半导体装置的制造方法
公开(公告)号：US08080429B2
公开(公告)日：2011-12-20
申请号：US12702549
申请日：2010-02-09
申请人： Shinichi Ito , Eishi Shiobara
发明人： Shinichi Ito , Eishi Shiobara
IPC分类号： G01N33/00
CPC分类号： G01N15/02 , G01N2015/0053 , Y10T436/25 , Y10T436/2575
摘要： A method for evaluating chemical solution includes determining number of particles in liquid for each size of the particles by measurement, expressing a relationship between size of the particles and number of particles corresponding to the size by a function based on the number of particles for each size of the particles determined by the measurement, and evaluating influence of particles having size less than or equal to a measurement limit in the liquid based on the function.
摘要翻译：用于评估化学溶液的方法包括通过测量确定每种尺寸的颗粒的液体中的颗粒数量，通过基于每种尺寸的颗粒数量来表示颗粒尺寸与颗粒尺寸之间的关系与基于颗粒数的函数关系通过测量确定的颗粒，并且基于该功能评估液体中尺寸小于或等于测量极限的颗粒的影响。

9. 发明申请

US20110059406A1 PATTERN FORMING METHOD 有权
标题翻译：图案形成方法
公开(公告)号：US20110059406A1
公开(公告)日：2011-03-10
申请号：US12878828
申请日：2010-09-09
申请人： Yoshihisa KAWAMURA , Eishi Shiobara , Shinichi Ito
发明人： Yoshihisa KAWAMURA , Eishi Shiobara , Shinichi Ito
IPC分类号： G03F7/20
CPC分类号： G03F7/0002
摘要： According to one embodiment, a pattern forming method is disclosed. The method can include selectively providing a curing agent to a pattern in a template, contacting the template provided the curing agent to a substrate, irradiating the curing agent with light where the template and the substrate are contacted each other to harden the curing agent, demolding the template from the substrate to form a curing agent pattern on the substrate, and etching the substrate on a basis of the curing agent pattern.
摘要翻译：根据一个实施例，公开了一种图案形成方法。该方法可以包括选择性地向模板中的图案提供固化剂，使提供固化剂的模板与基底接触，用光照射固化剂，其中模板和基底彼此接触以硬化固化剂，脱模所述模板从所述基板在所述基板上形成固化剂图案，并且基于所述固化剂图案来蚀刻所述基板。

10. 发明授权

US07527918B2 Pattern forming method and method for manufacturing a semiconductor device 失效
标题翻译：图案形成方法和制造半导体器件的方法
公开(公告)号：US07527918B2
公开(公告)日：2009-05-05
申请号：US10992349
申请日：2004-11-19
申请人： Takehiro Kondoh , Eishi Shiobara , Tomoyuki Takeishi , Kenji Chiba , Shinichi Ito
发明人： Takehiro Kondoh , Eishi Shiobara , Tomoyuki Takeishi , Kenji Chiba , Shinichi Ito
IPC分类号： G03F7/00
CPC分类号： G03F7/40 , G03F7/405
摘要： A pattern forming method comprises forming a first resist pattern on a substrate, irradiating light on the first resist pattern, forming a resist film including a cross-linking material on the substrate and the first resist pattern, forming a second resist pattern including a cross-linking layer formed at an interface between the first resist pattern and the resist film by causing a cross-linking reaction at the interface, and irradiating light on the first resist pattern including setting an amount of the light irradiated on the first resist pattern such that a dimension of the second resist pattern is to be a predetermined dimension based on a previously prepared relationship between a difference between a dimension relating to the first resist pattern and a dimension relating to the second resist pattern and the amount of the light irradiated on the first resist pattern.
摘要翻译：图案形成方法包括在基板上形成第一抗蚀剂图案，在第一抗蚀剂图案上照射光，在基板上形成包含交联材料的抗蚀剂膜和第一抗蚀剂图案，形成第二抗蚀剂图案，通过在界面处引起交联反应而在第一抗蚀剂图案和抗蚀剂膜之间的界面处形成的连接层，并且对第一抗蚀剂图案照射光，包括设定照射在第一抗蚀剂图案上的光量，使得基于与第一抗蚀剂图案有关的尺寸与第二抗蚀剂图案的尺寸之间的差异以及照射在第一抗蚀剂层上的光量，第二抗蚀剂图案的尺寸为预定尺寸模式。

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