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1. 发明授权

US4786922A Electron beam recording and reproducing apparatus 失效
标题翻译：电子束记录和再现装置
公开(公告)号：US4786922A
公开(公告)日：1988-11-22
申请号：US13798
申请日：1987-02-12
申请人： Shigeyuki Hosoki , Keiji Takata , Toshiyuki Aida , Sumio Hosaka
发明人： Shigeyuki Hosoki , Keiji Takata , Toshiyuki Aida , Sumio Hosaka
IPC分类号： G11B9/00 , G11B9/10 , G11B9/14 , G11B11/03 , G11B11/08
CPC分类号： G11B9/10 , G11B11/03 , G11B11/08
摘要： An electron beam recording and reproducing apparatus which radiates the electron beam emitted from a needle cathode to a disc for recording and reproduction is disclosed. The needle cathode moves on the disc. A magnetic field is applied in the axial direction of the needle cathode in order to converge and radiate the electron beam emitted from the needle cathode to the disc.
摘要翻译：公开了一种将从针状阴极发射的电子束辐射到用于记录和再现的盘的电子束记录和再现装置。针状阴极在盘上移动。在针状阴极的轴向上施加磁场，以使会聚和辐射从针状阴极发射到电子束的电子束。

2. 发明授权

US4772817A Cathode mounting a high-frequency piezoelectric chip 失效
标题翻译：阴极安装高频压电芯片
公开(公告)号：US4772817A
公开(公告)日：1988-09-20
申请号：US56659
申请日：1987-06-02
申请人： Toshiyuki Aida , Hiroshi Takeuchi , Sumio Hosaka , Shigeyuki Hosoki , Tadashi Ikeda
发明人： Toshiyuki Aida , Hiroshi Takeuchi , Sumio Hosaka , Shigeyuki Hosoki , Tadashi Ikeda
IPC分类号： G01N37/00 , G01Q10/04 , G01Q60/10 , G01Q70/08 , H01J37/067 , H01J37/28 , H01L41/09 , H01L41/18 , H01L41/08
CPC分类号： G01Q60/16 , B82Y35/00 , G01Q10/04 , H01J37/067 , H01J37/28 , H01L41/18 , Y10S977/872
摘要： A piezoelectric crystal without spontaneous polarization such as Li.sub.2 B.sub.4 O.sub.7 or quartz crystal is jointed to a cathode on the side opposite to the tip thereof to finely drive the cathode. The surface observation apparatus mounting the cathode makes it possible to observe the surface of a sample at high speeds.
摘要翻译：没有诸如Li2B4O7或石英晶体的自发极化的压电晶体在与其尖端相对的一侧的阴极上接合以微调驱动阴极。安装阴极的表面观察装置使得可以高速地观察样品的表面。

3. 发明授权

US06069369A Superconducting device 失效
标题翻译：超导装置
公开(公告)号：US06069369A
公开(公告)日：2000-05-30
申请号：US957732
申请日：1997-10-24
申请人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
IPC分类号： H01L39/22 , C01G1/00 , C01G3/00 , C23C14/08 , C30B29/22 , H01B12/00 , H01L39/24 , H01L29/06
CPC分类号： H01L39/2496 , H01L39/225 , H01L39/228 , H01L2924/0002 , Y10S505/70 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
摘要翻译：超导装置包括具有超导体的结构的类型 - 正常导体（或半导体） - 超导体，以及在超导体之间具有超导弱连接部分的类型。构成超导装置的超导体由含有选自Ba，Sr，Ca，Mg和Ra中的至少一种元素的钙钛矿型和K2NiF4型结晶结构体的氧化物构成。选自La，Y，Ce，Sc，Sm，Eu，Er，Gd，Ho，Yb，Nd，Pr，Lu和Tb中的至少一种元素; 铜另外，超导体的晶体的c轴基本上垂直于流过该超导体的电流的方向。

4. 发明授权

US5126315A High Tc superconducting device with weak link between two superconducting electrodes 失效
标题翻译：具有两个超级电极之间的弱连接的高TC超导体器件
公开(公告)号：US5126315A
公开(公告)日：1992-06-30
申请号：US155806
申请日：1988-02-16
申请人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
IPC分类号： H01L39/22 , C01G1/00 , C01G3/00 , C23C14/08 , C30B29/22 , H01B12/00 , H01L39/24
CPC分类号： H01L39/2496 , H01L39/225 , H01L39/228 , H01L2924/0002 , Y10S505/70 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.

5. 发明授权

US4518890A Impregnated cathode 失效
标题翻译：浸渍阴极
公开(公告)号：US4518890A
公开(公告)日：1985-05-21
申请号：US456247
申请日：1983-01-06
申请人： Sadanori Taguchi , Toshiyuki Aida , Shigehiko Yamamoto , Yukio Honda
发明人： Sadanori Taguchi , Toshiyuki Aida , Shigehiko Yamamoto , Yukio Honda
IPC分类号： H01J1/14 , H01J1/28 , H01J19/06 , H01K1/04
CPC分类号： H01J1/14 , H01J1/28
摘要： An impregnated cathode comprises a porous refractory substrate of refractory material such as tungsten containing at least one of scandium oxide particles and oxide particles containing scandium such as (Al, Sc).sub.2 O.sub.3, and an electron emissive material impregnated into pores of the substrate, and has an operating temperature lower by about 300.degree. C. than that of the conventional impregnated cathode containing no scandium oxide particles, or scandium.
摘要翻译：浸渍阴极包括耐火材料的多孔耐火基材，例如含有氧化钪颗粒和含有钪的氧化物颗粒如（Al，Sc）2 O 3中的至少一种的钨和浸渍在基材的孔中的电子发射材料，并且具有操作温度比不含氧化钪颗粒或钪的常规浸渍阴极低约300℃。

6. 发明申请

US20090310718A1 Data distribution system and reception apparatus 审中-公开
标题翻译：数据分配系统和接收装置
公开(公告)号：US20090310718A1
公开(公告)日：2009-12-17
申请号：US12457560
申请日：2009-06-16
申请人： Toshiyuki Aida , Yoshitaka Ozaki
发明人： Toshiyuki Aida , Yoshitaka Ozaki
IPC分类号： H04L27/06
CPC分类号： H04L1/0071
摘要： In a data distributing party, original data is divided into sub-blocks. Each sub-block is encoded according to a predetermined encoding/decoding formula, to divide each sub-block into sub-symbols. In the predetermined encoding/decoding formula, data prior to encoding can be restored by obtaining a predetermined number of data from data posterior to encoding. Each symbol is generated by retrieving sub-symbols from respective sub-blocks and each generated symbol is distributed. In contrast, in a data receiving party, when completing the reception of the symbols not less than a predetermined number necessary for restoring, the sub-symbols are extracted from the respective received symbols in an order of receiving the symbols to restore the sub-blocks posterior to encoding. Each restored sub-block posterior to encoding is decoded according to the above encoding/decoding formula to restore each corresponding sub-block prior to encoding. The restored sub-blocks are then joined to one another to restore the original data.
摘要翻译：在数据分发方中，原始数据被划分为子块。每个子块根据预定的编码/解码公式被编码，以将每个子块划分成子符号。在预定的编码/解码公式中，可以通过从编码之后的数据获得预定数量的数据来恢复编码之前的数据。每个符号通过从相应子块中检索子符号而产生，并且每个生成的符号被分发。相反，在数据接收方中，当完成不少于恢复所需的预定数量的符号的接收时，按照接收符号的顺序从各个接收的符号中提取子符号以恢复子块编码后。根据上述编码/解码公式对编码之后的每个恢复的子块进行解码，以在编码之前恢复每个对应的子块。然后将恢复的子块相互连接以恢复原始数据。

7. 发明授权

US5729046A Superconducting device having pinning regions 失效
标题翻译：具有钉扎区域的超导装置
公开(公告)号：US5729046A
公开(公告)日：1998-03-17
申请号：US462356
申请日：1995-06-05
申请人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
IPC分类号： H01L39/22 , C01G1/00 , C01G3/00 , C23C14/08 , C30B29/22 , H01B12/00 , H01L39/24 , H01L39/00
CPC分类号： H01L39/2496 , H01L39/225 , H01L39/228 , H01L2924/0002 , Y10S505/70 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors. The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
摘要翻译：超导装置包括具有超导体的结构的类型 - 正常导体（或半导体） - 超导体，以及在超导体之间具有超导弱连接部分的类型。构成超导装置的超导体由含有选自Ba，Sr，Ca，Mg和Ra中的至少一种元素的钙钛矿型和K2NiF4型结晶结构体的氧化物构成。选自La，Y，Ce，Sc，Sm，Eu，Er，Gd，Ho，Yb，Nd，Pr，Lu和Tb中的至少一种元素; 铜另外，超导体的晶体的c轴基本上垂直于流过该超导体的电流的方向。

8. 发明授权

US5077266A Method of forming weak-link Josephson junction, and superconducting device employing the junction 失效
标题翻译：形成弱连接JOSEPHSON JUNCTION的方法和使用连接的超级设备
公开(公告)号：US5077266A
公开(公告)日：1991-12-31
申请号：US405737
申请日：1989-09-11
申请人： Kazumasa Takagi , Tokuumi Fukazawa , Yoshimi Kawanami , Yuuichi Madokoro , Katsuki Miyauchi , Toshiyuki Aida , Yukio Honda , Masaaki Futamoto , Masahiko Hiratani
发明人： Kazumasa Takagi , Tokuumi Fukazawa , Yoshimi Kawanami , Yuuichi Madokoro , Katsuki Miyauchi , Toshiyuki Aida , Yukio Honda , Masaaki Futamoto , Masahiko Hiratani
IPC分类号： H01L39/22 , H01L39/24
CPC分类号： H01L39/2496 , Y10S505/701 , Y10S505/702 , Y10S505/729 , Y10T29/41
摘要： A weak-link Josephson junction is of the type employing a thin film of an oxide superconductor, in which a crystal grain boundary produced reflecting an artificial crystal defect is utilized as the weak-link junction. The crystal grain boundary is formed concretely by a method in which atoms of different species are deposited on the predetermined part of the surface of a substrate, the predetermined part of the surface of a substrate is disturbed, or parts of different crystal face orientations are formed at the surface of a substrate, whereupon the superconducting thin film is epitaxially grown on the substrate, or by a method in which the predetermined part of the superconducting thin film, epitaxially grown on a substrate, is diffused with atoms of different species hampering a superconductivity, or the predetermined part of the superconducting thin film is disturbed, whereupon the superconducting thin film is annealed.

9. 发明授权

US4774414A Liquid metal ion source 失效
标题翻译：液态金属离子源
公开(公告)号：US4774414A
公开(公告)日：1988-09-27
申请号：US086093
申请日：1987-08-12
申请人： Kaoru Umemura , Tohru Ishitani , Toshiyuki Aida , Hifumi Tamura
发明人： Kaoru Umemura , Tohru Ishitani , Toshiyuki Aida , Hifumi Tamura
IPC分类号： H01J37/08 , H01J1/02 , H01J27/26 , H01J1/05
CPC分类号： H01J27/26
摘要： This invention relates to a liquid metal ion source which melts a source material and extracts ions. Stable extraction of ions of at least one element selected from among As, P and B for a long period of time can be attained by using as a source material an alloy having a composition represented by the formula L.sub.X R.sub.Y M.sub.A wherein X, Y and A each stands for atomic percentage; L at least one element selected from among Pt, Pd and Ag; R at least one element selected from among As, P and B; M at least one element selected from among Ge, Si and Sb; 5

10. 发明授权

US4291252A Electron tube cathode 失效
标题翻译：电子管阴极
公开(公告)号：US4291252A
公开(公告)日：1981-09-22
申请号：US95933
申请日：1979-11-20
申请人： Toshiyuki Aida , Shigehiko Yamamoto , Sadanori Taguchi , Isamu Yuito , Yukio Honda , Ushio Kawabe , Akira Misumi , Takao Kawamura , Hiroshi Fukushima , Yoshio Degawa
发明人： Toshiyuki Aida , Shigehiko Yamamoto , Sadanori Taguchi , Isamu Yuito , Yukio Honda , Ushio Kawabe , Akira Misumi , Takao Kawamura , Hiroshi Fukushima , Yoshio Degawa
IPC分类号： H01J1/14 , H01J19/06 , H01K1/04
CPC分类号： H01J1/14
摘要： An electron tube cathode has a composite suppression layer structure interposed between the base metal and the electron-emitting material to suppress an interface layer formed through the reaction of the base metal with the electron emissive material. The composite layer structure includes a thin layer of Pt or Re and a layer of oxide of Zr and/or Hf. As a result, the formation of the interface layer is prevented so that the useful life of the electron tube cathode is prolonged.
摘要翻译：电子管阴极具有插入在基底金属和电子发射材料之间的复合抑制层结构，以抑制通过贱金属与电子发射材料的反应形成的界面层。复合层结构包括Pt或Re的薄层和Zr和/或Hf的氧化物层。结果，防止了界面层的形成，延长了电子管阴极的使用寿命。

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