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1. 发明授权

US6163062A Semiconductor device having a metallic fuse member and cutting method thereof with laser light 失效
标题翻译：具有金属熔断元件的半导体器件及其激光切割方法
公开(公告)号：US6163062A
公开(公告)日：2000-12-19
申请号：US71158
申请日：1998-05-04
申请人： Shigeru Shiratake , Hideki Genjo , Yasuhiro Ido , Atsushi Hachisuka , Koji Taniguchi
发明人： Shigeru Shiratake , Hideki Genjo , Yasuhiro Ido , Atsushi Hachisuka , Koji Taniguchi
IPC分类号： H01L21/82 , H01L21/768 , H01L23/525 , H01L29/00
CPC分类号： H01L23/5258 , H01L21/76888 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device has a plurality of fuse members (1a, 1b) composed of a metal that can be cut by laser light (4), disposed over a semiconductor substrate (5). The length L of the fuse members (1a, 1b) is smaller than a value obtained by subtracting an alignment error .alpha. of the laser light (4) from a spot diameter D of the laser light (4), i.e., the value (D-.alpha.). The fuse members (1a, 1b) are spaced a distance l larger than a value obtained by adding the alignment error .alpha. to the half of the spot diameter D, i.e., the value (D/2+.alpha.).
摘要翻译：一种半导体器件具有多个由可由激光（4）切割的金属构成的保险丝构件（1a，1b），设置在半导体衬底（5）上。保险丝构件（1a，1b）的长度L小于从激光（4）的光斑直径D减去激光（4）的取向误差α所得到的值，即值（D - α ）。保险丝构件（1a，1b）的间隔距离l大于通过将对准误差α加到光斑直径D的一半，即值（D / 2 +α）而获得的值。

2. 发明授权

US07115966B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07115966B2
公开(公告)日：2006-10-03
申请号：US10375125
申请日：2003-02-28
申请人： Yasuhiro Ido , Kazushi Kono , Takeshi Iwamoto
发明人： Yasuhiro Ido , Kazushi Kono , Takeshi Iwamoto
IPC分类号： H01L29/00 , H01L29/73
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： On a semiconductor substrate a silicon oxide film is formed and provided with a recess. In the recess a reflector layer of copper is disposed as a blocking layer with a barrier metal posed therebetween. The reflector layer of copper is covered with a silicon oxide film and thereon a fuse region provided with a plurality of fuses is provided. The reflector layer of copper has a plane of reflection recessed downward to reflect a laser beam. The reflector layer of copper is arranged to overlap substantially the entirety of the fuse region, as seen in a plane. A laser beam radiated to blow the fuse can have a reduced effect on a vicinity of the fuse region. A semiconductor device reduced in size can be obtained.
摘要翻译：在半导体衬底上形成氧化硅膜并设置有凹部。在凹部中，铜的反射器层被设置为阻挡层，其间具有阻挡金属。铜的反射层被氧化硅膜覆盖，并且在其上提供设有多个保险丝的保险丝区域。铜的反射层具有向下凹入的反射平面以反射激光束。铜的反射器层布置成基本上与整个熔断器区域重叠，如在平面中所见。照射熔断器的激光束可以对保险丝区域的附近产生减小的影响。可以获得尺寸减小的半导体装置。

3. 发明授权

US06362514B1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06362514B1
公开(公告)日：2002-03-26
申请号：US09352340
申请日：1999-07-13
申请人： Yasuhiro Ido , Takeshi Iwamoto , Rui Toyota
发明人： Yasuhiro Ido , Takeshi Iwamoto , Rui Toyota
IPC分类号： H01L2900
CPC分类号： H01L23/5258 , H01L23/53228 , H01L2924/0002 , Y10S257/91 , H01L2924/00
摘要： There is described a semiconductor device having a copper fuse which prevents damage to a silicon substrate beneath the copper fuse, which would otherwise be caused by a laser beam radiated to blow the copper fuse. A light absorbing layer is formed on the copper fuse layer from material whose light absorption coefficient is greater than that of a copper wiring layer. Light absorbed by the light absorbing layer is transmitted, through heat conduction, to the copper wiring layer beneath the light absorbing layer and further to a barrier metal layer beneath the copper wiring layer. Even when the widely-used conventional laser beam of infrared wavelength is used, the copper fuse can be blown. Since a guard layer is formed below the fuse layer, there can be prevented damage to the silicon substrate, which would otherwise be caused by exposure to the laser beam of visible wavelength. Therefore, the copper fuse can be blown even by use of a laser beam of visible wavelength whose light absorption coefficient for copper is high.
摘要翻译：描述了具有铜熔丝的半导体器件，其防止对铜熔丝下方的硅衬底的损坏，否则这将由被辐射以吹制铜熔丝的激光束引起。光吸收层由光吸收系数大于铜布线层的材料形成在铜熔丝层上。由光吸收层吸收的光通过热传导传递到光吸收层下面的铜布线层，并且进一步传输到铜布线层下面的阻挡金属层。即使使用广泛使用的红外波长的常规激光束，也可以熔断铜熔丝。由于保护层形成在熔丝层的下面，所以可以防止对硅衬底的损坏，否则这将因暴露于可见波长的激光束而引起。因此，即使通过使用铜的光吸收系数高的可见波长的激光束也能够熔断铜熔丝。

4. 发明授权

US5998986A Method of cleaning probe of probe card and probe-cleaning apparatus 失效
标题翻译：清洁探针卡和探头清洁装置探头的方法
公开(公告)号：US5998986A
公开(公告)日：1999-12-07
申请号：US867423
申请日：1997-06-06
申请人： Yasuhiro Ido
发明人： Yasuhiro Ido
IPC分类号： G01R1/073 , B08B7/00 , H01J37/32 , H01L21/66 , G01R1/06 , B08B5/00 , C23F4/00 , H05H1/00
CPC分类号： H01J37/32192 , B08B7/0035 , H01J37/3266
摘要： A method for cleaning probes of a probe card used for testing semiconductor wafers and an apparatus for carrying out the cleaning method. Microwave energy is supplied to and a magnetic field is impressed on a reaction gas to generate a plasma; a magnetic field source generates a magnetic field, funneling and directing the plasma toward a zone opposite a probe card; a baffle funnels the plasma toward a zone where probes of the probe card are present; and a voltage source impresses controlled DC voltages onto the probes so that the energy of ions incident on the probes exceeds a threshold energy for sputtering aluminum but not a threshold energy for sputtering tungsten.
摘要翻译：用于清洁用于测试半导体晶片的探针卡的探针的方法和用于执行清洁方法的装置。提供微波能量并向反应气体施加磁场以产生等离子体; 磁场源产生磁场，漏斗并将等离子体引向与探针卡相对的区域; 挡板使等离子体向探针卡的探针存在的区域漏出; 并且电压源将受控的DC电压施加到探针上，使得入射在探针上的离子的能量超过用于溅射铝的阈值能量，而不是用于溅射钨的阈值能量。

5. 发明申请

US20070102786A1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US20070102786A1
公开(公告)日：2007-05-10
申请号：US11584513
申请日：2006-10-23
申请人： Yasuhiro Ido , Takeshi Iwamoto
发明人： Yasuhiro Ido , Takeshi Iwamoto
IPC分类号： H01L29/00
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device of the present invention comprises: a substrate; a plurality of wiring layers formed over the substrate; a fuse formed in an uppermost one of the plurality of wiring layers; a first insulating film made up of a single film and formed on the uppermost wiring layer such that the first insulating film is in contact with a surface of the fuse; and a second insulating film formed on the first insulating film; wherein the second insulating film has an opening therein formed above a fuse region of the uppermost wiring layer such that only the first insulating film exists above the fuse region, the fuse region including the fuse and being irradiated with a laser beam when the fuse is blown.
摘要翻译：本发明的半导体器件包括：衬底; 形成在所述基板上的多个布线层; 形成在所述多个布线层的最上面的保险丝; 由单个膜构成的第一绝缘膜，形成在所述最上布线层上，使得所述第一绝缘膜与所述保险丝的表面接触; 以及形成在所述第一绝缘膜上的第二绝缘膜; 其中所述第二绝缘膜在其最上布线层的熔丝区域的上方形成有开口，使得只有所述第一绝缘膜存在于所述熔丝区域的上方，所述熔丝区域包括所述熔丝并且当所述熔丝被熔断时被照射激光束。

6. 发明申请

US20060076642A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060076642A1
公开(公告)日：2006-04-13
申请号：US11237772
申请日：2005-09-29
申请人： Yasuhiro Ido , Takeshi Iwamoto
发明人： Yasuhiro Ido , Takeshi Iwamoto
IPC分类号： H01L29/00
CPC分类号： H01L23/53238 , H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a semiconductor device comprising: a substrate; a first insulating film formed on a principal surface of the substrate; a second insulating film formed on the first insulating film; a plurality of fuses formed on the second insulating film; and a blocking layer disposed in the first and second insulating films, the blocking layer being formed of a material capable of reflecting laser light irradiated to blow the plurality of fuses. The blocking layer overlaps a region in which the plurality of fuses are formed when viewed from the principal surface of the substrate. The plurality of fuses may be each formed in two or more insulating film layers laminated to one another on the second insulating film.
摘要翻译：本发明提供一种半导体器件，包括：衬底; 形成在所述基板的主表面上的第一绝缘膜; 形成在所述第一绝缘膜上的第二绝缘膜; 形成在所述第二绝缘膜上的多个保险丝; 以及设置在所述第一和第二绝缘膜中的阻挡层，所述阻挡层由能够反射照射以吹动所述多个保险丝的激光的材料形成。当从基板的主表面观察时，阻挡层与形成有多个熔丝的区域重叠。多个保险丝可以分别形成在第二绝缘膜上彼此层压的两个或更多个绝缘膜层中。

7. 发明授权

US07728406B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07728406B2
公开(公告)日：2010-06-01
申请号：US11584513
申请日：2006-10-23
申请人： Yasuhiro Ido , Takeshi Iwamoto
发明人： Yasuhiro Ido , Takeshi Iwamoto
IPC分类号： H01L29/00
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device of the present invention comprises: a substrate; a plurality of wiring layers formed over the substrate; a fuse formed in an uppermost one of the plurality of wiring layers; a first insulating film made up of a single film and formed on the uppermost wiring layer such that the first insulating film is in contact with a surface of the fuse; and a second insulating film formed on the first insulating film; wherein the second insulating film has an opening therein formed above a fuse region of the uppermost wiring layer such that only the first insulating film exists above the fuse region, the fuse region including the fuse and being irradiated with a laser beam when the fuse is blown.
摘要翻译：本发明的半导体器件包括：衬底; 形成在所述基板上的多个布线层; 形成在所述多个布线层的最上面的保险丝; 由单个膜构成的第一绝缘膜，形成在所述最上布线层上，使得所述第一绝缘膜与所述保险丝的表面接触; 以及形成在所述第一绝缘膜上的第二绝缘膜; 其中所述第二绝缘膜在其最上布线层的熔丝区域的上方形成有开口，使得只有所述第一绝缘膜存在于所述熔丝区域的上方，所述熔丝区域包括所述熔丝并且当所述熔丝被熔断时被照射激光束。

8. 发明申请

US20070063225A1 Semiconductor device, and method for manufacturing semiconductor device 审中-公开
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US20070063225A1
公开(公告)日：2007-03-22
申请号：US11602955
申请日：2006-11-22
申请人： Yasuhiro Ido , Takeshi Iwamoto
发明人： Yasuhiro Ido , Takeshi Iwamoto
IPC分类号： H01L27/10 , H01L29/00
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a substrate, a fuse that can be blown by the radiation of light formed above the substrate, and insulating films formed on the fuse and on the substrate. One of the insulating films includes a flat portion formed on the substrate and the surface thereof is higher than the surface of the fuse, and a protruded portion formed on the fuse continuously from the flat portion, and protruded from the surface of the flat portion.
摘要翻译：半导体器件包括衬底，可以通过在衬底上形成的光的辐射而被吹制的熔丝以及形成在熔丝和衬底上的绝缘膜。绝缘膜中的一个包括形成在基板上的平坦部分，其表面高于熔丝的表面，并且从平坦部分连续地形成在熔丝上并从平坦部分的表面突出的突出部分。

9. 发明申请

US20070048346A1 Insect proof boards 失效
标题翻译：防虫板
公开(公告)号：US20070048346A1
公开(公告)日：2007-03-01
申请号：US11509080
申请日：2006-08-24
申请人： Yasuhiro Ido
发明人： Yasuhiro Ido
IPC分类号： A01N25/00
CPC分类号： A01N25/34 , A01N53/00 , Y10T428/662 , A01N25/04 , A01N2300/00
摘要： The object of the present invention is to impart lasting excellent insect proof property to boards. According to the present invention, an insecticidal treatment liquid which contains an insecticide in an aqueous dispersion of colloidal silica is applied to the surface of a coat on a substrate applied with coating. Namely, according to the present invention, since a coating composition is not used to fix the insecticide to the surface of the coat, the insecticide is not diluted with a resin in the coating composition.
摘要翻译：本发明的目的是赋予板持久优异的防虫性。根据本发明，在涂布有涂层的基材上的涂层表面上涂布含有杀虫剂的胶体二氧化硅水分散体中的杀虫剂处理液。也就是说，根据本发明，由于涂料组合物不用于将杀虫剂固定在涂层的表面上，所以在涂料组合物中不用树脂稀释杀虫剂。

10. 发明授权

US07709016B2 Insect proof boards 失效
标题翻译：防虫板
公开(公告)号：US07709016B2
公开(公告)日：2010-05-04
申请号：US11509080
申请日：2006-08-24
申请人： Yasuhiro Ido
发明人： Yasuhiro Ido
IPC分类号： A01N25/34 , A01N25/00 , B27K3/15
CPC分类号： A01N25/34 , A01N53/00 , Y10T428/662 , A01N25/04 , A01N2300/00
摘要： The object of the present invention is to impart lasting excellent insect proof property to boards.According to the present invention, an insecticidal treatment liquid which contains an insecticide in an aqueous dispersion of colloidal silica is applied to the surface of a coat on a substrate applied with coating. Namely, according to the present invention, since a coating composition is not used to fix the insecticide to the surface of the coat, the insecticide is not diluted with a resin in the coating composition.
摘要翻译：本发明的目的是赋予板持久优异的防虫性。根据本发明，在涂布有涂层的基材上的涂层表面上涂布含有杀虫剂的胶体二氧化硅水分散体中的杀虫剂处理液。也就是说，根据本发明，由于涂料组合物不用于将杀虫剂固定在涂层的表面上，所以在涂料组合物中不用树脂稀释杀虫剂。

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