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1. 发明授权

US5510855A Satellite television broadcasting receiver including improved clamping circuit 失效
标题翻译：卫星电视广播接收机包括改进的钳位电路
公开(公告)号：US5510855A
公开(公告)日：1996-04-23
申请号：US424568
申请日：1995-04-17
申请人： Shigeru Kawakami , Noriaki Omoto , Toshihiro Shogaki
发明人： Shigeru Kawakami , Noriaki Omoto , Toshihiro Shogaki
IPC分类号： H04N5/60 , H04N7/045 , H04N7/20 , H04N5/18 , H04N5/44
CPC分类号： H04N5/60 , H04N7/045 , H04N7/20
摘要： The present invention relates to a satellite television broadcasting receiver which receives waves from a satellite, selects a broadcasting channel and obtains an FM demodulated video signal by passing a selected signal through the band-pass filter. In this satellite television broadcasting receiver, the video signal superposed with a large energy dispersion signal is inputted to the first clamping circuit at a low level, to eliminate the energy dispersion signal. Thus, a room is provided in the dynamic range of the amplifier at the later stage and the DG and DP of the amplifier at the later stage are maintained at a satisfactory level by the second clamping circuit. As a result, even in the case of a satellite television broadcasting in which the level of the energy dispersion signal superposed on the video signal is large, distortion which occurs due to the nonlinearity of the amplifier can be reduced substantially so that the image can be reproduced on the screen in a satisfactory condition without an interference of flickering.
摘要翻译：卫星电视广播接收机技术领域本发明涉及从卫星接收波的卫星电视广播接收机，通过通过带通滤波器的选择信号，选择广播频道并获得FM解调的视频信号。在该卫星电视广播接收机中，叠加有大能量色散信号的视频信号以低电平输入到第一钳位电路，以消除能量色散信号。因此，在后期的放大器的动态范围中设置一个房间，并且后期的放大器的DG和DP由第二钳位电路保持在令人满意的水平。结果，即使在其中叠加在视频信号上的能量色散信号的电平较大的卫星电视广播的情况下，也可以大幅度地减小由于放大器的非线性而发生的失真，从而图像可以在屏幕上以令人满意的状态再现而不受闪烁的干扰。

2. 发明授权

US4926137A Transistor amplifier for outputting a voltage which is higher than a breakdown voltage of the transistor 失效
标题翻译：用于输出高于晶体管的击穿电压的电压的晶体管放大器
公开(公告)号：US4926137A
公开(公告)日：1990-05-15
申请号：US388869
申请日：1989-08-03
申请人： Toshihiro Shogaki , Toyohiro Shibayama , Noriaki Omoto
发明人： Toshihiro Shogaki , Toyohiro Shibayama , Noriaki Omoto
IPC分类号： H03F3/343 , H03F3/45
CPC分类号： H03F3/343 , H03F3/45089 , H03F2200/516 , H03F2203/45352 , H03F2203/45371 , H03F2203/45702
摘要： A first and a second transistors coupled in series by connecting the collector of the first one to the emitter of the second one are connected at the collector of the second transistor through a resistor to a first power source of a voltage as high as about two times the breakdown voltage of these transistors, a third transistor is coupled at the collector to the base of the second transistor and a second power source of the lower voltage than the first power source through a load resistor, and the base of the third transistor is connected to the base of the first transistor; whereby an output voltage of the second transistor is divided into the respective collector-emitter voltages of the first and second transistors, and the output voltage exceeding the breakdown voltage of the transistor is obtainable.

3. 发明授权

US4959625A Wide bond balanced output frequency modulator using a video signal as a modulation signal 失效
标题翻译：宽键平衡输出频率调制器采用视频信号作为调制信号
公开(公告)号：US4959625A
公开(公告)日：1990-09-25
申请号：US375418
申请日：1989-07-05
申请人： Fusahiro Kameoka , Noriaki Omoto , Toshihiro Shogaki
发明人： Fusahiro Kameoka , Noriaki Omoto , Toshihiro Shogaki
IPC分类号： H03B1/00 , H03B5/12 , H03C3/16 , H03C3/22
CPC分类号： H03C3/222 , H03B5/1209 , H03B5/1231 , H03B5/1243 , H03B2200/004 , H03B2200/0098 , H03B2201/0208 , H03C3/16
摘要： A frequency modulator is provided, in which, for instance, a video signal is used as a modulation signal. A differential amplifier is formed by first and second transistors. First and second load resistors are connected between respective collectors of the first and second transistors and a power supply terminal (A). A series circuit of first and second feedback capacitors is inserted between the collector of the first transistor and a base of the second transistor. A series circuit of third and fourth feedback capacitors is inserted between the collector of the second transistor and a base of the first transistor. The respective same electrodes of first and second variable capacitance diodes are connected with each other and the other electrodes thereof are connected respectively to a junction point of the first and second feedback capacitors and to a junction point of the third and fourth feedback capacitors. First and second resonance coils are connected between the respective other electrodes of the first and second variable capacitance diodes and a reference potential point. A modulation signal is applied to the same electrode junction of the first and second variable capacitance diodes, and oscillation output signals of opposite phases are obtained from the respective collectors of the first and second transistors.

4. 发明授权

US07525387B2 Amplifier circuit 失效
标题翻译：放大器电路
公开(公告)号：US07525387B2
公开(公告)日：2009-04-28
申请号：US11808256
申请日：2007-06-07
申请人： Zaman Iqbal Kazi , Junji Ito , Toshihiro Shogaki
发明人： Zaman Iqbal Kazi , Junji Ito , Toshihiro Shogaki
IPC分类号： H03F3/04
CPC分类号： H03F1/302 , H03F1/26 , H03F3/191 , H03F2200/18 , H03F2200/294 , H03F2200/372 , H03F2200/391 , H03F2200/75
摘要： An amplifier circuit includes a first bipolar transistor of which the emitter is connected to the ground, and a bias circuit of the first bipolar transistor. The bias circuit includes a second bipolar transistor constituting a current mirror circuit along with the first bipolar transistor, a first resistor connected to the bases of the first bipolar transistor and the second bipolar transistor, and a third bipolar transistor of which the emitter is connected to the bases of the first bipolar transistor and the second bipolar transistor through the first resistor, and of which the base is connected to the collector of the second bipolar transistor. The first bipolar transistor amplifies a signal input to the base thereof and then outputs the amplified signal from the collector of the first bipolar transistor.
摘要翻译：放大器电路包括发射极连接到地的第一双极晶体管和第一双极晶体管的偏置电路。偏置电路包括与第一双极晶体管一起构成电流镜电路的第二双极晶体管，连接到第一双极晶体管和第二双极晶体管的基极的第一电阻器，以及发射极连接到第三双极晶体管的第三双极晶体管通过第一电阻器的第一双极晶体管和第二双极晶体管的基极，其基极连接到第二双极晶体管的集电极。第一双极晶体管放大输入到其基极的信号，然后从第一双极晶体管的集电极输出放大的信号。

5. 发明申请

US20080001675A1 Amplifier circuit 失效
标题翻译：放大器电路
公开(公告)号：US20080001675A1
公开(公告)日：2008-01-03
申请号：US11808256
申请日：2007-06-07
申请人： Zaman Kazi , Junji Ito , Toshihiro Shogaki
发明人： Zaman Kazi , Junji Ito , Toshihiro Shogaki
IPC分类号： H03F3/04
CPC分类号： H03F1/302 , H03F1/26 , H03F3/191 , H03F2200/18 , H03F2200/294 , H03F2200/372 , H03F2200/391 , H03F2200/75
摘要： An amplifier circuit includes a first bipolar transistor of which the emitter is connected to the ground, and a bias circuit of the first bipolar transistor. The bias circuit includes a second bipolar transistor constituting a current mirror circuit along with the first bipolar transistor, a first resistor connected to the bases of the first bipolar transistor and the second bipolar transistor, and a third bipolar transistor of which the emitter is connected to the bases of the first bipolar transistor and the second bipolar transistor through the first resistor, and of which the base is connected to the collector of the second bipolar transistor. The first bipolar transistor amplifies a signal input to the base thereof and then outputs the amplified signal from the collector of the first bipolar transistor.
摘要翻译：放大器电路包括发射极连接到地的第一双极晶体管和第一双极晶体管的偏置电路。偏置电路包括与第一双极晶体管一起构成电流镜电路的第二双极晶体管，连接到第一双极晶体管和第二双极晶体管的基极的第一电阻器，以及发射极连接到第三双极晶体管的第三双极晶体管通过第一电阻器的第一双极晶体管和第二双极晶体管的基极，其基极连接到第二双极晶体管的集电极。第一双极晶体管放大输入到其基极的信号，然后从第一双极晶体管的集电极输出放大的信号。

6. 发明申请

US20070120244A1 Semiconductor device having electrostatic breakdown protection element 审中-公开
标题翻译：具有静电击穿保护元件的半导体器件
公开(公告)号：US20070120244A1
公开(公告)日：2007-05-31
申请号：US10580814
申请日：2004-11-29
申请人： Iwao Kojima , Toshihiro Shogaki , Osamu Ishikawa
发明人： Iwao Kojima , Toshihiro Shogaki , Osamu Ishikawa
IPC分类号： H01L23/52
CPC分类号： H01L23/60 , H01L2224/16 , H01L2924/00011 , H01L2924/00014 , H01L2924/01004 , H01L2924/15192 , H01L2924/3011 , H01L2224/0401
摘要： A semiconductor device (1) comprises a semiconductor substrate (2) on which an integrated circuit (3, 4) is formed, a first ground terminal (7) and a second ground terminal (8) for electrically connecting the integrated circuit (3, 4) to an external ground electrode, and an electrostatic breakdown protection element (5) for electrically connecting the first ground terminal (7) with the second ground terminal (8). The first ground terminal (7) is electrically connected with the semiconductor substrate (2), while the second ground terminal (8) is not electrically connected with the semiconductor substrate (2). A semiconductor device comprises a semiconductor substrate on which an integrated circuit is formed, a first ground terminal and a second ground terminal for electrically connecting the integrated circuit to an external ground electrode, and an electrostatic breakdown protection element for electrically connecting the first ground terminal with the second ground terminal. The first ground terminal is electrically connected with the semiconductor substrate, while the second ground terminal is not electrically connected with the semiconductor substrate.
摘要翻译：半导体器件（1）包括其上形成有集成电路（3,4）的半导体衬底（2），用于将集成电路（3，4）电连接的第一接地端子（7）和第二接地端子（8） 4）连接到外部接地电极和用于将第一接地端子（7）与第二接地端子（8）电连接的静电击穿保护元件（5）。第一接地端子（7）与半导体衬底（2）电连接，而第二接地端子（8）不与半导体衬底（2）电连接。半导体器件包括其上形成有集成电路的半导体衬底，用于将集成电路电连接到外部接地电极的第一接地端子和第二接地端子，以及用于将第一接地端子与第二个接地终端。第一接地端子与半导体衬底电连接，而第二接地端子不与半导体衬底电连接。

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