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1. 发明授权

US4577397A Method for manufacturing a semiconductor device having vertical and lateral transistors 失效
标题翻译：制造具有垂直和横向晶体管的半导体器件的方法
公开(公告)号：US4577397A
公开(公告)日：1986-03-25
申请号：US689966
申请日：1985-01-09
申请人： Shigeru Komatsu , Hiroshi Inoue , Michio Nakamura
发明人： Shigeru Komatsu , Hiroshi Inoue , Michio Nakamura
IPC分类号： H01L29/73 , H01L21/033 , H01L21/331 , H01L21/761 , H01L21/762 , H01L27/082 , H01L29/72 , H01L21/425
CPC分类号： H01L29/72 , H01L21/033 , H01L21/76202 , H01L27/0821
摘要： The present invention provides a semiconductor device which includes a thick countersunk oxide layer selectively formed by the LOCOS process on the surface of a silicon body, openings formed in this oxide layer, and semiconductor element regions formed by the introduction of an impurity in the silicon body through these openings.The semiconductor element regions preferably comprise the emitter region and the collector region of the lateral transistor.
摘要翻译：本发明提供一种半导体器件，其包括通过LOCOS工艺在硅体表面上选择性地形成的厚的沉积氧化物层，在该氧化物层中形成的开口，以及通过在硅体中引入杂质形成的半导体元件区域通过这些开口。半导体元件区优选地包括横向晶体管的发射极区域和集电极区域。

2. 发明授权

US4484212A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4484212A
公开(公告)日：1984-11-20
申请号：US335712
申请日：1981-12-29
申请人： Shigeru Komatsu , Michio Nakamura , Katsuji Fujita
发明人： Shigeru Komatsu , Michio Nakamura , Katsuji Fujita
IPC分类号： H01L27/04 , H01L21/768 , H01L21/822 , H01L23/522 , H01L23/58 , H01L27/08 , H01L29/84 , H01L23/48 , H01L27/02 , H01L29/44
CPC分类号： H01L23/585 , H01L23/522 , H01L27/0802 , H01L2924/0002 , Y10S257/925 , Y10S73/04
摘要： A semiconductor device comprising a semiconductor substrate having at least two resistor elements, wherein said resistor elements have a specific resistance ratio relative to each other, an insulation layer formed on a major surface of said semiconductor substrate, a circuit wiring layer formed on said insulation layer covering a portion of said insulation layer which corresponds to at least one of said resistor elements, and a dummy wiring layer made of the same material as that of the circuit wiring layer and formed on the insulation layer covering that portion of said insulation layer which corresponds to the resistor element or elements not covered by said circuit wiring layer, and where the ratio of an overlapping area of one resistor element in said circuit wiring layer and an overlapping area of the other resistor element and said dummy wiring layer is equal to a resistance ratio of said resistor elements.
摘要翻译：一种半导体器件，包括具有至少两个电阻元件的半导体衬底，其中所述电阻元件相对于彼此具有比电阻比，形成在所述半导体衬底的主表面上的绝缘层，形成在所述绝缘层上的电路布线层覆盖对应于所述电阻元件中的至少一个的所述绝缘层的一部分，以及由与所述电路布线层相同的材料制成的虚拟布线层，并形成在所述绝缘层上，覆盖所述绝缘层对应的部分连接到所述电路布线层未被覆盖的电阻元件或元件，并且其中所述电路布线层中的一个电阻元件的重叠区域与所述另一个电阻元件与所述伪布线层的重叠区域的重叠面积之比等于电阻所述电阻元件的比例。

3. 发明授权

US4451844A Polysilicon emitter and base contacts separated by lightly doped poly separator 失效
标题翻译：多晶硅发射极和基极触点由轻掺杂的多分离器分离
公开(公告)号：US4451844A
公开(公告)日：1984-05-29
申请号：US289961
申请日：1981-08-04
申请人： Shigeru Komatsu , Michio Nakamura
发明人： Shigeru Komatsu , Michio Nakamura
IPC分类号： H01L29/73 , H01L21/285 , H01L21/331 , H01L27/06 , H01L29/417 , H01L29/45 , H01L23/50 , H01L23/52
CPC分类号： H01L21/28525 , H01L27/06 , H01L29/417 , H01L29/456
摘要： A semiconductor device comprising a semiconductor substrate of an N conductivity type; an insulation layer of a predetermined pattern for selectively covering the substrate; a first region of a P conductivity type formed in that area of the substrate which is surrounded by the insulation layer; a second region of the P.sup.+ conductivity type having a high impurity concentration and formed in the first region; a third region of the N conductivity type formed in the first region; a polycrystalline silicon layer formed on the major surface of the substrate, said polycrystalline silicon layer comprising a first portion of the P conductivity type contacting the second region, a second portion of the N conductivity type contacting the third region and a third portion contacting the first region, said first and second portions constituting first and second contacting electrodes, respectively, and the third portion having a predetermined impurity concentration and constituting a separation portion for insulating the first and second portions from each other.
摘要翻译：一种半导体器件，包括N导电类型的半导体衬底; 用于选择性地覆盖衬底的预定图案的绝缘层; 形成在由绝缘层包围的基板的该区域中的P导电型的第一区域; 形成在第一区域中的具有高杂质浓度的P +导电型的第二区域; 形成在第一区域中的N导电类型的第三区域; 形成在所述基板的主表面上的多晶硅层，所述多晶硅层包括接触所述第二区域的P导电类型的第一部分，与所述第三区域接触的所述N导电类型的第二部分和接触所述第一区域的第三部分所述第一和第二部分分别构成第一和第二接触电极，第三部分具有预定的杂质浓度，并构成用于使第一和第二部分彼此绝缘的分离部分。

4. 发明授权

US4438556A Method of forming doped polycrystalline silicon pattern by selective implantation and plasma etching of undoped regions 失效
标题翻译：通过选择性注入和未掺杂区域的等离子体蚀刻形成掺杂多晶硅图案的方法
公开(公告)号：US4438556A
公开(公告)日：1984-03-27
申请号：US332973
申请日：1981-12-21
申请人： Shigeru Komatsu , Michio Nakamura
发明人： Shigeru Komatsu , Michio Nakamura
IPC分类号： H01L21/3213 , H01L21/3215 , H01L21/302 , C23F1/02 , H01L21/225
CPC分类号： H01L21/32137 , H01L21/32155 , Y10S438/924
摘要： A process of forming a polycrystalline silicon pattern which is used for a semiconductor device, wherein the degree of side etching is low and the obtained pattern is of high precision. Firstly, a polycrystalline silicon layer is deposited on a semiconductor substrate or on an insulating film which is formed on a semiconductor substrate. An impurity is selectively ion-implanted with high concentration into the region in the layer which is to remain as a polycrystalline silicon pattern. Finally, whole of the polycrystalline silicon layer into which the impurity is thus selectively ion-implanted is plasma-etched to etch off the areas into which the impurity is not ion-implanted.
摘要翻译：形成用于半导体器件的多晶硅图案的工艺，其中侧蚀刻度低，并且所获得的图案具有高精度。首先，在半导体基板上或形成在半导体基板上的绝缘膜上沉积多晶硅层。选择性地将杂质离子注入到要保留为多晶硅图案的层中的区域中。最后，等离子体刻蚀了杂质从而选择性地离子注入的整个多晶硅层，以蚀刻离子注入杂质的区域。

5. 发明授权

US09434371B2 Control device of hybrid vehicle 有权
标题翻译：混合动力汽车控制装置
公开(公告)号：US09434371B2
公开(公告)日：2016-09-06
申请号：US13617592
申请日：2012-09-14
申请人： Koichiro Muta , Michio Nakamura
发明人： Koichiro Muta , Michio Nakamura
IPC分类号： B60W20/00 , B60W10/06 , B60W10/08 , B60K6/445 , B60W30/18 , B60W30/188
CPC分类号： B60W20/15 , B60K6/445 , B60W10/06 , B60W10/08 , B60W20/17 , B60W30/18054 , B60W30/1882 , B60W2510/188 , B60W2710/083 , Y02T10/6239 , Y02T10/6286
摘要： An operation line is set on the basis of a shift position and a brake pedal position, from among a plurality of operation lines in which a degree of avoidance of an abnormal noise generation region from a fuel-economy optimal operation line becomes smaller as a degree to which travel of the vehicle is restricted becomes greater. An engine and a motor are controlled by setting a target operation point of the engine using the set operation line, and by setting a torque instruction of the motor.
摘要翻译：基于换档位置和制动踏板位置设置操作线，其中来自燃料经济性最佳操作线的异常噪声产生区域的避免程度的多个操作线路之间的程度越小，车辆的行驶受到限制的行驶更大。通过使用设定的操作线设定发动机的目标操作点，并通过设定电动机的转矩指令来控制发动机和电动机。

6. 发明授权

US07978600B2 Electronic control unit with a plurality of control circuits 有权
标题翻译：具有多个控制电路的电子控制单元
公开(公告)号：US07978600B2
公开(公告)日：2011-07-12
申请号：US11713810
申请日：2007-03-05
申请人： Toru Itabashi , Mitsuhiro Kanayama , Michio Nakamura , Yoshiyuki Kawase , Atsushi Yamada
发明人： Toru Itabashi , Mitsuhiro Kanayama , Michio Nakamura , Yoshiyuki Kawase , Atsushi Yamada
IPC分类号： H04L29/04 , H04L12/40
CPC分类号： H04L12/4135 , H04L2012/40215 , H04L2012/40273
摘要： In an ECU, a level adjusting unit communicable to first and second control circuits and a bus transceiver installed in the ECU receives first data and second data respectively transmitted from the first and second control circuits. The bus transceiver is communicable to a communication bus. When the first data and the second data are simultaneously received, the level adjusting unit merges the first data and the second data such that a first electric level of the first data wins with a second electric level of the second data. The level adjusting unit outputs the merged data to the bus transceiver.
摘要翻译：在ECU中，可连接到第一和第二控制电路的电平调节单元以及安装在ECU中的总线收发器接收从第一和第二控制电路分别发送的第一数据和第二数据。总线收发器可通信到通信总线。当同时接收到第一数据和第二数据时，电平调整单元将第一数据和第二数据合并，使得第一数据的第一电平以第二数据的第二电平获胜。电平调整单元将合并的数据输出到总线收发器。

7. 发明申请

US20070208470A1 Electronic control unit with a plurality of control circuits 有权
标题翻译：具有多个控制电路的电子控制单元
公开(公告)号：US20070208470A1
公开(公告)日：2007-09-06
申请号：US11713810
申请日：2007-03-05
申请人： Toru Itabashi , Mitsuhiro Kanayama , Michio Nakamura , Yoshiyuki Kawase , Atsushi Yamada
发明人： Toru Itabashi , Mitsuhiro Kanayama , Michio Nakamura , Yoshiyuki Kawase , Atsushi Yamada
IPC分类号： G05D1/00 , G06F7/00
CPC分类号： H04L12/4135 , H04L2012/40215 , H04L2012/40273
摘要： In an ECU, a level adjusting unit communicable to first and second control circuits and a bus transceiver installed in the ECU receives first data and second data respectively transmitted from the first and second control circuits. The bus transceiver is communicable to a communication bus. When the first data and the second data are simultaneously received, the level adjusting unit merges the first data and the second data such that a first electric level of the first data wins with a second electric level of the second data. The level adjusting unit outputs the merged data to the bus transceiver.
摘要翻译：在ECU中，可以连接到第一和第二控制电路的电平调节单元以及安装在ECU中的总线收发器接收从第一和第二控制电路分别发送的第一数据和第二数据。总线收发器可通信到通信总线。当同时接收到第一数据和第二数据时，电平调整单元将第一数据和第二数据合并，使得第一数据的第一电平以第二数据的第二电平获胜。电平调整单元将合并的数据输出到总线收发器。

8. 发明授权

US5274301A Color cathode ray tube panel with shadow mask supports 失效
标题翻译：带荫罩支架的彩色阴极射线管面板
公开(公告)号：US5274301A
公开(公告)日：1993-12-28
申请号：US951038
申请日：1992-09-24
申请人： Tohru Takahashi , Michio Nakamura , Takeshi Fujiwara , Hidenari Toge , Hidetoshi Yamazaki
发明人： Tohru Takahashi , Michio Nakamura , Takeshi Fujiwara , Hidenari Toge , Hidetoshi Yamazaki
IPC分类号： H01J29/07
CPC分类号： H01J29/073
摘要： In a panel for a color cathode ray tube, a faceplate is so formed as to have a substantially rectangular front view and a skirt has four corner sections. Panel pin mount bases are provided on the four corner sections of the skirt, respectively and four panel pins are fixed to the mount base, respectively.
摘要翻译：在用于彩色阴极射线管的面板中，面板形成为具有大致矩形的前视图，裙部具有四个角部。面板销安装底座分别设置在裙部的四个角部上，四个面板销分别固定到安装座。

9. 发明授权

US4749975A Cathode ray tube deflection device having heat dissipation means 失效
标题翻译：具有散热装置的阴极射线管偏转装置
公开(公告)号：US4749975A
公开(公告)日：1988-06-07
申请号：US26215
申请日：1987-03-16
申请人： Kiyoshi Tokita , Kaneharu Kida , Michio Nakamura , Tooru Takahashi
发明人： Kiyoshi Tokita , Kaneharu Kida , Michio Nakamura , Tooru Takahashi
IPC分类号： H01J29/70 , H01J29/76 , H01F7/00
CPC分类号： H01J29/76
摘要： A deflection device generating magnetic field for electron beam deflection comprises, a cylindrical mold, a horizontal deflection coil provided inside the mold, a magnetic core attached to outside of the mold, a vertical deflection coil wound on the core, and magnetic member means for modifying deflection field distribution, interposed between the mold and vertical deflection coil.The deflection device further includes a porous ceramic layer for heat dissipation coated on at least a part of the outer surfaces of the mold, horizontal deflection coil, vertical deflection coil and magnetic member means.
摘要翻译：产生用于电子束偏转的磁场的偏转装置包括圆柱形模具，设置在模具内部的水平偏转线圈，附接到模具外部的磁芯，缠绕在芯上的垂直偏转线圈和用于修改的磁性构件装置偏转场分布，夹在模具和垂直偏转线圈之间。偏转装置还包括用于散热的多孔陶瓷层，其涂覆在模具的外表面的至少一部分，水平偏转线圈，垂直偏转线圈和磁性构件装置上。

10. 发明授权

US4727282A Color cathode-ray tube 失效
标题翻译：彩色阴极射线管
公开(公告)号：US4727282A
公开(公告)日：1988-02-23
申请号：US888214
申请日：1986-07-23
申请人： Kiyoshi Tokita , Michio Nakamura
发明人： Kiyoshi Tokita , Michio Nakamura
IPC分类号： H01J29/07
CPC分类号： H01J29/076
摘要： A color cathode-ray tube is disclosed, which has a shadow mask facing the face plate inner surface and having slit apertures formed in a predetermined arrangement. The center-to-center distance or interval Px of the slit apertures on the horizontal axis increases as a first function along the horizontal axis from the center of the shadow mask to the periphery region thereof. The center-to-center distance or interval Sx in peripheral regions of the shadow mask remotest from the horizontal axis increases as a second function different from the first function along the horizontal axis from the vertical axis to the periphery region thereof. The first and second functions representing the respective slit aperture intervals Px and Sx are given as ##EQU1## where X is 1, 2, 3, . . . , and .alpha. and .beta. are .alpha.
摘要翻译：公开了一种彩色阴极射线管，其具有面对面板内表面并具有以预定布置形成的狭缝孔的荫罩。水平轴上的狭缝孔的中心到中心的距离或间隔Px作为从荫罩的中心到其周边区域的水平轴线的第一功能增加。与水平轴线偏离的荫罩的周边区域的中心距离或间隔Sx作为与第一功能不同的第二功能，沿水平轴线从垂直轴向其周边区域增加。表示相应的狭缝孔径间隔Px和Sx的第一和第二功能被给定为，其中X是1,2,3。。。，α和β为α3和β6。

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