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    • 5. 发明授权
    • Frame buffer memory for display
    • 帧缓冲存储器用于显示
    • US4980765A
    • 1990-12-25
    • US464214
    • 1990-01-12
    • Yoshimichi KudoShigeru Komatsu
    • Yoshimichi KudoShigeru Komatsu
    • G09G5/00G06F12/02G06T1/60G09G5/14G09G5/34G09G5/39G09G5/397
    • G09G5/14G09G5/397G09G2360/126
    • A frame buffer memory capable of storing video data for plural frames of pictures with memory areas irrelevant to the display being reduced to a minimum, which video data consist of a number of pixels unequal to a power of "2" in the vertical and horizontal directions, respectively. The frame buffer memory is realized by using multi-port video RAMs and includes a plurality of regions for display and auxiliary regions. The regions for display includes at least first and second display regions which partially overlap each other. The auxiliary regions store the video data contained in the overlapping portion (overlapping region) of the first and second display regions, the video data stored in the auxiliary region being transferred to the overlapping region as occasion requires.
    • 能够将与图像无关的存储区域的多帧图像的视频数据的帧缓冲存储器减少到最小,哪个视频数据由不同于垂直和水平方向上的“2”的功率的像素数组成 , 分别。 帧缓冲存储器是通过使用多端口视频RAM来实现的,并且包括用于显示和辅助区域的多个区域。 用于显示的区域至少包括彼此部分重叠的至少第一和第二显示区域。 辅助区域存储包含在第一和第二显示区域的重叠部分(重叠区域)中的视频数据,根据需要,存储在辅助区域中的视频数据被传送到重叠区域。
    • 7. 发明授权
    • Semiconductor device
    • 半导体器件
    • US4484212A
    • 1984-11-20
    • US335712
    • 1981-12-29
    • Shigeru KomatsuMichio NakamuraKatsuji Fujita
    • Shigeru KomatsuMichio NakamuraKatsuji Fujita
    • H01L27/04H01L21/768H01L21/822H01L23/522H01L23/58H01L27/08H01L29/84H01L23/48H01L27/02H01L29/44
    • H01L23/585H01L23/522H01L27/0802H01L2924/0002Y10S257/925Y10S73/04
    • A semiconductor device comprising a semiconductor substrate having at least two resistor elements, wherein said resistor elements have a specific resistance ratio relative to each other, an insulation layer formed on a major surface of said semiconductor substrate, a circuit wiring layer formed on said insulation layer covering a portion of said insulation layer which corresponds to at least one of said resistor elements, and a dummy wiring layer made of the same material as that of the circuit wiring layer and formed on the insulation layer covering that portion of said insulation layer which corresponds to the resistor element or elements not covered by said circuit wiring layer, and where the ratio of an overlapping area of one resistor element in said circuit wiring layer and an overlapping area of the other resistor element and said dummy wiring layer is equal to a resistance ratio of said resistor elements.
    • 一种半导体器件,包括具有至少两个电阻元件的半导体衬底,其中所述电阻元件相对于彼此具有比电阻比,形成在所述半导体衬底的主表面上的绝缘层,形成在所述绝缘层上的电路布线层 覆盖对应于所述电阻元件中的至少一个的所述绝缘层的一部分,以及由与所述电路布线层相同的材料制成的虚拟布线层,并形成在所述绝缘层上,覆盖所述绝缘层对应的部分 连接到所述电路布线层未被覆盖的电阻元件或元件,并且其中所述电路布线层中的一个电阻元件的重叠区域与所述另一个电阻元件与所述伪布线层的重叠区域的重叠面积之比等于电阻 所述电阻元件的比例。
    • 8. 发明授权
    • Polysilicon emitter and base contacts separated by lightly doped poly
separator
    • 多晶硅发射极和基极触点由轻掺杂的多分离器分离
    • US4451844A
    • 1984-05-29
    • US289961
    • 1981-08-04
    • Shigeru KomatsuMichio Nakamura
    • Shigeru KomatsuMichio Nakamura
    • H01L29/73H01L21/285H01L21/331H01L27/06H01L29/417H01L29/45H01L23/50H01L23/52
    • H01L21/28525H01L27/06H01L29/417H01L29/456
    • A semiconductor device comprising a semiconductor substrate of an N conductivity type; an insulation layer of a predetermined pattern for selectively covering the substrate; a first region of a P conductivity type formed in that area of the substrate which is surrounded by the insulation layer; a second region of the P.sup.+ conductivity type having a high impurity concentration and formed in the first region; a third region of the N conductivity type formed in the first region; a polycrystalline silicon layer formed on the major surface of the substrate, said polycrystalline silicon layer comprising a first portion of the P conductivity type contacting the second region, a second portion of the N conductivity type contacting the third region and a third portion contacting the first region, said first and second portions constituting first and second contacting electrodes, respectively, and the third portion having a predetermined impurity concentration and constituting a separation portion for insulating the first and second portions from each other.
    • 一种半导体器件,包括N导电类型的半导体衬底; 用于选择性地覆盖衬底的预定图案的绝缘层; 形成在由绝缘层包围的基板的该区域中的P导电型的第一区域; 形成在第一区域中的具有高杂质浓度的P +导电型的第二区域; 形成在第一区域中的N导电类型的第三区域; 形成在所述基板的主表面上的多晶硅层,所述多晶硅层包括接触所述第二区域的P导电类型的第一部分,与所述第三区域接触的所述N导电类型的第二部分和接触所述第一区域的第三部分 所述第一和第二部分分别构成第一和第二接触电极,第三部分具有预定的杂质浓度,并构成用于使第一和第二部分彼此绝缘的分离部分。