专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08419995B2 Imprint method 有权
标题翻译：印记法
公开(公告)号：US08419995B2
公开(公告)日：2013-04-16
申请号：US12563461
申请日：2009-09-21
申请人： Ikuo Yoneda , Kentaro Matsunaga , Yukiko Kikuchi , Yoshihisa Kawamura , Eishi Shiobara , Shinichi Ito , Tetsuro Nakasugi , Hirokazu Kato
发明人： Ikuo Yoneda , Kentaro Matsunaga , Yukiko Kikuchi , Yoshihisa Kawamura , Eishi Shiobara , Shinichi Ito , Tetsuro Nakasugi , Hirokazu Kato
IPC分类号： B28B11/08 , B29C35/08
CPC分类号： B29C37/0003 , B29C35/0888 , B29C37/006 , B29C59/022 , B29C2035/0822 , B29C2035/0827 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： An imprint method includes applying a light curable resin on a substrate to be processed, the substrate including first and second regions on which the light curable resin is applied, contacting an imprint mold with the light curable resin, curing the light curable resin by irradiating the light curable resin with light passing through the imprint mold, generating gas by performing a predetermined process to the light curable resin applied on a region of the substrate, the region including at least the first region, wherein an amount of gas generated from the light curable resin applied on the first region is larger than an amount of gas generated from the light curable resin of the second region, and forming a pattern by separating the imprint mold from the light curable resin after the gas being generated.
摘要翻译：压印方法包括将光固化树脂施加在待加工的基板上，所述基板包括施加有光固化树脂的第一和第二区域，使印模与光固化树脂接触，通过照射光固化树脂来固化光固化树脂光固化树脂，其光通过压印模具，通过对施加在基板的区域上的光固化树脂进行预定处理产生气体，该区域至少包括第一区域，其中从光可固化施加在第一区域上的树脂大于由第二区域的光固化树脂产生的气体的量，并且在产生气体之后通过从光固化树脂分离压印模具来形成图案。

2. 发明申请

US20100078860A1 IMPRINT METHOD 有权
标题翻译： IMPRINT方法
公开(公告)号：US20100078860A1
公开(公告)日：2010-04-01
申请号：US12563461
申请日：2009-09-21
申请人： Ikuo Yoneda , Kentaro Matsunaga , Yukiko Kikuchi , Yoshihisa Kawamura , Eishi Shiobara , Shinichi Ito , Tetsuro Nakasugi , Hirokazu Kato
发明人： Ikuo Yoneda , Kentaro Matsunaga , Yukiko Kikuchi , Yoshihisa Kawamura , Eishi Shiobara , Shinichi Ito , Tetsuro Nakasugi , Hirokazu Kato
IPC分类号： B29C35/08
CPC分类号： B29C37/0003 , B29C35/0888 , B29C37/006 , B29C59/022 , B29C2035/0822 , B29C2035/0827 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： An imprint method includes applying a light curable resin on a substrate to be processed, the substrate including first and second regions on which the light curable resin is applied, contacting an imprint mold with the light curable resin, curing the light curable resin by irradiating the light curable resin with light passing through the imprint mold, generating gas by performing a predetermined process to the light curable resin applied on a region of the substrate, the region including at least the first region, wherein an amount of gas generated from the light curable resin applied on the first region is larger than an amount of gas generated from the light curable resin of the second region, and forming a pattern by separating the imprint mold from the light curable resin after the gas being generated.
摘要翻译：压印方法包括将光固化树脂施加在待加工的基板上，所述基板包括施加有光固化树脂的第一和第二区域，使印模与光固化树脂接触，通过照射光固化树脂来固化光固化树脂光固化树脂，其光通过压印模具，通过对施加在基板的区域上的光固化树脂进行预定处理产生气体，该区域至少包括第一区域，其中从光可固化施加在第一区域上的树脂大于由第二区域的光固化树脂产生的气体的量，并且在产生气体之后通过从光固化树脂分离压印模具来形成图案。

3. 发明授权

US07779777B2 Substrate processing apparatus and method 失效
标题翻译：基板加工装置及方法
公开(公告)号：US07779777B2
公开(公告)日：2010-08-24
申请号：US12466525
申请日：2009-05-15
申请人： Eishi Shiobara , Hirokazu Kato , Seiro Miyoshi , Shinichi Ito
发明人： Eishi Shiobara , Hirokazu Kato , Seiro Miyoshi , Shinichi Ito
IPC分类号： B05B15/02 , B05B3/00 , B05B1/28 , B05B13/02
CPC分类号： H01L21/67253 , H01L21/67051 , H01L21/6715
摘要： A substrate-processing apparatus includes a sample table which mounts thereon a to-be-processed substrate, a first line which supplies a chemical solution, a second line which supplies a cleaning liquid, a three-way valve connected to the first and second lines and configured to select one of the first and second lines, a filter provided across the first line upstream of the three-way valve, and configured to eliminate a foreign material from the chemical solution, and a nozzle provided downstream of the three-way valve and configured to discharge the chemical solution or the cleaning liquid when the first or second line is selected via the three-way valve. The three-way valve selects the first line when the substrate is coated with the chemical solution, and selects the second line in other cases.
摘要翻译：基板处理装置包括安装在被处理基板上的样品台，供给化学溶液的第一管线，供给清洗液的第二管线，与第一管路和第二管路连接的三通阀并且构造成选择第一和第二管线中的一个，设置在三通阀上游的第一线上的过滤器，并且被配置为从化学溶液中除去异物，以及设置在三通阀下游的喷嘴并且构造成当通过三通阀选择第一或第二管线时，排出化学溶液或清洗液体。当基材涂有化学溶液时，三通阀选择第一行，在其他情况下选择第二行。

4. 发明申请

US20090226624A1 SUBSTRATE PROCESSING APPARATUS AND METHOD 失效
标题翻译：基板加工装置和方法
公开(公告)号：US20090226624A1
公开(公告)日：2009-09-10
申请号：US12466525
申请日：2009-05-15
申请人： Eishi Shiobara , Hirokazu Kato , Seiro Miyoshi , Shinichi Ito
发明人： Eishi Shiobara , Hirokazu Kato , Seiro Miyoshi , Shinichi Ito
IPC分类号： B05D1/02 , B05B7/00 , B05B13/04 , B05C5/00 , B05B15/02
CPC分类号： H01L21/67253 , H01L21/67051 , H01L21/6715
摘要： A substrate-processing apparatus includes a sample table which mounts thereon a to-be-processed substrate, a first line which supplies a chemical solution, a second line which supplies a cleaning liquid, a three-way valve connected to the first and second lines and configured to select one of the first and second lines, a filter provided across the first line upstream of the three-way valve, and configured to eliminate a foreign material from the chemical solution, and a nozzle provided downstream of the three-way valve and configured to discharge the chemical solution or the cleaning liquid when the first or second line is selected via the three-way valve. The three-way valve selects the first line when the substrate is coated with the chemical solution, and selects the second line in other cases.
摘要翻译：基板处理装置包括安装在被处理基板上的样品台，供给化学溶液的第一管线，供给清洗液的第二管线，与第一管路和第二管路连接的三通阀并且构造成选择第一和第二管线中的一个，设置在三通阀上游的第一线上的过滤器，并且被配置为从化学溶液中除去异物，以及设置在三通阀下游的喷嘴并且构造成当通过三通阀选择第一或第二管线时，排出化学溶液或清洗液体。当基材涂有化学溶液时，三通阀选择第一行，在其他情况下选择第二行。

5. 发明申请

US20070266936A1 Substrate processing apparatus and method 审中-公开
标题翻译：基板加工装置及方法
公开(公告)号：US20070266936A1
公开(公告)日：2007-11-22
申请号：US11798132
申请日：2007-05-10
申请人： Eishi Shiobara , Hirokazu Kato , Seiro Miyoshi , Shinichi Ito
发明人： Eishi Shiobara , Hirokazu Kato , Seiro Miyoshi , Shinichi Ito
IPC分类号： B05C11/02
CPC分类号： H01L21/67253 , H01L21/67051 , H01L21/6715
摘要： A substrate-processing apparatus includes a sample table which mounts thereon a to-be-processed substrate, a first line which supplies a chemical solution, a second line which supplies a cleaning liquid, a three-way valve connected to the first and second lines and configured to select one of the first and second lines, a filter provided across the first line upstream of the three-way valve, and configured to eliminate a foreign material from the chemical solution, and a nozzle provided downstream of the three-way valve and configured to discharge the chemical solution or the cleaning liquid when the first or second line is selected via the three-way valve. The three-way valve selects the first line when the substrate is coated with the chemical solution, and selects the second line in other cases.
摘要翻译：基板处理装置包括安装在被处理基板上的样品台，供给化学溶液的第一管线，供给清洗液的第二管线，与第一管路和第二管路连接的三通阀并且构造成选择第一和第二管线中的一个，设置在三通阀上游的第一线上的过滤器，并且被配置为从化学溶液中除去异物，以及设置在三通阀下游的喷嘴并且构造成当通过三通阀选择第一或第二管线时，排出化学溶液或清洗液体。当基材涂有化学溶液时，三通阀选择第一行，在其他情况下选择第二行。

6. 发明授权

US07026099B2 Pattern forming method and method for manufacturing semiconductor device 失效
公开(公告)号：US07026099B2
公开(公告)日：2006-04-11
申请号：US10419921
申请日：2003-04-22
申请人： Hirokazu Kato , Yasunobu Onishi , Eishi Shiobara , Daisuke Kawamura , Hiroko Nakamura
发明人： Hirokazu Kato , Yasunobu Onishi , Eishi Shiobara , Daisuke Kawamura , Hiroko Nakamura
IPC分类号： G03F7/00
CPC分类号： H01L21/0279 , G03F7/0035 , H01L21/0275 , H01L21/0277 , H01L21/0278
摘要： A pattern forming method is disclosed which comprises providing a to-be-processed film on a substrate, providing a resist film on the to-be-processed film, patterning the resist film, providing a film of a radiosensitive compound on the to-be-processed film such that the patterned resist film is covered with the film of the radiosensitive compound, subjecting the film of the radiosensitive compound to irradiation and a development process, thus exposing an upper surface of the resist film and patterning the film of the radiosensitive compound, and removing the resist film and processing the to-be-processed film, using the patterned film of the radiosensitive compound as a mask.

7. 发明授权

US08138059B2 Semiconductor device manufacturing method 失效
标题翻译：半导体器件制造方法
公开(公告)号：US08138059B2
公开(公告)日：2012-03-20
申请号：US12564440
申请日：2009-09-22
申请人： Kentaro Matsunaga , Hirokazu Kato , Tomoya Oori
发明人： Kentaro Matsunaga , Hirokazu Kato , Tomoya Oori
IPC分类号： H01L21/76
CPC分类号： H01L21/0273 , G03F7/40 , H01L21/0337 , H01L21/0338 , H01L21/31144
摘要： A semiconductor device manufacturing method includes: forming a core pattern on a foundation film, the core pattern containing a material generating acid by light exposure; selectively exposing part of the core pattern except an longitudinal end portion; supplying a mask material onto the foundation film so as to cover the core pattern, the mask material being crosslinkable upon supply acid from the core pattern; etching back the mask material to expose an upper surface of the core pattern and remove a portion of the mask material formed on the end portion of the core pattern, thereby leaving a mask material side wall portion formed on a side wall of the core pattern; and removing the core pattern and processing the foundation film by using the mask material sidewall portion left on the foundation film as a mask.
摘要翻译：半导体器件制造方法包括：在基底膜上形成芯图案，所述芯图案含有通过曝光产生酸的材料; 选择性地暴露除了纵向端部之外的芯图案的一部分; 将掩模材料供应到所述基底膜上以覆盖所述芯图案，所述掩模材料在从所述芯图案供给酸时可交联; 蚀刻掩模材料以露出芯图案的上表面并且去除形成在芯图案的端部上的掩模材料的一部分，从而留下形成在芯图案的侧壁上的掩模材料侧壁部分; 并且通过使用留在基底膜上的掩模材料侧壁部分作为掩模去除芯图案和处理基底膜。

8. 发明授权

US07709383B2 Film forming method, and substrate-processing apparatus 失效
标题翻译：成膜方法和基板处理装置
公开(公告)号：US07709383B2
公开(公告)日：2010-05-04
申请号：US11034926
申请日：2005-01-14
申请人： Hirokazu Kato , Tomoyuki Takeishi , Shinichi Ito
发明人： Hirokazu Kato , Tomoyuki Takeishi , Shinichi Ito
IPC分类号： H01L21/20 , H01L21/44
CPC分类号： H01L21/02282 , G03F7/091 , G03F7/094 , G03F7/11 , G03F7/162 , G03F7/168 , H01L21/0274 , H01L21/312
摘要： A film forming method comprising forming a liquid coating film on a substrate by supplying a liquid containing a coating type thin film forming substance and a solvent onto the substrate, substantially converging a variation in film thickness of the coating film, making the coating film stand by in an atmosphere including moisture under a predetermined condition after the substantial-convergence, the predetermined condition being such that a product of a time for which the coating film is exposed to the atmosphere and a water content per unit volume in an atmosphere in the vicinity of a surface of the coating film is made to be greater than or equal to a predetermined value, and forming a solid thin film on the substrate after the stand-by, the thin film being formed by carrying out an elimination of the solvent in the coating film and heat treatment for generating an irreversible reaction to the coating type thin film forming substance in the coating film.
摘要翻译：一种成膜方法，包括在基板上形成液体涂膜，将含有涂膜型薄膜形成物质和溶剂的液体供给到基板上，使涂膜的膜厚变化大致收敛，使涂膜静置在大致收敛之后的预定条件下的包括水分的气氛中，预定条件使得涂膜暴露于大气的时间与在大气附近的气氛中的每单位体积的含水量使涂膜的表面大于或等于预定值，并在待机之后在基板上形成固体薄膜，通过在涂层中除去溶剂而形成薄膜膜和热处理，以在涂膜中产生与涂层型薄膜形成物质不可逆的反应。

9. 发明授权

US07851363B2 Pattern forming method and manufacturing method of semiconductor device 有权
标题翻译：半导体器件的图案形成方法和制造方法
公开(公告)号：US07851363B2
公开(公告)日：2010-12-14
申请号：US11034975
申请日：2005-01-14
申请人： Tomoyuki Takeishi , Hirokazu Kato , Shinichi Ito
发明人： Tomoyuki Takeishi , Hirokazu Kato , Shinichi Ito
IPC分类号： H01L21/311
CPC分类号： G03F7/094 , G03F7/0045 , G03F7/0392 , G03F7/091 , G03F7/11 , G03F7/162 , G03F7/168 , G03F7/20 , G03F7/2006 , G03F7/2022 , G03F7/2041 , G03F7/30 , G03F7/32 , G03F7/38 , H01L21/02052 , H01L21/0276 , H01L21/0332 , H01L21/31144 , H01L21/67023
摘要： A pattern forming method includes forming a spin on dielectric film on a substrate, washing the spin on dielectric film by using a washing liquid, drying a surface of the spin on dielectric film after the washing, forming a photosensitive film on the dried coating type insulation film, emitting energy rays to a predetermined position of the photosensitive film in order to form a latent image on the photosensitive film, developing the photosensitive film in order to form a photosensitive film pattern which corresponds to the latent image, and processing the spin on dielectric film with the photosensitive film pattern serving as a mask.
摘要翻译：图案形成方法包括在基板上形成电介质膜上的自旋，通过使用洗涤液清洗电介质膜上的自旋，洗涤之后干燥电介质膜上的自旋表面，在干燥的涂层型绝缘上形成感光膜膜，将能量射线发射到感光膜的预定位置，以在感光膜上形成潜像，使感光膜显影，以形成对应于潜像的感光膜图案，并处理电介质上的自旋具有感光胶片图案的胶片作为掩模。

10. 发明授权

US08728943B2 Pattern forming method and manufacturing method of semiconductor device 有权
标题翻译：半导体器件的图案形成方法和制造方法
公开(公告)号：US08728943B2
公开(公告)日：2014-05-20
申请号：US12926134
申请日：2010-10-27
申请人： Tomoyuki Takeishi , Hirokazu Kato , Shinichi Ito
发明人： Tomoyuki Takeishi , Hirokazu Kato , Shinichi Ito
IPC分类号： H01L21/311
CPC分类号： G03F7/094 , G03F7/0045 , G03F7/0392 , G03F7/091 , G03F7/11 , G03F7/162 , G03F7/168 , G03F7/20 , G03F7/2006 , G03F7/2022 , G03F7/2041 , G03F7/30 , G03F7/32 , G03F7/38 , H01L21/02052 , H01L21/0276 , H01L21/0332 , H01L21/31144 , H01L21/67023
摘要： A pattern forming method includes forming a spin on dielectric film on a substrate, washing the spin on dielectric film by using a washing liquid, drying a surface of the spin on dielectric film after the washing, forming a photosensitive film on the dried coating type insulation film, emitting energy rays to a predetermined position of the photosensitive film in order to form a latent image on the photosensitive film, developing the photosensitive film in order to form a photosensitive film pattern which corresponds to the latent image, and processing the spin on dielectric film with the photosensitive film pattern serving as a mask.
摘要翻译：图案形成方法包括在基板上形成电介质膜上的自旋，通过使用洗涤液清洗电介质膜上的自旋，洗涤之后干燥电介质膜上的自旋表面，在干燥的涂层型绝缘上形成感光膜膜，将能量射线发射到感光膜的预定位置，以在感光膜上形成潜像，使感光膜显影，以形成对应于潜像的感光膜图案，并处理电介质上的自旋具有感光胶片图案的胶片作为掩模。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式