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1. 发明申请

US20100308349A1 LIGHT-EMITTING DIODE, METHOD FOR MAKING LIGHT-EMITTING DIODE, INTEGRATED LIGHT-EMITTING DIODE AND METHOD FOR MAKING INTEGRATED LIGHT-EMITTING DIODE, METHOD FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, LIGHT SOURCE CELL UNIT, LIGHT-EMITTING DIODE BACKLIGHT, AND LIGHT-EMITTING DIODE DISPLAY AND ELECTRONIC DEVICE 审中-公开
标题翻译：发光二极管，用于制造发光二极管的方法，集成发光二极管和用于制造集成发光二极管的方法，用于生长基于氮化物的III-V族化合物半导体的方法，光源电池单元，发光二极管背光和发光二极管显示器和电子设备
公开(公告)号：US20100308349A1
公开(公告)日：2010-12-09
申请号：US12797042
申请日：2010-06-09
申请人： Akira Ohmae , Shigetaka Tomiya , Yuki Maeda , Michinori Shiomi , Takaaki Ami , Takao Miyajima , Katsunori Yanashima , Takashi Tange , Atsushi Yasuda
发明人： Akira Ohmae , Shigetaka Tomiya , Yuki Maeda , Michinori Shiomi , Takaaki Ami , Takao Miyajima , Katsunori Yanashima , Takashi Tange , Atsushi Yasuda
IPC分类号： H01L33/08 , H01L33/30
CPC分类号： H01L33/007 , H01L33/12 , H01L33/22 , H01L2224/48091 , H01L2224/48465 , H01L2924/1305 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting diode with (a) a substrate having at least one recessed portion on one main surface; (b) a sixth nitride-based III-V group compound semiconductor layer grown on the substrate without forming a space in the recessed portion; and (c) a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type formed over the sixth nitride-based III-V group compound semiconductor layer, wherein, a dislocation occurring, in the sixth nitride-based III-V group compound semiconductor layer, from an interface with a bottom surface of the recessed portion in a direction vertical to the one main surface arrives at an inclined face or its vicinity of a triangle having the bottom surface of the recessed portion as a base and bends in a direction parallel to the one main surface.
摘要翻译：一种发光二极管，其具有（a）在一个主表面上具有至少一个凹部的基板; （b）在所述基板上生长的第六氮化物基III-V族化合物半导体层，而不在所述凹部中形成空间; 和（c）在第六氮化物基上形成的第二导电类型的第一导电类型，有源层和第四氮化物基III-V族化合物半导体层的第三氮化物基III-V族化合物半导体层 III-V族化合物半导体层，其中，所述第六氮化物系III-V族化合物半导体层中的与所述凹部的底面的界面在与所述一个主面垂直的方向上的位错发生位错到达具有凹部的底面的三角形的倾斜面或其附近为基部，并且在与该一个主面平行的方向上弯曲。

2. 发明授权

US07754504B2 Light-emitting diode, method for making light-emitting diode, integrated light-emitting diode and method for making integrated light-emitting diode, method for growing a nitride-based III-V group compound semiconductor, light source cell unit, light-emitting diode 失效
标题翻译：发光二极管，制造发光二极管的方法，集成发光二极管和制造集成发光二极管的方法，用于生长氮化物III-V族化合物半导体的方法，光源电池单元，发光二极管
公开(公告)号：US07754504B2
公开(公告)日：2010-07-13
申请号：US11383526
申请日：2006-05-16
申请人： Akira Ohmae , Shigetaka Tomiya , Yuki Maeda , Michinori Shiomi , Takaaki Ami , Takao Miyajima , Katsunori Yanashima , Takashi Tange , Atsushi Yasuda
发明人： Akira Ohmae , Shigetaka Tomiya , Yuki Maeda , Michinori Shiomi , Takaaki Ami , Takao Miyajima , Katsunori Yanashima , Takashi Tange , Atsushi Yasuda
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L33/12 , H01L33/22 , H01L2224/48091 , H01L2224/48465 , H01L2924/1305 , H01L2924/00014 , H01L2924/00
摘要： A method for making a light-emitting diode, which including the steps of: providing a substrate having at least one recessed portion on one main surface and growing a first nitride-based III-V group compound semiconductor layer through a state of making a triangle in section having a bottom surface of the recessed portion as a base thereby burying the recessed portion; laterally growing a second nitride-based III-V group compound semiconductor layer from the first nitride-based III-V group compound semiconductor layer over the substrate; and successively growing a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type on the second nitride-based III-V group compound semiconductor layer.
摘要翻译：一种制造发光二极管的方法，其包括以下步骤：提供在一个主表面上具有至少一个凹部的基板，并且通过制作三角形的状态生长第一氮化物基III-V族化合物半导体层所述凹部具有作为所述凹部的底面，从而埋设所述凹部; 从衬底上的第一氮化物基III-V族化合物半导体层横向生长第二氮化物基III-V族化合物半导体层; 并且在第二氮化物基III-V族化合物上依次生长第二导电类型的第一导电类型，有源层和第四氮化物基III-V族化合物半导体层的第三氮化物基III-V族化合物半导体层， V族化合物半导体层。

3. 发明申请

US20060258027A1 LIGHT-EMITTING DIODE, METHOD FOR MAKING LIGHT-EMITTING DIODE, INTEGRATED LIGHT-EMITTING DIODE AND METHOD FOR MAKING INTEGRATED LIGHT-EMITTING DIODE, METHOD FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, LIGHT SOURCE CELL UNIT, LIGHT-EMITTING DIODE BACKLIGHT, AND LIGHT-EMITTING DIODE DISPLAY AND ELECTRONIC DEVICE 失效
标题翻译：发光二极管，用于制造发光二极管的方法，集成发光二极管和用于制造集成发光二极管的方法，用于生长基于氮化物的III-V族化合物半导体的方法，光源电池单元，发光二极管背光和发光二极管显示器和电子设备
公开(公告)号：US20060258027A1
公开(公告)日：2006-11-16
申请号：US11383526
申请日：2006-05-16
申请人： Akira Ohmae , Shigetaka Tomiya , Yuki Maeda , Michinori Shiomi , Takaaki Ami , Takao Miyajima , Katsunori Yanashima , Takashi Tange , Atsushi Yasuda
发明人： Akira Ohmae , Shigetaka Tomiya , Yuki Maeda , Michinori Shiomi , Takaaki Ami , Takao Miyajima , Katsunori Yanashima , Takashi Tange , Atsushi Yasuda
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L33/12 , H01L33/22 , H01L2224/48091 , H01L2224/48465 , H01L2924/1305 , H01L2924/00014 , H01L2924/00
摘要： A method for making a light-emitting diode, which including the steps of: providing a substrate having at least one recessed portion on one main surface and growing a first nitride-based III-V group compound semiconductor layer through a state of making a triangle in section having a bottom surface of the recessed portion as a base thereby burying the recessed portion; laterally growing a second nitride-based III-V group compound semiconductor layer from the first nitride-based III-V group compound semiconductor layer over the substrate; and successively growing a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type on the second nitride-based III-V group compound semiconductor layer.
摘要翻译：一种制造发光二极管的方法，其包括以下步骤：提供在一个主表面上具有至少一个凹部的基板，并且通过制作三角形的状态生长第一氮化物基III-V族化合物半导体层所述凹部具有作为所述凹部的底面，从而埋设所述凹部; 从衬底上的第一氮化物基III-V族化合物半导体层横向生长第二氮化物基III-V族化合物半导体层; 并且在第二氮化物基III-V族化合物上依次生长第二导电类型的第一导电类型，有源层和第四氮化物基III-V族化合物半导体层的第三氮化物基III-V族化合物半导体层， V族化合物半导体层。

4. 发明申请

US20070085093A1 LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME, INTEGRATED LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME, METHOD FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, SUBSTRATE FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, LIGHT SOURCE CELL UNIT, LIGHT-EMITTING DIODE BACKLIGHT, LIGHT-EMITTING DIODE ILLUMINATING DEVICE, LIGHT-EMITTING DIODE DISPLAY AND ELECTRONIC INSTRUMENT, ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：发光二极管及其制造方法，集成发光二极管及其制造方法，用于生长基于氮化物的III-V族化合物半导体的方法，用于生长基于氮化物的III-V族化合物半导体的基板，光光源单元，发光二极管背光，发光二极管照明装置，发光二极管显示器和电子仪器，电子设备及其制造方法
公开(公告)号：US20070085093A1
公开(公告)日：2007-04-19
申请号：US11533965
申请日：2006-09-21
申请人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobukata Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
发明人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobukata Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/0025 , C30B23/04 , C30B25/04 , C30B29/403 , H01L21/02439 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02647 , H01L27/15 , H01L33/007 , H01L33/0079 , H01L33/08 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/46
摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.
摘要翻译：一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层第二导电类型的半导体层。

5. 发明授权

US09034738B2 Method for growing a nitride-based III-V Group compound semiconductor 有权
标题翻译：用于生长氮化物III-V族化合物半导体的方法
公开(公告)号：US09034738B2
公开(公告)日：2015-05-19
申请号：US11533965
申请日：2006-09-21
申请人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobukata Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
发明人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobukata Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
IPC分类号： H01L21/20 , H01L21/36 , H01L21/00 , C30B23/04 , C30B25/04 , C30B29/40 , H01L21/02 , H01L33/00 , H01L33/08 , H01L33/12 , H01L33/22 , H01L33/46
CPC分类号： H01L33/0025 , C30B23/04 , C30B25/04 , C30B29/403 , H01L21/02439 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02647 , H01L27/15 , H01L33/007 , H01L33/0079 , H01L33/08 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/46
摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.
摘要翻译：一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层第二导电类型的半导体层。

6. 发明授权

US08859401B2 Method for growing a nitride-based III-V group compound semiconductor 有权
标题翻译：用于生长氮化物III-V族化合物半导体的方法
公开(公告)号：US08859401B2
公开(公告)日：2014-10-14
申请号：US13102404
申请日：2011-05-06
申请人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobutaka Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
发明人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobutaka Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
IPC分类号： H01L21/20 , H01L21/36 , H01L21/00 , C30B23/04 , C30B25/04 , C30B29/40 , H01L21/02 , H01L33/00 , H01L33/08 , H01L33/12 , H01L33/22 , H01L33/46
CPC分类号： H01L33/0025 , C30B23/04 , C30B25/04 , C30B29/403 , H01L21/02439 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02647 , H01L27/15 , H01L33/007 , H01L33/0079 , H01L33/08 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/46
摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.
摘要翻译：一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层第二导电类型的半导体层。

7. 发明申请

US20110212559A1 LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME, INTEGRATED LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME, METHOD FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, SUBSTRATE FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, LIGHT SOURCE CELL UNIT, LIGHT-EMITTING DIODE BACKLIGHT, LIGHT-EMITTING DIODE ILLUMINATING DEVICE, LIGHT-EMITTING DIODE DISPLAY AND ELECTRONIC INSTRUMENT, ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光二极管及其制造方法，集成发光二极管及其制造方法，用于生长基于氮化物的III-V族化合物半导体的方法，用于生长基于氮化物的III-V族化合物半导体的基板，光光源单元，发光二极管背光，发光二极管照明装置，发光二极管显示器和电子仪器，电子设备及其制造方法
公开(公告)号：US20110212559A1
公开(公告)日：2011-09-01
申请号：US13102404
申请日：2011-05-06
申请人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobutaka Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
发明人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobutaka Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
IPC分类号： H01L33/32
CPC分类号： H01L33/0025 , C30B23/04 , C30B25/04 , C30B29/403 , H01L21/02439 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02647 , H01L27/15 , H01L33/007 , H01L33/0079 , H01L33/08 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/46
摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.
摘要翻译：一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层第二导电类型的半导体层。

8. 发明申请

US20130022070A1 SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20130022070A1
公开(公告)日：2013-01-24
申请号：US13521678
申请日：2011-11-11
申请人： Takashi Tange , Shigetaka Tomiya
发明人： Takashi Tange , Shigetaka Tomiya
IPC分类号： H01S5/02 , H01L33/44
CPC分类号： H01S5/0282 , B82Y20/00 , H01S5/0021 , H01S5/028 , H01S5/22 , H01S5/343
摘要： The present invention relates to a semiconductor laser device capable of reliably suppressing degradation of an end face due to interface oxidation and distortion application, and to a manufacturing method of the same.The semiconductor laser device has a laser structure portion 107 having opposite resonator faces 108 and 109, and protecting films 110 and 120 formed on at least one of the opposite resonator end faces, wherein the protecting films 110 and 120 are formed of nitride dielectric films having a multistage structure including amorphous layers 111 and 121 and polycrystal layers 112 and 122 in crystal structure, respectively, from aside in contact with the resonator faces.
摘要翻译：本发明涉及能够可靠地抑制由于界面氧化和变形应用引起的端面劣化的半导体激光器件及其制造方法。半导体激光装置具有激光结构部分107，其具有相对的谐振器面108和109以及形成在至少一个相对的谐振器端面上的保护膜110和120，其中保护膜110和120由氮化物绝缘膜形成，包括晶体结构中的非晶层111和121以及分别与谐振器面接触的多晶层112和122的多级结构。

9. 发明授权

US06667252B2 Method of manufacturing compound semiconductor substrate 失效
公开(公告)号：US06667252B2
公开(公告)日：2003-12-23
申请号：US10114057
申请日：2002-04-03
申请人： Takao Miyajima , Shigetaka Tomiya , Akira Usui
发明人： Takao Miyajima , Shigetaka Tomiya , Akira Usui
IPC分类号： H01L2126
CPC分类号： H01L21/02389 , C30B29/60 , C30B33/00 , H01L21/02378 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , Y10S438/94 , Y10S438/977
摘要： A compound semiconductor substrate is manufactured by forming a higher-quality compound semiconductor layer having a smaller number of crystalline defects on a single-crystal substrate, and removing the single-crystal substrate without causing damage to the compound semiconductor layer. The method comprises the steps of forming the compound semiconductor layer (first, second and third compound semiconductor layers) on the single-crystal substrate (sapphire substrate) through crystal growth so as to partially have a space between the compound semiconductor layer and the single-crystal substrate; and removing the compound semiconductor layer from the sapphire substrate by irradiating the compound semiconductor layer from a side of the sapphire substrate with a laser beam passing through the single-crystal substrate and being absorbed in the compound semiconductor layer to melt an interface between the single-crystal substrate and the compound semiconductor.

10. 发明申请

US20080217632A1 Gan-Based III-V Compound Semiconductor Light-Emitting Element and Method for Manufacturing Thereof 审中-公开
标题翻译：赣基III-V复合半导体发光元件及其制造方法
公开(公告)号：US20080217632A1
公开(公告)日：2008-09-11
申请号：US10569877
申请日：2004-08-26
申请人： Shigetaka Tomiya , Osamu Goto
发明人： Shigetaka Tomiya , Osamu Goto
IPC分类号： H01L33/00 , H01L21/02
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/2009 , H01S5/3407
摘要： A GaN-based III-V group compound semiconductor light-emitting element having high light-emitting efficiency and high reliability at a light-emitting wavelength of 440 nm or more is provided.A GaN-based semiconductor laser element 10 has a laminated structure of: a stripe-shaped convex portion 18 made of a surface layer of a sapphire substrate 12, a buffer layer 14 and a first GaN layer 16, and on the sapphire substrate, a second GaN layer 20, an n-side cladding layer 22, an n-side guide layer 24, an active layer 26, a deterioration prevention layer 28, a p-side guide layer 30, a p-side cladding layer 32 and a p-side contact layer 34. The active layer is formed of a quantum well structure including a GaInN barrier layer 36 and a GaInN well layer 38, and a planar crystal defect prevention layer 40 made of an AlGaN layer is provided on the upper surface or lower surface, or between both the surfaces of the barrier layer and the well layer. Upper portions of the p-side contact layer and the p-side cladding layer are formed as a stripe-shaped ridge 42 and a mesa 44 is formed in parallel with the ridge.
摘要翻译：提供了在440nm以上的发光波长下具有高发光效率和高可靠性的GaN系III-V族化合物半导体发光元件。 GaN系半导体激光元件10具有如下层叠结构：由蓝宝石基板12的表面层，缓冲层14和第一GaN层16构成的条状凸部18，在蓝宝石基板上，第二GaN层20，n侧包层22，n侧引导层24，有源层26，劣化防止层28，p侧引导层30，p侧覆层32和p 有源层由包括GaInN势垒层36和GaInN阱层38的量子阱结构形成，并且在上表面或更低层上设置由AlGaN层制成的平面晶体缺陷防止层40 表面，或在阻挡层和阱层的两个表面之间。 p侧接触层和p侧包覆层的上部形成为条状的脊部42，并且与脊部平行地形成台面44。

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