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1. 发明申请

US20080217632A1 Gan-Based III-V Compound Semiconductor Light-Emitting Element and Method for Manufacturing Thereof 审中-公开
标题翻译：赣基III-V复合半导体发光元件及其制造方法
公开(公告)号：US20080217632A1
公开(公告)日：2008-09-11
申请号：US10569877
申请日：2004-08-26
申请人： Shigetaka Tomiya , Osamu Goto
发明人： Shigetaka Tomiya , Osamu Goto
IPC分类号： H01L33/00 , H01L21/02
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/2009 , H01S5/3407
摘要： A GaN-based III-V group compound semiconductor light-emitting element having high light-emitting efficiency and high reliability at a light-emitting wavelength of 440 nm or more is provided.A GaN-based semiconductor laser element 10 has a laminated structure of: a stripe-shaped convex portion 18 made of a surface layer of a sapphire substrate 12, a buffer layer 14 and a first GaN layer 16, and on the sapphire substrate, a second GaN layer 20, an n-side cladding layer 22, an n-side guide layer 24, an active layer 26, a deterioration prevention layer 28, a p-side guide layer 30, a p-side cladding layer 32 and a p-side contact layer 34. The active layer is formed of a quantum well structure including a GaInN barrier layer 36 and a GaInN well layer 38, and a planar crystal defect prevention layer 40 made of an AlGaN layer is provided on the upper surface or lower surface, or between both the surfaces of the barrier layer and the well layer. Upper portions of the p-side contact layer and the p-side cladding layer are formed as a stripe-shaped ridge 42 and a mesa 44 is formed in parallel with the ridge.
摘要翻译：提供了在440nm以上的发光波长下具有高发光效率和高可靠性的GaN系III-V族化合物半导体发光元件。 GaN系半导体激光元件10具有如下层叠结构：由蓝宝石基板12的表面层，缓冲层14和第一GaN层16构成的条状凸部18，在蓝宝石基板上，第二GaN层20，n侧包层22，n侧引导层24，有源层26，劣化防止层28，p侧引导层30，p侧覆层32和p 有源层由包括GaInN势垒层36和GaInN阱层38的量子阱结构形成，并且在上表面或更低层上设置由AlGaN层制成的平面晶体缺陷防止层40 表面，或在阻挡层和阱层的两个表面之间。 p侧接触层和p侧包覆层的上部形成为条状的脊部42，并且与脊部平行地形成台面44。

2. 发明申请

US20070117357A1 METHOD OF MANUFACTURING A SEMICONDUCTOR LIGHT EMITTING DEVICE, SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING A DEVICE, AND DEVICE 审中-公开
标题翻译：制造半导体发光装置的方法，半导体发光装置，制造半导体器件的方法，半导体器件，制造器件的方法和器件
公开(公告)号：US20070117357A1
公开(公告)日：2007-05-24
申请号：US11626098
申请日：2007-01-23
申请人： Tsunenori Asatsuma , Shigetaka Tomiya , Koshi Tamamura , Tsuyoshi Tojo , Osamu Goto , Kensaku Motoki
发明人： Tsunenori Asatsuma , Shigetaka Tomiya , Koshi Tamamura , Tsuyoshi Tojo , Osamu Goto , Kensaku Motoki
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： C30B25/02 , B82Y20/00 , C30B29/403 , C30B29/406 , H01L21/0254 , H01L21/0262 , H01L21/02664 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L33/32 , H01S5/0207 , H01S5/0213 , H01S5/2036 , H01S5/22 , H01S5/2201 , H01S5/2231 , H01S5/32341 , H01S5/34333 , H01S5/4031 , H01S2301/173
摘要： When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.
摘要翻译：当半导体发光器件或半导体器件通过在由氮化物III-V化合物半导体衬底构成的氮化物III-V化合物半导体衬底上生长氮化物III-V化合物半导体层（其将形成发光器件结构或器件结构）具有第一平均位错密度的晶体的形式和具有高于第一平均位错密度的第二平均位错密度并在第一区域中周期性排列的多个第二区域，器件区域被限定在氮化物III-V化合物半导体衬底使得器件区域基本上不包括第二区域，最终获得的器件的发射区域或有源区域不包括第二区域。

3. 发明授权

US07091056B2 Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and device 有权
标题翻译：半导体发光器件的制造方法，半导体发光器件，半导体器件的制造方法，半导体器件，器件的制造方法以及器件
公开(公告)号：US07091056B2
公开(公告)日：2006-08-15
申请号：US11148771
申请日：2005-06-09
申请人： Tsunenori Asatsuma , Shigetaka Tomiya , Koshi Tamamura , Tsuyoshi Tojo , Osamu Goto , Kensaku Motoki
发明人： Tsunenori Asatsuma , Shigetaka Tomiya , Koshi Tamamura , Tsuyoshi Tojo , Osamu Goto , Kensaku Motoki
IPC分类号： H01L21/00
CPC分类号： C30B25/02 , B82Y20/00 , C30B29/403 , C30B29/406 , H01L21/0254 , H01L21/0262 , H01L21/02664 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L33/32 , H01S5/0207 , H01S5/0213 , H01S5/2036 , H01S5/22 , H01S5/2201 , H01S5/2231 , H01S5/32341 , H01S5/34333 , H01S5/4031 , H01S2301/173
摘要： When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III–V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III–V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III–V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.
摘要翻译：当半导体发光器件或半导体器件通过在由氮化物III-V化合物半导体衬底构成的氮化物III-V化合物半导体衬底上生长氮化物III-V化合物半导体层（其将形成发光器件结构或器件结构）具有第一平均位错密度的晶体的形式和具有高于第一平均位错密度的第二平均位错密度并在第一区域中周期性排列的多个第二区域，器件区域被限定在氮化物III-V化合物半导体衬底使得器件区域基本上不包括第二区域，最终获得的器件的发射区域或有源区域不包括第二区域。

4. 发明申请

US20130143357A1 METHOD OF FORMING ORGANIC THIN FILM AND ORGANIC THIN FILM FORMING APPARATUS, AS WELL AS METHOD OF MANUFACTURING ORGANIC DEVICE 审中-公开
标题翻译：形成有机薄膜和有机薄膜形成装置的方法，作为制造有机装置的方法
公开(公告)号：US20130143357A1
公开(公告)日：2013-06-06
申请号：US13816983
申请日：2011-08-10
申请人： Osamu Goto , Daisuke Hobara , Akihiro Nomoto , Yosuke Murakami , Shigetaka Tomiya , Norihito Kobayashi , Keisuke Shimizu , Mao Katsuhara , Takahiro Ohe , Noriyuki Kawashima , Yuka Takahashi , Toshio Fukuda , Yui Ishii
发明人： Osamu Goto , Daisuke Hobara , Akihiro Nomoto , Yosuke Murakami , Shigetaka Tomiya , Norihito Kobayashi , Keisuke Shimizu , Mao Katsuhara , Takahiro Ohe , Noriyuki Kawashima , Yuka Takahashi , Toshio Fukuda , Yui Ishii
IPC分类号： H01L51/00
CPC分类号： H01L51/0002 , H01L51/0026 , H01L51/0541 , H01L51/0545
摘要： There is provided a method of forming an organic thin film, capable of forming a single-crystal organic thin film easily and rapidly while controlling a thickness and a size. After an organic solution is supplied to one surface (a solution accumulating region wide in width, and a solution constricting region narrow in width and connected thereto) of a film-formation substrate supported by a support controllable in temperature, a movable body controllable in temperature independently of the support is moved along a surface of the support while being kept in contact with the organic solution. The temperature of the support is set at a temperature positioned between a solubility curve and a super-solubility curve concerning the organic solution, and the temperature of the movable body is set at a temperature positioned on a side higher in temperature than the solubility curve.
摘要翻译：提供一种形成有机薄膜的方法，其能够在控制厚度和尺寸的同时容易且快速地形成单晶有机薄膜。在由可控制的支撑体支撑的成膜基材的一个表面（广泛宽度的溶液积聚区域和宽度窄的溶液收缩区域）供给有机溶液后，可控温度的可移动体独立于载体在保持与有机溶液接触的同时沿着载体的表面移动。将载体的温度设定在溶解度曲线和有机溶液的超溶解度曲线之间的温度下，将移动体的温度设定在比溶解度曲线高的一侧的温度。

5. 发明申请

US20050227392A1 Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and device 有权
标题翻译：半导体发光器件的制造方法，半导体发光器件，半导体器件的制造方法，半导体器件，器件的制造方法以及器件
公开(公告)号：US20050227392A1
公开(公告)日：2005-10-13
申请号：US11148771
申请日：2005-06-09
申请人： Tsunenori Asatsuma , Shigetaka Tomiya , Koshi Tamamura , Tsuyoshi Tojo , Osamu Goto , Kensaku Motoki
发明人： Tsunenori Asatsuma , Shigetaka Tomiya , Koshi Tamamura , Tsuyoshi Tojo , Osamu Goto , Kensaku Motoki
IPC分类号： C30B25/02 , H01L21/20 , H01L33/00 , H01L33/02 , H01L33/16 , H01L33/32 , H01S5/02 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , H01S5/40 , H01L21/00 , H01L29/22
CPC分类号： C30B25/02 , B82Y20/00 , C30B29/403 , C30B29/406 , H01L21/0254 , H01L21/0262 , H01L21/02664 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L33/32 , H01S5/0207 , H01S5/0213 , H01S5/2036 , H01S5/22 , H01S5/2201 , H01S5/2231 , H01S5/32341 , H01S5/34333 , H01S5/4031 , H01S2301/173
摘要： When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.
摘要翻译：当半导体发光器件或半导体器件通过在由氮化物III-V化合物半导体衬底构成的氮化物III-V化合物半导体衬底上生长氮化物III-V化合物半导体层（其将形成发光器件结构或器件结构）具有第一平均位错密度的晶体的形式和具有高于第一平均位错密度的第二平均位错密度并在第一区域中周期性排列的多个第二区域，器件区域被限定在氮化物III-V化合物半导体衬底使得器件区域基本上不包括第二区域，最终获得的器件的发射区域或有源区域不包括第二区域。

6. 发明授权

US07176499B2 Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and device 有权
标题翻译：半导体发光器件的制造方法，半导体发光器件，半导体器件的制造方法，半导体器件，器件的制造方法以及器件
公开(公告)号：US07176499B2
公开(公告)日：2007-02-13
申请号：US10719206
申请日：2003-11-21
申请人： Tsunenori Asatsuma , Shigetaka Tomiya , Koshi Tamamura , Tsuyoshi Tojo , Osamu Goto , Kensaku Motoki
发明人： Tsunenori Asatsuma , Shigetaka Tomiya , Koshi Tamamura , Tsuyoshi Tojo , Osamu Goto , Kensaku Motoki
IPC分类号： H01L29/22
CPC分类号： C30B25/02 , B82Y20/00 , C30B29/403 , C30B29/406 , H01L21/0254 , H01L21/0262 , H01L21/02664 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L33/32 , H01S5/0207 , H01S5/0213 , H01S5/2036 , H01S5/22 , H01S5/2201 , H01S5/2231 , H01S5/32341 , H01S5/34333 , H01S5/4031 , H01S2301/173
摘要： When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.
摘要翻译：当半导体发光器件或半导体器件通过在由氮化物III-V化合物半导体衬底构成的氮化物III-V化合物半导体衬底上生长氮化物III-V化合物半导体层（其将形成发光器件结构或器件结构）具有第一平均位错密度的晶体的形式和具有高于第一平均位错密度的第二平均位错密度并在第一区域中周期性排列的多个第二区域，器件区域被限定在氮化物III-V化合物半导体衬底使得器件区域基本上不包括第二区域，最终获得的器件的发射区域或有源区域不包括第二区域。

7. 发明申请

US20100308349A1 LIGHT-EMITTING DIODE, METHOD FOR MAKING LIGHT-EMITTING DIODE, INTEGRATED LIGHT-EMITTING DIODE AND METHOD FOR MAKING INTEGRATED LIGHT-EMITTING DIODE, METHOD FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, LIGHT SOURCE CELL UNIT, LIGHT-EMITTING DIODE BACKLIGHT, AND LIGHT-EMITTING DIODE DISPLAY AND ELECTRONIC DEVICE 审中-公开
标题翻译：发光二极管，用于制造发光二极管的方法，集成发光二极管和用于制造集成发光二极管的方法，用于生长基于氮化物的III-V族化合物半导体的方法，光源电池单元，发光二极管背光和发光二极管显示器和电子设备
公开(公告)号：US20100308349A1
公开(公告)日：2010-12-09
申请号：US12797042
申请日：2010-06-09
申请人： Akira Ohmae , Shigetaka Tomiya , Yuki Maeda , Michinori Shiomi , Takaaki Ami , Takao Miyajima , Katsunori Yanashima , Takashi Tange , Atsushi Yasuda
发明人： Akira Ohmae , Shigetaka Tomiya , Yuki Maeda , Michinori Shiomi , Takaaki Ami , Takao Miyajima , Katsunori Yanashima , Takashi Tange , Atsushi Yasuda
IPC分类号： H01L33/08 , H01L33/30
CPC分类号： H01L33/007 , H01L33/12 , H01L33/22 , H01L2224/48091 , H01L2224/48465 , H01L2924/1305 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting diode with (a) a substrate having at least one recessed portion on one main surface; (b) a sixth nitride-based III-V group compound semiconductor layer grown on the substrate without forming a space in the recessed portion; and (c) a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type formed over the sixth nitride-based III-V group compound semiconductor layer, wherein, a dislocation occurring, in the sixth nitride-based III-V group compound semiconductor layer, from an interface with a bottom surface of the recessed portion in a direction vertical to the one main surface arrives at an inclined face or its vicinity of a triangle having the bottom surface of the recessed portion as a base and bends in a direction parallel to the one main surface.
摘要翻译：一种发光二极管，其具有（a）在一个主表面上具有至少一个凹部的基板; （b）在所述基板上生长的第六氮化物基III-V族化合物半导体层，而不在所述凹部中形成空间; 和（c）在第六氮化物基上形成的第二导电类型的第一导电类型，有源层和第四氮化物基III-V族化合物半导体层的第三氮化物基III-V族化合物半导体层 III-V族化合物半导体层，其中，所述第六氮化物系III-V族化合物半导体层中的与所述凹部的底面的界面在与所述一个主面垂直的方向上的位错发生位错到达具有凹部的底面的三角形的倾斜面或其附近为基部，并且在与该一个主面平行的方向上弯曲。

8. 发明授权

US07135772B2 Nitride semiconductor laser 失效
标题翻译：氮化物半导体激光器
公开(公告)号：US07135772B2
公开(公告)日：2006-11-14
申请号：US11090340
申请日：2005-03-25
申请人： Shigetaka Tomiya , Tomonori Hino
发明人： Shigetaka Tomiya , Tomonori Hino
IPC分类号： H01L29/06 , H01L23/48 , H01L23/52 , H01L21/00
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/1082 , H01S5/3072 , H01S5/3201 , H01S5/321 , H01S5/3213 , H01S5/3409 , H01S5/34333 , H01S2301/173 , H01S2304/12 , Y10S438/962
摘要： The present invention is a nitride compound semiconductor laser, in which a cleaved end face is flat, and a breakdown of a laser end face induced during an operation can be suppressed, which consequently enables a life to be prolonged. In the nitride compound semiconductor laser, a stress concentration suppression layer is formed between an active layer and a cap layer.
摘要翻译：本发明是一种氮化物化合物半导体激光器，其中切割的端面是平坦的，并且可以抑制在操作期间引起的激光端面的击穿，从而能够延长寿命。在氮化物化合物半导体激光器中，在有源层和盖层之间形成应力集中抑制层。

9. 发明申请

US20050167836A1 Detailed description of the presently preferred embodiments 审中-公开
标题翻译：现有优选实施例的详细描述
公开(公告)号：US20050167836A1
公开(公告)日：2005-08-04
申请号：US11090749
申请日：2005-03-24
申请人： Shigetaka Tomiya , Tomonori Hino
发明人： Shigetaka Tomiya , Tomonori Hino
IPC分类号： H01S5/042 , H01S5/10 , H01S5/20 , H01S5/32 , H01S5/323 , H01S5/34 , H01S5/343 , H01L29/22
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/1082 , H01S5/3072 , H01S5/3201 , H01S5/321 , H01S5/3213 , H01S5/3409 , H01S5/34333 , H01S2301/173 , H01S2304/12 , Y10S438/962
摘要： The present invention is a nitride compound semiconductor laser, in which a cleaved end face is flat, and a breakdown of a laser end face induced during an operation can be suppressed, which consequently enables a life to be prolonged. In the nitride compound semiconductor laser, a stress concentration suppression layer is formed between an active layer and a cap layer.
摘要翻译：本发明是一种氮化物化合物半导体激光器，其中切割的端面是平坦的，并且可以抑制在操作期间引起的激光端面的击穿，从而能够延长寿命。在氮化物化合物半导体激光器中，在有源层和盖层之间形成应力集中抑制层。

10. 发明授权

US06576533B2 Method of forming semiconductor thin film of group III nitride compound semiconductor. 有权
标题翻译：形成III族氮化物化合物半导体的半导体薄膜的方法。
公开(公告)号：US06576533B2
公开(公告)日：2003-06-10
申请号：US10055885
申请日：2002-01-28
申请人： Shigetaka Tomiya , Kenji Funato
发明人： Shigetaka Tomiya , Kenji Funato
IPC分类号： H01L2120
CPC分类号： C30B25/02 , B29C43/222 , B29C43/28 , B29C59/005 , B29C59/04 , B29C59/046 , B32B37/153 , B32B38/06 , B32B2305/022 , B32B2457/20 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02636 , H01L33/007 , H01L33/0075 , H01L33/025
摘要： A semiconductor thin film includes an underlying semiconductor layer in which a plurality of facets are arranged, and a selectively grown/buried semiconductor layer formed to cover the underlying semiconductor layer, wherein the facets are formed by planes tilted with respect to the disposition plane of the underlying semiconductor layer. In this semiconductor thin film, threading-dislocations are formed in the selectively grown/buried semiconductor layer in such a manner that each of the threading-dislocations bendingly extends from one of the facets of the underlying semiconductor layer in the direction substantially along the disposition plane of the underlying semiconductor layer, being joined to another of the threading-dislocations bendingly extending from the opposed one of the facets, and bendingly extends from the joined portion in the direction crossing the disposition plane of the underlying semiconductor layer. As a result, low defect density regions are formed in the selectively grown/buried semiconductor layer. Further, since a SiO2 mask is not buried, a deviation in crystal orientation can be suppressed.
摘要翻译：半导体薄膜包括其中布置有多个面的下面的半导体层和形成为覆盖下面的半导体层的选择性地生长/掩埋的半导体层，其中所述面由相对于底层半导体层。在该半导体薄膜中，在选择性生长/掩埋的半导体层中形成穿透位错，使得每个穿透位错沿着基本上沿着配置平面的方向从底层半导体层的一个面弯曲地延伸连接到从相对的一个小面弯曲延伸的另一个穿线位错，并且在与下面的半导体层的配置平面交叉的方向上从接合部弯曲延伸。结果，在选择性生长/掩埋的半导体层中形成低缺陷密度区域。此外，由于不掩蔽SiO 2掩模，因此可以抑制晶体取向的偏差。

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