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1. 发明授权

US07643325B2 Ferroelectric memory and operating method of same 有权
标题翻译：铁电存储器及其操作方法相同
公开(公告)号：US07643325B2
公开(公告)日：2010-01-05
申请号：US11896343
申请日：2007-08-31
申请人： Shingo Hagiwara , Yoshiaki Kaneko , Amane Inoue , Akihito Kumagai , Isao Fukushi
发明人： Shingo Hagiwara , Yoshiaki Kaneko , Amane Inoue , Akihito Kumagai , Isao Fukushi
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , G11C7/1006
摘要： A nonvolatile decision memory unit stores decision data indicating whether data stored in the normal memory cells is true or false. An inversion control circuit sets the inverting signal to a valid level with a predetermined probability. A write circuit writes data having logic which is inverse logic of data to be rewritten to the normal memory cells and writes decision data indicating false to the decision memory unit when the inverting signal indicates a valid level. Since inverse data is rewritten at a predetermined frequency, an imprint is prevented when a read operation is executed repetitively. Moreover, since frequent repeating of reverse polarization of the ferroelectric capacitor due to a rewrite operation is prevented, deterioration of the ferroelectric capacitor due to reverse polarization is minimized. Thus, occurrence of the imprint and deterioration of characteristics in the ferroelectric capacitor is prevented, and the reliability of the ferroelectric memory is improved.
摘要翻译：非易失性判定存储单元存储指示存储在正常存储单元中的数据是真还是假的判定数据。反转控制电路以预定的概率将反相信号设置为有效电平。当反相信号指示有效电平时，写入电路将具有要被重写的数据的反逻辑的逻辑写入正常存储器单元，并将指示为假的判定数据写入判定存储器单元。由于逆数据以预定频率被重写，所以当重复执行读取操作时，防止压印。此外，由于防止了由于重写操作而导致的强电介质电容器的反向极化的频繁重复，使得极性反转引起的铁电电容器的劣化最小化。因此，防止了强电介质电容器的压印的发生和特性的劣化，提高了铁电存储器的可靠性。

2. 发明申请

US20080175034A1 Ferroelectric memory and operating method of same 有权
标题翻译：铁电存储器及其操作方法相同
公开(公告)号：US20080175034A1
公开(公告)日：2008-07-24
申请号：US11896343
申请日：2007-08-31
申请人： Shingo Hagiwara , Yoshiaki Kaneko , Amane Inoue , Akihito Kumagai , Isao Fukushi
发明人： Shingo Hagiwara , Yoshiaki Kaneko , Amane Inoue , Akihito Kumagai , Isao Fukushi
IPC分类号： G11C11/22 , G11C11/24
CPC分类号： G11C11/22 , G11C7/1006
摘要： A nonvolatile decision memory unit stores decision data indicating whether data stored in the normal memory cells is true or false. An inversion control circuit sets the inverting signal to a valid level with a predetermined probability. A write circuit writes data having logic which is inverse logic of data to be rewritten to the normal memory cells and writes decision data indicating false to the decision memory unit when the inverting signal indicates a valid level. Since inverse data is rewritten at a predetermined frequency, an imprint is prevented when a read operation is executed repetitively. Moreover, since frequent repeating of reverse polarization of the ferroelectric capacitor due to a rewrite operation is prevented, deterioration of the ferroelectric capacitor due to reverse polarization is minimized. Thus, occurrence of the imprint and deterioration of characteristics in the ferroelectric capacitor is prevented, and the reliability of the ferroelectric memory is improved.
摘要翻译：非易失性判定存储单元存储指示存储在正常存储单元中的数据是真还是假的判定数据。反转控制电路以预定的概率将反相信号设置为有效电平。当反相信号指示有效电平时，写入电路将具有要被重写的数据的反逻辑的逻辑写入正常存储器单元，并将指示为假的判定数据写入判定存储器单元。由于逆数据以预定频率被重写，所以当重复执行读取操作时，防止压印。此外，由于防止了由于重写操作而导致的强电介质电容器的反向极化的频繁重复，使得极性反转引起的铁电电容器的劣化最小化。因此，防止了强电介质电容器的压印的发生和特性的劣化，提高了铁电存储器的可靠性。

3. 发明授权

US06365443B1 Method of manufacturing a semiconductor device having data pads formed in scribed area 有权
标题翻译：制造具有形成在划刻区域中的数据焊盘的半导体器件的方法
公开(公告)号：US06365443B1
公开(公告)日：2002-04-02
申请号：US09538231
申请日：2000-03-30
申请人： Shingo Hagiwara , Amane Inoue , Eiichi Nagai , Masaji Inami , Tohru Takeshima , Kouichi Noro , Hideaki Suzuki
发明人： Shingo Hagiwara , Amane Inoue , Eiichi Nagai , Masaji Inami , Tohru Takeshima , Kouichi Noro , Hideaki Suzuki
IPC分类号： H01L2182
CPC分类号： H01L27/10 , H01L22/32 , H01L24/06 , H01L27/112 , H01L2224/05554 , H01L2224/4943 , H01L2924/00011 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/04941 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2224/48 , H01L2924/00
摘要： On a semiconductor wafer, there are formed chip areas for storing memory areas, scribe areas for cutting the semiconductor wafer, pads for supplying electric signals from the outside in order to write data into the memory areas, and lead wires for electrically connecting the pads with the memory areas. The pads are formed within the scribe areas. After data has been written into the memory areas through the pads, the semiconductor wafer is cut along the scribe areas, thereby obtaining semiconductor chips. At the time of this cutting, the pads or the lead wires are cut.
摘要翻译：在半导体晶片上形成用于存储存储区域的芯片区域，用于切割半导体晶片的划片区域，用于从外部提供电信号的焊盘，以将数据写入存储区域，以及用于将焊盘电连接的引线与用于内存区域。垫片形成在划线区域内。在通过焊盘将数据写入存储区域之后，沿划刻区域切割半导体晶片，从而获得半导体芯片。在切割时，切割垫或引线。

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