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1. 发明授权

US06847046B1 Light-emitting device and method for manufacturing the same 失效
标题翻译：发光装置及其制造方法
公开(公告)号：US06847046B1
公开(公告)日：2005-01-25
申请号：US10748256
申请日：2003-12-31
申请人： Shih-Chen Wei , Yung-Hsin Shie , Wen-Liang Li , Shi-Ming Chen
发明人： Shih-Chen Wei , Yung-Hsin Shie , Wen-Liang Li , Shi-Ming Chen
IPC分类号： H01L21/20 , H01L29/15 , H01L29/20 , H01L33/00 , H01L33/04 , H01L33/12 , H01L29/06
CPC分类号： H01L29/155 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L33/007 , H01L33/04 , H01L33/12
摘要： A light-emitting device and a method for manufacturing the same are described, by forming a SiN/Al1-x-yInxGayN(0≦x≦1, 0≦y≦1, x+y≦1) superlattice layer between a substrate and an undoped GaN as a buffer layer, so as to reduce dislocation density of the buffer layer. In the SiN/Al1-x-yInxGayN(0≦x≦1, 0≦y≦1, x+y≦1) superlattice layer, Al1-x-yInxGayN(0≦x≦1, 0≦y≦1, x+y≦1) can be n-type, p-type or undoped.
摘要翻译：通过形成SiN / Al1-x-yInxGayN（0≤x≤1,0<= y <= 1，x + y <= 1）超晶格来描述发光器件及其制造方法在衬底和未掺杂GaN之间的层作为缓冲层，以便减小缓冲层的位错密度。在SiN / Al1-x-yInxGayN（0≤x≤1,0<= y <= 1，x + y <= 1）超晶格层中，Al1-x-yInxGayN（0≤x≤1， 0 <= y <= 1，x + y <= 1）可以是n型，p型或未掺杂。

2. 发明申请

US20070057275A1 Vertical light-emitting diode and method for manufacturing the same 审中-公开
标题翻译：垂直发光二极管及其制造方法
公开(公告)号：US20070057275A1
公开(公告)日：2007-03-15
申请号：US11264774
申请日：2005-10-31
申请人： Shi-Ming Chen
发明人： Shi-Ming Chen
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/0079
摘要： A vertical light-emitting diode and a method for manufacturing the same are described. In the method for manufacturing the vertical light-emitting diode, a sapphire substrate is provided. An illuminant epitaxial structure is formed on the sapphire substrate. Next, a first conductivity type electrode is formed on a surface of the illuminant epitaxial structure. Then, a local removal step is performed to remove a portion of the sapphire substrate from another surface of the illuminant epitaxial structure and to expose a portion of the other surface of the illuminant epitaxial structure, wherein the other surface is opposite to the surface of the illuminant epitaxial structure. Subsequently, a second conductivity type electrode is formed on the exposed portion of the other surface of the illuminant epitaxial structure, wherein the first conductivity type electrode and the second conductivity type electrode are opposite conductivity types.
摘要翻译：对垂直发光二极管及其制造方法进行说明。在制造垂直发光二极管的方法中，提供蓝宝石衬底。在蓝宝石衬底上形成发光体外延结构。接下来，在发光体外延结构的表面上形成第一导电型电极。然后，执行局部去除步骤以从发光体外延结构的另一表面去除蓝宝石衬底的一部分，并且暴露光源外延结构的另一表面的一部分，其中另一个表面与光源外延结构。随后，在发光体外延结构的另一个表面的暴露部分上形成第二导电型电极，其中第一导电型电极和第二导电型电极是相反的导电类型。

3. 发明申请

US20060289885A1 Light-emitting diode 审中-公开
标题翻译：发光二极管
公开(公告)号：US20060289885A1
公开(公告)日：2006-12-28
申请号：US11216028
申请日：2005-09-01
申请人： Shi-Ming Chen , Chia-Yu Chang
发明人： Shi-Ming Chen , Chia-Yu Chang
IPC分类号： H01L33/00
CPC分类号： H01L33/54
摘要： A light-emitting diode (LED) is described. The light-emitting diode has a light-emitting diode chip and a package structure covering the light-emitting diode chip. A surface of the package structure has a pattern structure, in which the pattern structure includes a plurality of stria structures for controlling a light shape output by the light-emitting diode.
摘要翻译：描述了发光二极管（LED）。发光二极管具有覆盖发光二极管芯片的发光二极管芯片和封装结构。封装结构的表面具有图案结构，其中图案结构包括用于控制由发光二极管输出的光形状的多个条纹结构。

4. 发明授权

US07982238B2 Light-emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US07982238B2
公开(公告)日：2011-07-19
申请号：US12200019
申请日：2008-08-28
申请人： Chang-Hsing Chu , Kui-Hui Yu , Shi-Ming Chen
发明人： Chang-Hsing Chu , Kui-Hui Yu , Shi-Ming Chen
IPC分类号： H01L33/00
CPC分类号： H01L33/642 , H01L33/0079 , H01L33/20 , H01L33/641
摘要： A light-emitting diode (LED) is provided, wherein the LED comprises an epitaxial structure, a bonding layer and a composite substrate. The composite substrate comprises a patterned substrate having a pattern and a conductive material layer disposed around the patterned substrate. The bonding layer is formed on the composite substrate. The epitaxial structure is formed on the bonding layer.
摘要翻译：提供了一种发光二极管（LED），其中LED包括外延结构，结合层和复合衬底。复合衬底包括具有图案的图案化衬底和设置在图案化衬底周围的导电材料层。接合层形成在复合基板上。在结合层上形成外延结构。

5. 发明授权

US07939834B2 Light- emitting device 失效
标题翻译：发光装置
公开(公告)号：US07939834B2
公开(公告)日：2011-05-10
申请号：US12126482
申请日：2008-05-23
申请人： Shi-Ming Chen , Chang-Hsin Chu
发明人： Shi-Ming Chen , Chang-Hsin Chu
IPC分类号： H01L27/15
CPC分类号： H01L33/642 , H01L33/20
摘要： A light-emitting device includes a substrate having an epitaxial-forming surface and a back surface opposite to the epitaxial-forming surface, the substrate being formed with a recess indented from the back surface, the back surface having a recessed portion that defines the recess, and a planar portion extending outwardly from the recessed portion; an epitaxy layer; a continuous heat-dissipating layer formed on the planar portion and the recessed portion of the back surface of the substrate; and first and second electrodes coupled electrically to the epitaxy layer.
摘要翻译：发光器件包括具有外延形成表面和与外延形成表面相对的后表面的衬底，所述衬底形成有从后表面凹陷的凹部，所述后表面具有限定凹部的凹部和从凹部向外延伸的平面部分; 外延层; 形成在基板的背面的平面部和凹部的连续散热层; 以及与外延层电连接的第一和第二电极。

6. 发明申请

US20090159899A1 LIGHT- EMITTING DEVICE 失效
标题翻译：发光装置
公开(公告)号：US20090159899A1
公开(公告)日：2009-06-25
申请号：US12126482
申请日：2008-05-23
申请人： Shi-Ming Chen , Chang-Hsin Chu
发明人： Shi-Ming Chen , Chang-Hsin Chu
IPC分类号： H01L33/00
CPC分类号： H01L33/642 , H01L33/20
摘要： A light-emitting device includes a substrate having an epitaxial-forming surface and a back surface opposite to the epitaxial-forming surface, the substrate being formed with a recess indented from the back surface, the back surface having a recessed portion that defines the recess, and a planar portion extending outwardly from the recessed portion; an epitaxy layer; a continuous heat-dissipating layer formed on the planar portion and the recessed portion of the back surface of the substrate; and first and second electrodes coupled electrically to the epitaxy layer.
摘要翻译：发光器件包括具有外延形成表面和与外延形成表面相对的后表面的衬底，所述衬底形成有从后表面凹陷的凹部，所述后表面具有限定凹部的凹部和从凹部向外延伸的平面部分; 外延层; 形成在基板的背面的平面部和凹部的连续散热层; 以及与外延层电连接的第一和第二电极。

7. 发明授权

US07432117B2 Light-emitting diode and manufacturing method thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US07432117B2
公开(公告)日：2008-10-07
申请号：US11232633
申请日：2005-09-22
申请人： Chang-Hsing Chu , Kui-Hui Yu , Shi-Ming Chen
发明人： Chang-Hsing Chu , Kui-Hui Yu , Shi-Ming Chen
IPC分类号： H01L21/00
CPC分类号： H01L33/642 , H01L33/0079 , H01L33/20 , H01L33/641
摘要： A light-emitting diode and the manufacturing method thereof are provided, wherein the light-emitting diode comprises an epitaxial structure, a bonding layer and a composite substrate. The bonding layer located over one side of the epitaxial structure is used for adhering the composite substrate to the epitaxial structure. The composite substrate comprises a patterned silicon layer penetrated through by a plurality of openssilicon, and a metal layer covering the patterned silicon layer, wherein a portion of the metal layer is filled into the opens and contacts the bonding layer.
摘要翻译：提供了一种发光二极管及其制造方法，其中发光二极管包括外延结构，接合层和复合衬底。位于外延结构一侧的结合层用于将复合衬底粘附到外延结构上。复合衬底包括穿过多个开硅硅的图案化硅层和覆盖图案化硅层的金属层，其中金属层的一部分被填充到开口中并与接合层接触。

8. 发明授权

US07301272B2 Lighting device and method for manufacturing the same 有权
标题翻译：照明装置及其制造方法
公开(公告)号：US07301272B2
公开(公告)日：2007-11-27
申请号：US11105402
申请日：2005-04-14
申请人： Chang-Hsin Chu , Kuo-Hui Yu Chu , Shi-Ming Chen
发明人： Chang-Hsin Chu , Kuo-Hui Yu Chu , Shi-Ming Chen
IPC分类号： H01J1/62
CPC分类号： H01L33/38 , H01L33/20 , H01L33/44 , H01L2933/0016
摘要： A lighting device and a method for manufacturing the same are described. First, a semiconductor layer of a first electrical property, an active layer and a semiconductor layer of a second electrical property are sequentially formed, and part of them are removed to form a mesa. A transparent contact layer is formed thereon, and thus forms a stack. Afterwards, a passivation layer is deposited on the stack and a first part of the semiconductor layer of the first electrical property adjacent to the stack. Part of the passivation layer is removed to expose part of the transparent contact layer. Then, an electrode of the second electrical property is formed on the exposed transparent contact layer. Afterwards, the electrode of the second electrical property is extended to the passivation layer on the first part of the semiconductor layer of the first electrical property to form a guard ring.
摘要翻译：对照明装置及其制造方法进行说明。首先，依次形成具有第一电特性的半导体层，有源层和第二电性质的半导体层，并且去除其中的一部分以形成台面。在其上形成透明接触层，从而形成叠层。之后，钝化层沉积在堆叠上，并且与堆叠相邻的第一电性质的半导体层的第一部分被沉积。去除钝化层的一部分以暴露部分透明接触层。然后，在露出的透明接触层上形成第二电性质的电极。之后，第二电性能的电极延伸到第一电性能的半导体层的第一部分上的钝化层以形成保护环。

9. 发明授权

US06781147B2 Lateral current blocking light emitting diode and method of making the same 有权
公开(公告)号：US06781147B2
公开(公告)日：2004-08-24
申请号：US10340137
申请日：2003-01-10
申请人： Shi-Ming Chen , Chun-Liang Lin , Wen-Bin Chen , Yan-Kuin Su
发明人： Shi-Ming Chen , Chun-Liang Lin , Wen-Bin Chen , Yan-Kuin Su
IPC分类号： H01L2906
CPC分类号： H01L33/20 , H01L33/145
摘要： A lateral current blocking light emitting diode (LED) and a method of making the same are disclosed. The present invention features in that a trench is formed between the two electrodes via the technique of such as etching, wherein the depth of the trench reaches to at least the active layer, thereby blocking the lateral current between the two electrodes. With the use of the present invention, the possibility of the current passing through the active layer can be increased, thereby improving the brightness of the LED; and the chance of the photons emitted from the lateral of the trench can be raised wherein the photons are generated from the active layer, thereby increasing the output efficiency of the photons generated from the active layer.

10. 再颁专利

USRE43426E1 Fabrication method of transparent electrode on visible light-emitting diode 有权
标题翻译：可见光发光二极管上透明电极的制作方法
公开(公告)号：USRE43426E1
公开(公告)日：2012-05-29
申请号：US13152124
申请日：2011-06-02
申请人： Tse-Liang Ying , Shi-Ming Chen
发明人： Tse-Liang Ying , Shi-Ming Chen
IPC分类号： H01L21/00
CPC分类号： H01L33/42 , Y10S438/956
摘要： A method for forming a transparent electrode on a visible light-emitting diode is described. A visible light-emitting diode element is provided, and the visible light-emitting diode element has a substrate, an epitaxial structure and a metal electrode. The metal electrode and the epitaxial structure are located on the same side of the substrate, or located respectively on the different sides of the substrate. An ohmic metal layer is formed on a surface of the epitaxial structure. The ohmic metal layer is annealed. The ohmic metal layer is removed to expose the surface of the epitaxial structure. A transparent electrode layer is formed on the exposed surface. A metal pad is formed on the transparent electrode layer.
摘要翻译：描述了在可见光发光二极管上形成透明电极的方法。提供了可见光发光二极管元件，可见光发光二极管元件具有基板，外延结构和金属电极。金属电极和外延结构位于基板的同一侧，或分别位于基板的不同侧。在外延结构的表面上形成欧姆金属层。欧姆金属层退火。去除欧姆金属层以露出外延结构的表面。在露出的表面上形成透明电极层。在透明电极层上形成金属焊盘。

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