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1. 发明授权

US07377026B2 Method of making current-perpendicular-to-the-plane structure magnetoresistive element 失效
标题翻译：制造电流垂直于平面结构的磁阻元件的方法
公开(公告)号：US07377026B2
公开(公告)日：2008-05-27
申请号：US11431757
申请日：2006-05-10
申请人： Shin Eguchi , Chikayoshi Kamata , Junya Ikeda , Atsushi Tanaka
发明人： Shin Eguchi , Chikayoshi Kamata , Junya Ikeda , Atsushi Tanaka
IPC分类号： G11B5/187
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/012 , G11B5/3903 , H01F10/3254 , H01L43/12 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： A magnetoresistive film is formed on the surface of a lower electrode layer in a method of making a current-perpendicular-to-the-plane structure magnetoresistive element. The magnetoresistive film includes a lower portion and an upper portion overlaid on the lower portion. The lower portion includes at least a pinned magnetic layer. The upper portion includes at least a free magnetic layer. A pair of domain control magnetic layers is formed to sandwich the magnetoresistive film. An insulator film is formed to cover over the domain control magnetic layers. The upper portion is subjected to an etching process. The domain control magnetic layers are reliably prevented from being removed during the etching process. Accordingly, the domain control magnetic layers are allowed to reliably sandwich the upper portion of the magnetoresistive film in the aforementioned manner.
摘要翻译：在制造电流 - 垂直于平面结构的磁阻元件的方法中，在下电极层的表面上形成磁阻膜。磁阻膜包括下部和覆盖在下部上的上部。下部包括至少一个钉扎的磁性层。上部包括至少一个自由磁性层。形成一对区域控制磁性层以夹持磁阻膜。形成绝缘膜以覆盖域控制磁性层上。对上部进行蚀刻处理。在蚀刻处理期间可靠地防止畴控制磁性层被去除。因此，允许域控制磁性层以上述方式可靠地夹住磁阻膜的上部。

2. 发明申请

US20060191130A1 Current-perpendicular-to-the-plane structure magnetoresistive element and method of making same 失效
公开(公告)号：US20060191130A1
公开(公告)日：2006-08-31
申请号：US11431757
申请日：2006-05-10
申请人： Shin Eguchi , Chikayoshi Kamata , Junya Ikeda , Atsushi Tanaka
发明人： Shin Eguchi , Chikayoshi Kamata , Junya Ikeda , Atsushi Tanaka
IPC分类号： G11B5/127
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/012 , G11B5/3903 , H01F10/3254 , H01L43/12 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： The upper portion of a magnetoresistive film is interposed between insulators in the lateral direction of a recording track in a current-perpendicular-to-the-plane structure magnetoresistive element. Domain control magnetic layers sandwich the upper portion of the magnetoresistive film along with the insulators in the lateral direction. The insulators serve to establish a narrower path for electric current between the lower portion of the magnetoresistive film and an upper electrode layer. The substantial width in the lateral direction can thus be reduced in the magnetoresistive film. In addition, a longitudinal biasing magnetic field established between the domain control magnetic layers efficiently acts on the magnetoresistive film. In particular, if a free magnetic layer is included in the upper portion of the magnetoresistive film, the free magnetic layer can be subjected to a larger longitudinal biasing magnetic field. A single domain property can be realized in the free ferromagnetic layer enough. The Barkhausen noise can be reduced.

3. 发明授权

US07092223B2 Current-perpendicular-to-the-plane structure magnetoresistive element and method of making same 失效
公开(公告)号：US07092223B2
公开(公告)日：2006-08-15
申请号：US10027651
申请日：2001-12-20
申请人： Shin Eguchi , Chikayoshi Kamata , Junya Ikeda , Atsushi Tanaka
发明人： Shin Eguchi , Chikayoshi Kamata , Junya Ikeda , Atsushi Tanaka
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/012 , G11B5/3903 , H01F10/3254 , H01L43/12 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： The upper portion of a magnetoresistive film is interposed between insulators in the lateral direction of a recording track in a current-perpendicular-to-the-plane structure magnetoresistive element. Domain control magnetic layers sandwich the upper portion of the magnetoresistive film along with the insulators in the lateral direction. The insulators serve to establish a narrower path for electric current between the lower portion of the magnetoresistive film and an upper electrode layer. The substantial width in the lateral direction can thus be reduced in the magnetoresistive film. In addition, a longitudinal biasing magnetic field established between the domain control magnetic layers efficiently acts on the magnetoresistive film. In particular, if a free magnetic layer is included in the upper portion of the magnetoresistive film, the free magnetic layer can be subjected to a larger longitudinal biasing magnetic field. A single domain property can be realized in the free ferromagnetic layer enough. The Barkhausen noise can be reduced.

4. 发明授权

US06995960B2 Spin valve magnetoresistive sensor having CPP structure 失效
公开(公告)号：US06995960B2
公开(公告)日：2006-02-07
申请号：US09820047
申请日：2001-03-28
申请人： Yoshihiko Seyama , Atsushi Tanaka , Keiichi Nagasaka , Yutaka Shimizu , Shin Eguchi , Hitoshi Kanai , Reiko Kondo , Hitoshi Kishi , Junya Ikeda
发明人： Yoshihiko Seyama , Atsushi Tanaka , Keiichi Nagasaka , Yutaka Shimizu , Shin Eguchi , Hitoshi Kanai , Reiko Kondo , Hitoshi Kishi , Junya Ikeda
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , H01F10/3259 , H01F10/3268 , H01F10/3295
摘要： Disclosed herein is a spin valve magnetoresistive sensor including a first conductor layer, a free ferromagnetic layer provided on the first conductor layer, a nonmagnetic intermediate layer provided on the free ferromagnetic layer, a pinned ferromagnetic layer provided on the nonmagnetic intermediate layer, an antiferromagnetic layer provided on the pinned ferromagnetic layer, and a second conductor layer provided on the antiferromagnetic layer. At least one of the free ferromagnetic layer and the pinned ferromagnetic layer has a thickness larger than that providing a maximum resistance change rate or resistance change amount in the case of passing a current in an in-plane direction of the at least one layer. That is, the thickness of at least one of the free ferromagnetic layer and the pinned ferromagnetic layer falls in the range of 3 nm to 12 nm.

5. 发明申请

US20060119989A1 SPIN VALVE MAGNETORESISTIVE SENSOR HAVING CPP STRUCTURE 失效
标题翻译：具有CPP结构的旋转阀磁传感器
公开(公告)号：US20060119989A1
公开(公告)日：2006-06-08
申请号：US11327676
申请日：2006-01-06
申请人： Yoshihiko Seyama , Atsushi Tanaka , Keiichi Nagasaka , Yutaka Shimizu , Shin Eguchi , Hitoshi Kanai , Reiko Kondo , Hitoshi Kishi , Junya Ikeda
发明人： Yoshihiko Seyama , Atsushi Tanaka , Keiichi Nagasaka , Yutaka Shimizu , Shin Eguchi , Hitoshi Kanai , Reiko Kondo , Hitoshi Kishi , Junya Ikeda
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , H01F10/3259 , H01F10/3268 , H01F10/3295
摘要： Disclosed herein is a spin valve magnetoresistive sensor including a first conductor layer, a free ferromagnetic layer provided on the first conductor layer, a nonmagnetic intermediate layer provided on the free ferromagnetic layer, a pinned ferromagnetic layer provided on the nonmagnetic intermediate layer, an antiferromagnetic layer provided on the pinned ferromagnetic layer, and a second conductor layer provided on the antiferromagnetic layer. At least one of the free ferromagnetic layer and the pinned ferromagnetic layer has a thickness larger than that providing a maximum resistance change rate or resistance change amount in the case of passing a current in an in-plane direction of the at least one layer. That is, the thickness of at least one of the free ferromagnetic layer and the pinned ferromagnetic layer falls in the range of 3 nm to 12 nm.
摘要翻译：本文公开了一种自旋阀磁阻传感器，其包括第一导体层，设置在第一导体层上的自由铁磁层，设置在自由铁磁层上的非磁性中间层，设置在非磁性中间层上的钉扎铁磁层，反铁磁层设置在被钉扎的铁磁层上，以及设置在反铁磁层上的第二导体层。自由铁磁层和被钉扎的铁磁层中的至少一个具有大于在通过至少一个层的面内方向的电流的情况下提供最大电阻变化率或电阻变化量的厚度的厚度。也就是说，自由铁磁层和被钉扎铁磁层中的至少一个的厚度落在3nm至12nm的范围内。

6. 发明授权

US07116533B2 Magnetoresistive sensor 失效
标题翻译：磁阻传感器
公开(公告)号：US07116533B2
公开(公告)日：2006-10-03
申请号：US11327676
申请日：2006-01-06
申请人： Yoshihiko Seyama , Atsushi Tanaka , Keiichi Nagasaka , Yutaka Shimizu , Shin Eguchi , Hitoshi Kanai , Reiko Kondo , Hitoshi Kishi , Junya Ikeda
发明人： Yoshihiko Seyama , Atsushi Tanaka , Keiichi Nagasaka , Yutaka Shimizu , Shin Eguchi , Hitoshi Kanai , Reiko Kondo , Hitoshi Kishi , Junya Ikeda
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , H01F10/3259 , H01F10/3268 , H01F10/3295
摘要： A magnetoresistive sensor including the following layers, in order: a first conductor layer; a first antiferromagnetic layer; a first pinned ferromagnetic layer; a first nonmagnetic intermediate layer; a free ferromagnetic layer; a second nonmagnetic intermediate layer; a second pinned ferromagnetic layer; a second antiferromagnetic layer; and a second conductor layer. Alternatively, the magnetoresistive sensor may include the following layers, in order: a first conductor layer; a first free ferromagnetic layer; a first nonmagnetic intermediate layer; a first pinned ferromagnetic layer; an antiferromagnetic layer; a second pinned ferromagnetic layer; a second nonmagnetic intermediate layer; a second free ferromagnetic layer; and a second conductor layer.
摘要翻译：一种磁阻传感器，包括以下层：第一导体层; 第一反铁磁层; 第一固定铁磁层; 第一非磁性中间层; 自由铁磁层; 第二非磁性中间层; 第二钉扎铁磁层; 第二反铁磁层; 和第二导体层。或者，磁阻传感器可以依次包括以下层：第一导体层; 第一自由铁磁层; 第一非磁性中间层; 第一固定铁磁层; 反铁磁层; 第二钉扎铁磁层; 第二非磁性中间层; 第二自由铁磁层; 和第二导体层。

7. 发明申请

US20110190278A1 BICYCLIC HETEROCYCLIC DERIVATIVE 失效
标题翻译：双相异位衍生物
公开(公告)号：US20110190278A1
公开(公告)日：2011-08-04
申请号：US12809489
申请日：2008-12-19
申请人： Hiroyuki Nakahira , Yohei Ikuma , Nobuhisa Fukuda , Kozo Yoshida , Hidenori Kimura , Satoshi Suetsugu , Akira Fusano , Kiyoto Sawamura , Junya Ikeda , Yoshio Nakai
发明人： Hiroyuki Nakahira , Yohei Ikuma , Nobuhisa Fukuda , Kozo Yoshida , Hidenori Kimura , Satoshi Suetsugu , Akira Fusano , Kiyoto Sawamura , Junya Ikeda , Yoshio Nakai
IPC分类号： A61K31/5415 , C07D413/12 , A61K31/538 , C07D413/14 , C07D401/12 , A61K31/454 , A61K31/4709 , C07D417/12 , A61K31/547 , A61P9/12
CPC分类号： C07D401/12 , C07D413/12 , C07D413/14 , C07D417/12 , C07D498/10
摘要： The present invention relates to a compound of the following formula (I) or a pharmaceutically acceptable salt thereof, being useful as a renin inhibitor. [wherein R1a is halogen, etc.; R1m is H, etc.; G1 is —N(R1b)—, etc.; G2 is —CO—, etc.; G3 is —C(R1c)(R1d)—, etc.; G4 is oxygen, etc.; R1b is optionally substituted C1-6 alkyl, etc.; R1c and R1d are independently the same or different, H, etc.; R3 is H, optionally substituted C1-6 alkyl, etc.; R3a, R3b, R3c and R3d are independently the same or different, and a group: -A-B (said A is single bond, etc., and said B is H, etc.), etc.; and n is 1, etc.]
摘要翻译：本发明涉及用作肾素抑制剂的下式（I）化合物或其药学上可接受的盐。 [其中R1a是卤素等; R1m为H等; G1是-N（R1b） - 等; G2是-CO-等; G3是-C（R1c）（R1d） - 等; G4是氧气等; R 1b是任选取代的C 1-6烷基等; R1c和R1d独立地相同或不同，H等; R3是H，任选取代的C 1-6烷基等; R3a，R3b，R3c和R3d独立地相同或不同，组：-A-B（所述A为单键等，所述B为H等）等; n为1等]

8. 发明申请

US20110039848A1 FIVE-MEMBERED RING COMPOUND 审中-公开
标题翻译：五元环化合物
公开(公告)号：US20110039848A1
公开(公告)日：2011-02-17
申请号：US12989530
申请日：2009-04-23
申请人： Hitoshi Fujita , Junya Ikeda , Satoki Imai
发明人： Hitoshi Fujita , Junya Ikeda , Satoki Imai
IPC分类号： A61K31/5377 , C07D413/14 , C07D417/04 , A61K31/501 , A61P29/00 , A61P37/08 , A61P11/00 , A61P11/06
CPC分类号： C07D417/04 , C07D417/14
摘要： Provided are: a five-membered ring compound represented by formula (1) or a pharmaceutically acceptable salt thereof; and a medicine containing the compound or salt. The compound or salt inhibits the infiltration of leukocytes such as eosinophils and lymphocytes, is effective as a therapeutic agent for various kinds of inflammation, and is so safe that the compound or salt can be taken for long. In formula (1), R1 is (substituted) phenyl or pyridyl; R2 is (substituted) pyrazinediyl, pyrimidinediyl, or pyridazinediyl; R3 to R5 each is alkyl (provided that —N(R4)R5 may be morpholino); and Y2 is alkylene.
摘要翻译：提供：由式（1）表示的五元环化合物或其药学上可接受的盐; 和含有该化合物或盐的药物。化合物或盐抑制白细胞如嗜酸性粒细胞和淋巴细胞的浸润，作为各种炎症的治疗剂是有效的，并且使得化合物或盐可以长时间服用是安全的。在式（1）中，R 1是（取代的）苯基或吡啶基; R2是（取代的）吡嗪二基，嘧啶二基或哒嗪二基; R 3至R 5各自为烷基（条件是-N（R 4）R 5可以是吗啉代）; 而Y2是亚烷基。

9. 发明授权

US06731475B2 Current-perpendicular-to-the-plane structure electromagnetic transducer element having reduced path for electric current 失效
标题翻译：具有减小的电流路径的电流 - 垂直于平面结构的电磁换能器元件
公开(公告)号：US06731475B2
公开(公告)日：2004-05-04
申请号：US09951102
申请日：2001-09-12
申请人： Junya Ikeda
发明人： Junya Ikeda
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996 , Y10T29/49046
摘要： A current-perpendicular-to-the-plane (CPP) structure electromagnetic transducer element comprises upper and lower electrically-conductive lead layers. The lead layers are employed to supply an electric current to an electromagnetic transducer film. An electrically-conductive terminal piece is allowed to stand on the surface of the lower electrically-conductive lead layer. The contact established between the electrically-conductive terminal piece and the electromagnetic transducer film is allowed to define the path for the electric current. The reduced contact area of the electrically-conductive terminal piece contributes to reduction in the size or extent of the path for the electric current through the electromagnetic transducer film. The path of the electric current can be reduced in the CPP structure electromagnetic transducer element without relying on reduction in the size of the electromagnetic transducer film.
摘要翻译：电流垂直于平面（CPP）结构的电磁换能器元件包括上和下导电引线层。引线层用于向电磁换能器膜提供电流。允许导电端子件站在下部导电引线层的表面上。在导电端子片和电磁换能器膜之间建立的接触允许限定电流的路径。导电端子片的减小的接触面积有助于减小通过电磁换能器膜的电流的路径的尺寸或程度。可以在CPP结构电磁换能器元件中减小电流的路径，而不依赖于电磁换能器膜的尺寸的减小。

10. 发明申请

US20140057895A1 INDAZOLE- AND PYRROLOPYRIDINE-DERIVATIVE AND PHARMACEUTICAL USE THEREOF 审中-公开
标题翻译：吲哚和吡咯并吡啶衍生物及其药物用途
公开(公告)号：US20140057895A1
公开(公告)日：2014-02-27
申请号：US14005659
申请日：2012-06-06
申请人： Kazuhiro Mizuno , Junya Ikeda , Takanori Nakamura , Masato Iwata , Hiromichi Otaka , Nana Goto
发明人： Kazuhiro Mizuno , Junya Ikeda , Takanori Nakamura , Masato Iwata , Hiromichi Otaka , Nana Goto
IPC分类号： C07D471/04 , C07D413/04 , C07D417/14 , C07D413/14
CPC分类号： C07D471/04 , C07D413/04 , C07D413/14 , C07D417/04 , C07D417/14 , C07D471/08
摘要： The present invention relates to a novel indazole- or pyrrolopyridine-derivative comprising a 5 membered heterocyclic substituent at 1 position thereof which has an agonistic action or a partial agonistic action against serotonin-4 receptor, and a pharmaceutical composition comprising the same.
摘要翻译：本发明涉及一种新颖的吲唑或吡咯并吡啶衍生物及其1位的5元杂环取代基，其具有针对5-羟色胺-4受体的激动作用或部分激动作用，以及包含其的药物组合物。

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