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1. 发明授权

US08895934B2 Microstructure manufacturing method 有权
标题翻译：微结构制造方法
公开(公告)号：US08895934B2
公开(公告)日：2014-11-25
申请号：US12986015
申请日：2011-01-06
申请人： Shinan Wang , Takashi Nakamura , Takayuki Teshima , Yutaka Setomoto , Shinichiro Watanabe
发明人： Shinan Wang , Takashi Nakamura , Takayuki Teshima , Yutaka Setomoto , Shinichiro Watanabe
IPC分类号： B81C1/00 , G01T1/29
CPC分类号： G21K1/06 , B81C1/00619 , G01N23/20075 , G01T1/295 , H01L21/31111 , H01L21/32051
摘要： A microstructure manufacturing method includes forming a first insulating film on an Si substrate, exposing an Si surface by removing a part of the first insulating film, forming a recessed portion by etching the Si substrate from the exposed Si surface, forming a second insulating film on a sidewall and a bottom of the recessed portion, forming an Si exposed surface by removing at least a part of the second insulating film formed on the bottom of the recessed portion, and filling the recessed portion with a metal from the Si exposed surface by electrolytic plating.
摘要翻译：微结构制造方法包括在Si衬底上形成第一绝缘膜，通过去除第一绝缘膜的一部分暴露出Si表面，通过从暴露的Si表面蚀刻Si衬底形成凹陷部分，形成第二绝缘膜所述凹部的侧壁和底部通过去除形成在所述凹部的底部上的所述第二绝缘膜的至少一部分而形成Si暴露表面，并且通过电解从所述Si暴露表面向所述凹部填充所述凹部电镀。

2. 发明申请

US20110168908A1 MICROSTRUCTURE MANUFACTURING METHOD 有权
标题翻译：微结构制造方法
公开(公告)号：US20110168908A1
公开(公告)日：2011-07-14
申请号：US12986015
申请日：2011-01-06
申请人： Shinan Wang , Takashi Nakamura , Takayuki Teshima , Yutaka Setomoto , Shinichiro Watanabe
发明人： Shinan Wang , Takashi Nakamura , Takayuki Teshima , Yutaka Setomoto , Shinichiro Watanabe
IPC分类号： G01T1/24 , H01L21/3205 , H01L29/06
CPC分类号： G21K1/06 , B81C1/00619 , G01N23/20075 , G01T1/295 , H01L21/31111 , H01L21/32051
摘要： A microstructure manufacturing method includes forming a first insulating film on an Si substrate, exposing an Si surface by removing a part of the first insulating film, forming a recessed portion by etching the Si substrate from the exposed Si surface, forming a second insulating film on a sidewall and a bottom of the recessed portion, forming an Si exposed surface by removing at least a part of the second insulating film formed on the bottom of the recessed portion, and filling the recessed portion with a metal from the Si exposed surface by electrolytic plating.
摘要翻译：微结构制造方法包括在Si衬底上形成第一绝缘膜，通过去除第一绝缘膜的一部分暴露出Si表面，通过从暴露的Si表面蚀刻Si衬底形成凹陷部分，形成第二绝缘膜所述凹部的侧壁和底部通过去除形成在所述凹部的底部上的所述第二绝缘膜的至少一部分而形成Si暴露表面，并且通过电解从所述Si暴露表面向所述凹部填充所述凹部电镀。

3. 发明申请

US20110194673A1 MICROSTRUCTURE MANUFACTURING METHOD AND MICROSTRUCTURE 有权
标题翻译：微结构制造方法和微结构
公开(公告)号：US20110194673A1
公开(公告)日：2011-08-11
申请号：US13023454
申请日：2011-02-08
申请人： Takayuki Teshima , Shinan Wang , Yutaka Setomoto , Takashi Nakamura
发明人： Takayuki Teshima , Shinan Wang , Yutaka Setomoto , Takashi Nakamura
IPC分类号： G01N23/04 , B05D5/06 , B29D11/00 , B32B3/10 , B32B15/01
CPC分类号： G21K1/06 , C23C18/1612 , C23C18/1651 , C23C18/1653 , C23C18/1692 , C23C18/1851 , C23C18/1868 , C25D5/02 , C25D5/022 , C25D5/10 , C25D5/12 , C25D5/50 , C25D7/123 , G02B5/1838 , G02B5/1857 , G02B5/1866 , G21K2207/005 , Y10T428/12396
摘要： A microstructure manufacturing method includes: preparing a mold having on a front side thereof a plurality of fine structures, with conductivity being imparted to a bottom portion between the plurality of fine structures; forming a first plating layer between the plurality of fine structures by plating the bottom portion; and forming a second plating layer of larger stress than the first plating layer on the first plating layer between the plurality of fine structures, wherein the stress of the second plating layer is used to curve a back side surface of the mold.
摘要翻译：微结构制造方法包括：制备在其前侧具有多个精细结构的模具，其导电性被施加到所述多个精细结构之间的底部; 通过电镀底部在多个精细结构之间形成第一镀层; 并且形成比所述多个微细结构之间的所述第一镀层上的第一镀层大的应力的第二镀层，其中所述第二镀层的应力用于弯曲所述模具的背面。

4. 发明授权

US08908274B2 Microstructure manufacturing method and microstructure 有权
标题翻译：微结构制造方法和微观结构
公开(公告)号：US08908274B2
公开(公告)日：2014-12-09
申请号：US13023454
申请日：2011-02-08
申请人： Takayuki Teshima , Shinan Wang , Yutaka Setomoto , Takashi Nakamura
发明人： Takayuki Teshima , Shinan Wang , Yutaka Setomoto , Takashi Nakamura
IPC分类号： G02B5/18 , C23C18/16 , C23C18/18 , C25D5/10 , C25D5/12 , C25D5/50 , G21K1/06 , C25D7/12 , C25D5/02
CPC分类号： G21K1/06 , C23C18/1612 , C23C18/1651 , C23C18/1653 , C23C18/1692 , C23C18/1851 , C23C18/1868 , C25D5/02 , C25D5/022 , C25D5/10 , C25D5/12 , C25D5/50 , C25D7/123 , G02B5/1838 , G02B5/1857 , G02B5/1866 , G21K2207/005 , Y10T428/12396
摘要： A microstructure manufacturing method includes: preparing a mold having on a front side thereof a plurality of fine structures, with conductivity being imparted to a bottom portion between the plurality of fine structures; forming a first plating layer between the plurality of fine structures by plating the bottom portion; and forming a second plating layer of larger stress than the first plating layer on the first plating layer between the plurality of fine structures, wherein the stress of the second plating layer is used to curve a back side surface of the mold.
摘要翻译：微结构制造方法包括：制备在其前侧具有多个精细结构的模具，其导电性被施加到所述多个精细结构之间的底部; 通过电镀底部在多个精细结构之间形成第一镀层; 并且形成比所述多个微细结构之间的所述第一镀层上的第一镀层大的应力的第二镀层，其中所述第二镀层的应力用于弯曲所述模具的背面。

5. 发明申请

US20140211920A1 STRUCTURE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：其制造方法及其制造方法
公开(公告)号：US20140211920A1
公开(公告)日：2014-07-31
申请号：US14342756
申请日：2012-08-07
申请人： Yutaka Setomoto , Takayuki Teshima
发明人： Yutaka Setomoto , Takayuki Teshima
IPC分类号： G01N23/20 , C25D1/00
CPC分类号： G01N23/20 , A61B6/484 , B81B3/0008 , B81C1/00952 , C25D1/00 , G03F7/00 , G21K1/025 , G21K2207/005
摘要： A method for manufacturing a structure by using a silicon mold, in which disturbances in arrangement due to charges are reduced, can be provided.The method for manufacturing a structure includes the steps of forming a recessed portion in a silicon substrate, cleaning, drying, or conveying the silicon substrate while charges of a plurality of portions sandwiched between the recessed portion are removed, and filling a metal into the recessed portion of the silicon substrate subjected to the cleaning, drying, or conveying.
摘要翻译：可以提供通过使用其中减少由于电荷引起的布置的干扰的硅模制造结构的方法。制造结构的方法包括以下步骤：在硅衬底中形成凹陷部分，清洁，干燥或输送硅衬底，同时去除夹在凹部之间的多个部分的电荷，并将金属填充到凹陷经过清洗，干燥或输送的硅衬底部分。

6. 发明授权

US09040227B2 Microstructure manufacturing method 有权
标题翻译：微结构制造方法
公开(公告)号：US09040227B2
公开(公告)日：2015-05-26
申请号：US13399651
申请日：2012-02-17
申请人： Takayuki Teshima , Yutaka Setomoto
发明人： Takayuki Teshima , Yutaka Setomoto
IPC分类号： G03F1/58 , C25D5/12 , G02B5/18
CPC分类号： C25D5/12 , A61B6/4233 , A61B6/4291 , A61B6/484 , C23C18/1605 , C23C18/1651 , C25D3/12 , C25D3/38 , C25D3/48 , C25D5/022 , C25D5/10 , C25D7/123 , G02B5/18 , G03F7/40 , G21K1/10 , G21K2207/005
摘要： A microstructure manufacturing method includes forming a layer of a photosensitive resin on a substrate surface having an electrical conductivity, forming a structure of the photosensitive resin by exposing the layer of the photosensitive resin to light and developing the layer of the photosensitive resin to expose a part of the substrate surface, forming a first plated layer on the exposed part of the substrate surface by soaking the structure of the photosensitive resin in a first plating solution, curing the structure of the photosensitive resin after forming the first plated layer, removing at least part of the first plated layer after curing the structure of the photosensitive resin, and forming a second plated layer on a part where the first plated layer is removed, by soaking the structure of the photosensitive resin in a second plating solution different from the first plating solution.
摘要翻译：微结构制造方法包括在具有导电性的基板表面上形成感光性树脂层，通过将感光性树脂层曝光并使感光性树脂的层露出而使形成感光性树脂的结构而露出部分通过将感光性树脂的结构浸渍在第一镀液中而在基板表面的露出部分上形成第一镀层，在形成第一镀层之后固化感光性树脂的结构，除去至少一部分固化感光性树脂的结构后的第一镀层，在除去第一镀层的部分上形成第二镀层，将感光性树脂的结构浸渍在与第一镀液不同的第二镀液中。

7. 发明申请

US20120219916A1 MICROSTRUCTURE MANUFACTURING METHOD 有权
标题翻译：微结构制造方法
公开(公告)号：US20120219916A1
公开(公告)日：2012-08-30
申请号：US13399651
申请日：2012-02-17
申请人： Takayuki Teshima , Yutaka Setomoto
发明人： Takayuki Teshima , Yutaka Setomoto
IPC分类号： G03F7/20
CPC分类号： C25D5/12 , A61B6/4233 , A61B6/4291 , A61B6/484 , C23C18/1605 , C23C18/1651 , C25D3/12 , C25D3/38 , C25D3/48 , C25D5/022 , C25D5/10 , C25D7/123 , G02B5/18 , G03F7/40 , G21K1/10 , G21K2207/005
摘要： A microstructure manufacturing method includes forming a layer of a photosensitive resin on a substrate surface having an electrical conductivity, forming a structure of the photosensitive resin by exposing the layer of the photosensitive resin to light and developing the layer of the photosensitive resin to expose a part of the substrate surface, forming a first plated layer on the exposed part of the substrate surface by soaking the structure of the photosensitive resin in a first plating solution, curing the structure of the photosensitive resin after forming the first plated layer, removing at least part of the first plated layer after curing the structure of the photosensitive resin, and forming a second plated layer on a part where the first plated layer is removed, by soaking the structure of the photosensitive resin in a second plating solution different from the first plating solution.
摘要翻译：微结构制造方法包括在具有导电性的基板表面上形成感光性树脂层，通过将感光性树脂层曝光并使感光性树脂的层露出而使形成感光性树脂的结构而露出部分通过将感光性树脂的结构浸渍在第一镀液中而在基板表面的露出部分上形成第一镀层，在形成第一镀层之后固化感光性树脂的结构，除去至少一部分固化感光性树脂的结构后的第一镀层，在除去第一镀层的部分上形成第二镀层，将感光性树脂的结构浸渍在与第一镀液不同的第二镀液中。

8. 发明授权

US09891327B2 Structure, method for manufacturing the same, and image pickup apparatus including the structure 有权
公开(公告)号：US09891327B2
公开(公告)日：2018-02-13
申请号：US14235002
申请日：2012-07-11
申请人： Takayuki Teshima , Yutaka Setomoto
发明人： Takayuki Teshima , Yutaka Setomoto
IPC分类号： G21K1/06 , G01T1/16 , C23C28/00
CPC分类号： G01T1/16 , C23C28/32 , G21K1/06 , G21K2201/067
摘要： The present invention relates to a method for manufacturing a structure, including the steps of forming a recessed section in a first surface of a substrate; filling the recessed section with metal to form a metal structure; exposing the metal structure from the substrate; and applying resin onto the exposed metal structure and solidifying the resin to form a resin layer.

9. 发明申请

US20120207275A1 STRUCTURE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS 有权
标题翻译：结构，制造方法和成像装置
公开(公告)号：US20120207275A1
公开(公告)日：2012-08-16
申请号：US13372105
申请日：2012-02-13
申请人： Takayuki Teshima , Yutaka Setomoto
发明人： Takayuki Teshima , Yutaka Setomoto
IPC分类号： G21K1/06 , C25D5/02 , G01N23/04
CPC分类号： C25D7/00 , C25D5/022 , G21K1/06 , G21K2207/005
摘要： A method of manufacturing a structure includes a step of preparing a substrate including a silicon section, recessed sections and protruding sections formed by etching the silicon section, and a first insulating layer disposed on top portions of the protruding sections; a step of forming second insulating layers on sidewalls and bottom portions of the recessed sections; a step of forming seed layers containing metal above the bottom portions of the recessed sections; and a step of forming plating layers in such a manner that the recessed sections are filled with metal by electroplating. The second insulating layers contain an organopolysiloxane having at least one of a partial structure represented by the following formula (1) and a partial structure represented by the following formula (2): where R1, R2, and R3 represent alkyl groups identical to or different from each other.
摘要翻译：制造结构的方法包括：准备包括硅部分的基板的步骤，凹部和通过蚀刻硅部分形成的突出部分，以及设置在突出部分的顶部上的第一绝缘层; 在凹部的侧壁和底部形成第二绝缘层的工序; 在凹部的底部的上方形成含有金属的种子层的工序; 以及以这样的方式形成镀层的步骤：通过电镀使凹陷部分被金属填充。第二绝缘层包含具有由下式（1）表示的部分结构和由下式（2）表示的部分结构中的至少一种的有机聚硅氧烷：其中R 1，R 2和R 3表示与或不同的从彼此。

10. 发明授权

US08767914B2 Structure, method of manufacturing the same, and imaging apparatus 有权
标题翻译：结构，制造方法和成像装置
公开(公告)号：US08767914B2
公开(公告)日：2014-07-01
申请号：US13372105
申请日：2012-02-13
申请人： Takayuki Teshima , Yutaka Setomoto
发明人： Takayuki Teshima , Yutaka Setomoto
IPC分类号： A61B6/00
CPC分类号： C25D7/00 , C25D5/022 , G21K1/06 , G21K2207/005
摘要： A method of manufacturing a structure includes a step of preparing a substrate including a silicon section, recessed sections and protruding sections formed by etching the silicon section, and a first insulating layer disposed on top portions of the protruding sections; a step of forming second insulating layers on sidewalls and bottom portions of the recessed sections; a step of forming seed layers containing metal above the bottom portions of the recessed sections; and a step of forming plating layers in such a manner that the recessed sections are filled with metal by electroplating. The second insulating layers contain an organopolysiloxane having at least one of a partial structure represented by the following formula (1) and a partial structure represented by the following formula (2): where R1, R2, and R3 represent alkyl groups identical to or different from each other.
摘要翻译：制造结构的方法包括：准备包括硅部分的基板的步骤，凹部和通过蚀刻硅部分形成的突出部分，以及设置在突出部分的顶部上的第一绝缘层; 在凹部的侧壁和底部形成第二绝缘层的工序; 在凹部的底部的上方形成含有金属的种子层的工序; 以及以这样的方式形成镀层的步骤：通过电镀使凹陷部分被金属填充。第二绝缘层包含具有由下式（1）表示的部分结构和由下式（2）表示的部分结构中的至少一种的有机聚硅氧烷：其中R 1，R 2和R 3表示与或不同的从彼此。

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