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1. 发明授权

US07042758B2 Magnetic cell and magnetic memory 失效
标题翻译：磁性细胞和磁记忆
公开(公告)号：US07042758B2
公开(公告)日：2006-05-09
申请号：US10943835
申请日：2004-09-20
申请人： Shigeru Haneda , Shiho Nakamura , Yuuichi Oosawa
发明人： Shigeru Haneda , Shiho Nakamura , Yuuichi Oosawa
IPC分类号： G11C7/00
CPC分类号： G11C11/15
摘要： It is possible to provide a magnetic cell having a high developing rate of MR characteristics and a reduced fluctuation without causing element falling-down and a magnetic memory having the same. A magnetic cell includes: a lower electrode; an electrically conductive pillar formed on the lower electrode; a magnetoresistance effect film having at least two ferromagnetic layers formed on the electrically conductive pillar and an intermediate layer provided between the ferromagnetic layers; an upper electrode formed on the magnetoresistance effect film; a support layer formed from at least one metal directly on a side face of the electrically conductive pillar or via an insulating layer; and a current diffusion preventing layer provided between the support layer and the lower electrode, wherein a height of the electrically conductive pillar, a thickness of the current diffusion preventing layer, and a thickness of the support layer satisfy relationships of h > t1 + t2 > 30 30 + L × h where h represents the height of the electrically conductive pillar, t1 represents the thickness of the current diffusion preventing layer, t2 represents the thickness of the support layer, and L (nm) represents a length of a short side of the electrically conductive pillar.
摘要翻译：可以提供具有高的MR特性显影速率和降低的波动而不引起元件下落的磁性单元和具有该磁性单元的磁存储器。磁性电池包括：下电极; 形成在下电极上的导电柱; 具有形成在所述导电柱上的至少两个铁磁层和设置在所述铁磁层之间的中间层的磁阻效应膜; 形成在磁阻效应膜上的上电极; 由直接在导电柱的侧面上的至少一个金属或经由绝缘层形成的支撑层; 以及设置在支撑层和下部电极之间的电流扩散防止层，其中导电柱的高度，电流扩散防止层的厚度和支撑层的厚度满足 $h30MN>+Lxh其中h表示导电柱的高度，t 1表示电流扩散防止层的厚度，t 2表示支撑层的厚度，L（nm）表示导电柱的短边。$

2. 发明申请

US20050105325A1 Magnetic cell and magnetic memory 失效
公开(公告)号：US20050105325A1
公开(公告)日：2005-05-19
申请号：US10943835
申请日：2004-09-20
申请人： Shigeru Haneda , Shiho Nakamura , Yuuichi Oosawa
发明人： Shigeru Haneda , Shiho Nakamura , Yuuichi Oosawa
IPC分类号： H01L27/105 , G11C11/15 , H01L21/8246 , H01L43/08 , G11C11/00
CPC分类号： G11C11/15
摘要： It is possible to provide a magnetic cell having a high developing rate of MR characteristics and a reduced fluctuation without causing element falling-down and a magnetic memory having the same. A magnetic cell includes: a lower electrode; an electrically conductive pillar formed on the lower electrode; a magnetoresistance effect film having at least two ferromagnetic layers formed on the electrically conductive pillar and an intermediate layer provided between the ferromagnetic layers; an upper electrode formed on the magnetoresistance effect film; a support layer formed from at least one metal directly on a side face of the electrically conductive pillar or via an insulating layer; and a current diffusion preventing layer provided between the support layer and the lower electrode, wherein a height of the electrically conductive pillar, a thickness of the current diffusion preventing layer, and a thickness of the support layer satisfy relationships of h > t ⁢ ⁢ 1 + t ⁢ ⁢ 2 > 30 30 + L × h where h represents the height of the electrically conductive pillar, t1 represents the thickness of the current diffusion preventing layer, t2 represents the thickness of the support layer, and L (nm) represents a length of a short side of the electrically conductive pillar.

3. 发明授权

US07558103B2 Magnetic switching element and signal processing device using the same 失效
标题翻译：磁性开关元件及使用其的信号处理装置
公开(公告)号：US07558103B2
公开(公告)日：2009-07-07
申请号：US11729982
申请日：2007-03-30
申请人： Shiho Nakamura , Yuichi Motoi , Shigeru Haneda , Hirofumi Morise , Takahiro Hirai
发明人： Shiho Nakamura , Yuichi Motoi , Shigeru Haneda , Hirofumi Morise , Takahiro Hirai
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/71 , H01H1/0094 , Y10S977/725 , Y10S977/943
摘要： A magnetic switching element according to an example of the present invention includes a magnetic element, first and second electrodes which put the magnetic element therebetween, a current control section which is connected to the first and second electrodes, the current control section controlling a magnetization direction of a magnetization free section in such a manner that a current is made to flow between the magnetization free section and the magnetization fixed section, a movable conductive tube having a fixed end and a free end, and a third electrode connected to the fixed end of the conductive tube. A switching operation is performed in such a manner that a spatial position of the conductive tube is caused to change depending on the magnetization direction of the magnetization free section.
摘要翻译：根据本发明的实施例的磁性开关元件包括磁性元件，将磁性元件放置在其间的第一和第二电极，连接到第一和第二电极的电流控制部分，电流控制部分控制磁化方向的无磁化部分，使得电流在磁化自由部分和磁化固定部分之间流动，具有固定端和自由端的可移动导电管和连接到固定端的固定端的第三电极导电管。以使得导电管的空间位置根据磁化自由部的磁化方向而变化的方式进行切换操作。

4. 发明授权

US07486486B2 Magnetic device to reduce reversal current in current-driven magnetic reversal and magnetic memory using same 有权
标题翻译：磁性装置可减少电流驱动磁反转和磁存储器中的反转电流
公开(公告)号：US07486486B2
公开(公告)日：2009-02-03
申请号：US10954099
申请日：2004-09-30
申请人： Shiho Nakamura , Shigeru Haneda
发明人： Shiho Nakamura , Shigeru Haneda
IPC分类号： G11B5/127
CPC分类号： G11C11/15 , G11B5/1276
摘要： A magnetic device includes a first ferromagnetic layer in which magnetic layers and one or more nonmagnetic layers are alternately stacked, a second ferromagnetic layer having magnetization substantially fixed to a second direction, a third ferromagnetic layer provided between the first and second ferromagnetic layers and having a variable direction of magnetization, and a couple of electrodes configured to provide write current between the first and second ferromagnetic layers so that the direction of magnetization of the third ferromagnetic layer is determined depending on a direction of the current. At least one layer of the magnetic layers has magnetization substantially fixed to a first direction. Two or more layers of the magnetic layers are ferromagnetically coupled via the nonmagnetic layers. The ferromagnetic coupling has a strength such that a parallel magnetic alignment of the magnetic layers is maintained when the write current is passed.
摘要翻译：磁性装置包括第一铁磁层，其中磁性层和一个或多个非磁性层交替堆叠，具有基本上固定在第二方向上的磁化的第二铁磁层;设置在第一和第二铁磁层之间的第三铁磁层，可变磁化方向，以及配置成在第一和第二铁磁层之间提供写入电流的一对电极，使得第三铁磁层的磁化方向根据电流的方向来确定。至少一层磁性层具有大致固定在第一方向上的磁化。两层或多层磁性层通过非磁性层铁磁耦合。铁磁耦合具有这样的强度，使得当写入电流通过时，保持磁性层的平行磁性取向。

5. 发明授权

US07126849B2 Magnetic cell and magnetic memory 有权
标题翻译：磁性细胞和磁记忆
公开(公告)号：US07126849B2
公开(公告)日：2006-10-24
申请号：US11227493
申请日：2005-09-16
申请人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
发明人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , G11C11/5607 , H01L27/224 , H01L27/228
摘要： A magnetic cell includes: a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.
摘要翻译：磁性电池包括：第一铁磁层，其磁化基本上固定在第一方向上; 第二铁磁层，其磁化基本上固定在与第一方向相反的第二方向上; 设置在所述第一和第二铁磁层之间的第三铁磁层，所述第三铁磁层的磁化方向是可变的; 设置在第一和第三铁磁层之间的第一中间层; 以及设置在第二和第三铁磁层之间的第二中间层。可以通过在第一和第二铁磁层之间通过电流，在自旋极化电子对第三铁磁层的影响下确定第三铁磁层的磁化方向。

6. 发明申请

US20050219768A1 Magneto-resistance effect element 有权
标题翻译：磁阻效应元件
公开(公告)号：US20050219768A1
公开(公告)日：2005-10-06
申请号：US11090074
申请日：2005-03-28
申请人： Shiho Nakamura , Shigeru Haneda , Hirofumi Morise
发明人： Shiho Nakamura , Shigeru Haneda , Hirofumi Morise
IPC分类号： H01F10/30 , G11B5/127 , G11B5/33 , G11B5/39 , H01F10/32 , H01L43/08
CPC分类号： G11B5/39
摘要： A magneto-resistance effect element can obtain a high output and makes it possible to stabilize magnetization in a magnetization free layer therein even if a sense current is caused to flow. The magneto-resistance effect element is provided with a magnetization free layer whose magnetization direction is variable, a magnetization pinned layer whose magnetization direction is pinned, and an intermediate layer provided between the magnetization free layer and the magnetization pinned layer, where when no external magnetic field is present and no current flows, the magnetization direction in the magnetization free layer is anti-parallel to the magnetization direction pinned in the magnetization pinned layer, an easy axis of magnetization in the magnetization free layer is parallel to the magnetization direction pinned in the magnetization pinned layer, and a sense current flows from the magnetization free layer to the magnetization pinned layer.
摘要翻译：磁阻效应元件可以获得高输出，并且使得即使使感测电流流动，也可以使其在无磁化层中的磁化稳定。磁阻效应元件具有磁化方向可变的磁化自由层，其磁化方向被钉扎的磁化钉扎层以及设置在磁化自由层和磁化固定层之间的中间层，其中当没有外部磁磁场存在，没有电流流动，磁化自由层中的磁化方向与磁化被钉扎层中钉扎的磁化方向反平行，磁化自由层的易磁化轴平行于在磁化固定层，感测电流从磁化自由层流向磁化固定层。

7. 发明授权

US07598578B2 Magnetic element and signal processing device 失效
标题翻译：磁性元件和信号处理装置
公开(公告)号：US07598578B2
公开(公告)日：2009-10-06
申请号：US11390475
申请日：2006-03-28
申请人： Shiho Nakamura , Hirofumi Morise , Shigeru Haneda
发明人： Shiho Nakamura , Hirofumi Morise , Shigeru Haneda
IPC分类号： H01L41/00
CPC分类号： H01F10/3268 , B82Y25/00 , G11C11/16 , H01F10/3254 , H01F10/329 , H01L29/66984 , H01L43/08 , Y10S977/933
摘要： A magnetic element includes a channel layer, a first magnetic electrode which is in contact with the channel layer, a second magnetic electrode which is in contact with the channel layer and is insulated from the first magnetic electrode, a first intermediate layer which is provided adjacent to the first magnetic electrode and has a first insulating layer, a first magnetic layer which is provided in contact with a surface of the first intermediate layer on an opposite side to a surface contacting the first magnetic electrode to transfer magnetization to the first magnetic electrode, a first electrode which is connected to the first magnetic electrode, and a second electrode which is connected to the second magnetic electrode, at least one of the first electrode and the second electrode outputting a first signal which changes depending on a magnetic arrangement of the first magnetic electrode and the second magnetic electrode.
摘要翻译：磁性元件包括沟道层，与沟道层接触的第一磁电极，与沟道层接触并与第一磁极绝缘的第二磁极，邻近设置的第一中间层并且具有第一绝缘层，第一磁性层与第一中间层的与第一磁极接触的表面的相对侧与第一中间层的表面接触以将磁化转移到第一磁极，连接到第一磁极的第一电极和连接到第二磁极的第二电极，第一电极和第二电极中的至少一个输出根据第一电极的磁性排列而变化的第一信号磁极和第二磁极。

8. 发明授权

US07561385B2 Magneto-resistive element in which a free layer includes ferromagnetic layers and a non-magnetic layer interposed therebetween 有权
标题翻译：其中自由层包括铁磁层和插入其间的非磁性层的磁阻元件
公开(公告)号：US07561385B2
公开(公告)日：2009-07-14
申请号：US11087762
申请日：2005-03-24
申请人： Shiho Nakamura , Shigeru Haneda
发明人： Shiho Nakamura , Shigeru Haneda
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , G11B5/39
摘要： A magneto-resistive element comprising a free layer having two ferromagnetic layers having a nonmagnetic layer interposed therebetween are coupled with each other in an anti-ferromagnetic manner, a difference between an absolute value of a total of magnetizations of at least one ferromagnetic layer in which the magnetization direction is a first direction and an absolute value of a total of magnetizations of at least one ferromagnetic layer in which the magnetization direction is a second direction which is opposite to the first direction is equal to or smaller than 5×10−15 emu, and planes parallel to a substrate of the ferromagnetic layers are smaller as the planes are distant from the substrate.
摘要翻译：包括具有插入其间具有非磁性层的两个铁磁层的自由层的磁阻元件以反铁磁方式彼此耦合，其中至少一个铁磁层的总磁化的绝对值之间的差异在其中磁化方向是第一方向，并且其中磁化方向是与第一方向相反的第二方向的至少一个铁磁层的磁化总和的绝对值等于或小于5×10-15emu，并且平行于铁磁性层的基板的平面随着平面远离基板而变小。

9. 发明申请

US20060002185A1 Magnetic cell and magnetic memory 有权
公开(公告)号：US20060002185A1
公开(公告)日：2006-01-05
申请号：US11213865
申请日：2005-08-30
申请人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
发明人： Shiho Nakamura , Shigeru Haneda , Yuichi Ohsawa
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , G11C11/5607 , H01L27/224 , H01L27/228
摘要： A magnetic cell comprises: a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.

10. 发明授权

US06906949B1 Magnetic element and magnetic element array 失效
标题翻译：磁性元件和磁性元件阵列
公开(公告)号：US06906949B1
公开(公告)日：2005-06-14
申请号：US10401865
申请日：2003-03-31
申请人： Shiho Nakamura , Shigeru Haneda , Hiroaki Yoda
发明人： Shiho Nakamura , Shigeru Haneda , Hiroaki Yoda
IPC分类号： G11C11/14 , G11C11/15 , G11C11/16 , H01F10/32 , H01L27/22 , H01L43/08
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/15 , G11C11/16 , H01F10/3263 , H01F10/329 , H01L27/228
摘要： A magnetic element comprises a first magnetic reference part (A) including a first ferromagnetic substance pinned in magnetization (M1) substantially in a first direction, a second magnetic reference part (E) including a second ferromagnetic substance pinned in magnetization (M3) substantially in a second direction, and a magnetic recording part (C) provided between the first and second magnetic reference parts. The magnetic recording part includes a third ferromagnetic substance. A spin transfer intermediate part (B) is provided between the first magnetic reference part and the magnetic recording part. An intermediate part (D) is provided between the second magnetic reference part and the magnetic recording part. A magnetization (M2) of the third ferromagnetic substance can be directed in a direction parallel or anti-parallel to the first direction by passing a writing current between the first magnetic reference part and the magnetic recording part. A relative relation between the second direction and the direction of the magnetization of the third ferromagnetic substance can be detected by passing a sense current between the second magnetic reference part and the magnetic recording part.
摘要翻译：磁性元件包括：第一磁性参考部分（A），包括基本上沿第一方向被钉扎在磁化（M 1）中的第一铁磁物质;第二磁性参考部分（E），包括在磁化（M 3）中被钉扎的第二铁磁性物质，基本上在第二方向上的磁记录部分（C）和设置在第一和第二磁参考部分之间的磁记录部分（C）。磁记录部分包括第三铁磁物质。自旋转移中间部分（B）设置在第一磁参考部分和磁记录部分之间。中间部分（D）设置在第二磁参考部分和磁记录部分之间。第三铁磁性物质的磁化强度（M 2）可以通过使第一磁性参考部件和磁性记录部件之间的写入电流通过而在与第一方向平行或反平行的方向上被引导。可以通过在第二磁参考部分和磁记录部分之间通过感测电流来检测第二方向与第三铁磁物质的磁化方向之间的相对关系。

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