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1. 发明授权

US08120140B2 Isolation structure and formation method thereof 有权
公开(公告)号：US08120140B2
公开(公告)日：2012-02-21
申请号：US12470587
申请日：2009-05-22
申请人： Ming-Tsung Wu , Shih-Ping Hong , Chun-Min Cheng , Yu-Chung Chen , Han-Hui Hsu
发明人： Ming-Tsung Wu , Shih-Ping Hong , Chun-Min Cheng , Yu-Chung Chen , Han-Hui Hsu
IPC分类号： H01L21/70
CPC分类号： H01L21/76232 , H01L21/3086 , H01L21/76229 , H01L27/105
摘要： An isolation structure comprising a substrate is provided. A trench is in the substrate. A sidewall of the trench has a first inclined surface and a second inclined surface. The first inclined surface is located on the second inclined surface. The slope of the first inclined surface is different from the slope of the second inclined surface. A length of the first inclined surface is greater than 15 nanometers.

2. 发明申请

US20090286364A1 METHODS OF LOW TEMPERATURE OXIDATION 有权
标题翻译：低温氧化法
公开(公告)号：US20090286364A1
公开(公告)日：2009-11-19
申请号：US12121382
申请日：2008-05-15
申请人： Shih-Ping Hong , Han-Hui Hsu
发明人： Shih-Ping Hong , Han-Hui Hsu
IPC分类号： H01L21/28 , H01L21/336
CPC分类号： H01L21/28211 , C23C8/36 , H01J37/321 , H01L29/51 , H01L29/78
摘要： A method for forming a dielectric is provided. The method includes providing a substrate having a silicon-containing semiconductor layer within a process chamber. The process chamber is capable of ionizing a process precursor to a plasma comprising an oxygen-containing element and a fluorocarbon-containing element. A surface portion of the silicon-containing material is oxidized by using the plasma to convert the surface portion into an oxidized dielectric material.
摘要翻译：提供了形成电介质的方法。该方法包括在处理室内提供具有含硅半导体层的衬底。处理室能够将工艺前体电离到包含含氧元素和含氟烃元素的等离子体中。通过使用等离子体将含硅材料的表面部分氧化，将表面部分转化为氧化的电介质材料。

3. 发明申请

US20120115304A1 ISOLATION STRUCTURE AND FORMATION METHOD THEREOF 有权
标题翻译：隔离结构及其形成方法
公开(公告)号：US20120115304A1
公开(公告)日：2012-05-10
申请号：US13351925
申请日：2012-01-17
申请人： Ming-Tsung Wu , Shih-Ping Hong , Chun-Min Cheng , Yu-Chung Chen , Han-Hui Hsu
发明人： Ming-Tsung Wu , Shih-Ping Hong , Chun-Min Cheng , Yu-Chung Chen , Han-Hui Hsu
IPC分类号： H01L21/762
CPC分类号： H01L21/76232 , H01L21/3086 , H01L21/76229 , H01L27/105
摘要： An isolation structure comprising a substrate is provided. A trench is in the substrate. A sidewall of the trench has a first inclined surface and a second inclined surface. The first inclined surface is located on the second inclined surface. The slope of the first inclined surface is different from the slope of the second inclined surface. A length of the first inclined surface is greater than 15 nanometers.
摘要翻译：提供了包括基板的隔离结构。沟槽在衬底中。沟槽的侧壁具有第一倾斜表面和第二倾斜表面。第一倾斜面位于第二倾斜面上。第一倾斜面的斜率与第二倾斜面的斜率不同。第一倾斜面的长度大于15纳米。

4. 发明授权

US07960835B2 Fabrication of metal film stacks having improved bottom critical dimension 有权
标题翻译：具有改进的底部临界尺寸的金属膜堆叠的制造
公开(公告)号：US07960835B2
公开(公告)日：2011-06-14
申请号：US12435336
申请日：2009-05-04
申请人： Han-Hui Hsu , Ta-Hung Yang , Shih-Ping Hong , Ming-Tsung Wu , An-Chi Wei , Ching-Hsiung Li , Kuo-Liang Wei
发明人： Han-Hui Hsu , Ta-Hung Yang , Shih-Ping Hong , Ming-Tsung Wu , An-Chi Wei , Ching-Hsiung Li , Kuo-Liang Wei
IPC分类号： H01L23/48
CPC分类号： H01L23/53238 , H01L21/0276 , H01L21/32139 , H01L23/5283 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating metal film stacks is described that reduces or eliminates adverse effects of photolithographic misalignments. A bottom critical dimension is increased by removal of a bottom titanium nitride barrier.
摘要翻译：描述了制造金属膜堆叠的方法，其减少或消除光刻不对准的不利影响。通过去除底部氮化钛屏障来增加底部临界尺寸。

5. 发明申请

US20100276807A1 FABRICATION OF METAL FILM STACKS HAVING IMPROVED BOTTOM CRITICAL DIMENSION 有权
标题翻译：具有改进的底部关键尺寸的金属膜堆的制造
公开(公告)号：US20100276807A1
公开(公告)日：2010-11-04
申请号：US12435336
申请日：2009-05-04
申请人： Han-Hui Hsu , Ta-Hung Yang , Shih-Ping Hong , Ming-Tsung Wu , An-Chi Wei , Ching-Hsiung Li , Kuo-Liang Wei
发明人： Han-Hui Hsu , Ta-Hung Yang , Shih-Ping Hong , Ming-Tsung Wu , An-Chi Wei , Ching-Hsiung Li , Kuo-Liang Wei
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L23/53238 , H01L21/0276 , H01L21/32139 , H01L23/5283 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating metal film stacks is described that reduces or eliminates adverse effects of photolithographic misalignments. A bottom critical dimension is increased by removal of a bottom titanium nitride barrier.
摘要翻译：描述了制造金属膜堆叠的方法，其减少或消除光刻不对准的不利影响。通过去除底部氮化钛屏障来增加底部临界尺寸。

6. 发明授权

US08748323B2 Patterning method 有权
标题翻译：图案化方法
公开(公告)号：US08748323B2
公开(公告)日：2014-06-10
申请号：US12217645
申请日：2008-07-07
申请人： Han-Hui Hsu , Shih-Ping Hong , An-Chi Wei , Ming-Tsung Wu
发明人： Han-Hui Hsu , Shih-Ping Hong , An-Chi Wei , Ming-Tsung Wu
IPC分类号： H01L21/768 , H01L21/3105 , H01L21/314
CPC分类号： H01L21/76838 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/32139
摘要： A patterning method is provided. First, a substrate having an objective material layer thereon is provided. Thereafter, a mask layer is formed on the objective material layer. Afterwards, a patterned layer is formed over the mask layer, wherein a material of the patterned layer includes a metal-containing substance. Then, the mask layer is patterned to form a patterned mask layer. Further, the objective material layer is patterned, using the patterned mask layer as a mask.
摘要翻译：提供了图案化方法。首先，提供其上具有目标材料层的基板。此后，在目标材料层上形成掩模层。之后，在掩模层上形成图案层，其中图案化层的材料包括含金属的物质。然后，将掩模层图案化以形成图案化掩模层。此外，使用图案化掩模层作为掩模来对目标材料层进行图案化。

7. 发明申请

US20100206230A1 METHODS OF LOW TEMPERATURE OXIDATION 审中-公开
标题翻译：低温氧化法
公开(公告)号：US20100206230A1
公开(公告)日：2010-08-19
申请号：US12769445
申请日：2010-04-28
申请人： Shih-Ping Hong , Han-Hui Hsu
发明人： Shih-Ping Hong , Han-Hui Hsu
IPC分类号： C23C16/513
CPC分类号： H01L21/28211 , C23C8/36 , H01J37/321 , H01L29/51 , H01L29/78
摘要： An apparatus for forming a dielectric layer includes a process chamber configured for disposing a substrate therein, a gas inlet for delivering a mixture gas to the process chamber, and an RF generator for producing a plasma from the mixture gas. The plasma includes an oxygen-containing element and a fluorocarbon-containing element. The apparatus also has a heating element configured for maintaining the chamber temperature at a desired process temperature, for example, at 800° C. or lower, and a connector to a vacuum pump for maintaining a process pressure. The apparatus is configured for using the plasma to convert a surface portion of the substrate into an oxidized dielectric material.
摘要翻译：用于形成电介质层的装置包括：被配置为将基板设置在其中的处理室，用于将混合气体输送到处理室的气体入口和用于从混合气体产生等离子体的RF发生器。等离子体包括含氧元素和含氟烃元素。该装置还具有加热元件，该加热元件被配置为将室温度维持在期望的处理温度，例如800℃或更低，以及用于维持过程压力的真空泵的连接器。该装置被配置为使用等离子体将基板的表面部分转换成氧化介电材料。

8. 发明申请

US20100000969A1 Patterning method 有权
标题翻译：图案化方法
公开(公告)号：US20100000969A1
公开(公告)日：2010-01-07
申请号：US12217645
申请日：2008-07-07
申请人： Han-Hui Hsu , Shih-Ping Hong , An-Chi Wei , Ming-Tsung Wu
发明人： Han-Hui Hsu , Shih-Ping Hong , An-Chi Wei , Ming-Tsung Wu
IPC分类号： C23F1/00
CPC分类号： H01L21/76838 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/32139
摘要： A patterning method is provided. First, a substrate having an objective material layer thereon is provided. Thereafter, a mask layer is formed on the objective material layer. Afterwards, a patterned layer is formed over the mask layer, wherein a material of the patterned layer includes a metal-containing substance. Then, the mask layer is patterned to form a patterned mask layer. Further, the objective material layer is patterned, using the patterned mask layer as a mask.
摘要翻译：提供了图案化方法。首先，提供其上具有目标材料层的基板。此后，在目标材料层上形成掩模层。之后，在掩模层上形成图案层，其中图案化层的材料包括含金属的物质。然后，将掩模层图案化以形成图案化掩模层。此外，使用图案化掩模层作为掩模来对目标材料层进行图案化。

9. 发明授权

US08298952B2 Isolation structure and formation method thereof 有权
标题翻译：隔离结构及其形成方法
公开(公告)号：US08298952B2
公开(公告)日：2012-10-30
申请号：US13351925
申请日：2012-01-17
申请人： Ming-Tsung Wu , Shih-Ping Hong , Chun-Min Cheng , Yu-Chung Chen , Han-Hui Hsu
发明人： Ming-Tsung Wu , Shih-Ping Hong , Chun-Min Cheng , Yu-Chung Chen , Han-Hui Hsu
IPC分类号： H01L21/70
CPC分类号： H01L21/76232 , H01L21/3086 , H01L21/76229 , H01L27/105
摘要： An isolation structure comprising a substrate is provided. A trench is in the substrate. A sidewall of the trench has a first inclined surface and a second inclined surface. The first inclined surface is located on the second inclined surface. The slope of the first inclined surface is different from the slope of the second inclined surface. A length of the first inclined surface is greater than 15 nanometers.
摘要翻译：提供了包括基板的隔离结构。沟槽在衬底中。沟槽的侧壁具有第一倾斜表面和第二倾斜表面。第一倾斜面位于第二倾斜面上。第一倾斜面的斜率与第二倾斜面的斜率不同。第一倾斜面的长度大于15纳米。

10. 发明申请

US20100295147A1 ISOLATION STRUCTURE AND FORMATION METHOD THEREOF 有权
标题翻译：隔离结构及其形成方法
公开(公告)号：US20100295147A1
公开(公告)日：2010-11-25
申请号：US12470587
申请日：2009-05-22
申请人： Ming-Tsung Wu , Shih-Ping Hong , Chun-Min Cheng , Yu-Chung Chen , Han-Hui Hsu
发明人： Ming-Tsung Wu , Shih-Ping Hong , Chun-Min Cheng , Yu-Chung Chen , Han-Hui Hsu
IPC分类号： H01L29/06 , H01L21/762
CPC分类号： H01L21/76232 , H01L21/3086 , H01L21/76229 , H01L27/105
摘要： An isolation structure comprising a substrate is provided. A trench is in the substrate. A sidewall of the trench has a first inclined surface and a second inclined surface. The first inclined surface is located on the second inclined surface. The slope of the first inclined surface is different from the slope of the second inclined surface. A length of the first inclined surface is greater than 15 nanometers.
摘要翻译：提供了包括基板的隔离结构。沟槽在衬底中。沟槽的侧壁具有第一倾斜表面和第二倾斜表面。第一倾斜面位于第二倾斜面上。第一倾斜面的斜率与第二倾斜面的斜率不同。第一倾斜面的长度大于15纳米。

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